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23 条记录 (耗时 0.018 秒)

    Detecting the endpoint of a cleaning process
    2.
    发明申请
    Detecting the endpoint of a cleaning process 审中-公开
    检测清洁过程的终点

    公开(公告)号：US20080047579A1

    公开(公告)日：2008-02-28

    申请号：US11510190

    申请日：2006-08-25

    申请人： Bing Ji ,  Stephen Andrew Motika ,  Dingjun Wu ,  Eugene Joseph Karwacki

    发明人： Bing Ji ,  Stephen Andrew Motika ,  Dingjun Wu ,  Eugene Joseph Karwacki

    IPC分类号： B08B6/00 ,  B08B7/04

    CPC分类号： B08B7/0035 ,  H01J37/32935 ,  H01J37/32963

    摘要： A method for determining the endpoint of a cleaning process in which a metallic residue is removed from an underlying surface which comprises a metal by contacting the residue with a cleaning agent which volatilizes the residue and which tends to attack the metal of the underlying surface and volatilizes it if the cleaning process is not terminated timely, and in which the metal comprising the underlying surface is more reactive with the cleaning agent than the metal of the metallic residue, the improvement which comprises terminating the cleaning process at a time when the ratio of the amount of volatilized metal to the amount of cleaning agent increases from a lower to a higher value.

    摘要翻译： 一种确定清洁方法的终点的方法，其中金属残留物从下面​​的表面除去，该金属残留物通过使残留物与残留物挥发并且易于侵蚀下面的表面的金属并使其挥发的清洁剂接触， 如果清洁过程没有及时终止，并且其中包含下面的表面的金属与金属残余物的金属比清洁剂更有反应性，其改进包括在第 挥发性金属的量与清洁剂的量从较低值增加到较高值。

    Removal of transition metal ternary and/or quaternary barrier materials from a substrate
    4.
    发明申请
    Removal of transition metal ternary and/or quaternary barrier materials from a substrate 失效
    从基底去除过渡金属三元和/或四元阻挡材料

    公开(公告)号：US20050112901A1

    公开(公告)日：2005-05-26

    申请号：US10942301

    申请日：2004-09-15

    申请人： Bing Ji ,  Martin Plishka ,  Dingjun Wu ,  Peter Badowski ,  Eugene Karwacki

    发明人： Bing Ji ,  Martin Plishka ,  Dingjun Wu ,  Peter Badowski ,  Eugene Karwacki

    IPC分类号： C23C16/44 ,  C23G5/00 ,  H01L21/302 ,  H01L21/3213 ,  H01L21/44 ,  H01L21/461

    CPC分类号： H01L21/32135 ,  C23C16/4405 ,  C23G5/00 ,  H01L21/32136 ,  Y10S438/905

    摘要： A process for the selective removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance from a substrate comprising: providing the substrate having the substance deposited thereupon wherein the substance comprises a transition metal ternary compound, a transition metal quaternary compound, and combinations thereof; reacting the substance with a process gas comprising a fluorine-containing gas and optionally an additive gas to form a volatile product; and removing the volatile product from the substrate to thereby remove the substance from the substrate.

    摘要翻译： 本文公开了用于选择性地从衬底中去除蚀刻和/或清洁应用的物质的方法。 在一个实施方案中，提供了从基材中除去物质的方法，包括：提供具有沉积在其上的物质的基材，其中所述物质包含过渡金属三元化合物，过渡金属季铵化合物及其组合; 使物质与包含含氟气体和任选的添加气体的工艺气体反应以形成挥发性产物; 并从基材中除去挥发性产物，从而从基材中除去物质。

    Process for titanium nitride removal
    7.
    发明申请
    Process for titanium nitride removal 审中-公开
    氮化钛去除工艺

    公开(公告)号：US20060016783A1

    公开(公告)日：2006-01-26

    申请号：US10896588

    申请日：2004-07-22

    申请人： Dingjun Wu ,  Bing Ji ,  Eugene Karwacki

    发明人： Dingjun Wu ,  Bing Ji ,  Eugene Karwacki

    IPC分类号： C23F1/00 ,  H01L21/306

    CPC分类号： C23G5/00 ,  C23C16/4405 ,  H01L21/32135 ,  H01L21/32136

    摘要： A process of removing titanium nitride from a surface of a substrate includes: providing a process gas including at least one reactant selected from the group consisting of a fluorine-containing substance and a chlorine-containing substance; enriching the process gas with at least one reactive species of the at least one reactant to form an enriched process gas, wherein the enriching is conducted at a first location; providing the substrate at a substrate temperature greater than 50° C., wherein the surface of the substrate is at least partially coated with the titanium nitride; and contacting the titanium nitride on the surface of the substrate with the enriched process gas to volatilize and remove the titanium nitride from the surface of the substrate, wherein the contacting occurs at a second location differing from the first location.

    摘要翻译： 从衬底表面除去氮化钛的方法包括：提供包含至少一种选自含氟物质和含氯物质的反应物的工艺气体; 用所述至少一种反应物的至少一种反应性物质富集工艺气体以形成富集的工艺气体，其中所述富集在第一位置进行; 在大于50℃的衬底温度下提供衬底，其中衬底的表面至少部分地涂覆有氮化钛; 以及使所述基底表面上的所述氮化钛与所述富集的工艺气体接触，以从所述衬底的表面挥发和去除所述氮化钛，其中所述接触发生在与所述第一位置不同的第二位置处。

    Method for cleaning deposition chambers for high dielectric constant materials
    8.
    发明申请
    Method for cleaning deposition chambers for high dielectric constant materials 失效
    清洁高介电常数材料沉积室的方法

    公开(公告)号：US20050108892A1

    公开(公告)日：2005-05-26

    申请号：US10721719

    申请日：2003-11-25

    申请人： Dingjun Wu ,  Bing Ji ,  Stephen Motike ,  Eugene Karwacki

    发明人： Dingjun Wu ,  Bing Ji ,  Stephen Motike ,  Eugene Karwacki

    IPC分类号： H01L21/304 ,  C23C16/44 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/316 ,  F26B3/00 ,  B08B3/12

    CPC分类号： C23C16/4405

    摘要： A method for dry etching and chamber cleaning high dielectric constant materials is disclosed herein. In one aspect of the present invention, there is provided a process for cleaning a substance comprising a dielectric constant greater than the dielectric constant of silicon dioxide from at least a portion of a surface of a reactor comprising: introducing a first gas mixture comprising a boron-containing reactive agent into the reactor wherein the first gas mixture reacts with the substance contained therein to provide a volatile product and a boron-containing by-product; introducing a second gas mixture comprising a fluorine-containing reactive agent into the reactor wherein the second gas mixture reacts with the boron-containing by-product contained therein to form the volatile product; and removing the volatile product from the reactor.

    摘要翻译： 本文公开了一种用于干蚀刻和室清洁的高介电常数材料的方法。 在本发明的一个方面，提供了一种清洁物质的方法，该方法包括介电常数大于来自反应器表面的至少一部分的二氧化硅的介电常数，包括：引入包含硼的第一气体混合物 其中第一气体混合物与其中所含的物质反应以提供挥发性产物和含硼副产物; 将包含含氟反应剂的第二气体混合物引入反应器中，其中第二气体混合物与其中所含的含硼副产物反应形成挥发性产物; 并从反应器中除去挥发性产物。

    Adsorbent for moisture removal from fluorine-containing fluids
    9.
    发明授权
    Adsorbent for moisture removal from fluorine-containing fluids 有权
    用于从含氟流体中除湿的吸附剂

    公开(公告)号：US06709487B1

    公开(公告)日：2004-03-23

    申请号：US10278131

    申请日：2002-10-22

    申请人： Chun Christine Dong ,  Madhukar Bhaskara Rao ,  Dingjun Wu

    发明人： Chun Christine Dong ,  Madhukar Bhaskara Rao ,  Dingjun Wu

    IPC分类号： B01D5304

    CPC分类号： B01D53/261 ,  B01D53/28 ,  Y10S95/90

    摘要： An adsorbent, method, and apparatus involving same for the removal of moisture from a fluoride-containing fluid such as gaseous nitrogen trifluoride are disclosed herein. In certain preferred embodiments, the adsorbent of the present invention comprises an organic support having a porosity of 30% or greater and a pore size of 2 &mgr;m or less; and at least one metal fluoride disposed within at least a portion of the organic substrate.

    摘要翻译： 本文公开了一种用于从含氟化物的流体例如气态三氟化氮中除去水分的吸附剂，方法和装置。 在某些优选的实施方式中，本发明的吸附剂包含孔隙率为30％以上，孔径为2μm以下的有机载体， 以及至少一种配置在有机基材的至少一部分内的金属氟化物。

    Selective Etching and Formation of Xenon Difluoride
    10.
    发明申请
    Selective Etching and Formation of Xenon Difluoride 有权
    氙氟化物的选择性蚀刻和形成

    公开(公告)号：US20100022095A1

    公开(公告)日：2010-01-28

    申请号：US12360588

    申请日：2009-01-27

    申请人： Dingjun Wu ,  Eugene Joseph Karwacki, JR. ,  Anupama Mallikarjunan ,  Andrew David Johnson

    发明人： Dingjun Wu ,  Eugene Joseph Karwacki, JR. ,  Anupama Mallikarjunan ,  Andrew David Johnson

    IPC分类号： H01L21/3065 ,  H01L21/302 ,  H01L21/306 ,  C01B23/00

    CPC分类号： B08B7/0035 ,  C23C16/4405 ,  C23F4/00 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/67028

    摘要： This invention relates to a process for selective removal of materials, such as: silicon, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, tantalum, niobium, boron, phosphorus, germanium, arsenic, and mixtures thereof, from silicon dioxide, silicon nitride, nickel, aluminum, TiNi alloy, photoresist, phosphosilicate glass, boron phosphosilicate glass, polyimides, gold, copper, platinum, chromium, aluminum oxide, silicon carbide and mixtures thereof. The process is related to the important applications in the cleaning or etching process for semiconductor deposition chambers and semiconductor tools, devices in a micro electro mechanical system (MEMS), and ion implantation systems. Methods of forming XeF2 by reacting Xe with a fluorine containing chemical are also provided, where the fluorine containing chemical is selected from the group consisting of F2, NF3, C2F6, CF4, C3F8, SF6, a plasma containing F atoms generated from an upstream plasma generator and mixtures thereof.

    摘要翻译： 本发明涉及从二氧化硅，硅，硅，钼，钨，钨，钛，锆，铪，钒，钽，铌，硼，磷，锗，砷及其混合物中选择性地去除材料的方法 氮化物，镍，铝，TiNi合金，光致抗蚀剂，磷硅酸盐玻璃，硼磷硅酸盐玻璃，聚酰亚胺，金，铜，铂，铬，氧化铝，碳化硅及其混合物。 该过程涉及用于半导体沉积室和半导体工具，微机电系统（MEMS）中的器件和离子注入系统的清洁或蚀刻工艺中的重要应用。 还提供了通过使Xe与含氟化合物反应形成XeF 2的方法，其中含氟化学物质选自由F2，NF3，C2F6，CF4，C3F8，SF6组成的组，含有从上游等离子体产生的F原子的等离子体 发电机及其混合物。