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    Process stability of NBDE using substituted phenol stabilizers
    4.
    发明授权
    Process stability of NBDE using substituted phenol stabilizers 有权
    使用取代苯酚稳定剂的NBDE工艺稳定性

    公开(公告)号：US08173213B2

    公开(公告)日：2012-05-08

    申请号：US12470002

    申请日：2009-05-21

    申请人： Steven Gerard Mayorga ,  Mary Kathryn Haas ,  Mark Leonard O'Neill ,  Dino Sinatore

    发明人： Steven Gerard Mayorga ,  Mary Kathryn Haas ,  Mark Leonard O'Neill ,  Dino Sinatore

    IPC分类号： C09K15/08 ,  C10L1/183 ,  C23C16/40 ,  H01L21/00

    CPC分类号： C07C7/20 ,  C07C13/64 ,  C07C39/06 ,  C07C13/00 ,  C07C15/00

    摘要： A stabilized cyclic alkene composition comprising one or more cyclic alkenes, and at least one stabilizer compound having the Formula (I), R1,R2,R3,R4,R5(C6)OH  Formula (I) wherein R′ through R5 can each independently be H, OH, C1-C8 linear, branched, or cyclic alkyl, C1-C8 linear, branched, or cyclic alkoxy or substituted or unsubstituted aryl, and wherein the stabilizer compound is present in an amount greater than 200 ppm up to 20,000 ppm and has a boiling point lower than 265° C. A method for forming a layer of carbon-doped silicon oxide on a substrate, which uses the stabilized alkene composition and a silicon containing compound.

    摘要翻译： 包含一种或多种环状烯烃的稳定化环烯烃组合物和至少一种具有式（I），R 1，R 2，R 3，R 4，R 5（C 6）OH式（I）的稳定剂化合物，其中R'至R 5可各自独立地 是H，OH，C1-C8直链，支链或环状烷基，C1-C8直链，支链或环状烷氧基或取代或未取代的芳基，其中稳定剂化合物的存在量大于200ppm至高达20,000ppm 并且具有低于265℃的沸点。使用稳定的烯烃组合物和含硅化合物在基材上形成碳掺杂氧化硅层的方法。

    Mechanical enhancer additives for low dielectric films
    5.
    发明授权
    Mechanical enhancer additives for low dielectric films 有权
    用于低介电膜的机械增强剂添加剂

    公开(公告)号：US08137764B2

    公开(公告)日：2012-03-20

    申请号：US10842503

    申请日：2004-05-11

    申请人： Jean Louise Vincent ,  Mark Leonard O'Neill ,  Raymond Nicholas Vrtis ,  Aaron Scott Lukas ,  Brian Keith Peterson ,  Mark Daniel Bitner

    发明人： Jean Louise Vincent ,  Mark Leonard O'Neill ,  Raymond Nicholas Vrtis ,  Aaron Scott Lukas ,  Brian Keith Peterson ,  Mark Daniel Bitner

    IPC分类号： C23C10/06 ,  C23C16/24

    CPC分类号： C03C11/00 ,  C03C3/045 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31633 ,  H01L21/31695 ,  Y10T428/31663

    摘要： A chemical vapor deposition process for preparing a low dielectric constant organosilicate (OSG) having enhanced mechanical properties by adjusting the amount of organic groups, such as methyl groups, within the mixture is disclosed herein. In one embodiment of the present invention, the OSG film is deposited from a mixture comprising a first silicon-containing precursor that comprises from 3 to 4 Si—O bonds per Si atom, from 0 to 1 of bonds selected from the group consisting of Si—H, Si—Br, and Si—Cl bonds per Si atom and no Si—C bonds and a second silicon-containing precursor that comprises at least one Si—C bond per Si atom. In another embodiment of the present invention, the OSG film is deposited from a mixture comprising an asymmetric silicon-containing precursor. In either embodiment, the mixture may further contain a porogen precursor to provide a porous OSG film.

    摘要翻译： 本文公开了一种通过调节混合物内的有机基团如甲基的量来制备具有增强的机械性能的低介电常数有机硅酸盐（OSG）的化学气相沉积方法。 在本发明的一个实施方案中，OSG膜由包含第一含硅前体的混合物沉积，该第一含硅前体包含每Si原子3至4个Si-O键，0至1个选自Si -H，Si-Br和Si-Cl键，并且不具有Si-C键，并且每个Si原子包含至少一个Si-C键的第二含硅前体。 在本发明的另一个实施方案中，OSG膜由包含不对称含硅前体的混合物沉积。 在任一实施方案中，混合物还可含有孔原体前体以提供多孔OSG膜。

    LOW-IMPURITY ORGANOSILICON PRODUCT AS PRECURSOR FOR CVD
    6.
    发明申请
    LOW-IMPURITY ORGANOSILICON PRODUCT AS PRECURSOR FOR CVD 有权
    低成本有机硅产品作为CVD的前身

    公开(公告)号：US20110295033A1

    公开(公告)日：2011-12-01

    申请号：US13205015

    申请日：2011-08-08

    申请人： Steven Gerard Mayorga ,  Mark Leonard O'Neill ,  Kelly A. Chandler

    发明人： Steven Gerard Mayorga ,  Mark Leonard O'Neill ,  Kelly A. Chandler

    IPC分类号： C07F7/02

    CPC分类号： C07F7/20 ,  C07F7/1804

    摘要： The present invention provides an organosilicon composition comprising diethoxymethylsilane, a concentration of dissolved residual chloride, and a concentration of dissolved residual chloride scavenger that does not yield unwanted chloride salt precipitate when combined with another composition comprising diethoxymethylsilane.

    摘要翻译： 本发明提供一种包含二乙氧基甲基硅烷的有机硅组合物，溶解的残留氯化物的浓度以及溶解的残余氯化物清除剂的浓度，当与包含二乙氧基甲基硅烷的另一种组合物组合时，其不产生不需要的氯化物盐沉淀物。

    Dielectric Films Comprising Silicon And Methods For Making Same
    8.
    发明申请
    Dielectric Films Comprising Silicon And Methods For Making Same 有权
    包含硅的介质膜和制造相同的方法

    公开(公告)号：US20100233886A1

    公开(公告)日：2010-09-16

    申请号：US12717572

    申请日：2010-03-04

    申请人： Liu Yang ,  Manchao Xiao ,  Kirk Scott Cuthill ,  Bing Han ,  Mark Leonard O'Neill

    发明人： Liu Yang ,  Manchao Xiao ,  Kirk Scott Cuthill ,  Bing Han ,  Mark Leonard O'Neill

    IPC分类号： H01L21/316

    CPC分类号： H01L21/02164 ,  C23C16/30 ,  C23C16/308 ,  C23C16/401 ,  H01L21/0228

    摘要： Described herein are methods of forming dielectric films comprising silicon, such as, but not limited to, silicon oxide, silicon oxycarbide, silicon carbide, and combinations thereof, that exhibit at least one of the following characteristics: low wet etch resistance, a dielectric constant of 6.0 or below, and/or can withstand a high temperature rapid thermal anneal process. Also disclosed herein are the methods to form dielectric films or coatings on an object to be processed, such as, for example, a semiconductor wafer.

    摘要翻译： 这里描述的是形成包括硅的介电膜的方法，所述介电膜包括硅，例如但不限于氧化硅，碳氧化硅，碳化硅及其组合，其表现出以下特征中的至少一个：低湿蚀刻电阻，介电常数 为6.0或更低，和/或可承受高温快速热退火工艺。 本文还公开了在待加工物体上形成介电膜或涂层的方法，例如半导体晶片。

    Process For Restoring Dielectric Properties
    9.
    发明申请
    Process For Restoring Dielectric Properties 有权
    恢复介电性能的工艺

    公开(公告)号：US20100041234A1

    公开(公告)日：2010-02-18

    申请号：US12540395

    申请日：2009-08-13

    申请人： Scott Jeffrey Weigel ,  Mark Leonard O'Neill ,  Mary Kathryn Haas ,  Laura M. Matz ,  Glenn Michael Mitchell ,  Aiping Wu ,  Raymond Nicholas Vrtis ,  John Giles Langan

    发明人： Scott Jeffrey Weigel ,  Mark Leonard O'Neill ,  Mary Kathryn Haas ,  Laura M. Matz ,  Glenn Michael Mitchell ,  Aiping Wu ,  Raymond Nicholas Vrtis ,  John Giles Langan

    IPC分类号： H01L21/311

    CPC分类号： H01L21/3105

    摘要： A method for preparing an interlayer dielectric to minimize damage to the interlayer's dielectric properties, the method comprising the steps of: depositing a layer of a silicon-containing dielectric material onto a substrate, wherein the layer has a first dielectric constant and wherein the layer has at least one surface; providing an etched pattern in the layer by a method that includes at least one etch process and exposure to a wet chemical composition to provide an etched layer, wherein the etched layer has a second dielectric constant, and wherein the wet chemical composition contributes from 0 to 40% of the second dielectric constant; contacting the at least one surface of the layer with a silicon-containing fluid; optionally removing a first portion of the silicon-containing fluid such that a second portion of the silicon-containing fluid remains in contact with the at least one surface of the layer; and exposing the at least one surface of the layer to UV radiation and thermal energy, wherein the layer has a third dielectric constant that is restored to a value that is at least 90% restored relative to the second dielectric constant.

    摘要翻译： 一种用于制备层间电介质以最小化对中间层介电特性的损害的方法，所述方法包括以下步骤：在衬底上沉积含硅介电材料的层，其中所述层具有第一介电常数，并且其中所述层具有 至少一个表面; 通过包括至少一个蚀刻工艺和暴露于湿化学组合物以提供蚀刻层的方法在该层中提供蚀刻图案，其中所述蚀刻层具有第二介电常数，并且其中所述湿化学成分贡献于0至 40％的第二介电常数; 使层的至少一个表面与含硅流体接触; 任选地除去含硅流体的第一部分，使得含硅流体的第二部分保持与层的至少一个表面接触; 以及将所述层的所述至少一个表面暴露于UV辐射和热能，其中所述层具有恢复到相对于所述第二介电常数恢复至少90％的值的第三介电常数。

    Process Stability of NBDE Using Substituted Phenol Stabilizers
    10.
    发明申请
    Process Stability of NBDE Using Substituted Phenol Stabilizers 有权
    使用取代苯酚稳定剂的NBDE工艺稳定性

    公开(公告)号：US20090297711A1

    公开(公告)日：2009-12-03

    申请号：US12470002

    申请日：2009-05-21

    申请人： Steven Gerard Mayorga ,  Mary Kathryn Haas ,  Mark Leonard O'Neill ,  Dino Sinatore

    发明人： Steven Gerard Mayorga ,  Mary Kathryn Haas ,  Mark Leonard O'Neill ,  Dino Sinatore

    IPC分类号： C23C16/22 ,  C07C13/39 ,  B32B9/00

    CPC分类号： C07C7/20 ,  C07C13/64 ,  C07C39/06 ,  C07C13/00 ,  C07C15/00

    摘要： A stabilized cyclic alkene composition comprising one or more cyclic alkenes, and at least one stabilizer compound having the Formula (I), R1,R2,R3,R4,R5(C6)OH   Formula (I) wherein R1 through R5 can each independently be H, OH, C1-C8 linear, branched, or cyclic alkyl, C1-C8 linear, branched, or cyclic alkoxy or substituted or unsubstituted aryl, and wherein the stabilizer compound is present in an amount greater than 200 ppm up to 20,000 ppm and has a boiling point lower than 265° C.A method for forming a layer of carbon-doped silicon oxide on a substrate, which uses the stabilized alkene composition and a silicon containing compound.

    摘要翻译： 包含一种或多种环状烯烃的稳定化环烯烃组合物和至少一种具有式（I），R1，R2，R3，R4，R5（C6）OH式（Ⅰ）的稳定剂化合物，其中R1至R5各自独立地为 H，OH，C1-C8直链，支链或环状烷基，C1-C8直链，支链或环状烷氧基或取代或未取代的芳基，其中稳定剂化合物的存在量大于200ppm至20,000ppm， 具有低于265℃的沸点。在使用稳定的烯烃组合物和含硅化合物的基底上形成碳掺杂氧化硅层的方法。