发明申请
- 专利标题： LOW-IMPURITY ORGANOSILICON PRODUCT AS PRECURSOR FOR CVD
- 专利标题（中）： 低成本有机硅产品作为CVD的前身
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申请号： US13205015申请日： 2011-08-08
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公开(公告)号： US20110295033A1公开(公告)日： 2011-12-01
- 发明人: Steven Gerard Mayorga , Mark Leonard O'Neill , Kelly A. Chandler
- 申请人： Steven Gerard Mayorga , Mark Leonard O'Neill , Kelly A. Chandler
- 申请人地址： US PA Allentown
- 专利权人： AIR PRODUCTS AND CHEMICALS, INC.
- 当前专利权人： AIR PRODUCTS AND CHEMICALS, INC.
- 当前专利权人地址： US PA Allentown
- 主分类号： C07F7/02
- IPC分类号： C07F7/02
摘要：
The present invention provides an organosilicon composition comprising diethoxymethylsilane, a concentration of dissolved residual chloride, and a concentration of dissolved residual chloride scavenger that does not yield unwanted chloride salt precipitate when combined with another composition comprising diethoxymethylsilane.
公开/授权文献
- US08329933B2 Low-impurity organosilicon product as precursor for CVD 公开/授权日：2012-12-11
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