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1.发明授权公开(公告)号：US08451876B1
公开(公告)日：2013-05-28
申请号：US13108645
申请日：2011-05-16
IPC分类号： H01S5/00
CPC分类号： H01S5/0427 , B82Y20/00 , H01L33/0045 , H01L33/06 , H01S5/0425 , H01S5/0651 , H01S5/0652 , H01S5/2031 , H01S5/22 , H01S5/3202 , H01S5/34 , H01S5/3407 , H01S5/3414 , H01S5/34333 , H01S5/405 , H01S5/4087 , H01S2301/02
摘要： A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescene mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.
摘要翻译： 描述了提供具有广谱的激光二极管的系统和方法。 具有宽或多峰频谱输出操作的GaN基激光二极管通过具有产生多峰频谱输出的单个激光二极管器件，以超亮度模式操作或通过使用RF源和/或反馈来获得各种配置 信号。 在一些其他实施例中，通过使多个激光器件输出不同波长的不同激光器来实现多峰输出。
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公开(公告)号：US08048225B2
公开(公告)日：2011-11-01
申请号：US12556562
申请日：2009-09-09
IPC分类号： C30B21/04
CPC分类号： C30B29/403 , C30B23/025 , C30B25/18 , C30B29/406
摘要： The present invention includes a high-quality, large-area bulk GaN seed crystal for ammonothermal GaN growth and method for fabricating. The seed crystal is of ultra-low defect density, has flat surfaces free of bowing, and is free of foreign substrate material. The seed crystal is useful for producing large-volume, high-quality bulk GaN crystals by ammonothermal growth methods for eventual wafering into large-area GaN substrates for device fabrication.
摘要翻译： 本发明包括用于氨热GaN生长的高质量，大面积体积GaN晶种及其制造方法。 晶种具有超低缺陷密度，具有无弯曲的平坦表面，并且不含异物基材。 晶种可用于通过氨热生长方法生产大容量，高质量的体GaN晶体，用于最终晶片化成用于器件制造的大面积GaN衬底。
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3.发明申请Metalorganic chemical vapor deposittion (MOCVD) growth of high performance non-polar III-nitride optical devices 有权金属有机化学气相沉积（MOCVD）生长的高性能非极性III族氮化物光学器件公开(公告)号：US20080164489A1
公开(公告)日：2008-07-10
申请号：US12001286
申请日：2007-12-11
申请人： Mathew C. Schmidt , Kwang Choong Kim , Hitoshi Sato , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Mathew C. Schmidt , Kwang Choong Kim , Hitoshi Sato , Steven P. DenBaars , James S. Speck , Shuji Nakamura
CPC分类号： H01L33/0075 , B82Y20/00 , H01L21/0237 , H01L21/02389 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01S5/34333 , H01S2304/04
摘要： A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.
摘要翻译： 一种器件生长和p接触处理的方法，其产生非极性III族氮化物发光二极管和激光二极管的改善的性能。 使用低缺陷密度衬底或模板的关键组件，厚量子阱，低温p型III族氮化物生长技术和用于电极的透明导电氧化物。
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4.发明申请CRYSTAL GROWTH OF M-PLANE AND SEMIPOLAR PLANES OF (Al, In, Ga, B)N ON VARIOUS SUBSTRATES 审中-公开（Al，In，Ga，B）N在各种基材上的M-PLANE和SEM图像的晶体生长公开(公告)号：US20080163814A1
公开(公告)日：2008-07-10
申请号：US11954172
申请日：2007-12-11
申请人： Kwang Choong Kim , Mathew C. Schmidt , Feng Wu , Asako Hirai , Melvin B. McLaurin , Steven P. DenBaars , Shuji Nakamura , James S. Speck
发明人： Kwang Choong Kim , Mathew C. Schmidt , Feng Wu , Asako Hirai , Melvin B. McLaurin , Steven P. DenBaars , Shuji Nakamura , James S. Speck
IPC分类号： C30B23/04
CPC分类号： C30B25/04 , C30B29/403 , H01L21/02378 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/02636 , H01L21/02639 , H01L21/02647 , H01L21/0265 , H01L33/007
摘要： A method of reducing threading dislocation densities in non-polar such as a- {11-20} plane and m-{1-100} plane or semi-polar such as {10-1n} plane III-Nitrides by employing lateral epitaxial overgrowth from sidewalls of etched template material through a patterned mask. The method includes depositing a patterned mask on a template material such as a non-polar or semi polar GaN template, etching the template material down to various depths through openings in the mask, and growing non-polar or semi-polar III-Nitride by coalescing laterally from the tops of the sidewalls before the vertically growing material from the trench bottoms reaches the tops of the sidewalls. The coalesced features grow through the openings of the mask, and grow laterally over the dielectric mask until a fully coalesced continuous film is achieved.
摘要翻译： 通过使用横向外延过度生长，减少非极性（例如 - {11-20}面和m- {1-100}面或半极性，例如{10-1n}面III-氮化物）的穿透位错密度的方法 从蚀刻的模板材料的侧壁通过图案化掩模。 该方法包括在诸如非极性或半极性GaN模板的模板材料上沉积图案化掩模，通过掩模中的开口将模板材料蚀刻到各种深度，以及通过掩模中的开口生长非极性或半极性III-氮化物 在来自沟槽底部的垂直生长的材料到达侧壁的顶部之前，从侧壁的顶部侧向聚结。 聚结的特征通过掩模的开口生长，并且在电介质掩模上横向生长，直到实现完全聚结的连续膜。
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5.发明授权Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices 有权金属有机化学气相沉积（MOCVD）生长的高性能非极性III族氮化物光学器件公开(公告)号：US08178373B2
公开(公告)日：2012-05-15
申请号：US12914906
申请日：2010-10-28
申请人： Mathew C. Schmidt , Kwang Choong Kim , Hitsohi Sato , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Mathew C. Schmidt , Kwang Choong Kim , Hitsohi Sato , Steven P. DenBaars , James S. Speck , Shuji Nakamura
CPC分类号： H01L33/0075 , B82Y20/00 , H01L21/0237 , H01L21/02389 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01S5/34333 , H01S2304/04
摘要： A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.
摘要翻译： 一种器件生长和p接触处理的方法，其产生非极性III族氮化物发光二极管和激光二极管的改善的性能。 使用低缺陷密度衬底或模板的关键组件，厚量子阱，低温p型III族氮化物生长技术和用于电极的透明导电氧化物。
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6.发明申请公开(公告)号：US20120104359A1
公开(公告)日：2012-05-03
申请号：US13291922
申请日：2011-11-08
申请人： Andrew Felker , Nicholas A. Vickers , Rafael Aldaz , David Press , Nicholas J. Pfister , James W. Raring , Mathew C. Schmidt , Kenneth John Thomson
发明人： Andrew Felker , Nicholas A. Vickers , Rafael Aldaz , David Press , Nicholas J. Pfister , James W. Raring , Mathew C. Schmidt , Kenneth John Thomson
CPC分类号： H01L33/20 , B82Y20/00 , H01L33/0095 , H01L2924/0002 , H01S5/0202 , H01S5/0217 , H01S5/028 , H01S5/0425 , H01S5/2201 , H01S5/3202 , H01S5/34333 , H01S2304/04 , H01L2924/00
摘要： A method for forming optical devices includes providing a gallium nitride substrate having a crystalline surface region and a backside region. The backside is subjected to a laser scribing process to form scribe regions. Metal contacts overly the scribe regions.
摘要翻译： 一种形成光学器件的方法包括提供具有结晶表面区域和背面区域的氮化镓衬底。 将背面进行激光划线处理以形成划线区域。 金属接触过度的划痕区域。
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7.发明申请METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) GROWTH OF HIGH PERFORMANCE NON-POLAR III-NITRIDE OPTICAL DEVICES 有权金属化学气相沉积（MOCVD）高性能非极性III-NITRIDE光学器件的生长公开(公告)号：US20110037052A1
公开(公告)日：2011-02-17
申请号：US12914906
申请日：2010-10-28
申请人： Mathew C. Schmidt , Kwang Choong Kim , Hitsohi Sato , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Mathew C. Schmidt , Kwang Choong Kim , Hitsohi Sato , Steven P. DenBaars , James S. Speck , Shuji Nakamura
CPC分类号： H01L33/0075 , B82Y20/00 , H01L21/0237 , H01L21/02389 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01S5/34333 , H01S2304/04
摘要： A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.
摘要翻译： 一种器件生长和p接触处理的方法，其产生非极性III族氮化物发光二极管和激光二极管的改善的性能。 使用低缺陷密度衬底或模板的关键组件，厚量子阱，低温p型III族氮化物生长技术和用于电极的透明导电氧化物。
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公开(公告)号：US09130119B2
公开(公告)日：2015-09-08
申请号：US12001227
申请日：2007-12-11
IPC分类号： H01L33/00 , H01L33/32 , B82Y20/00 , H01L33/06 , H01L33/16 , H01L33/22 , H01S5/22 , H01S5/223 , H01S5/34 , H01S5/343
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01L33/16 , H01L33/22 , H01S5/2201 , H01S5/2231 , H01S5/3404 , H01S5/34333
摘要： An (Al, Ga, In)N light emitting device, such as a light emitting diode (LED), in which high light generation efficiency is realized by fabricating the device on non-polar or semi-polar III-Nitride crystal geometries. Because non-polar and semi-polar emitting devices have significantly lower piezoelectric effects than c-plane emitting devices, higher efficiency emitting devices at higher current densities can be realized.
摘要翻译： 一种（Al，Ga，In）N发光器件，例如发光二极管（LED），其中通过以非极性或半极性III氮化物晶体几何形状制造器件来实现高发光效率。 因为非极性和半极性发射器件具有比c面发射器件显着更低的压电效应，所以可以实现在更高电流密度下的更高效率的发射器件。
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9.发明授权Method of fabricating optical devices using laser treatment of contact regions of gallium and nitrogen containing material 有权使用激光处理含镓和氮的材料的接触区域制造光学器件的方法公开(公告)号：US08975615B2
公开(公告)日：2015-03-10
申请号：US13291922
申请日：2011-11-08
申请人： Andrew Felker , Nicholas A. Vickers , Rafael Aldaz , David Press , Nicholas J. Pfister , James W. Raring , Mathew C. Schmidt , Kenneth John Thomson
发明人： Andrew Felker , Nicholas A. Vickers , Rafael Aldaz , David Press , Nicholas J. Pfister , James W. Raring , Mathew C. Schmidt , Kenneth John Thomson
IPC分类号： H01L33/06 , H01L33/20 , B82Y20/00 , H01S5/042 , H01S5/22 , H01S5/32 , H01L33/00 , H01S5/02 , H01S5/028 , H01S5/343
CPC分类号： H01L33/20 , B82Y20/00 , H01L33/0095 , H01L2924/0002 , H01S5/0202 , H01S5/0217 , H01S5/028 , H01S5/0425 , H01S5/2201 , H01S5/3202 , H01S5/34333 , H01S2304/04 , H01L2924/00
摘要： A method for forming optical devices includes providing a gallium nitride substrate having a crystalline surface region and a backside region. The backside is subjected to a laser scribing process to form scribe regions. Metal contacts overly the scribe regions.
摘要翻译： 一种形成光学器件的方法包括提供具有结晶表面区域和背面区域的氮化镓衬底。 将背面进行激光划线处理以形成划线区域。 金属接触过度的划痕区域。
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10.发明授权Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices 有权金属有机化学气相沉积（MOCVD）生长的高性能非极性III族氮化物光学器件公开(公告)号：US08956896B2
公开(公告)日：2015-02-17
申请号：US13440087
申请日：2012-04-05
申请人： Mathew C. Schmidt , Kwang Choong Kim , Hitoshi Sato , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Mathew C. Schmidt , Kwang Choong Kim , Hitoshi Sato , Steven P. DenBaars , James S. Speck , Shuji Nakamura
CPC分类号： H01L33/0075 , B82Y20/00 , H01L21/0237 , H01L21/02389 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01S5/34333 , H01S2304/04
摘要： A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.
摘要翻译： 一种器件生长和p接触处理的方法，其产生非极性III族氮化物发光二极管和激光二极管的改善的性能。 使用低缺陷密度衬底或模板的关键组件，厚量子阱，低温p型III族氮化物生长技术和用于电极的透明导电氧化物。
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