发明授权
- 专利标题： Materials and methods of forming controlled void
- 专利标题（中）： 形成受控空隙的材料和方法
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申请号： US11693707申请日： 2007-03-29
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公开(公告)号： US08399349B2公开(公告)日： 2013-03-19
- 发明人: Raymond Nicholas Vrtis , Dingjun Wu , Mark Leonard O'Neill , Mark Daniel Bitner , Jean Louise Vincent , Eugene Joseph Karwacki, Jr. , Aaron Scott Lukas
- 申请人： Raymond Nicholas Vrtis , Dingjun Wu , Mark Leonard O'Neill , Mark Daniel Bitner , Jean Louise Vincent , Eugene Joseph Karwacki, Jr. , Aaron Scott Lukas
- 申请人地址： US PA Allentown
- 专利权人： Air Products and Chemicals, Inc.
- 当前专利权人： Air Products and Chemicals, Inc.
- 当前专利权人地址： US PA Allentown
- 代理商 Lina Yang
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
The present invention is a process for forming an air gap within a substrate, the process comprising: providing a substrate; depositing a sacrificial material by deposition of at least one sacrificial material precursor; depositing a composite layer; removale of the porogen material in the composite layer to form a porous layer and contacting the layered substrate with a removal media to substantially remove the sacrificial material and provide the air gaps within the substrate; wherein the at least one sacrificial material precursor is selected from the group consisting of: an organic porogen; silicon, and a polar solvent soluble metal oxide and mixtures thereof.
公开/授权文献
- US20080038934A1 MATERIALS AND METHODS OF FORMING CONTROLLED VOID 公开/授权日：2008-02-14
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