公开(公告)号：US20160108518A1

公开(公告)日：2016-04-21

申请号：US14834230

申请日：2015-08-24

Applicant: K.C. Tech Co., Ltd.

Inventor： Sung Hyun PARK ,  In Chul SHIN ,  Keun Woo LEE ,  Kyung Joon KIM

IPC: C23C16/34 ,  C23C16/44 ,  H01L21/02 ,  C23C16/455

CPC classification number: C23C16/345 ,  C23C16/45536 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228

Abstract: A method of manufacturing a silicon nitride (Si3N4) film at low temperature using an atomic layer deposition (ALD), and an ALD apparatus for the same are disclosed. The method of manufacturing a Si3N4 film uses a silicon precursor material including silicon as a source gas, an N2 gas activated by plasma as a reaction gas, and an N2 gas as a purge gas, and manufactures a Si3N4 film by providing gases in an order of the source gas, the purge gas, the reaction gas, and the purge gas.

Abstract translation: 公开了使用原子层沉积（ALD）在低温下制造氮化硅（Si 3 N 4）膜的方法和用于其的ALD装置。 制造Si 3 N 4膜的方法使用包括硅作为原料气体的硅前体材料，由等离子体激活的N 2气体作为反应气体，并且使用N 2气体作为吹扫气体，并通过以顺序提供气体制造Si 3 N 4膜 的源气体，吹扫气体，反应气体和净化气体。