公开(公告)号：US10077381B2

公开(公告)日：2018-09-18

申请号：US15205684

申请日：2016-07-08

Applicant: K.C. Tech Co., Ltd.

Inventor： Dong Kyu Choi ,  Young Ho Yoon ,  Hyun Goo Kong ,  Jin Sook Hwang ,  Han Teo Park

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C09G1/02 ,  C23F3/06

CPC classification number: C09G1/02 ,  C23F3/06

Abstract: A polishing slurry composition is provided. The polishing slurry composition includes at least two types of abrasive particles among first abrasive particles, second abrasive particles, and third abrasive particles, and an oxidizer. A peak-to-valley roughness Rpv decreases when a contact area between the abrasive particles and a tungsten-containing film increases.