发明申请
- 专利标题： SPUTTERING APPARATUS AND FILM FORMING METHOD
- 专利标题（中）： 溅射装置和薄膜成型方法
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申请号： US12620654申请日： 2009-11-18
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公开(公告)号： US20100155227A1公开(公告)日： 2010-06-24
- 发明人: Tetsuya Endo , Einstein Noel Abarra
- 申请人： Tetsuya Endo , Einstein Noel Abarra
- 申请人地址： JP Kawasaki-shi
- 专利权人： CANON ANELVA CORPORATION
- 当前专利权人： CANON ANELVA CORPORATION
- 当前专利权人地址： JP Kawasaki-shi
- 主分类号： C23C14/54
- IPC分类号： C23C14/54 ; C23C14/50
摘要：
The present invention provides a sputtering apparatus and a film forming method that can form a high quality film in a groove having a sloping wall such as a V-groove. The sputtering apparatus of the present invention includes a rotatable cathode (102), a rotatable stage (101), and a rotatable shield plate (105). The sputtering apparatus controls rotation of at least one of the cathode (102), the stage (101), and the shield plate (105) so that sputtering particles are incident on the V-groove formed in a substrate (104) at an angle of 50° or less with respect to a normal to a sloping wall of the V-groove.
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