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    SUBSTRATE CLEANING APPARATUS AND METHOD AND BRUSH ASSEMBLY USED THEREIN
    2.
    发明申请
    SUBSTRATE CLEANING APPARATUS AND METHOD AND BRUSH ASSEMBLY USED THEREIN 有权
    基板清洁装置及其使用的方法和刷子组件

    公开(公告)号：US20140366913A1

    公开(公告)日：2014-12-18

    申请号：US14301669

    申请日：2014-06-11

    Applicant: K.C. TECH CO., LTD.

    Inventor： Moon Gi CHO ,  Jun Ho SON

    IPC: B08B1/00 ,  B08B1/04

    CPC classification number: H01L21/67046 ,  A46B13/001 ,  B08B1/04

    Abstract: Provided are a substrate cleaning apparatus and method and a brush assembly used therein. The substrate cleaning apparatus for contact-cleaning a substrate includes a cleaning brush rotatably disposed in a cylindrical shape and having an outer circumferential surface contacting the substrate to clean the substrate. Here, the cleaning brush includes a plurality of pressure chambers expanding by a fluid pressure and disposed along a longitudinal direction of a rotation axis rotating at a central portion of the cleaning brush, and the plurality of pressure chambers are individually expandable to allow a portion of the outer circumferential surface to protrude in a radial direction and thus contact-clean a portion of the substrate.

    Abstract translation: 提供了其中使用的基板清洁装置和方法以及刷组件。 用于接触清​​洁基板的基板清洁装置包括可旋转地设置成圆柱形状并具有与基板接触的外周表面以清洁基板的清洁刷。 这里，清洁刷包括多个压力室，其通过流体压力膨胀并且沿着在清洁刷的中心部分处旋转的旋转轴线的纵向方向设置，并且多个压力室单独地可膨胀以允许 所述外圆周表面沿径向突出，从而接触所述基底的一部分。

    Substrate cleaning apparatus and method and brush assembly used therein
    4.
    发明授权
    Substrate cleaning apparatus and method and brush assembly used therein 有权

    公开(公告)号：US09704729B2

    公开(公告)日：2017-07-11

    申请号：US14301669

    申请日：2014-06-11

    Applicant: K.C. TECH CO., LTD.

    Inventor： Moon Gi Cho ,  Jun Ho Son

    IPC: H01L21/67 ,  A46B13/00 ,  B08B1/04

    CPC classification number: H01L21/67046 ,  A46B13/001 ,  B08B1/04

    Abstract: Provided are a substrate cleaning apparatus and method and a brush assembly used therein. The substrate cleaning apparatus for contact-cleaning a substrate includes a cleaning brush rotatably disposed in a cylindrical shape and having an outer circumferential surface contacting the substrate to clean the substrate. Here, the cleaning brush includes a plurality of pressure chambers expanding by a fluid pressure and disposed along a longitudinal direction of a rotation axis rotating at a central portion of the cleaning brush, and the plurality of pressure chambers are individually expandable to allow a portion of the outer circumferential surface to protrude in a radial direction and thus contact-clean a portion of the substrate.

    THIN FILM MANUFACTURING METHOD AND ATOMIC LAYER DEPOSITION APPARATUS
    6.
    发明申请
    THIN FILM MANUFACTURING METHOD AND ATOMIC LAYER DEPOSITION APPARATUS 审中-公开
    薄膜制造方法和原子层沉积装置

    公开(公告)号：US20160108518A1

    公开(公告)日：2016-04-21

    申请号：US14834230

    申请日：2015-08-24

    Applicant: K.C. Tech Co., Ltd.

    Inventor： Sung Hyun PARK ,  In Chul SHIN ,  Keun Woo LEE ,  Kyung Joon KIM

    IPC: C23C16/34 ,  C23C16/44 ,  H01L21/02 ,  C23C16/455

    CPC classification number: C23C16/345 ,  C23C16/45536 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228

    Abstract: A method of manufacturing a silicon nitride (Si3N4) film at low temperature using an atomic layer deposition (ALD), and an ALD apparatus for the same are disclosed. The method of manufacturing a Si3N4 film uses a silicon precursor material including silicon as a source gas, an N2 gas activated by plasma as a reaction gas, and an N2 gas as a purge gas, and manufactures a Si3N4 film by providing gases in an order of the source gas, the purge gas, the reaction gas, and the purge gas.

    Abstract translation: 公开了使用原子层沉积（ALD）在低温下制造氮化硅（Si 3 N 4）膜的方法和用于其的ALD装置。 制造Si 3 N 4膜的方法使用包括硅作为原料气体的硅前体材料，由等离子体激活的N 2气体作为反应气体，并且使用N 2气体作为吹扫气体，并通过以顺序提供气体制造Si 3 N 4膜 的源气体，吹扫气体，反应气体和净化气体。

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