公开(公告)号：US20100133090A1

公开(公告)日：2010-06-03

申请号：US12684359

申请日：2010-01-08

申请人： Tetsuya Endo ,  Einstein Noel Abarra

发明人： Tetsuya Endo ,  Einstein Noel Abarra

IPC分类号： C23C14/36

CPC分类号： C23C14/225 ,  C23C14/044 ,  C23C14/3407 ,  C23C14/505 ,  C23C14/548 ,  H01F41/18 ,  H01J37/34 ,  H01J37/3405 ,  H01J37/3414 ,  H01J37/3435 ,  H01J37/3455

摘要： To provide a sputtering apparatus that enables oblique film forming by arranging a target and a substrate so as to allow sputtered particles emitted from the target to obliquely enter the substrate selectively, and can form a magnetic film having high uniaxial magnetic anisotropy uniformly and compactly. A sputtering apparatus includes a cathode having a sputtering target supporting surface, the cathode being provided with a rotation axis about which the sputtering target supporting surface rotates, and a stage having a substrate supporting surface, the stage being provided with a rotation axis about which the substrate supporting surface rotates, and the sputtering apparatus is constituted such that the sputtering target supporting surface and the substrate supporting surface face to each other, and are rotatable independently about respective rotation axes. Further, it is constituted such that a shield plate is arranged between the sputtering target supporting surface and the substrate supporting surface, and is rotatable independently from the cathode and the stage.

摘要翻译： 为了提供一种溅射装置，其能够通过配置目标物和基板使得能够进行倾斜成膜，从而使从靶材发射的溅射粒子选择性倾斜地进入基板，并且可以均匀且紧凑地形成具有高单轴磁各向异性的磁性膜。 溅射装置包括具有溅射靶支撑表面的阴极，阴极设置有溅射靶支撑表面旋转的旋转轴，以及具有基板支撑表面的台，该台设置有旋转轴线， 基板支撑面旋转，并且溅射装置构成为使得溅射靶支撑表面和基板支撑表面彼此面对，并且可以围绕各自的旋转轴独立地旋转。 此外，其构造使得屏蔽板布置在溅射靶支撑表面和基板支撑表面之间，并且可独立于阴极和台转动。

公开(公告)号：US20100075082A1

公开(公告)日：2010-03-25

申请号：US12631991

申请日：2009-12-07

申请人： Minoru KOMADA ,  Yoshihiro KISHIMOTO

发明人： Minoru KOMADA ,  Yoshihiro KISHIMOTO

IPC分类号： B32B1/02 ,  B32B27/06 ,  C23C14/34 ,  C23C14/35 ,  C23C14/36

CPC分类号： C23C14/10 ,  B32B27/00 ,  B32B33/00 ,  B32B2307/7244 ,  B32B2553/00 ,  C23C14/0676 ,  H01L21/02126 ,  H01L21/02266 ,  H01L21/3143 ,  H01L21/31633 ,  Y10T428/1064 ,  Y10T428/1334 ,  Y10T428/1352 ,  Y10T428/265 ,  Y10T428/28 ,  Y10T428/31667

摘要： An object of the present invention is to provide a barrier film having the extremely high barrier property and the better transparency, a method for manufacturing the same, and a laminated material, a container for wrapping and an image displaying medium using the barrier film. According to the present invention, there is provided a barrier film provided with a barrier layer on at least one surface of a substrate film, wherein the barrier layer is a silicon oxide film having an atomic ratio in a range of Si:O:C=100:140 to 170:20 to 40, peak position of infrared-ray absorption due to Si—O—Si stretching vibration between 1060 to 1090 cm−1, a film density in a range of 2.6 to 2.8 g/cm3, and a distance between grains of 30 nm or shorter. Still more, there is provided a barrier film provided with a barrier layer on at least one surface of a substrate film, has a composition wherein the barrier layer is a silicon oxi-nitride film, and the silicon oxi-nitride film has an atomic ratio in a range of Si:O:N:C=100:60 to 90:60 to 90:20 to 40, a maximum peak of infrared-ray absorption due to Si—O stretching vibration and Si—N stretching vibration is in a range of 820 to 930 cm−1, a film density is in a range of 2.9 to 3.2 g/cm3, and a distance between grains is 30 nm or shorter.

摘要翻译： 本发明的目的是提供一种具有极高的阻隔性和更好的透明度的阻挡膜及其制造方法，以及叠层材料，用于包装的容器和使用阻挡膜的图像显示介质。 根据本发明，提供了一种在基材膜的至少一个表面上设置有阻挡层的阻挡膜，其中阻挡层是原子比在Si：O：C = 100：140〜170：20〜40，由于Si-O-Si伸长振动在1060〜1090cm -1之间的红外线吸收的峰值位置，膜密度在2.6〜2.8g / cm 3范围内， 颗粒之间的距离为30nm或更短。 另外，提供了在基板薄膜的至少一个表面上设置有阻挡层的阻挡膜，具有其中阻挡层为硅氧化氮膜的组成，硅氧化氮膜具有原子比 在Si：O:N:C = 100:60至90:60至90:20至40的范围内，由于Si-O伸缩振动和Si-N伸缩振动导致的红外线吸收的最大峰值为 范围为820〜930cm -1，膜密度为2.9〜3.2g / cm 3，晶粒间距离为30nm以下。

公开(公告)号：US20090187253A1

公开(公告)日：2009-07-23

申请号：US12355355

申请日：2009-01-16

申请人： Maria Astrand ,  Axel Genvad

发明人： Maria Astrand ,  Axel Genvad

IPC分类号： A61F2/28 ,  C23C14/36

CPC分类号： A61F2/30767 ,  A61B17/866 ,  A61C8/0012 ,  A61F2002/3093 ,  A61F2002/3098 ,  A61F2310/00017 ,  A61F2310/00023 ,  A61F2310/00029 ,  A61F2310/00616 ,  A61L27/306 ,  A61L31/088 ,  A61L2400/18 ,  A61L2430/02 ,  C23C14/083 ,  C23C14/325

摘要： The present invention relates to a method of making a coated medical bone implant comprising the step of providing a substrate and then onto said substrate depositing a bioactive crystalline TiO2 coating using PVD (Physical Vapor Deposition) technique at a temperature of more than about 50° C. but less than about 800° C.Coated implants obtained by the method according to the invention display an enhanced biomimetic response.

摘要翻译： 本发明涉及一种制造涂覆医用骨植入物的方法，该方法包括以下步骤：在大于约50℃的温度下，使用PVD（物理气相沉积）技术提供基底然后沉积到所述基底上沉积生物活性结晶TiO 2涂层 但小于约800℃。通过根据本发明的方法获得的涂覆植入物显示增强的仿生反应。

公开(公告)号：US6113752A

公开(公告)日：2000-09-05

申请号：US348914

申请日：1999-07-07

申请人： Frank Hollstein

发明人： Frank Hollstein

IPC分类号： C23C14/35 ,  C23C14/22 ,  C23C14/34 ,  H01J37/34 ,  C23C14/36

CPC分类号： H01J37/3423 ,  C23C14/3407 ,  H01J37/3405

摘要： A device and a process for multilayer PVD ("Physical Vapor Deposition") coating of substances includes one or more sputter target systems. A sputter target system generally consists of a plurality of individual targets arranged in the cross-sectional shape of a hollow regular polygon. The arrangement is rotatably mounted about the axis of symmetry of the hollow polygon. In the interior of the hollow polygon, preferably magnetrons (inner magnetrons) are present. By virtue of shielding, only one individual target of the sputter target system is exposed to the ionic bombardment at any one time. The multilayer coating is accomplished according to the invention by a coating strategy with step wise rotation, controlled according to plan, of the sputter target system in angular steps corresponding to the order of symmetry of the hollow polygon. Besides magnetron sputter, the invention is applicable also to other PVD coating processes, preferably to coating by means of electric arc, low-voltage electron beam and/or laser-supported evaporation or a combination of such processes.

摘要翻译： 多层PVD（“物理气相沉积”）涂层的装置和方法包括一个或多个溅射靶系统。 溅射靶系统通常由以中空的正多边形的横截面形状布置的多个单独的目标组成。 该布置围绕中空多边形的对称轴可旋转地安装。 在中空多边形的内部，优选存在磁控管（内磁控管）。 通过屏蔽，溅射靶系统中只有一个单独的靶在任何一个时间都暴露于离子轰击。 根据本发明，通过涂覆策略实现多层涂层，该涂层策略以对应于中空多边形的对称顺序的角度步长逐步旋转，按照计划控制溅射靶系统。 除了磁控管溅射之外，本发明也适用于其它PVD涂覆工艺，优选通过电弧，低电压电子束和/或激光支持的蒸镀或这些工艺的组合进行涂覆。

公开(公告)号：US5718815A

公开(公告)日：1998-02-17

申请号：US711885

申请日：1996-09-12

申请人： Joachim Szczyrbowski ,  Gotz Teschner ,  Gunter Brauer

发明人： Joachim Szczyrbowski ,  Gotz Teschner ,  Gunter Brauer

IPC分类号： C23C14/34 ,  C23C14/40 ,  C23C14/56 ,  H01J37/34 ,  C23C14/36

CPC分类号： H01J37/32458 ,  H01J37/34 ,  H01J37/3408 ,  H01J37/3426 ,  H01J2237/0206

摘要： A vacuum chamber includes a central compartment (1) in which a diode cathode (6) carrying an electrically conductive sputtering target (7) is located, and two outer compartments (11, 12) in which magnetron cathodes (13, 14) carrying target 15, 16) are located, the magnetron cathodes (13, 14) being connected to respective poles (20, 21) of an AC power source. The outer compartments (11, 12) are separated from the central compartment by walls having openings (33, 34) which flank a space (28) between the sputtering target (6) and the substrate (3). Process gas lines 24, 25) are arranged to introduce process gas into this space (3).

摘要翻译： 真空室包括中央隔室（1），其中位于载有导电溅射靶（7）的二极管阴极（6）和两个外部隔室（11,12）中，其中磁控管阴极（13,14）承载目标 15,16），磁控阴极（13,14）连接到交流电源的相应极（20,21）。 外隔室（11,12）通过具有在溅射靶（6）和衬底（3）之间的空间（28）侧面的开口（33,34）的壁与中央隔室分离。 处理气体管线24,25被布置成将处理气体引入该空间（3）中。

公开(公告)号：US5492607A

公开(公告)日：1996-02-20

申请号：US018845

申请日：1993-02-17

申请人： Daniel Yap

发明人： Daniel Yap

IPC分类号： H01S5/00 ,  H01S5/02 ,  H01S5/10 ,  H01S5/18 ,  C23C14/36 ,  C03C25/02 ,  H01L21/20 ,  H01L21/306

CPC分类号： H01S5/02292 ,  H01S5/18 ,  H01S5/0071 ,  H01S5/0203 ,  H01S5/026 ,  H01S5/1014 ,  H01S5/1082

摘要： A surface-emitting laser system includes a laser that emits a vertically divergent beam generally parallel to the substrate on which it is formed, and a turning mirror in the path of the beam that extends up from the substrate to a level well above the laser height. The extended mirror area reflects a greater portion of the beam than prior planar designs, increasing the output efficiency and providing a smoother beam pattern. One fabrication method employs a masking and ion beam milling technique that uses an accumulation of redeposited material to form the additional mirror area, with a thick mask layer that is later removed guiding the redeposition. An alternate fabrication method involves epitaxial growth of an additional layer of material above the conventional laser epilayers, with the additional layer subsequently removed from the laser region but retained in the mirror region.

摘要翻译： 表面发射激光系统包括激光器，其发射大致平行于其上形成的基板的垂直发散光束，以及在从基板向上延伸到高于激光高度的电平的光束路径中的转向镜 。 扩展的镜面积反映了比现有的平面设计更大部分的光束，增加了输出效率并提供了更平滑的光束图案。 一种制造方法采用掩模和离子束研磨技术，其使用再沉积材料的堆积形成附加的反射镜区域，随后去除引导再沉积的厚掩模层。 替代的制造方法包括在常规激光外延层上方外延生长另外的材料层，附加层随后从激光区域移除，但保留在反射镜区域中。

公开(公告)号：US4950956A

公开(公告)日：1990-08-21

申请号：US96862

申请日：1987-09-15

申请人： Tatsuo Asamaki ,  Kiyoshi Hoshino ,  Katsumi Ukai ,  Yoichi Ino ,  Toshio Adachi ,  Tsutomu Tsukada

发明人： Tatsuo Asamaki ,  Kiyoshi Hoshino ,  Katsumi Ukai ,  Yoichi Ino ,  Toshio Adachi ,  Tsutomu Tsukada

IPC分类号： C23C8/36 ,  C23C14/35 ,  C23C14/36 ,  C23C16/50 ,  C23C16/511 ,  C23F4/00 ,  H01J37/32 ,  H01J37/34 ,  H05H1/24

CPC分类号： H01J37/32623 ,  H01J37/32082 ,  H01J37/3266 ,  H01J37/3402 ,  H01J2237/3321

摘要： A plasma processing apparatus comprises a vacuum vessel, an anode and a cathode arranged in the vacuum vessel, and a discharge producing power source for intermittently producing main discharge between the anode and the cathode to process a substrate arranged in the proximity of the anode and the cathode. The discharge producing power source comprises a magnetic field setting device including magnetic coils arranged closely to the vacuum vessel and having pole pieces and alternate current power sources for the magnetic coils. The plasma processing apparatus is able to remarkably increase processing speeds and considerably reduce the temperature rise and damage therefrom of substrates to be processed. Moreover, the magnetic field setting device is arranged in a small size to make the plasma processing apparatus compact and small-sized.

摘要翻译： 等离子体处理装置包括设置在真空容器中的真空容器，阳极和阴极以及用于间歇地在阳极和阴极之间产生主放电的放电产生电源，以处理布置在阳极附近的衬底和 阴极。 放电产生电源包括磁场设定装置，其包括紧密配置在真空容器上的磁性线圈，并具有用于磁性线圈的极片和交流电源。 等离子体处理装置能够显着地增加处理速度，并显着地降低温度升高并损坏要处理的基板。 此外，磁场设定装置被布置成小尺寸以使等离子体处理装置小型化。

公开(公告)号：US4911809A

公开(公告)日：1990-03-27

申请号：US228897

申请日：1988-08-05

申请人： Christopher J. Wort ,  Lynn Y. Dorey

发明人： Christopher J. Wort ,  Lynn Y. Dorey

IPC分类号： H01L21/203 ,  C23C14/34 ,  C23C14/35 ,  C23C14/36

CPC分类号： C23C14/352 ,  C23C14/3457

摘要： A thin film deposition process comprises the steps of providing a first target area on a magnetron electrode, sputtering particles from said area so that they fall onto a heated substrate body for forming the required deposit, simultaneously operating a sputtering gun such that further particles are dislodged from a second target area and directed towards the substrate, the two resulting particle plasmas mixing at the substrate surface such that a deposit of a predetermined chemical composition is produced.This allows a multicomponent material such as a PLZT ceramic to be deposited without a change in composition due to different volatilities etc. of the components.

公开(公告)号：US4774437A

公开(公告)日：1988-09-27

申请号：US835072

申请日：1986-02-28

申请人： John C. Helmer ,  Kenneth J. Doniger

发明人： John C. Helmer ,  Kenneth J. Doniger

IPC分类号： H01J27/14 ,  H01J37/08 ,  C23C14/36 ,  H01J27/02 ,  H05H1/00

CPC分类号： H01J27/14 ,  H01J37/08

摘要： An ion source for an intense ion beam from a solid source is formed with a cathode around a central anode. A source of magnetic field with closely spaced poles is formed around a central region of the cathode so that the most intense region of the magnetic field is a torus on the inside of the cathode and the field at the anode is weak. A torus of plasma can be formed near the inside surface of the cathode which can be coated with solid source material. An ion beam can be extracted through an aperture in the cathode.

摘要翻译： 来自固体源的强离子束的离子源由中央阳极周围的阴极形成。 在阴极的中心区域周围形成具有紧密间隔的极点的磁场源，使得磁场的最强烈区域是阴极内部的环面，并且阳极处的场弱。 可以在可以涂覆固体源材料的阴极的内表面附近形成等离子体圆环。 可以通过阴极中的孔提取离子束。

公开(公告)号：US4710283A

公开(公告)日：1987-12-01

申请号：US574882

申请日：1984-01-30

申请人： Bawa Singh ,  Peter R. Denton

发明人： Bawa Singh ,  Peter R. Denton

IPC分类号： H01J27/14 ,  H01J37/08 ,  C23C14/36 ,  H01J27/02

CPC分类号： H01J27/14 ,  H01J37/08

摘要： The present device comprises, in a preferred embodiment, a permanent magnet assembly which is formed to closely resemble a doughnut with the inside surface defining an aperture having first and second ends. Said inside surface is formed concave to substantially resemble the letter "C", or a mirror image letter "C". The permanent magnet provides magnetic flux from one end of the "C" to the other and hence the magnetic flux lines, or the magnetic flux field, form, in conjunction with the concave letter "C" configuration of the permanent magnet, an enclosure. Within the enclosure there is located an anode, and the anode is shielded from electrons by the magnetic flux field. In one embodiment, in close proximity to the second end of said aperture of the permanent magnet piece there is located a cathode, while at said first end of the aperture there is located a screen. In another embodiment, which is used for sputtering, there is no screen employed. A source of electrical voltage (which has a first terminal with a first voltage and a second terminal with a second voltage, which second voltage is negative to said first voltage) has it first and second terminals respectively connected to said anode and said cathode to cause an electrostatic field therebetween. Said cathode is not coupled to said permanent magnet in a permanent way and in some uses in movable. The arrangement has a means for injecting an ionizable fluid, such as oxygen, nitrogen, argon or the like, into the region defined by the position of the magnetic flux, the position of the cathode and the position of the screen. Accordingly when electrical energy is applied to the anode and the cathode, a dense plasma results and ultimately ions pass through the screen to provide a source of ions, and/or ultimately dislodged material passes from the cathode to a substrate.

摘要翻译： 在优选实施例中，本装置包括永磁体组件，其形成为与环形体非常相似，内表面限定具有第一端和第二端的孔。 所述内表面形成为凹形，基本上类似于字母“C”，或镜像字母“C”。 永久磁铁从“C”的一端到另一端提供磁通量，因此与永久磁铁的凹形“C”结构一起形成磁通线或磁通场。 在外壳内设有阳极，阳极通过磁通场屏蔽电子。 在一个实施例中，在非常接近永磁体片的所述孔的第二端的位置处设有阴极，而在孔的所述第一端处设有屏幕。 在用于溅射的另一实施例中，不使用屏幕。 电压源（其具有第一电压的第一端子和具有第二电压的第二端子，该第二电压与所述第一电压负相关），其第一和第二端子分别连接到所述阳极和所述阴极，以产生 它们之间的静电场。 所述阴极不以永久的方式耦合到所述永磁体，并且在可移动的方式中并不是一些用途。 该装置具有将诸如氧，氮，氩等的可电离流体注入由磁通量位置，阴极位置和屏幕位置限定的区域中的装置。 因此，当将电能施加到阳极和阴极时，产生致密的等离子体，并且最终离子通过屏幕以提供离子源，和/或最终移出的材料从阴极通过到衬底。