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    Oxygen Containing Precursors for Photovoltaic Passivation
    1.
    发明申请
    Oxygen Containing Precursors for Photovoltaic Passivation 审中-公开
    含氧光伏钝化前体

    公开(公告)号：US20130247971A1

    公开(公告)日：2013-09-26

    申请号：US13610311

    申请日：2012-09-11

    申请人： Mary Kathryn Haas ,  Anupama Mallikarjunan ,  Robert Gordon Ridgeway ,  Katherine Anne Hutchison ,  Michael T Savo

    发明人： Mary Kathryn Haas ,  Anupama Mallikarjunan ,  Robert Gordon Ridgeway ,  Katherine Anne Hutchison ,  Michael T Savo

    IPC分类号： H01L31/0216

    CPC分类号： H01L31/02168 ,  C23C16/18 ,  C23C16/345 ,  C23C16/401 ,  C23C16/56 ,  C23C28/04 ,  H01L31/02167 ,  H01L31/068 ,  H01L31/0682 ,  Y02E10/547

    摘要： Methods for depositing a passivation layer on a photovoltaic cell are disclosed. Methods include depositing a passivation layer comprising at least a bi-layer further comprising a silicon oxide and a silicon nitride layer. The silicon precursor(s) used for the deposition of the silicon oxide layer or the silicon nitride layer, respectively, is selected from the family of Si(OR1)xR2y, or from the family of SiRxHy, silane, and combinations thereof; wherein x+y=4, y≠4; R1 is C1-C8 alkyl; R2 is selected from the group consisting of hydrogen, C1-C8 alkyl, and NR*3; R is C1-C8 alkyl or NR*3; wherein R* can be hydrogen or C1-C8 alkyl; C1-C8 alkyl can be linear, branched or cyclic, the ligand can be saturated, unsaturated, or aromatic (for cyclic alkyl). Photovoltaic devices containing the passivation layers are also disclosed.

    摘要翻译： 公开了在光伏电池上沉积钝化层的方法。 方法包括沉积包括至少另外包含氧化硅和氮化硅层的双层的钝化层。 用于沉积硅氧化物层或氮化硅层的硅前体分别选自Si（OR 1）x R 2y族或SiR x H y族，硅烷族及其组合的族; 其中x + y = 4，y <4; R1是C1-C8烷基; R2选自氢，C1-C8烷基和NR * 3; R是C 1 -C 8烷基或NR * 3; 其中R *可以是氢或C1-C8烷基; C1-C8烷基可以是直链，支链或环状的，配体可以是饱和的，不饱和的或芳族的（对于环状烷基）。 还公开了含有钝化层的光伏器件。

    Process stability of NBDE using substituted phenol stabilizers
    3.
    发明授权
    Process stability of NBDE using substituted phenol stabilizers 有权
    使用取代苯酚稳定剂的NBDE工艺稳定性

    公开(公告)号：US08173213B2

    公开(公告)日：2012-05-08

    申请号：US12470002

    申请日：2009-05-21

    申请人： Steven Gerard Mayorga ,  Mary Kathryn Haas ,  Mark Leonard O'Neill ,  Dino Sinatore

    发明人： Steven Gerard Mayorga ,  Mary Kathryn Haas ,  Mark Leonard O'Neill ,  Dino Sinatore

    IPC分类号： C09K15/08 ,  C10L1/183 ,  C23C16/40 ,  H01L21/00

    CPC分类号： C07C7/20 ,  C07C13/64 ,  C07C39/06 ,  C07C13/00 ,  C07C15/00

    摘要： A stabilized cyclic alkene composition comprising one or more cyclic alkenes, and at least one stabilizer compound having the Formula (I), R1,R2,R3,R4,R5(C6)OH  Formula (I) wherein R′ through R5 can each independently be H, OH, C1-C8 linear, branched, or cyclic alkyl, C1-C8 linear, branched, or cyclic alkoxy or substituted or unsubstituted aryl, and wherein the stabilizer compound is present in an amount greater than 200 ppm up to 20,000 ppm and has a boiling point lower than 265° C. A method for forming a layer of carbon-doped silicon oxide on a substrate, which uses the stabilized alkene composition and a silicon containing compound.

    摘要翻译： 包含一种或多种环状烯烃的稳定化环烯烃组合物和至少一种具有式（I），R 1，R 2，R 3，R 4，R 5（C 6）OH式（I）的稳定剂化合物，其中R'至R 5可各自独立地 是H，OH，C1-C8直链，支链或环状烷基，C1-C8直链，支链或环状烷氧基或取代或未取代的芳基，其中稳定剂化合物的存在量大于200ppm至高达20,000ppm 并且具有低于265℃的沸点。使用稳定的烯烃组合物和含硅化合物在基材上形成碳掺杂氧化硅层的方法。

    LOW K PRECURSORS PROVIDING SUPERIOR INTEGRATION ATTRIBUTES
    4.
    发明申请
    LOW K PRECURSORS PROVIDING SUPERIOR INTEGRATION ATTRIBUTES 有权
    提供高级整合属性的低K前提

    公开(公告)号：US20110308937A1

    公开(公告)日：2011-12-22

    申请号：US12969042

    申请日：2010-12-15

    申请人： Mary Kathryn Haas ,  Raymond Nicholas Vrtis ,  Laura M. Matz

    发明人： Mary Kathryn Haas ,  Raymond Nicholas Vrtis ,  Laura M. Matz

    IPC分类号： C09D183/04 ,  C23C14/10 ,  C08J7/18

    CPC分类号： H01L21/02214 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348

    摘要： A deposition for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including one precursor of an organosilane or an organosiloxane, and a porogen distinct from the precursor, wherein the porogen is aromatic in nature; applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents to deposit a film, containing the porogen; and removing substantially all of the organic material by UV radiation to provide the porous film with pores and a dielectric constant less than 2.6.

    摘要翻译： 一种用于生产多孔有机硅玻璃膜的沉积物，其特征在于，包括：在真空室中引入包括有机硅烷或有机硅氧烷的一种前体的气态试剂和与前体不同的致孔剂，其中致孔剂本质上是芳族的; 向室中的气态试剂施加能量以诱导气态试剂沉积含有致孔剂的膜的反应; 并通过紫外线辐射去除基本上所有的有机材料，以提供具有小于2.6的孔隙和介电常数的多孔膜。

    Process For Restoring Dielectric Properties
    5.
    发明申请
    Process For Restoring Dielectric Properties 有权
    恢复介电性能的工艺

    公开(公告)号：US20100041234A1

    公开(公告)日：2010-02-18

    申请号：US12540395

    申请日：2009-08-13

    申请人： Scott Jeffrey Weigel ,  Mark Leonard O'Neill ,  Mary Kathryn Haas ,  Laura M. Matz ,  Glenn Michael Mitchell ,  Aiping Wu ,  Raymond Nicholas Vrtis ,  John Giles Langan

    发明人： Scott Jeffrey Weigel ,  Mark Leonard O'Neill ,  Mary Kathryn Haas ,  Laura M. Matz ,  Glenn Michael Mitchell ,  Aiping Wu ,  Raymond Nicholas Vrtis ,  John Giles Langan

    IPC分类号： H01L21/311

    CPC分类号： H01L21/3105

    摘要： A method for preparing an interlayer dielectric to minimize damage to the interlayer's dielectric properties, the method comprising the steps of: depositing a layer of a silicon-containing dielectric material onto a substrate, wherein the layer has a first dielectric constant and wherein the layer has at least one surface; providing an etched pattern in the layer by a method that includes at least one etch process and exposure to a wet chemical composition to provide an etched layer, wherein the etched layer has a second dielectric constant, and wherein the wet chemical composition contributes from 0 to 40% of the second dielectric constant; contacting the at least one surface of the layer with a silicon-containing fluid; optionally removing a first portion of the silicon-containing fluid such that a second portion of the silicon-containing fluid remains in contact with the at least one surface of the layer; and exposing the at least one surface of the layer to UV radiation and thermal energy, wherein the layer has a third dielectric constant that is restored to a value that is at least 90% restored relative to the second dielectric constant.

    摘要翻译： 一种用于制备层间电介质以最小化对中间层介电特性的损害的方法，所述方法包括以下步骤：在衬底上沉积含硅介电材料的层，其中所述层具有第一介电常数，并且其中所述层具有 至少一个表面; 通过包括至少一个蚀刻工艺和暴露于湿化学组合物以提供蚀刻层的方法在该层中提供蚀刻图案，其中所述蚀刻层具有第二介电常数，并且其中所述湿化学成分贡献于0至 40％的第二介电常数; 使层的至少一个表面与含硅流体接触; 任选地除去含硅流体的第一部分，使得含硅流体的第二部分保持与层的至少一个表面接触; 以及将所述层的所述至少一个表面暴露于UV辐射和热能，其中所述层具有恢复到相对于所述第二介电常数恢复至少90％的值的第三介电常数。

    Process Stability of NBDE Using Substituted Phenol Stabilizers
    6.
    发明申请
    Process Stability of NBDE Using Substituted Phenol Stabilizers 有权
    使用取代苯酚稳定剂的NBDE工艺稳定性

    公开(公告)号：US20090297711A1

    公开(公告)日：2009-12-03

    申请号：US12470002

    申请日：2009-05-21

    申请人： Steven Gerard Mayorga ,  Mary Kathryn Haas ,  Mark Leonard O'Neill ,  Dino Sinatore

    发明人： Steven Gerard Mayorga ,  Mary Kathryn Haas ,  Mark Leonard O'Neill ,  Dino Sinatore

    IPC分类号： C23C16/22 ,  C07C13/39 ,  B32B9/00

    CPC分类号： C07C7/20 ,  C07C13/64 ,  C07C39/06 ,  C07C13/00 ,  C07C15/00

    摘要： A stabilized cyclic alkene composition comprising one or more cyclic alkenes, and at least one stabilizer compound having the Formula (I), R1,R2,R3,R4,R5(C6)OH   Formula (I) wherein R1 through R5 can each independently be H, OH, C1-C8 linear, branched, or cyclic alkyl, C1-C8 linear, branched, or cyclic alkoxy or substituted or unsubstituted aryl, and wherein the stabilizer compound is present in an amount greater than 200 ppm up to 20,000 ppm and has a boiling point lower than 265° C.A method for forming a layer of carbon-doped silicon oxide on a substrate, which uses the stabilized alkene composition and a silicon containing compound.

    摘要翻译： 包含一种或多种环状烯烃的稳定化环烯烃组合物和至少一种具有式（I），R1，R2，R3，R4，R5（C6）OH式（Ⅰ）的稳定剂化合物，其中R1至R5各自独立地为 H，OH，C1-C8直链，支链或环状烷基，C1-C8直链，支链或环状烷氧基或取代或未取代的芳基，其中稳定剂化合物的存在量大于200ppm至20,000ppm， 具有低于265℃的沸点。在使用稳定的烯烃组合物和含硅化合物的基底上形成碳掺杂氧化硅层的方法。

    Stabilizers for the stabilization of unsaturated hydrocarbon-based precursor
    9.
    发明授权
    Stabilizers for the stabilization of unsaturated hydrocarbon-based precursor 有权
    用于稳定不饱和烃类前体的稳定剂

    公开(公告)号：US08440099B2

    公开(公告)日：2013-05-14

    申请号：US12128381

    申请日：2008-05-28

    申请人： Steven Gerard Mayorga ,  Kelly Ann Chandler ,  Mary Kathryn Haas ,  Mark Leonard O'Neill ,  Dino Sinatore

    发明人： Steven Gerard Mayorga ,  Kelly Ann Chandler ,  Mary Kathryn Haas ,  Mark Leonard O'Neill ,  Dino Sinatore

    IPC分类号： C09K3/00 ,  C09K15/20

    CPC分类号： C07C7/20 ,  C07C2602/42 ,  C07C13/39

    摘要： A stabilized composition consists essentially of unsaturated hydrocarbon-based materials, and a stabilizer selected from the group consisting of a hydroxybenzophenone and a nitroxyl radical based stabilizer.A stabilized composition consists essentially of unsaturated hydrocarbon-based materials, at least one polar liquid and a stabilizer selected from the group consisting of a hydroxybenzophenone, a nitroxyl radical based stabilizer and a hydroquinone based stabilizer.A method for stabilizing unsaturated hydrocarbon-based precursor material against the polymerization comprises providing a stabilizer selected from the group consisting of a hydroxybenzophenone and a nitroxyl radical based stabilizer.A method for stabilizing a mixture of unsaturated hydrocarbon-based precursor material with at lease one polar liquid against the polymerization comprises adding to the mixture, a stabilizer selected from the group consisting of a hydroxybenzophenone and a nitroxyl radical based stabilizer.

    摘要翻译： 稳定化的组合物基本上由不饱和烃基材料和选自羟基二苯甲酮和基于硝酰基的稳定剂组成的组中的稳定剂组成。 稳定化的组合物基本上由不饱和烃基材料，至少一种极性液体和选自羟基二苯甲酮，基于硝酰基的稳定剂和氢醌基稳定剂的稳定剂组成。 稳定不饱和烃基前体材料以抗聚合的方法包括提供选自羟基二苯甲酮和基于硝酰基的稳定剂的稳定剂。 用于使不饱和烃类前体材料与至少一种极性液体的混合物与聚合反应的方法包括向混合物中加入选自羟基二苯甲酮和基于硝酰基的稳定剂的稳定剂。

    Process for restoring dielectric properties
    10.
    发明授权
    Process for restoring dielectric properties 有权
    恢复介电性能的方法

    公开(公告)号：US08283260B2

    公开(公告)日：2012-10-09

    申请号：US12540395

    申请日：2009-08-13

    申请人： Scott Jeffrey Weigel ,  Mark Leonard O'Neill ,  Mary Kathryn Haas ,  Laura M. Matz ,  Glenn Michael Mitchell ,  Aiping Wu ,  Raymond Nicholas Vrtis ,  John Giles Langan

    发明人： Scott Jeffrey Weigel ,  Mark Leonard O'Neill ,  Mary Kathryn Haas ,  Laura M. Matz ,  Glenn Michael Mitchell ,  Aiping Wu ,  Raymond Nicholas Vrtis ,  John Giles Langan

    IPC分类号： H01L21/302

    CPC分类号： H01L21/3105

    摘要： A method for preparing an interlayer dielectric to minimize damage to the interlayer's dielectric properties, the method comprising the steps of: depositing a layer of a silicon-containing dielectric material onto a substrate, wherein the layer has a first dielectric constant and wherein the layer has at least one surface; providing an etched pattern in the layer by a method that includes at least one etch process and exposure to a wet chemical composition to provide an etched layer, wherein the etched layer has a second dielectric constant, and wherein the wet chemical composition contributes from 0 to 40% of the second dielectric constant; contacting the at least one surface of the layer with a silicon-containing fluid; optionally removing a first portion of the silicon-containing fluid such that a second portion of the silicon-containing fluid remains in contact with the at least one surface of the layer; and exposing the at least one surface of the layer to UV radiation and thermal energy, wherein the layer has a third dielectric constant that is restored to a value that is at least 90% restored relative to the second dielectric constant.

    摘要翻译： 一种用于制备层间电介质以最小化对中间层介电特性的损害的方法，所述方法包括以下步骤：在衬底上沉积含硅介电材料的层，其中所述层具有第一介电常数，并且其中所述层具有 至少一个表面; 通过包括至少一个蚀刻工艺和暴露于湿化学组合物以提供蚀刻层的方法在该层中提供蚀刻图案，其中所述蚀刻层具有第二介电常数，并且其中所述湿化学成分贡献于0至 40％的第二介电常数; 使层的至少一个表面与含硅流体接触; 任选地除去含硅流体的第一部分，使得含硅流体的第二部分保持与层的至少一个表面接触; 以及将所述层的所述至少一个表面暴露于UV辐射和热能，其中所述层具有恢复到相对于所述第二介电常数恢复至少90％的值的第三介电常数。