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    Process for restoring dielectric properties
    1.
    发明授权
    Process for restoring dielectric properties 有权
    恢复介电性能的方法

    公开(公告)号：US08283260B2

    公开(公告)日：2012-10-09

    申请号：US12540395

    申请日：2009-08-13

    申请人： Scott Jeffrey Weigel ,  Mark Leonard O'Neill ,  Mary Kathryn Haas ,  Laura M. Matz ,  Glenn Michael Mitchell ,  Aiping Wu ,  Raymond Nicholas Vrtis ,  John Giles Langan

    发明人： Scott Jeffrey Weigel ,  Mark Leonard O'Neill ,  Mary Kathryn Haas ,  Laura M. Matz ,  Glenn Michael Mitchell ,  Aiping Wu ,  Raymond Nicholas Vrtis ,  John Giles Langan

    IPC分类号： H01L21/302

    CPC分类号： H01L21/3105

    摘要： A method for preparing an interlayer dielectric to minimize damage to the interlayer's dielectric properties, the method comprising the steps of: depositing a layer of a silicon-containing dielectric material onto a substrate, wherein the layer has a first dielectric constant and wherein the layer has at least one surface; providing an etched pattern in the layer by a method that includes at least one etch process and exposure to a wet chemical composition to provide an etched layer, wherein the etched layer has a second dielectric constant, and wherein the wet chemical composition contributes from 0 to 40% of the second dielectric constant; contacting the at least one surface of the layer with a silicon-containing fluid; optionally removing a first portion of the silicon-containing fluid such that a second portion of the silicon-containing fluid remains in contact with the at least one surface of the layer; and exposing the at least one surface of the layer to UV radiation and thermal energy, wherein the layer has a third dielectric constant that is restored to a value that is at least 90% restored relative to the second dielectric constant.

    摘要翻译： 一种用于制备层间电介质以最小化对中间层介电特性的损害的方法，所述方法包括以下步骤：在衬底上沉积含硅介电材料的层，其中所述层具有第一介电常数，并且其中所述层具有 至少一个表面; 通过包括至少一个蚀刻工艺和暴露于湿化学组合物以提供蚀刻层的方法在该层中提供蚀刻图案，其中所述蚀刻层具有第二介电常数，并且其中所述湿化学成分贡献于0至 40％的第二介电常数; 使层的至少一个表面与含硅流体接触; 任选地除去含硅流体的第一部分，使得含硅流体的第二部分保持与层的至少一个表面接触; 以及将所述层的所述至少一个表面暴露于UV辐射和热能，其中所述层具有恢复到相对于所述第二介电常数恢复至少90％的值的第三介电常数。

    Aminosilanes for Shallow Trench Isolation Films
    5.
    发明申请
    Aminosilanes for Shallow Trench Isolation Films 有权
    氨基硅烷用于浅沟槽隔离膜

    公开(公告)号：US20100009546A1

    公开(公告)日：2010-01-14

    申请号：US12492201

    申请日：2009-06-26

    申请人： Scott Jeffrey Weigel ,  Mark Leonard O'Neill ,  Bing Han ,  Hansong Cheng ,  Manchao Xiao ,  Chia-Chien Lee

    发明人： Scott Jeffrey Weigel ,  Mark Leonard O'Neill ,  Bing Han ,  Hansong Cheng ,  Manchao Xiao ,  Chia-Chien Lee

    IPC分类号： H01L21/3105 ,  H01L21/314 ,  C09D7/00

    CPC分类号： H01L21/3121 ,  C23C18/122 ,  C23C18/1245 ,  C23C18/14 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02282 ,  H01L21/316

    摘要： The present invention is a process for spin-on deposition of a silicon dioxide-containing film under oxidative conditions for gap-filling in high aspect ratio features for shallow trench isolation used in memory and logic circuit-containing semiconductor substrates, such as silicon wafers having one or more integrated circuit structures contained thereon, comprising the steps of: providing a semiconductor substrate having high aspect ratio features; contacting the semiconductor substrate with a liquid formulation comprising a low molecular weight aminosilane; forming a film by spreading the liquid formulation over the semiconductor substrate; heating the film at elevated temperatures under oxidative conditions. Compositions for this process are also set forth.

    摘要翻译： 本发明是一种用于在氧化条件下用于间隙填充的含二氧化硅的膜的沉积方法，用于在存储器和含逻辑电路的半导体衬底中使用的浅沟槽隔离的高纵横比特征中，例如具有 包含其中的一个或多个集成电路结构，包括以下步骤：提供具有高纵横比特征的半导体衬底; 使半导体衬底与包含低分子量氨基硅烷的液体制剂接触; 通过在半导体衬底上铺展液体制剂形成膜; 在氧化条件下在升高的温度下加热薄膜。 还介绍了这一过程的组成。

    Process For Restoring Dielectric Properties
    8.
    发明申请
    Process For Restoring Dielectric Properties 有权
    恢复介电性能的工艺

    公开(公告)号：US20100041234A1

    公开(公告)日：2010-02-18

    申请号：US12540395

    申请日：2009-08-13

    申请人： Scott Jeffrey Weigel ,  Mark Leonard O'Neill ,  Mary Kathryn Haas ,  Laura M. Matz ,  Glenn Michael Mitchell ,  Aiping Wu ,  Raymond Nicholas Vrtis ,  John Giles Langan

    发明人： Scott Jeffrey Weigel ,  Mark Leonard O'Neill ,  Mary Kathryn Haas ,  Laura M. Matz ,  Glenn Michael Mitchell ,  Aiping Wu ,  Raymond Nicholas Vrtis ,  John Giles Langan

    IPC分类号： H01L21/311

    CPC分类号： H01L21/3105

    摘要： A method for preparing an interlayer dielectric to minimize damage to the interlayer's dielectric properties, the method comprising the steps of: depositing a layer of a silicon-containing dielectric material onto a substrate, wherein the layer has a first dielectric constant and wherein the layer has at least one surface; providing an etched pattern in the layer by a method that includes at least one etch process and exposure to a wet chemical composition to provide an etched layer, wherein the etched layer has a second dielectric constant, and wherein the wet chemical composition contributes from 0 to 40% of the second dielectric constant; contacting the at least one surface of the layer with a silicon-containing fluid; optionally removing a first portion of the silicon-containing fluid such that a second portion of the silicon-containing fluid remains in contact with the at least one surface of the layer; and exposing the at least one surface of the layer to UV radiation and thermal energy, wherein the layer has a third dielectric constant that is restored to a value that is at least 90% restored relative to the second dielectric constant.

    摘要翻译： 一种用于制备层间电介质以最小化对中间层介电特性的损害的方法，所述方法包括以下步骤：在衬底上沉积含硅介电材料的层，其中所述层具有第一介电常数，并且其中所述层具有 至少一个表面; 通过包括至少一个蚀刻工艺和暴露于湿化学组合物以提供蚀刻层的方法在该层中提供蚀刻图案，其中所述蚀刻层具有第二介电常数，并且其中所述湿化学成分贡献于0至 40％的第二介电常数; 使层的至少一个表面与含硅流体接触; 任选地除去含硅流体的第一部分，使得含硅流体的第二部分保持与层的至少一个表面接触; 以及将所述层的所述至少一个表面暴露于UV辐射和热能，其中所述层具有恢复到相对于所述第二介电常数恢复至少90％的值的第三介电常数。