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    Monolithic antenna
    2.
    发明授权
    Monolithic antenna 失效
    单片天线

    公开(公告)号：US6061026A

    公开(公告)日：2000-05-09

    申请号：US21172

    申请日：1998-02-10

    申请人： Masanori Ochi ,  Souichi Imamura ,  Shigehiro Hosoi ,  Yutaka Ueno

    发明人： Masanori Ochi ,  Souichi Imamura ,  Shigehiro Hosoi ,  Yutaka Ueno

    IPC分类号： H01P11/00 ,  H01Q9/16 ,  H01Q9/28 ,  H01Q13/02 ,  H01Q13/08 ,  H01Q21/00 ,  H01Q21/06 ,  H01Q23/00 ,  H01Q1/38

    CPC分类号： H01Q23/00 ,  H01Q21/0093 ,  H01Q21/064 ,  H01Q9/285

    摘要： A high-gain monolithic antenna with high freedom of design has a signal circuit and a stripline dipole antenna which are provided on a substrate. A dielectric film and a conductor cover covering the dielectric film are provided on the upper surface of the substrate, in addition to a hole extending vertically downward to the underside of the substrate, a conductor wall being provided on the surface thereof. Furthermore, a metallic film is evaporated so as to contact both a metallic cover and a conductor wall. A first grounding conductor and a dielectric are provided on the lower surface of the substrate, and a second grounding conductor is provided on the upper surface of the substrate. A horn, which is tapered into the dielectric and the first grounding conductor thereby forming the shape of a quadrangular pyramid, is provided so as to overlap a hole etched into the substrate. Microwaves or milliwaves are radiated to/from the horn to/from the underside of the substrate.

    摘要翻译： 具有高自由度的高增益单片天线具有设置在基板上的信号电路和带状线偶极子天线。 除了垂直向下延伸到基板的下侧的孔之外，还在基板的上表面上设置覆盖电介质膜的绝缘膜和导体盖，在其表面上设置有导体壁。 此外，金属膜被蒸发以与金属盖和导体壁接触。 第一接地导体和电介质设置在基板的下表面上，第二接地导体设置在基板的上表面上。 提供了锥形到电介质中的喇叭和第一接地导体，从而形成四角锥形的形状，以便与蚀刻到衬底中的孔重叠。 微波或毫瓦辐射到/从喇叭到基底的下面。

    Method of manufacturing a compound semiconductor device having gate electrode self-aligned to source and drain electrodes
    6.
    发明授权
    Method of manufacturing a compound semiconductor device having gate electrode self-aligned to source and drain electrodes 失效
    具有栅电极与源电极和漏电极自对准的化合物半导体器件的制造方法

    公开(公告)号：US5409849A

    公开(公告)日：1995-04-25

    申请号：US58684

    申请日：1993-05-07

    申请人： Yoshihiro Kishita ,  Masanori Ochi ,  Souichi Imamura ,  Toshikazu Fukuda

    发明人： Yoshihiro Kishita ,  Masanori Ochi ,  Souichi Imamura ,  Toshikazu Fukuda

    IPC分类号： H01L29/812 ,  H01L21/285 ,  H01L21/335 ,  H01L21/338 ,  H01L29/417 ,  H01L29/423 ,  H01L29/778 ,  H01L21/265

    CPC分类号： H01L29/66863 ,  H01L21/28587 ,  H01L29/42316 ,  H01L29/66462

    摘要： According to this invention, there is provided a method of manufacturing a compound semiconductor which can be formed at a high yield and in which variations in characteristics of elements caused by variations in distances between a source and a gate and between a drain and the gate can be minimized. In addition, there is provided a compound semiconductor device having a structure capable of increasing a power gain and obtaining a high-speed operation. According to this invention, an active layer is formed on a compound semi-conductor substrate, and source/drain electrodes are formed on the active layer to be separated from each other. The wall insulating films are respectively formed on side walls of the electrodes, and a gate electrode is formed between the side wall insulating films to be respectively in contact therewith.

    摘要翻译： 根据本发明，提供一种制造化合物半导体的方法，该化合物半导体可以以高产率形成，并且由源极和栅极之间以及漏极和栅极之间的距离变化引起的元件的特性的变化可以 最小化 此外，提供了具有能够增加功率增益并获得高速操作的结构的化合物半导体器件。 根据本发明，在复合半导体基板上形成有源层，在有源层上形成源极/漏极，以分离。 壁绝缘膜分别形成在电极的侧壁上，并且在侧壁绝缘膜之间形成分别与其接触的栅电极。