公开(公告)号：US4392938A

公开(公告)日：1983-07-12

申请号：US320385

申请日：1981-11-12

Applicant: David J. Harra ,  Frederick T. Turner

Inventor： David J. Harra ,  Frederick T. Turner

IPC: H01L21/302 ,  C23F4/00 ,  H01J37/32 ,  H01J37/34 ,  H01L21/3065 ,  C23C15/00

CPC classification number: H01J37/32623 ,  C23F4/00 ,  H01J37/32697 ,  H01J37/34

Abstract: An RF etch table has a biased extension member positioned adjacent its periphery. The extension member is electrically conductive, but is insulated from other conductive members in the system. The extension member is positioned with respect to the periphery of the table in a manner such that the boundary of the plasma induced above the etch table is continued beyond the periphery of the etch table, thereby eliminating the focusing of ions onto the edges of an item being etched on the table. The potential impressed upon the extension member produces a dark space above its surface having a sufficient height so that the horizontal configuration of the sheath above the etch table is continued beyond its edges. More uniform etching is accomplished.

Abstract translation: RF蚀刻台具有邻近其周边定位的偏置的延伸构件。 延伸构件是导电的，但是与系统中的其它导电构件绝缘。 延伸构件相对于工作台的周边以这样的方式定位，使得在蚀刻台上方引起的等离子体的界面延续超过蚀刻台的周边，从而消除了离子聚焦到物品的边缘上 被刻在桌子上。 在延伸构件上施加的电势在其表面上产生具有足够高度的暗空间，使得蚀刻台上方的护套的水平构型延续超过其边缘。 实现更均匀的蚀刻。

公开(公告)号：US4436602A

公开(公告)日：1984-03-13

申请号：US524708

申请日：1983-08-19

Applicant: David J. Harra ,  Frederick T. Turner ,  Martin A. Hutchinson

Inventor： David J. Harra ,  Frederick T. Turner ,  Martin A. Hutchinson

IPC: C23C14/04 ,  H01J37/34 ,  C23C15/00

CPC classification number: H01J37/34 ,  C23C14/044

Abstract: A method of sputter depositing a desired film thickness profile on a substrate is accomplished by depositing material onto a substrate at spaced apart coating stations whereby a substrate at any of said stations is not coated by the sputter coating action at any of the other sputter stations. The substrate is held stationary during complete sputtering at each station. A blocking shield is placed in fixed position between the substrate and the sputter coating source at one or more of the stations. The duration of sputter coating time at one station may be different than at another station.

Abstract translation: 在衬底上溅射沉积期望的膜厚度轮廓的方法是通过在间隔的涂覆工位上将材料沉积到衬底上来实现的，由此任何所述工位的衬底在任何其它溅射站处的溅射涂覆作用没有被涂覆。 在每个站的完全溅射期间，基板保持静止。 在一个或多个站处将阻挡屏蔽物放置在基板和溅射涂覆源之间的固定位置。 在一个站的溅射涂覆时间的持续时间可能不同于另一个站。

公开(公告)号：US4416759A

公开(公告)日：1983-11-22

申请号：US325588

申请日：1981-11-27

Applicant: David J. Harra ,  Frederick T. Turner ,  Martin A. Hutchinson

Inventor： David J. Harra ,  Frederick T. Turner ,  Martin A. Hutchinson

IPC: C23C14/34 ,  C23C14/04 ,  H01J37/34 ,  C23C15/00

CPC classification number: H01J37/34 ,  C23C14/044

Abstract: The arbitrary contouring of thickness of a sputter-deposited film is made possible by a blocking means having a primary blocking shield and an ancillary blocking shield. The primary blocking shield intercepts atoms sputtered directly from the cathode target by line-of-sight transport. The ancillary blocking shield extends downwardly from the side of the primary blocking shield which is placed closest to the substrate. The ancillary blocking shield intercepts atoms sputtered from the cathode which by intervening gas collisions have been redirected to travel underneath the primary blocking shield. Precise tailoring of the thickness profile of the coating on the substrate is thereby provided and the quality of the composite film is maintained. The method for contouring the thickness of sputter coated layers comprises sputter coating portions of the film at successive stations. By employing the improved blocking shield at selected stations, the film in the aggregate may have the desired thickness contour.

Abstract translation: 通过具有主阻挡屏蔽和辅助阻挡屏蔽的阻挡装置使溅射沉积膜的厚度的任意轮廓化成为可能。 主阻挡屏蔽通过视线传输直接从阴极靶溅射的原子。 辅助阻挡屏蔽从最靠近基板放置的主阻挡屏蔽的侧面向下延伸。 辅助阻挡屏蔽物拦截从阴极溅射的原子，通过介入气体碰撞已被重定向到主阻挡屏蔽下方。 由此提供了基板上涂层厚度分布的精确裁剪，并且保持了复合膜的质量。 用于轮廓化溅射涂覆层的厚度的方法包括在连续的站处溅射涂覆膜的部分。 通过在所选择的站点采用改进的阻挡屏蔽，聚集体中的膜可以具有期望的厚度轮廓。

公开(公告)号：US5314597A

公开(公告)日：1994-05-24

申请号：US855988

申请日：1992-03-20

Applicant: David J. Harra

Inventor： David J. Harra

IPC: C23C14/35 ,  H01J37/34 ,  H01L21/203 ,  H01L21/285 ,  C23C14/34

CPC classification number: H01J37/347 ,  C23C14/35 ,  H01J37/3408 ,  H01J37/3455

Abstract: A rotatable magnet configuration for use in a magnetron sputtering system for obtaining a desired sputter target erosion profile and for obtaining a sputtered film on a substrate having a desired film characteristic, such as uniformity of thickness, and a method of designing such a magnet configuration are disclosed. The disclosed design and method compensate for the discrepancy between the between the actual position of the magnet and the "effective" position of the magnet as measured by a static erosion profile obtained holding the magnet stationary. The method shown describes how to adjust the actual shape of the magnet to obtain a desired effective shape that will produce a predetermined erosion profile in the sputter target. In addition, the disclosure describes how to determine an optimal erosion profile to produce a sputtered film having a desired characteristic.

Abstract translation: 用于获得期望的溅射靶侵蚀曲线的磁控溅射系统中的可旋转磁体配置以及用于获得具有期望的膜特性（如厚度均匀性）的基板上的溅射膜以及设计这种磁体构造的方法的方法是： 披露 所公开的设计和方法补偿了磁体的实际位置与磁体的“有效”位置之间的差异，该位置是通过保持磁体静止的静态侵蚀曲线来测量的。 所示的方法描述了如何调整磁体的实际形状以获得期望的有效形状，其将在溅射靶中产生预定的侵蚀曲线。 此外，本公开描述了如何确定最佳侵蚀曲线以产生具有期望特性的溅射膜。

公开(公告)号：US4714536A

公开(公告)日：1987-12-22

申请号：US32916

申请日：1987-03-31

Applicant: Kenneth F. Freeman ,  Charles B. Garrett ,  David J. Harra ,  Lawrence C. Lei

Inventor： Kenneth F. Freeman ,  Charles B. Garrett ,  David J. Harra ,  Lawrence C. Lei

IPC: H01J37/34 ,  C23C14/34

CPC classification number: H01J37/3455 ,  H01J37/3408

Abstract: A planar magnetron sputtering device has an extended flat circular target source in opposed spaced parallel relationship with a generally flat article to be coated, placed within an evacuated coating chamber. Crossed electric and magnetic fields in the chamber are established in order to set up a plasma adjacent the target. The magnetic field is provided by a magnetic assembly of permanent magnets on the non-vacuum side of the target. The magnetic assembly is smaller in diameter than the target, but is mounted to a means for moving the assembly laterally over the entire area of the target. This means for moving sweeps the magnetic assembly in an eccentric path generally centered on the target center, with the path being non-reentrant and precessing about the target center with time. In this manner, the path sweeps different areas on successive rotations about the center, and a given area of target is exposed to the magnetic field at many successively different orientations. Articles are therefore coated with significantly improved uniformity and step coverage, while utilization of target material is improved.

Abstract translation: 平面磁控管溅射装置具有延伸的平坦的圆形目标源，与待涂覆的大体平坦的制品相对间隔开并置放置在抽空的涂覆室内。 建立室内的交叉电场和磁场，以便在靶附近建立等离子体。 磁场由目标的非真空侧上的永磁体的磁性组件提供。 磁性组件的直径小于目标，但是安装到用于在组件的整个区域上横向移动组件的装置。 这意味着用于移动将磁性组件扫过通常以目标中心为中心的偏心路径，其中路径不可重入，并随着时间而绕目标中心进入。 以这种方式，路径在围绕中心的连续旋转上扫描不同的区域，并且给定的目标区域以许多连续不同的取向暴露于磁场。 因此，制品在显着改善的均匀性和阶梯覆盖层上涂覆，同时改善了目标材料的利用。

公开(公告)号：US4392932A

公开(公告)日：1983-07-12

申请号：US320386

申请日：1981-11-12

Applicant: David J. Harra

Inventor： David J. Harra

IPC: C23F4/00 ,  H01J37/32 ,  H01J37/34 ,  C23C15/00 ,  C23F1/00

CPC classification number: H01J37/32623 ,  C23F4/00 ,  H01J37/32706 ,  H01J37/34

Abstract: A method for etching a semiconductor wafer on an RF etch table employs a succession of different biases on an extension member positioned adjacent the periphery of the table. The extension member is electrically conductive, but is insulated from the etch table. The extension member is positioned with respect to the periphery of the table in a manner such that the plasma sheath induced above the etch table is continued beyond the periphery of the table, thereby eliminating the focusing of ions on the edges of an item being etched on the table. As different bias voltages are applied to the extension member, different etch profiles are experienced on the semiconductor wafer. The aggregation of etch profiles produces a more uniform overall etch.

Abstract translation: 用于在RF蚀刻台上蚀刻半导体晶片的方法在邻近台周边的延伸部件上采用一系列不同的偏压。 延伸部件是导电的，但与蚀刻台绝缘。 延伸构件相对于工作台的周边以这样的方式定位，使得在蚀刻台上方感应的等离子体护套继续超过工作台的周边，从而消除了被蚀刻物品的边缘上的离子聚焦 桌子。 随着不同的偏置电压被施加到延伸构件，在半导体晶片上经历不同的蚀刻轮廓。 蚀刻轮廓的聚集产生更均匀的总体蚀刻。

公开(公告)号：US4303251A

公开(公告)日：1981-12-01

申请号：US170233

申请日：1980-07-18

Applicant: David J. Harra ,  William C. Nystrom

Inventor： David J. Harra ,  William C. Nystrom

IPC: F16J15/08 ,  F16L19/02 ,  F16L19/025 ,  F16L23/02 ,  F16L23/20

CPC classification number: F16J15/0881 ,  F16L19/0218 ,  F16L19/025 ,  F16L23/02 ,  F16L23/20

Abstract: An all-metal joint is provided wherein a metal gasket disposed between mating flanges can readily be removed when the joint is disassembled. Opposing faces of the mating flanges are configured to provide a recess between the flanges in which a soft metal gasket of annular configuration can be received when the flanges are coupled together. Symmetrically disposed ridges on the opposing flange faces penetrate into a peripheral region of the gasket, thereby causing a portion of the gasket material to flow into an annular groove that forms the periphery of the recess between the opposing flange faces. This compressed material in the annular groove provides a gas-tight seal between the mating flanges. The configuration of the opposing flange faces is such that when the joint is dissassembled, the net force tending to retain the gasket in position against either one of the flange faces is minimized. In particular, each flange face is configured so that the residual compressive forces present when the flange coupling mechanism is released, distributed over the surface of the gasket, are in net effect substantially equal to or greater than the frictional and bonding forces that might tend to retain the gasket in contact with either flange. In this way, the gasket tends to break away from the mating flange faces when the joint is disassembled.

Abstract translation: 提供一种全金属接头，其中设置在配合凸缘之间的金属垫圈可以在拆卸接头时容易地移除。 配合凸缘的相对面被构造成在凸缘之间提供凹槽，当凸缘联接在一起时，凸缘中可以容纳环形结构的软金属垫圈。 相对的法兰面上的相对设置的隆起部分渗透到垫圈的周边区域中，从而导致垫圈材料的一部分流入形成相对的凸缘面之间的凹槽周边的环形槽。 环形槽中的这种压缩材料在配合凸缘之间提供气密密封。 相对的凸缘面的构造使得当接头被分解时，趋于将垫圈保持在相对于任一个凸缘面的位置的净力被最小化。 特别地，每个凸缘面被构造成使得当法兰联接机构被释放并分布在垫圈的表面上时存在的残余压缩力基本上等于或大于可能倾向于的摩擦和粘合力 保持垫圈与两个法兰接触。 以这种方式，当接头拆卸时，垫圈倾向于从配合的凸缘面脱离。

公开(公告)号：US5985115A

公开(公告)日：1999-11-16

申请号：US832718

申请日：1997-04-11

Applicant: Larry D. Hartsough ,  David J. Harra ,  Ronald R. Cochran ,  Mingwei Jiang

Inventor： Larry D. Hartsough ,  David J. Harra ,  Ronald R. Cochran ,  Mingwei Jiang

IPC: H01J37/34 ,  C23C14/34

CPC classification number: H01J37/3497 ,  H01J37/3408 ,  H01J37/3455

Abstract: An internally cooled target assembly for use in a magnetron sputtering apparatus is provided. The internally cooled target assembly includes a cooling plate that is configured to promote highly turbulent coolant flow through the target assembly to achieve efficient and uniform target cooling. The volume of coolant required to cool the target assembly is minimized.

Abstract translation: 提供一种用于磁控溅射装置的内部冷却的目标组件。 内部冷却的目标组件包括冷却板，该冷却板构造成促进高度紊流的冷却剂流过目标组件以实现有效和均匀的目标冷却。 冷却目标组件所需的冷却剂体积最小化。

公开(公告)号：US5417833A

公开(公告)日：1995-05-23

申请号：US47599

申请日：1993-04-14

Applicant: David J. Harra ,  Larry D. Hartsough

Inventor： David J. Harra ,  Larry D. Hartsough

IPC: C23C14/35 ,  H01J37/34 ,  H01L21/203

CPC classification number: H01J37/3455 ,  H01J37/3408 ,  H01J37/3458

Abstract: A magnetron sputter apparatus is disclosed which includes a rotatable generally heart-shaped, closed-loop magnet array behind the target and in front of a pair of separately driven stationary electromagnets. The apparatus is optimized to produce a sputtered film on a planar substrate having desired film characteristics such as uniformity of thickness, good step coverage, and good via filling and efficient utilization of the target. The shape of the generally heart-shaped array includes a flattened tip forming an arc of a circle centered on the axis of rotation and concave cusps in the lobes of the heart-shape. The electromagnets are used to increase target utilization at its center and to compensate for the change in shape of the target and distance from the target to the substrate with depletion.

Abstract translation: 公开了一种磁控溅射装置，其包括在目标之后和在一对单独驱动的固定电磁体之前的可旋转的大致心形的闭环磁体阵列。 该装置被优化以在平面基板上产生溅射膜，其具有期望的膜特性，例如厚度均匀性，良好的台阶覆盖率以及良好的通孔填充和靶的有效利用。 一般心形阵列的形状包括一个平坦的尖端，其形成以心形的叶片的旋转轴线为中心的圆弧和凹形尖角。 电磁铁用于在其中心增加目标利用率，并补偿目标的形状变化以及从目标到基板的耗尽的距离。

公开(公告)号：US4512391A

公开(公告)日：1985-04-23

申请号：US343794

申请日：1982-01-29

Applicant: David J. Harra

Inventor： David J. Harra

IPC: B01J3/00 ,  C30B25/10 ,  C30B25/12 ,  C30B31/14 ,  H01L21/265 ,  H01L21/302 ,  H01L21/3065 ,  F28F7/00 ,  F28D15/00

CPC classification number: C30B25/12 ,  C30B25/10 ,  C30B31/14

Abstract: An apparatus for the uniform thermal treatment of semiconductor wafers by gas conduction holds the wafer in place over a gas filled cavity in opposition to a thermal mass maintained at an appropriate temperature. Gas is introduced behind the semiconductor wafer adjacent its periphery to produce a near-constant gas pressure across the backside of the wafer. The constant pressure produces constant thermal conductivity. Consequently, heat conduction is uniform, the temperature of the wafer is uniform and uniform processing is accomplished across the wafer.

Abstract translation: 用于通过气体传导对半导体晶片进行均匀热处理的装置将晶片保持在保持在适当温度的热质量的气体填充腔上的适当位置。 在半导体晶片的周边附近引入气体，以在晶片背面产生接近恒定的气体压力。 恒压产生恒定的热导率。 因此，热传导是均匀的，晶片的温度是均匀的，并且在整个晶片上实现均匀的处理。