公开(公告)号：US09447287B2

公开(公告)日：2016-09-20

申请号：US14122825

申请日：2012-06-01

申请人： Manchao Xiao ,  Xinjian Lei ,  Ronald Martin Pearlstein ,  Haripin Chandra ,  Eugene Joseph Karwacki, Jr. ,  Bing Han ,  Mark Leonard O'Neill

发明人： Manchao Xiao ,  Xinjian Lei ,  Ronald Martin Pearlstein ,  Haripin Chandra ,  Eugene Joseph Karwacki, Jr. ,  Bing Han ,  Mark Leonard O'Neill

IPC分类号： C23C16/34 ,  C09D5/00 ,  C07F7/08 ,  C23C16/30 ,  C23C16/40 ,  C23C16/455

CPC分类号： H01L21/02211 ,  C07F7/0896 ,  C07F7/10 ,  C09D5/00 ,  C09D7/63 ,  C23C16/30 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45553 ,  H01L21/02126 ,  H01L21/0228

摘要： Described herein are compositions for depositing a carbon-doped silicon containing film wherein the composition comprises a first precursor comprising at least one compound selected from the group consisting of: an organoaminoalkylsilane having a formula of R5Si(NR3R4)xH3−x wherein x=1, 2, 3; an organoalkoxyalkylsilane having a formula of R6Si(OR7)xH3−x wherein x=1, 2, 3; an organoaminosilane having a formula of R8N(SiR9(NR10R11)H)2; an organoaminosilane having a formula of R8N(SiR9LH)2 and combinations thereof; and optionally a second precursor comprising a compound having the formula: Si(NR1R2)H3. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).

摘要翻译： 本文描述了用于沉积含碳掺杂硅的膜的组合物，其中组合物包含第一前体，其包含至少一种选自下组的化合物：具有式R 5 Si（NR 3 R 4）x H 3-x的有机氨基烷基硅烷，其中x = 1， 2，3; 具有式R6Si（OR7）xH3-x的有机烷氧基烷基硅烷，其中x = 1,2,3; 具有式R 8 N（SiR 9（NR 10 R 11）H）2的有机氨基硅烷; 具有式R8N（SiR9LH）2的有机氨基硅烷及其组合; 和任选地包含具有下式的化合物的第二前体：Si（NR1R2）H3。 本文还描述了使用该组合物沉积碳掺杂含硅膜的方法，其中所述方法选自以下：循环化学气相沉积（CCVD），原子层沉积（ALD），等离子体增强ALD（PEALD）和 等离子增强CCVD（PECCVD）。

公开(公告)号：US08795411B2

公开(公告)日：2014-08-05

申请号：US13359053

申请日：2012-01-26

申请人： Jeffrey Raymond Hufton ,  Thomas Stephen Farris ,  Timothy Christopher Golden ,  Eugene Joseph Karwacki, Jr.

发明人： Jeffrey Raymond Hufton ,  Thomas Stephen Farris ,  Timothy Christopher Golden ,  Eugene Joseph Karwacki, Jr.

IPC分类号： B01D53/04

CPC分类号： B01D53/02 ,  B01D2253/108 ,  B01D2256/10 ,  B01D2256/16 ,  B01D2256/18 ,  B01D2257/108 ,  B01D2257/11 ,  B01D2258/0216 ,  B01D2259/40083 ,  B01D2259/455 ,  C01B23/0052 ,  C01B2210/0037 ,  C01B2210/0046

摘要： Method for recovering a desired component from a waste gas comprising (a) at an operating facility, introducing a waste gas comprising the desired component and one or more undesired components into an adsorber containing adsorbent material selective for the desired component, adsorbing at least a portion of the desired component therein, (b) terminating flow of waste gas into the adsorber; and (c) recovering and concentrating the desired component by either (1) isolating the adsorber, transporting the adsorber to a central processing facility, or (2) withdrawing from the adsorber an intermediate gas enriched in the desired component, compressing the intermediate gas and storing it in a vessel, isolating the vessel, transporting the vessel to a central processing facility to provide a concentrated product further enriched in the desired component.

摘要翻译： 用于从废气中回收所需组分的方法，包括（a）在操作设施处，将包含所需组分的废气和一种或多种不需要的组分引入含有对所需组分有选择性的吸附材料的吸附剂中，吸附至少一部分 的（b）终止废气进入吸附器的流动; （c）通过（1）分离吸附器，将吸附器输送到中央处理设备来回收和浓缩所需组分，或者（2）从吸附器抽出富含所需组分的中间气体，压缩中间气体和 将其储存在容器中，分离容器，将容器运输到中央处理设备以提供进一步富集所需组分的浓缩产物。

公开(公告)号：US08591634B2

公开(公告)日：2013-11-26

申请号：US13009400

申请日：2011-01-19

申请人： David Charles Winchester ,  Matthew John Bosco ,  Gerald W. Klein ,  Isaac Patrick West ,  Richard Linton Samsal ,  Douglas Paul Dee ,  Andrew David Johnson ,  Eugene Joseph Karwacki, Jr.

发明人： David Charles Winchester ,  Matthew John Bosco ,  Gerald W. Klein ,  Isaac Patrick West ,  Richard Linton Samsal ,  Douglas Paul Dee ,  Andrew David Johnson ,  Eugene Joseph Karwacki, Jr.

IPC分类号： B01D53/02

CPC分类号： B01D53/04 ,  B01D2256/18 ,  B01D2258/0216 ,  B01D2259/402 ,  Y10T137/7837

摘要： An apparatus and process for recovering a desired gas such as xenon difluoride, xenon, argon, helium or neon, from the effluent of a chemical process reactor that utilizes such gases alone or in a gas mixture or in a molecule that becomes decomposed wherein the chemical process reactor uses a sequence of different gas composition not all of which contain the desired gas and the desired gas is captured and recovered substantially only during the time the desired gas is in the effluent.

摘要翻译： 用于从化学处理反应器的流出物中单独或以气体混合物或分解成分解的分子中回收所需气体如二氯化氙，氙气，氩气，氦气或氖气的设备和方法，其中化学 过程反应器使用不同于所有气体组合的序列，其中所有气体组成都不包含所需气体，并且所需气体基本上仅在所需气体在流出物中的时间内被捕获和回收。

公开(公告)号：US20100022095A1

公开(公告)日：2010-01-28

申请号：US12360588

申请日：2009-01-27

申请人： Dingjun Wu ,  Eugene Joseph Karwacki, JR. ,  Anupama Mallikarjunan ,  Andrew David Johnson

发明人： Dingjun Wu ,  Eugene Joseph Karwacki, JR. ,  Anupama Mallikarjunan ,  Andrew David Johnson

IPC分类号： H01L21/3065 ,  H01L21/302 ,  H01L21/306 ,  C01B23/00

CPC分类号： B08B7/0035 ,  C23C16/4405 ,  C23F4/00 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/67028

摘要： This invention relates to a process for selective removal of materials, such as: silicon, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, tantalum, niobium, boron, phosphorus, germanium, arsenic, and mixtures thereof, from silicon dioxide, silicon nitride, nickel, aluminum, TiNi alloy, photoresist, phosphosilicate glass, boron phosphosilicate glass, polyimides, gold, copper, platinum, chromium, aluminum oxide, silicon carbide and mixtures thereof. The process is related to the important applications in the cleaning or etching process for semiconductor deposition chambers and semiconductor tools, devices in a micro electro mechanical system (MEMS), and ion implantation systems. Methods of forming XeF2 by reacting Xe with a fluorine containing chemical are also provided, where the fluorine containing chemical is selected from the group consisting of F2, NF3, C2F6, CF4, C3F8, SF6, a plasma containing F atoms generated from an upstream plasma generator and mixtures thereof.

摘要翻译： 本发明涉及从二氧化硅，硅，硅，钼，钨，钨，钛，锆，铪，钒，钽，铌，硼，磷，锗，砷及其混合物中选择性地去除材料的方法 氮化物，镍，铝，TiNi合金，光致抗蚀剂，磷硅酸盐玻璃，硼磷硅酸盐玻璃，聚酰亚胺，金，铜，铂，铬，氧化铝，碳化硅及其混合物。 该过程涉及用于半导体沉积室和半导体工具，微机电系统（MEMS）中的器件和离子注入系统的清洁或蚀刻工艺中的重要应用。 还提供了通过使Xe与含氟化合物反应形成XeF 2的方法，其中含氟化学物质选自由F2，NF3，C2F6，CF4，C3F8，SF6组成的组，含有从上游等离子体产生的F原子的等离子体 发电机及其混合物。

公开(公告)号：US07468290B2

公开(公告)日：2008-12-23

申请号：US10624357

申请日：2003-07-21

申请人： Aaron Scott Lukas ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Raymond Nicholas Vrtis ,  Mark Daniel Bitner ,  Eugene Joseph Karwacki, Jr.

发明人： Aaron Scott Lukas ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Raymond Nicholas Vrtis ,  Mark Daniel Bitner ,  Eugene Joseph Karwacki, Jr.

IPC分类号： H01L51/40

CPC分类号： H01L21/02126 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31695

摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i.e., material hardness and elastic modulus) compared to the as-deposited film.

摘要翻译： 当在集成电路中用作层间电介质时，已经确定了低介电材料和包含它们的薄膜以改善性能，以及制造其的方法。 在本发明的一个方面，将有机硅酸盐玻璃膜暴露于紫外光源，其中曝光后的膜与其相比具有至少10％或更大的机械性能（即，材料硬度和弹性模量）的改善 沉积膜。

公开(公告)号：US07119032B2

公开(公告)日：2006-10-10

申请号：US10924321

申请日：2004-08-23

申请人： Bing Ji ,  Stephen Andrew Motika ,  Dingjun Wu ,  Eugene Joseph Karwacki, Jr. ,  David Allen Roberts

发明人： Bing Ji ,  Stephen Andrew Motika ,  Dingjun Wu ,  Eugene Joseph Karwacki, Jr. ,  David Allen Roberts

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01J37/32495 ,  B01J2219/024 ,  C23C16/4404

摘要： This invention relates to apparatus and a method to protect the internal components of semiconductor processing equipment such as a plasma reactor or a reactive species generator against physical and/or chemical damages during etching and/or cleaning processes. Layered superlattice materials having three or more metal elements such as strontium bismuth tantalate (SBT) are used to form a protective barrier on the surfaces of the internal components of a reaction chamber.

公开(公告)号：US08906455B2

公开(公告)日：2014-12-09

申请号：US13624190

申请日：2012-09-21

申请人： Liu Yang ,  Xinjian Lei ,  Bing Han ,  Manchao Xiao ,  Eugene Joseph Karwacki, Jr. ,  Hansong Cheng

发明人： Liu Yang ,  Xinjian Lei ,  Bing Han ,  Manchao Xiao ,  Eugene Joseph Karwacki, Jr. ,  Hansong Cheng

IPC分类号： C23C16/00 ,  H01L21/02 ,  H01L21/316 ,  H01L21/318 ,  C23C16/34 ,  H01L21/314 ,  C23C16/40 ,  C23C16/455 ,  C23C16/30

CPC分类号： H01L21/02271 ,  C23C16/308 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45536 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3145 ,  H01L21/31608 ,  H01L21/31633 ,  H01L21/3185

摘要： This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition.

摘要翻译： 本发明公开了在低沉积温度下形成氮化硅，氮氧化硅，氧化硅，碳掺杂氮化硅，碳掺杂氧化硅和碳掺杂氧氮化物膜的方法。 用于沉积的含硅前体是一氯硅烷（MCS）和一氯代烷基硅烷。 该方法优选通过使用等离子体增强原子层沉积，等离子体增强化学气相沉积和等离子体增强循环化学气相沉积来进行。

公开(公告)号：US20140287164A1

公开(公告)日：2014-09-25

申请号：US14122825

申请日：2012-06-01

申请人： Manchao Xiao ,  Xinjian Lei ,  Ronald Martin Pearlstein ,  Haripin Chandra ,  Eugene Joseph Karwacki, JR. ,  Bing Han ,  Mark Leonard O'Neill

发明人： Manchao Xiao ,  Xinjian Lei ,  Ronald Martin Pearlstein ,  Haripin Chandra ,  Eugene Joseph Karwacki, JR. ,  Bing Han ,  Mark Leonard O'Neill

IPC分类号： C09D5/00 ,  C23C16/34 ,  C23C16/40

CPC分类号： H01L21/02211 ,  C07F7/0896 ,  C07F7/10 ,  C09D5/00 ,  C09D7/63 ,  C23C16/30 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45553 ,  H01L21/02126 ,  H01L21/0228

摘要： Described herein are compositions for depositing a carbon-doped silicon containing film wherein the composition comprises a first precursor comprising at least one compound selected from the group consisting of: an organoaminoalkylsilane having a formula of R5Si(NR3R4)xH3-x wherein x=1, 2, 3; an organoalkoxyalkylsilane having a formula of R6Si(OR7)xH3-x wherein x=1, 2, 3; an organoaminosilane having a formula of R8N(SiR9(NR10R11)H)2; an organoaminosilane having a formula of R8N(SiR9LH)2 and combinations thereof; and optionally a second precursor comprising a compound having the formula: Si(NR1R2)H3. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).

摘要翻译： 本文描述了用于沉积含碳掺杂硅的膜的组合物，其中组合物包含第一前体，其包含至少一种选自下组的化合物：具有式R 5 Si（NR 3 R 4）x H 3-x的有机氨基烷基硅烷，其中x = 1， 2，3; 具有式R6Si（OR7）xH3-x的有机烷氧基烷基硅烷，其中x = 1,2,3; 具有式R 8 N（SiR 9（NR 10 R 11）H）2的有机氨基硅烷; 具有式R8N（SiR9LH）2的有机氨基硅烷及其组合; 和任选地包含具有下式的化合物的第二前体：Si（NR1R2）H3。 本文还描述了使用该组合物沉积碳掺杂含硅膜的方法，其中所述方法选自以下：循环化学气相沉积（CCVD），原子层沉积（ALD），等离子体增强ALD（PEALD）和 等离子增强CCVD（PECCVD）。

公开(公告)号：US08399349B2

公开(公告)日：2013-03-19

申请号：US11693707

申请日：2007-03-29

申请人： Raymond Nicholas Vrtis ,  Dingjun Wu ,  Mark Leonard O'Neill ,  Mark Daniel Bitner ,  Jean Louise Vincent ,  Eugene Joseph Karwacki, Jr. ,  Aaron Scott Lukas

发明人： Raymond Nicholas Vrtis ,  Dingjun Wu ,  Mark Leonard O'Neill ,  Mark Daniel Bitner ,  Jean Louise Vincent ,  Eugene Joseph Karwacki, Jr. ,  Aaron Scott Lukas

IPC分类号： H01L21/4763

CPC分类号： H01L21/764 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/02172 ,  H01L21/02203 ,  H01L21/02205 ,  H01L21/02263 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/30604 ,  H01L21/31695 ,  H01L21/423 ,  H01L21/7682 ,  H01L2221/1047

摘要： The present invention is a process for forming an air gap within a substrate, the process comprising: providing a substrate; depositing a sacrificial material by deposition of at least one sacrificial material precursor; depositing a composite layer; removale of the porogen material in the composite layer to form a porous layer and contacting the layered substrate with a removal media to substantially remove the sacrificial material and provide the air gaps within the substrate; wherein the at least one sacrificial material precursor is selected from the group consisting of: an organic porogen; silicon, and a polar solvent soluble metal oxide and mixtures thereof.

摘要翻译： 本发明是一种在衬底内形成气隙的方法，该方法包括：提供衬底; 通过沉积至少一种牺牲材料前体沉积牺牲材料; 沉积复合层; 去除复合层中的致孔剂材料以形成多孔层并使分层的基底与去除介质接触，以基本上去除牺牲材料并在基底内提供气隙; 其中所述至少一种牺牲材料前体选自：有机致孔剂; 硅和极性溶剂可溶性金属氧化物及其混合物。

公开(公告)号：US20100304313A1

公开(公告)日：2010-12-02

申请号：US12846369

申请日：2010-07-29

申请人： Peng Zhang ,  Danielle Megan King Curzi ,  Eugene Joseph Karwacki, JR. ,  Leslie Cox Barber

发明人： Peng Zhang ,  Danielle Megan King Curzi ,  Eugene Joseph Karwacki, JR. ,  Leslie Cox Barber

IPC分类号： G03F7/42

CPC分类号： G03F7/322 ,  G03F7/0048 ,  G03F7/091 ,  G03F7/16 ,  G03F7/168 ,  G03F7/3021 ,  G03F7/32 ,  G03F7/38 ,  G03F7/40 ,  G03F7/425 ,  Y10S134/902

摘要： Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain preferred embodiments, the process solution of the present invention may reduce post-development defects such as pattern collapse when employed as a rinse solution either during or after the development of the patterned photoresist layer. Also disclosed is a method for reducing the number of pattern collapse defects on a plurality of photoresist coated substrates employing the process solution of the present invention.

摘要翻译： 使用包含一种或多种表面活性剂的工艺溶液来减少半导体器件制造中的缺陷数量。 在某些优选实施方案中，当在图案化光致抗蚀剂层的显影期间或之后，当用作冲洗溶液时，本发明的工艺溶液可以减少显影后缺陷，例如图案塌陷。 还公开了一种减少使用本发明的工艺溶液的多个光致抗蚀剂涂覆的基材上的图案塌陷缺陷的数量的方法。