Invention Grant
US08178373B2 Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices
有权
金属有机化学气相沉积（MOCVD）生长的高性能非极性III族氮化物光学器件
- Patent Title: Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices
- Patent Title (中): 金属有机化学气相沉积（MOCVD）生长的高性能非极性III族氮化物光学器件
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Application No.: US12914906Application Date: 2010-10-28
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Publication No.: US08178373B2Publication Date: 2012-05-15
- Inventor: Mathew C. Schmidt , Kwang Choong Kim , Hitsohi Sato , Steven P. DenBaars , James S. Speck , Shuji Nakamura
- Applicant: Mathew C. Schmidt , Kwang Choong Kim , Hitsohi Sato , Steven P. DenBaars , James S. Speck , Shuji Nakamura
- Applicant Address: US CA Oakland JP Saitama Prefecture
- Assignee: The Regents of the University of California,Japan Science and Technology Agency
- Current Assignee: The Regents of the University of California,Japan Science and Technology Agency
- Current Assignee Address: US CA Oakland JP Saitama Prefecture
- Agency: Gates & Cooper LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L33/00
Abstract:
A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.
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