公开(公告)号：US08776542B2

公开(公告)日：2014-07-15

申请号：US12975962

申请日：2010-12-22

申请人： Tetsuya Endo ,  Einstein Noel Abarra

发明人： Tetsuya Endo ,  Einstein Noel Abarra

IPC分类号： F25D23/12 ,  H05K7/20 ,  F25D25/02

CPC分类号： H05K7/20009 ,  F25D25/027 ,  H01J37/34 ,  H05K7/20372 ,  H05K7/20545

摘要： A cooling system that cools a wafer in a vacuum chamber of a sputtering apparatus, includes a wafer cooling stage for cooling the wafer, a cooling mechanism for cooling the wafer cooling stage, cooling gas supply units which introduces a cooling gas to the wafer cooling stage, a wafer rotating mechanism which holds the wafer in a state separated from the wafer cooling stage by a predetermined gap, and is rotated while holding the wafer, and a driving mechanism which rotates the wafer rotating mechanism at a predetermined rotational speed.

摘要翻译： 在溅射装置的真空室中冷却晶片的冷却系统包括用于冷却晶片的晶片冷却阶段，用于冷却晶片冷却级的冷却机构，将冷却气体引入到晶片冷却级的冷却气体供给单元 晶片旋转机构，其将晶片保持在与晶片冷却台分离预定间隙的状态，并且在保持晶片的同时旋转;以及驱动机构，其以预定旋转速度旋转晶片旋转机构。

公开(公告)号：US20110272278A1

公开(公告)日：2011-11-10

申请号：US13116492

申请日：2011-05-26

申请人： Kyosuke Sugi ,  Tetsuya Endo ,  Einstein Noel Abarra

发明人： Kyosuke Sugi ,  Tetsuya Endo ,  Einstein Noel Abarra

IPC分类号： C23C14/34

CPC分类号： C23C14/225 ,  C23C14/34 ,  C23C14/345 ,  C23C14/505 ,  H01J37/32568 ,  H01J37/34

摘要： The present invention provides a sputtering apparatus and a film-forming method capable of forming a magnetic film having a reduced variation in the orientation of the magnetic anisotropy. The sputtering apparatus of the present invention is equipped with a rotatable cathode and a rotatable stage. The stage can have an electrostatic chuck. Moreover, the stage may electrically be connected with a bias power source capable of applying a bias voltage to the stage. Furthermore, the stage may have the electrostatic chuck and electrically be connected with the bias power source.

摘要翻译： 本发明提供一种能够形成具有降低的磁各向异性取向变化的磁性膜的溅射装置和成膜方法。 本发明的溅射装置装备有可旋转阴极和可旋转台。 舞台上可以有一个静电吸盘。 此外，该级可以与能够向该级施加偏置电压的偏置电源电连接。 此外，该台可以具有静电卡盘并与偏置电源电连接。

公开(公告)号：US20100155227A1

公开(公告)日：2010-06-24

申请号：US12620654

申请日：2009-11-18

申请人： Tetsuya Endo ,  Einstein Noel Abarra

发明人： Tetsuya Endo ,  Einstein Noel Abarra

IPC分类号： C23C14/54 ,  C23C14/50

CPC分类号： C23C14/505 ,  C23C14/046 ,  C23C14/225 ,  C23C14/54 ,  H01J37/32568 ,  H01J37/3266 ,  H01J37/32752 ,  H01J37/34

摘要： The present invention provides a sputtering apparatus and a film forming method that can form a high quality film in a groove having a sloping wall such as a V-groove. The sputtering apparatus of the present invention includes a rotatable cathode (102), a rotatable stage (101), and a rotatable shield plate (105). The sputtering apparatus controls rotation of at least one of the cathode (102), the stage (101), and the shield plate (105) so that sputtering particles are incident on the V-groove formed in a substrate (104) at an angle of 50° or less with respect to a normal to a sloping wall of the V-groove.

摘要翻译： 本发明提供一种溅射装置和成膜方法，其可以在具有诸如V形槽的倾斜壁的槽中形成高质量的膜。 本发明的溅射装置包括可旋转阴极（102），可旋转台（101）和可旋转屏蔽板（105）。 溅射装置控制阴极（102），载物台（101）和屏蔽板（105）中的至少一个的旋转，使得溅射颗粒以一定角度入射到形成在基板（104）中的V形槽 相对于V形槽的倾斜壁的法线为50°以下。

公开(公告)号：US20100133090A1

公开(公告)日：2010-06-03

申请号：US12684359

申请日：2010-01-08

申请人： Tetsuya Endo ,  Einstein Noel Abarra

发明人： Tetsuya Endo ,  Einstein Noel Abarra

IPC分类号： C23C14/36

CPC分类号： C23C14/225 ,  C23C14/044 ,  C23C14/3407 ,  C23C14/505 ,  C23C14/548 ,  H01F41/18 ,  H01J37/34 ,  H01J37/3405 ,  H01J37/3414 ,  H01J37/3435 ,  H01J37/3455

摘要： To provide a sputtering apparatus that enables oblique film forming by arranging a target and a substrate so as to allow sputtered particles emitted from the target to obliquely enter the substrate selectively, and can form a magnetic film having high uniaxial magnetic anisotropy uniformly and compactly. A sputtering apparatus includes a cathode having a sputtering target supporting surface, the cathode being provided with a rotation axis about which the sputtering target supporting surface rotates, and a stage having a substrate supporting surface, the stage being provided with a rotation axis about which the substrate supporting surface rotates, and the sputtering apparatus is constituted such that the sputtering target supporting surface and the substrate supporting surface face to each other, and are rotatable independently about respective rotation axes. Further, it is constituted such that a shield plate is arranged between the sputtering target supporting surface and the substrate supporting surface, and is rotatable independently from the cathode and the stage.

摘要翻译： 为了提供一种溅射装置，其能够通过配置目标物和基板使得能够进行倾斜成膜，从而使从靶材发射的溅射粒子选择性倾斜地进入基板，并且可以均匀且紧凑地形成具有高单轴磁各向异性的磁性膜。 溅射装置包括具有溅射靶支撑表面的阴极，阴极设置有溅射靶支撑表面旋转的旋转轴，以及具有基板支撑表面的台，该台设置有旋转轴线， 基板支撑面旋转，并且溅射装置构成为使得溅射靶支撑表面和基板支撑表面彼此面对，并且可以围绕各自的旋转轴独立地旋转。 此外，其构造使得屏蔽板布置在溅射靶支撑表面和基板支撑表面之间，并且可独立于阴极和台转动。

公开(公告)号：US09058962B2

公开(公告)日：2015-06-16

申请号：US13328793

申请日：2011-12-16

申请人： Tetsuya Endo ,  Einstein Noel Abarra

发明人： Tetsuya Endo ,  Einstein Noel Abarra

IPC分类号： H01J37/34 ,  H01F7/02

CPC分类号： H01F7/0273 ,  H01F7/0278 ,  H01J37/3405 ,  H01J37/345 ,  H01J37/3452 ,  H01J37/347 ,  H01J2237/3322

摘要： A magnet unit has a first magnet element and a second magnet element. The first magnet element includes a first magnet which is provided to stand upright on a yoke plate, a second magnet which is provided to stand upright on the yoke plate and has a magnetic pole unlike the first magnet, and a third magnet which is provided with a tilt between the first magnet and the second magnet. The second magnet element includes a fourth magnet which is provided to stand upright on the yoke plate, a fifth magnet which is arranged to stand upright on the yoke plate and has a magnetic pole unlike the fourth magnet, and a sixth magnet which is provided with a tilt between the fourth magnet and the fifth magnet. The first magnet element and the second magnet element are alternately arranged in an endless shape.

摘要翻译： 磁体单元具有第一磁体元件和第二磁体元件。 第一磁体元件包括设置成直立在磁轭板上的第一磁体，设置成直立在磁轭板上并具有与第一磁体不同的磁极的第二磁体，以及第三磁体， 第一磁体和第二磁体之间的倾斜。 第二磁体元件包括：第四磁体，其设置成直立在磁轭板上;第五磁体，其布置成直立在磁轭板上，并具有与第四磁体不同的磁极;以及第六磁体， 在第四磁体和第五磁体之间的倾斜。 第一磁体元件和第二磁体元件交替排列成环形。

公开(公告)号：US20120160673A1

公开(公告)日：2012-06-28

申请号：US13328793

申请日：2011-12-16

申请人： Tetsuya Endo ,  Einstein Noel Abarra

发明人： Tetsuya Endo ,  Einstein Noel Abarra

IPC分类号： C23C14/35 ,  H01F7/02

CPC分类号： H01F7/0273 ,  H01F7/0278 ,  H01J37/3405 ,  H01J37/345 ,  H01J37/3452 ,  H01J37/347 ,  H01J2237/3322

摘要： A magnet unit has a first magnet element and a second magnet element. The first magnet element includes a first magnet which is provided to stand upright on a yoke plate, a second magnet which is provided to stand upright on the yoke plate and has a magnetic pole unlike the first magnet, and a third magnet which is provided with a tilt between the first magnet and the second magnet. The second magnet element includes a fourth magnet which is provided to stand upright on the yoke plate, a fifth magnet which is arranged to stand upright on the yoke plate and has a magnetic pole unlike the fourth magnet, and a sixth magnet which is provided with a tilt between the fourth magnet and the fifth magnet. The first magnet element and the second magnet element are alternately arranged in an endless shape.

摘要翻译： 磁体单元具有第一磁体元件和第二磁体元件。 第一磁体元件包括设置成直立在磁轭板上的第一磁体，设置成直立在磁轭板上并具有与第一磁体不同的磁极的第二磁体，以及第三磁体， 第一磁体和第二磁体之间的倾斜。 第二磁体元件包括：第四磁体，其被设置成直立在磁轭板上;第五磁体，其布置成直立在磁轭板上并具有与第四磁体不同的磁极;以及第六磁体， 在第四磁体和第五磁体之间的倾斜。 第一磁体元件和第二磁体元件交替排列成环形。

公开(公告)号：US08043483B2

公开(公告)日：2011-10-25

申请号：US12684359

申请日：2010-01-08

申请人： Tetsuya Endo ,  Einstein Noel Abarra

发明人： Tetsuya Endo ,  Einstein Noel Abarra

IPC分类号： C23C14/35

CPC分类号： C23C14/225 ,  C23C14/044 ,  C23C14/3407 ,  C23C14/505 ,  C23C14/548 ,  H01F41/18 ,  H01J37/34 ,  H01J37/3405 ,  H01J37/3414 ,  H01J37/3435 ,  H01J37/3455

摘要： To provide a sputtering apparatus that enables oblique film forming by arranging a target and a substrate so as to allow sputtered particles emitted from the target to obliquely enter the substrate selectively, and can form a magnetic film having high uniaxial magnetic anisotropy uniformly and compactly. A sputtering apparatus includes a cathode having a sputtering target supporting surface, the cathode being provided with a rotation axis about which the sputtering target supporting surface rotates, and a stage having a substrate supporting surface, the stage being provided with a rotation axis about which the substrate supporting surface rotates, and the sputtering apparatus is constituted such that the sputtering target supporting surface and the substrate supporting surface face to each other, and are rotatable independently about respective rotation axes. Further, it is constituted such that a shield plate is arranged between the sputtering target supporting surface and the substrate supporting surface, and is rotatable independently from the cathode and the stage.

摘要翻译： 为了提供一种溅射装置，其能够通过配置目标物和基板使得能够进行倾斜成膜，从而使从靶材发射的溅射粒子选择性倾斜地进入基板，并且可以均匀且紧凑地形成具有高单轴磁各向异性的磁性膜。 溅射装置包括具有溅射靶支撑表面的阴极，阴极设置有溅射靶支撑表面旋转的旋转轴，以及具有基板支撑表面的台，该台设置有旋转轴线， 基板支撑面旋转，并且溅射装置构成为使得溅射靶支撑表面和基板支撑表面彼此面对，并且可以围绕各自的旋转轴独立地旋转。 此外，其构造使得屏蔽板布置在溅射靶支撑表面和基板支撑表面之间，并且可独立于阴极和台转动。

公开(公告)号：US20100213048A1

公开(公告)日：2010-08-26

申请号：US12701922

申请日：2010-02-08

申请人： Tetsuya Endo ,  Einstein Noel Abarra

发明人： Tetsuya Endo ,  Einstein Noel Abarra

IPC分类号： C23C14/35

CPC分类号： C23C14/35 ,  H01J37/3408 ,  H01J37/3452

摘要： To provide a magnetron sputtering cathode, a magnetron sputtering apparatus, and a method of manufacturing a magnetic device, capable of generating a leakage magnetic field sufficiently large to form a magnetic tunnel necessary for discharge on the surface of a target even when the target is a magnetic body and thick and a ferromagnetic body is used as the target. The magnetron sputtering cathode of the present invention includes a target having a second annular groove provided on the sputtering surface of the target, a third annular projection provided on the non-sputtering surface of the target, a fourth annular groove provided outside the third annular projection on the non-sputtering surface, and a fourth annular projection provided outside the fourth annular groove on the non-sputtering surface. Further, the magnetron sputtering cathode includes a first magnet and a second magnet 6 having a polarity different from that of the first magnet on the non-sputtering surface side.

摘要翻译： 为了提供一种磁控溅射阴极，磁控管溅射装置和一种制造磁性装置的方法，能够产生足够大的泄漏磁场，以形成目标表面上放电所需的磁场，即使目标为 使用磁体和厚铁磁体作为目标。 本发明的磁控溅射阴极包括具有设置在靶的溅射表面上的第二环形槽的靶，设置在靶的非溅射表面上的第三环形突起，设置在第三环形突起的外侧的第四环形槽 在非溅射表面上的第四环形槽外侧设置有第四环状突起。 此外，磁控溅射阴极包括在非溅射表面侧具有与第一磁体的极性不同的第一磁体和第二磁体6。

公开(公告)号：US08999121B2

公开(公告)日：2015-04-07

申请号：US13116492

申请日：2011-05-26

申请人： Kyosuke Sugi ,  Tetsuya Endo ,  Einstein Noel Abarra

发明人： Kyosuke Sugi ,  Tetsuya Endo ,  Einstein Noel Abarra

IPC分类号： C23C14/34 ,  C23C14/22 ,  C23C14/50 ,  H01J37/32 ,  H01J37/34

CPC分类号： C23C14/225 ,  C23C14/34 ,  C23C14/345 ,  C23C14/505 ,  H01J37/32568 ,  H01J37/34

摘要： The present invention provides a sputtering apparatus and a film-forming method capable of forming a magnetic film having a reduced variation in the orientation of the magnetic anisotropy. The sputtering apparatus of the present invention is equipped with a rotatable cathode and a rotatable stage. The stage can have an electrostatic chuck. Moreover, the stage may electrically be connected with a bias power source capable of applying a bias voltage to the stage. Furthermore, the stage may have the electrostatic chuck and electrically be connected with the bias power source.

摘要翻译： 本发明提供一种能够形成具有降低的磁各向异性取向变化的磁性膜的溅射装置和成膜方法。 本发明的溅射装置装备有可旋转阴极和可旋转台。 舞台上可以有一个静电吸盘。 此外，该级可以与能够向该级施加偏置电压的偏置电源电连接。 此外，该台可以具有静电卡盘并与偏置电源电连接。

公开(公告)号：US08507113B2

公开(公告)日：2013-08-13

申请号：US13319209

申请日：2010-05-28

申请人： Einstein Noel Abarra ,  Tetsuya Endo

发明人： Einstein Noel Abarra ,  Tetsuya Endo

IPC分类号： H01L43/08 ,  G01R33/09 ,  H01F10/16

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/09 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3909 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/16 ,  H01F10/32 ,  H01L43/12 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/1143 ,  Y10T428/1171

摘要： The present invention is directed to align crystal c-axes in magnetic layers near two opposed junction wall surfaces of a magnetoresistive element so as to be almost perpendicular to the junction wall surfaces. A magnetic sensor stack body has, on sides of opposed junction wall surfaces of a magnetoresistive element, field regions for applying a bias magnetic field to the element. The field region has first and second magnetic layers having magnetic particles having crystal c-axes, the first magnetic layer is disposed adjacent to the junction wall surface in the field region, the crystal c-axes in the first magnetic layer are aligned and oriented along an ABS in a film plane, the second magnetic layer is disposed adjacent to the first magnetic layer in the field region, and the crystal c-axis directions in the second magnetic layer are distributed at random in a plane.

摘要翻译： 本发明涉及在磁阻元件的两个相对的接合壁表面附近的磁性层中对准晶体c轴，以便几乎垂直于接合壁表面。 磁传感器堆叠体在磁阻元件的相对的接合壁表面的侧面上具有用于向元件施加偏置磁场的场区域。 场区具有第一和第二磁性层，具有具有晶体c轴的磁性颗粒，第一磁性层与场区域中的接合壁表面相邻地设置，第一磁性层中的晶体c轴对准并定向 在膜平面中的ABS，第二磁性层与场区域中的第一磁性层相邻地设置，并且第二磁性层中的晶体c轴方向在平面内随机分布。