公开(公告)号：US4436602A

公开(公告)日：1984-03-13

申请号：US524708

申请日：1983-08-19

Applicant: David J. Harra ,  Frederick T. Turner ,  Martin A. Hutchinson

Inventor： David J. Harra ,  Frederick T. Turner ,  Martin A. Hutchinson

IPC: C23C14/04 ,  H01J37/34 ,  C23C15/00

CPC classification number: H01J37/34 ,  C23C14/044

Abstract: A method of sputter depositing a desired film thickness profile on a substrate is accomplished by depositing material onto a substrate at spaced apart coating stations whereby a substrate at any of said stations is not coated by the sputter coating action at any of the other sputter stations. The substrate is held stationary during complete sputtering at each station. A blocking shield is placed in fixed position between the substrate and the sputter coating source at one or more of the stations. The duration of sputter coating time at one station may be different than at another station.

Abstract translation: 在衬底上溅射沉积期望的膜厚度轮廓的方法是通过在间隔的涂覆工位上将材料沉积到衬底上来实现的，由此任何所述工位的衬底在任何其它溅射站处的溅射涂覆作用没有被涂覆。 在每个站的完全溅射期间，基板保持静止。 在一个或多个站处将阻挡屏蔽物放置在基板和溅射涂覆源之间的固定位置。 在一个站的溅射涂覆时间的持续时间可能不同于另一个站。

公开(公告)号：US4416760A

公开(公告)日：1983-11-22

申请号：US325589

申请日：1981-11-27

Applicant: Frederick T. Turner

Inventor： Frederick T. Turner

IPC: C23C14/34 ,  C23C14/04 ,  H01J37/34 ,  H01L21/203 ,  H01L21/285 ,  H01L21/31 ,  C23C15/00

CPC classification number: C23C14/044 ,  H01J37/34

Abstract: Apparatus for compensating for asymmetric signatures in semiconductor processes. An asymmetric thickness profile is obtained in a sputter coating system by using a shield placed in an asymmetric position with respect to the center of a symmetric sputtering system such as a circularly symmetric sputtering system. A sputter coated layer is obtained which has the asymmetric character of the shield and its placement. When the substrate is placed in subsequent equipment having asymmetric etch characteristics, the resultant film has a uniform thickness or a known contour.

Abstract translation: 用于补偿半导体工艺中的非对称特征的装置。 通过使用相对于诸如圆形对称溅射系统的对称溅射系统的中心位于不对称位置的屏蔽，在溅射涂覆系统中获得不对称厚度分布。 获得了具有防护层的不对称特性及其放置的溅射涂层。 当将衬底放置在具有不对称蚀刻特性的后续设备中时，所得到的膜具有均匀的厚度或已知的轮廓。

公开(公告)号：US4416759A

公开(公告)日：1983-11-22

申请号：US325588

申请日：1981-11-27

Applicant: David J. Harra ,  Frederick T. Turner ,  Martin A. Hutchinson

Inventor： David J. Harra ,  Frederick T. Turner ,  Martin A. Hutchinson

IPC: C23C14/34 ,  C23C14/04 ,  H01J37/34 ,  C23C15/00

CPC classification number: H01J37/34 ,  C23C14/044

Abstract: The arbitrary contouring of thickness of a sputter-deposited film is made possible by a blocking means having a primary blocking shield and an ancillary blocking shield. The primary blocking shield intercepts atoms sputtered directly from the cathode target by line-of-sight transport. The ancillary blocking shield extends downwardly from the side of the primary blocking shield which is placed closest to the substrate. The ancillary blocking shield intercepts atoms sputtered from the cathode which by intervening gas collisions have been redirected to travel underneath the primary blocking shield. Precise tailoring of the thickness profile of the coating on the substrate is thereby provided and the quality of the composite film is maintained. The method for contouring the thickness of sputter coated layers comprises sputter coating portions of the film at successive stations. By employing the improved blocking shield at selected stations, the film in the aggregate may have the desired thickness contour.

Abstract translation: 通过具有主阻挡屏蔽和辅助阻挡屏蔽的阻挡装置使溅射沉积膜的厚度的任意轮廓化成为可能。 主阻挡屏蔽通过视线传输直接从阴极靶溅射的原子。 辅助阻挡屏蔽从最靠近基板放置的主阻挡屏蔽的侧面向下延伸。 辅助阻挡屏蔽物拦截从阴极溅射的原子，通过介入气体碰撞已被重定向到主阻挡屏蔽下方。 由此提供了基板上涂层厚度分布的精确裁剪，并且保持了复合膜的质量。 用于轮廓化溅射涂覆层的厚度的方法包括在连续的站处溅射涂覆膜的部分。 通过在所选择的站点采用改进的阻挡屏蔽，聚集体中的膜可以具有期望的厚度轮廓。

公开(公告)号：US4166783A

公开(公告)日：1979-09-04

申请号：US897235

申请日：1978-04-17

Applicant: Frederick T. Turner

Inventor： Frederick T. Turner

IPC: C23C14/34 ,  C23C14/54 ,  H01J37/34 ,  H01L21/203 ,  H01L21/205 ,  H01L21/31 ,  C23C15/00

CPC classification number: H01J37/34 ,  C23C14/3407 ,  H01J37/3444 ,  H01J37/3479

Abstract: A sputtering system utilizes a computer to monitor the power dissipation in the sputtering source and to accumulate the history of usage of the particular sputtering target. Desired deposition rate information is input to the computer, which establishes and maintains the desired rate and controls the plasma discharge to compensate for aging and deterioration of the target. End of useful target life is determined by the computer from objective criteria to trigger appropriate actions.

Abstract translation: 溅射系统利用计算机来监测溅射源中的功率消耗并累积特定溅射靶的使用历史。 期望的沉积速率信息被输入到计算机，其建立和维持期望的速率并且控制等离子体放电以补偿目标的老化和劣化。 有用的目标寿命的结束由计算机根据客观标准确定，以触发适当的行动。

公开(公告)号：US07001491B2

公开(公告)日：2006-02-21

申请号：US10607141

申请日：2003-06-26

Applicant: Michael J. Lombardi ,  Glyn J. Reynolds ,  Robert F. Foster ,  Robert C. Rowan, Jr. ,  Frederick T. Turner

Inventor： Michael J. Lombardi ,  Glyn J. Reynolds ,  Robert F. Foster ,  Robert C. Rowan, Jr. ,  Frederick T. Turner

IPC: C23C14/00

CPC classification number: H01J37/32633 ,  C23C14/54 ,  C23C14/564 ,  H01J37/32449 ,  H01J37/32495 ,  Y10T137/0318 ,  Y10T137/0396

Abstract: One or more chambers of a multi-chamber vacuum processing apparatus are provided with a high gas flow conductance path to an exhaust volume of the apparatus that is maintained at high vacuum with a high vacuum pump. Separate pumps for the one or more chambers are made unnecessary by providing such chambers with a protective deposition shield or shield set that is configured to substantially protect walls of the chamber and the gas flow conductance path from deposition and to partially impede the gas flow from the chamber through the gas flow conductance path to the exhaust volume so that the chamber can be operated at a higher pressure than that of the exhaust volume and the chambers can be operated at different pressures and without cross-contamination. Preferably, a nested set of chamber shields is used. A controller is programmed to control the processing of wafers in the chambers by controlling the supply of process gas into the chambers.

Abstract translation: 多室真空处理装置的一个或多个室具有通过高真空泵保持在高真空下的装置排气量的高气流导通路径。 通过为这样的室提供保护性沉积屏蔽或屏蔽组，使得用于一个或多个室的单独的泵是不必要的，该保护沉积屏蔽或屏蔽组被配置为基本上保护室的壁和气体流动传导路径不被沉积并且部分地阻止气流从 通过气体导流通道进入排气容积，使得室能够以比排气容积更高的压力运行，并且室可以在不同的压力下操作并且没有交叉污染。 优选地，使用嵌套的室屏蔽套。 控制器被编程为通过控制进入腔室的工艺气体的供应来控制腔室中的晶片的处理。

公开(公告)号：US4756815A

公开(公告)日：1988-07-12

申请号：US106343

申请日：1979-12-21

Applicant: Frederick T. Turner ,  Martin A. Hutchinson ,  R. Howard Shaw ,  Lawrence T. Lamont, Jr.

Inventor： Frederick T. Turner ,  Martin A. Hutchinson ,  R. Howard Shaw ,  Lawrence T. Lamont, Jr.

IPC: B65G49/07 ,  C23C14/34 ,  C23C14/50 ,  C23C14/54 ,  C23C14/56 ,  H01L21/00 ,  H01L21/02 ,  H01L21/203 ,  H01L21/285 ,  H01L21/31 ,  H01L21/3205 ,  H01L21/67 ,  H01L21/677 ,  H01L21/687 ,  C23C14/36

CPC classification number: H01L21/67748 ,  C23C14/34 ,  C23C14/50 ,  C23C14/541 ,  C23C14/56 ,  H01L21/67109 ,  H01L21/67751 ,  H01L21/68707

Abstract: Semiconductor wafers having patterns of steps and grooves defining microcircuit elements thereon are coated with metallic film by supporting the wafers individually adjacent a respective ring-shaped sputtering source in stationary relationship thereto. Within a short deposition time of approximately one minute, good uniformity of deposition across the main wafer plane is obtained by maintaining source-to-wafer spacing less than the diameter of the source, and an effective source diameter (D.sub.s) larger than the diameter of wafer (D.sub.w) with the coating being performed within an argon environment of 2 to 20 microns pressure. Good step coverage across all surfaces of steps and grooves is likewise obtained, and is further enhanced by confining the source-to-wafer spacing ranges to certain values within about 0.4 D.sub.s to 0.9 D.sub.s and the wafer diameter to certain values up to about 0.7 D.sub.s. To effectuate such individual wafer processing on a continuous basis and preserve the evacuated argon environment, a vacuum chamber sputter coating apparatus is provided which has a number of work stations therein, at least one of which includes said ring-shaped sputtering source. Also included is a load lock; and an intermittently rotating vertical plate-like wafer carrier means therewithin positioned closely adjacent the chamber entrance, and carrying wafers in turn from the load lock to the work stations. The carrier includes apertures each accepting a wafer therewithin in an upright position, with the wafers edgewise resiliently supported by clip means, without the use of any externally-originating supports such as platens. A closure member within the chamber is movable against the plate opposite the chamber entrance to close off the plate aperture from the chamber environment during loading and unloading of a wafer, and a door is provided to close the chamber opening and thus complete a thin low-volume load lock. The door is also provided with vacuum means to grasp a wafer presented vertically by a blade-like elevator which cooperates with a cassette and conveyor moving the cassette along a horizontal path below the chamber entrance. The cassette holds wafers vertically, and the blade passes therethrough to lift individual wafers edgewise to the door vacuum means. Closure of the door inserts the wafer into the clip means within the carrier and chamber, and the reverse operation extracts a wafer previously coated at a sputtering work station. Both surfaces of the wafer can be accessed by processing equipment, for example, heating or cooling means at some of the work stations. Only a few wafers inside the chamber are at risk at any one time, and introduction of contaminants, debris, as well as disturbances to the chamber environment are minimized.

公开(公告)号：US5605866A

公开(公告)日：1997-02-25

申请号：US565355

申请日：1995-11-30

Applicant: Adolphus E. McClanahan ,  Frederick T. Turner ,  Kenneth E. Anderson ,  Phillip B. Nicholson ,  Martin A. Hutchinson

Inventor： Adolphus E. McClanahan ,  Frederick T. Turner ,  Kenneth E. Anderson ,  Phillip B. Nicholson ,  Martin A. Hutchinson

IPC: C23C14/50 ,  H01L21/687 ,  H01L21/302

CPC classification number: H01L21/68728 ,  H01L21/68735

Abstract: An apparatus for releasably clamping a substrate to a support platform, or other support means, at a face of the substrate is described. In one embodiment, a retractable clamp holds a substrate near its edges on a support platform when the clamp is in its fully extended position. One or more leaf springs are mounted to the clamp and apply force to the substrate at respective points in the event the substrate adheres to the clamp, thereby releasing the substrate from the clamp. In a preferred embodiment of the present invention, one or more activators are positioned in cooperative relationship to the leaf springs to cause the leaf springs to retract into recesses in the clamp when the clamp is extended against the substrate. In their retracted position, the leaf springs do not contact the substrate so as to minimize the generation of particle contamination and the chance of the release leaf springs themselves adhering to the substrate.

Abstract translation: 描述了一种用于将衬底可释放地夹持在衬底的表面处的支撑平台或其他支撑装置的装置。 在一个实施例中，当夹具处于其完全伸出位置时，可伸缩夹具将基板保持在支撑平台上的边缘附近。 一个或多个板簧安装到夹具上，并且在衬底粘附到夹具的情况下在各个点施加力到衬底，从而将衬底从夹具释放。 在本发明的一个优选实施例中，一个或多个活化剂被定位成与板簧成协作关系，以使得当夹具延伸抵靠衬底时，片弹簧缩回到夹具中的凹槽中。 在其缩回位置，片簧不接触基板，以便最小化颗粒污染的产生和释放板簧自身粘附到基板的机会。

公开(公告)号：US5281320A

公开(公告)日：1994-01-25

申请号：US680219

申请日：1991-04-04

Applicant: Frederick T. Turner ,  Martin A. Hutchinson ,  R. Howard Shaw ,  Lawrence T. Lamont, Jr.

Inventor： Frederick T. Turner ,  Martin A. Hutchinson ,  R. Howard Shaw ,  Lawrence T. Lamont, Jr.

IPC: C23C14/34 ,  C23C14/50 ,  C23C14/54 ,  C23C14/56 ,  H01L21/00 ,  H01L21/677 ,  H01L21/687

CPC classification number: H01L21/67751 ,  C23C14/34 ,  C23C14/50 ,  C23C14/541 ,  C23C14/56 ,  H01L21/67098 ,  H01L21/67109 ,  H01L21/68707

Abstract: Semiconductor wafers having patterns of steps and grooves defining microcircuit elements thereon are coated with metallic film by supporting the wafers individually adjacent a respective ring-shaped sputtering source in stationary relationship thereto. To effectuate such individual wafer processing on a continuous basis and preserve the evacuated argon environment, a vacuum chamber sputter coating apparatus is provided which has a number of work stations therein, at least one of which includes said ring-shaped sputtering source. Also included is a load lock, and an intermittently rotting vertical plate-like wafer carrier means therewithin positioned closely adjacent the chamber entrance, and carrying wafers in turn from the load lock to the work stations. The carrier includes apertures each accepting a wafer therewithin in an upright position, with the wafers edgewise resiliently supported by clip means, without the use of any externally-originating supports such as platens. Both surfaces of wafer can be accessed by processing equipment, for example, heating or cooling means at some of the work stations. Only a few wafers inside the chamber are at risk at any one time, and introduction of contaminants, debris, as well as disturbances to the chamber environment minimized.

Abstract translation: 具有限定其上的微电路元件的步骤和凹槽的图案的半导体晶片通过将晶片与静止关系的各个环形溅射源单独地相邻地支撑晶片来涂覆金属膜。 为了连续地实现这种单独的晶片处理并保持抽真空的氩气环境，提供了一种在其中具有多个工位的真空室溅射镀膜装置，其中至少一个包括所述环形溅射源。 还包括一个负载锁定，以及一个间歇性地旋转的垂直板状晶片承载装置，其位于与腔室入口紧密相邻的位置，并将晶片依次从负载锁传送到工作站。 载体包括各自在直立位置接收晶片的孔，其中晶片沿边缘由夹持装置弹性地支撑，而不使用任何外部来源的支撑件例如压板。 晶片的两个表面都可以通过处理设备来访问，例如在某些工作站的加热或冷却装置。 任何时候，室内只有几个晶圆处于危险之中，污染物，碎片以及室内环境的扰动引入最小化。

公开(公告)号：US5513594A

公开(公告)日：1996-05-07

申请号：US140351

申请日：1993-10-20

Applicant: Adolphus E. McClanahan ,  Frederick T. Turner ,  Kenneth E. Anderson ,  Phillip B. Nicholson ,  Martin A. Hutchinson

Inventor： Adolphus E. McClanahan ,  Frederick T. Turner ,  Kenneth E. Anderson ,  Phillip B. Nicholson ,  Martin A. Hutchinson

IPC: C23C14/50 ,  H01L21/687 ,  B05C13/00

CPC classification number: H01L21/68728 ,  H01L21/68735

Abstract: An apparatus for releasably clamping a substrate to a support platform, or other support system, at a face of the substrate is described. In one embodiment, a retractable clamp holds a substrate near its edges on a support platform when the clamp is in its fully extended position. One or more leaf springs are mounted to the clamp and apply force to the substrate at respective points in the event the substrate adheres to the clamp, thereby releasing the substrate from the clamp. In a preferred embodiment of the present invention, one or more activators are positioned in cooperative relationship to the leaf springs to cause the leaf springs to retract into recesses in the clamp when the clamp is extended against the substrate. In their retracted position, the leaf springs do not contact the substrate so as to minimize the generation of particle contamination and the chance of the release leaf springs themselves adhering to the substrate.

Abstract translation: 描述了一种用于将衬底可释放地夹持到衬底的表面处的支撑平台或其他支撑系统的装置。 在一个实施例中，当夹具处于其完全伸出位置时，可伸缩夹具将基板保持在支撑平台上的边缘附近。 一个或多个板簧安装到夹具上，并且在衬底粘附到夹具的情况下在各个点施加力到衬底，从而将衬底从夹具释放。 在本发明的一个优选实施例中，一个或多个活化剂被定位成与板簧成协作关系，以使得当夹具延伸抵靠衬底时，片弹簧缩回到夹具中的凹槽中。 在其缩回位置，片簧不接触基板，以便最小化颗粒污染的产生和释放板簧自身粘附到基板的机会。

公开(公告)号：US4392938A

公开(公告)日：1983-07-12

申请号：US320385

申请日：1981-11-12

Applicant: David J. Harra ,  Frederick T. Turner

Inventor： David J. Harra ,  Frederick T. Turner

IPC: H01L21/302 ,  C23F4/00 ,  H01J37/32 ,  H01J37/34 ,  H01L21/3065 ,  C23C15/00

CPC classification number: H01J37/32623 ,  C23F4/00 ,  H01J37/32697 ,  H01J37/34

Abstract: An RF etch table has a biased extension member positioned adjacent its periphery. The extension member is electrically conductive, but is insulated from other conductive members in the system. The extension member is positioned with respect to the periphery of the table in a manner such that the boundary of the plasma induced above the etch table is continued beyond the periphery of the etch table, thereby eliminating the focusing of ions onto the edges of an item being etched on the table. The potential impressed upon the extension member produces a dark space above its surface having a sufficient height so that the horizontal configuration of the sheath above the etch table is continued beyond its edges. More uniform etching is accomplished.

Abstract translation: RF蚀刻台具有邻近其周边定位的偏置的延伸构件。 延伸构件是导电的，但是与系统中的其它导电构件绝缘。 延伸构件相对于工作台的周边以这样的方式定位，使得在蚀刻台上方引起的等离子体的界面延续超过蚀刻台的周边，从而消除了离子聚焦到物品的边缘上 被刻在桌子上。 在延伸构件上施加的电势在其表面上产生具有足够高度的暗空间，使得蚀刻台上方的护套的水平构型延续超过其边缘。 实现更均匀的蚀刻。