摘要:
A plurality of film substrates (2) having a bare chip (1) mounted on one side or both sides are joined into a laminated state by joint portions (3) and are attached to a motherboard (4) through junction by a joint portion (8) at a location off the mounting areas of the bare chips (1), thereby achieving a lower profile, higher lamination, and higher capacity.
摘要:
An electronic component and a circuit formation article are bonded together with a bonding material containing resin interposed therebetween. In a state that bumps of an electronic-component bonding region and electrodes of the circuit formation article are in mutual electrical contact, the electronic component and the circuit formation article are thermocompression-bonded to each other upon curing of the bonding material. A bonding-material flow regulating member of the electronic-component bonding region regulates flow of the bonding material toward a peripheral portion of the electronic-component bonding region during bonding of the circuit formation article to the electronic component.
摘要:
A semiconductor chip (1) is flip-chip mounted on a circuit board (4) with an underfill resin (6) interposed between the semiconductor chip (1) and the circuit board (4) and a container covering the semiconductor chip (1) is bonded on the circuit board (4). At this point, the semiconductor chip (1) positioned with the underfill resin (6) interposed between the circuit board (4) and the semiconductor chip (1) is pressed and heated by a pressure-bonding tool (8); meanwhile, the surface of the underfill resin (6) protruding around the semiconductor chip (1) is pressed by the pressure-bonding tool (8) through a film (13) on which a surface unevenness is formed in a periodically repeating pattern, so that a surface unevenness (16a) is formed. The inner surface of the container covering the semiconductor chip (1) is bonded to the surface unevenness (16a) on the surface of the underfill resin.
摘要:
A plurality of film substrates (2) having a bare chip (1) mounted on one side or both sides are joined into a laminated state by joint portions (3) and are attached to a motherboard (4) through junction by a joint portion (8) at a location off the mounting areas of the bare chips (1), thereby achieving a lower profile, higher lamination, and higher capacity.
摘要:
This semiconductor device is a semiconductor device in which a semiconductor element is flip-chip mounted onto a circuit substrate and the semiconductor element is covered and sealed with a sealing resin. A recess portion is formed in the sealing resin on a surface opposite to the mounting surface of the semiconductor element. Warping of the semiconductor device is reduced by the action of this recess portion.
摘要:
A semiconductor element mounting method is provided with high productivity. The method includes forming bumps on electrodes of a wafer in which a plurality of semiconductor elements have been formed, temporarily compression-bonding the wafer and an interposer via an insulative resin, curing the resin by performing heating and pressurization so that the wafer and the interposer are finally compression-bonded, wherein the electrodes of the wafer and electrodes of the interposer are bonded to each other, respectively, and wherein insulative resin overflowing from between the wafer and the interposer flows into grooves disposed so as to be coincident with dicing lines of the wafer, thus providing a uniform flow of the insulative resin, and thereafter, cutting and separating this bonded unit into individual semiconductor elements.
摘要:
This semiconductor device is a semiconductor device in which a semiconductor element is flip-chip mounted onto a circuit substrate and the semiconductor element is covered and sealed with a sealing resin. A recess portion is formed in the sealing resin on a surface opposite to the mounting surface of the semiconductor element. Warping of the semiconductor device is reduced by the action of this recess portion.
摘要:
A semiconductor chip (1) is flip-chip mounted on a circuit board (4) with an underfill resin (6) interposed between the semiconductor chip (1) and the circuit board (4) and a container covering the semiconductor chip (1) is bonded on the circuit board (4). At this point, the semiconductor chip (1) positioned with the underfill resin (6) interposed between the circuit board (4) and the semiconductor chip (1) is pressed and heated by a pressure-bonding tool (8); meanwhile, the surface of the underfill resin (6) protruding around the semiconductor chip (1) is pressed by the pressure-bonding tool (8) through a film (13) on which a surface unevenness is formed in a periodically repeating pattern, so that a surface unevenness (16a) is formed. The inner surface of the container covering the semiconductor chip (1) is bonded to the surface unevenness (16a) on the surface of the underfill resin.
摘要:
The purpose of the present invention is to provide high manganese cast iron containing spheroidal vanadium carbide and method for making which is nonmagnetic as well as superior mechanical properties such as wear-resistance and toughness, and further does not require a water toughing heat treatment which has been needed when nonmagnetic high manganese steel (high manganese cast steel) is obtained by crystallized spheroidal vanadium in austenite matrix, and the high manganese cast iron containing spheroidal vanadium carbide is comprised of C 1.5˜4.0 weight %, V 6˜15 weight %, Si 0.2˜4.0 weight %, Mn 10˜18 weight %, Mg 0.01˜0.1 weight %, remaining iron (Fe) and inevitable impurities, spheroidal vanadium carbide is crystallized within a structure.
摘要翻译:本发明的目的是提供含有球墨铸铁的高锰铸铁及其非磁性制造方法以及耐磨性和韧性等优异的机械性能,而且不需要水韧性热处理, 在奥氏体基体中通过结晶的球状钒获得非磁性高锰钢(高锰铸钢)时需要,并且含有球铁钒的高锰铸铁为C 1.5〜4.0重量%,V 6〜15重量% Si 0.2〜4.0重量%,Mn 10〜18重量%,Mg 0.01〜0.1重量%,剩余铁(Fe)和不可避免的杂质,球状碳化钒在结构内结晶。