Abstract:
A stack type semiconductor package and a method of fabricating the stack type semiconductor package. The stack type semiconductor package includes: a lower semiconductor package including a circuit board, a semiconductor chip which is disposed on an upper surface of the circuit board, via-pads which are arrayed on the upper surface of the circuit board around the semiconductor chip, and an encapsulation layer which encapsulates the upper surface of the circuit board and has via-holes through which the via-pads are exposed; and an upper semiconductor package which is stacked on the encapsulation layer, is electrically connected to the lower semiconductor package, and comprises internal connection terminals which are formed on a lower surface of the upper semiconductor package.
Abstract:
A semiconductor package includes a first package board, a first semiconductor chip arranged on the first package board, a heat transfer layer arranged on the first semiconductor chip, a heat spreader arranged on the heat transfer layer, and a housing having a molding part arranged on the first package board and directly surrounding side surfaces of the first semiconductor chip and a guide wall arranged on the molding part, with the guide wall spaced apart from the heat spreader and surrounding side surfaces of the heat spreader.
Abstract:
A multi-chip package may include a first semiconductor package, a second semiconductor package and an interposer chip. The second semiconductor package may be arranged over the first semiconductor package. The interposer chip may be interposed between the first semiconductor package and the second semiconductor package. The interposer chip may have a receiving groove configured to receive the first semiconductor package. Thus, electrical connection reliability between the first semiconductor package and the second semiconductor package may be improved under a condition that the connecting terminals may have small sizes.
Abstract:
Provided is a method of forming a package-on-package. An encapsulation is formed to cover a wafer using a wafer level molding process. The wafer includes a plurality of semiconductor chips and a plurality of through silicon vias (TSVs) passing through the semiconductor chips. The encapsulant may have openings aligned with the TSVs. The encapsulant and the semiconductor chips are divided to form a plurality of semiconductor packages. Another semiconductor package is stacked on one selected from the semiconductor packages. The other semiconductor package is electrically connected to the TSVs.
Abstract:
Provided are a semiconductor package and a method of forming the same. The semiconductor package includes a stress reliever disposed on a part (more specifically, a weak part) of a semiconductor chip. The stress reliever relieves thermal and/or physical stresses caused by a molding layer. As a result, the semiconductor chip does not suffer from the thermal and/or physical stresses.
Abstract:
Semiconductor package includes a first semiconductor package including a first printed circuit board, and a first semiconductor device mounted on the first printed circuit board, and a second semiconductor package stacked on the first semiconductor package, and including a second printed circuit board and a second semiconductor device mounted on the second printed circuit board. The semiconductor package includes at least one first through electrode electrically connecting the second semiconductor package to the first printed circuit board through the first semiconductor device.
Abstract:
A semiconductor package apparatus includes a first semiconductor package including a first semiconductor chip, a first substrate, a first terminal, and a first signal transfer medium, and a second semiconductor package including a second semiconductor chip, a second substrate, a second terminal, and a second signal transfer medium. At least one package connecting solder ball is located between the first terminal and the second terminal. A first solder ball guide member is positioned around the first terminal of the first substrate and includes a first guide surface for guiding a shape of the package connecting solder ball.
Abstract:
A package on package is provided herein, the package on package including a first semiconductor package including a first substrate, a first semiconductor chip stacked on the first substrate, a plurality of first connection members on an upper surface of the first substrate and in a first molding material, and a plurality of via holes which respectively expose the plurality of first connection members through the first molding material; a second semiconductor package including a second substrate, a second semiconductor chip stacked on the second substrate, and a plurality of second connection members on a lower surface of the second substrate; and a plurality of connection portions including a plurality of cores and a plurality of conductive fusion layers surrounding the plurality of cores, wherein the plurality of conductive fusion layers contact the upper surface of the first substrate and the lower surface of the second substrate.
Abstract:
A stack type semiconductor package and a method of fabricating the stack type semiconductor package. The stack type semiconductor package includes: a lower semiconductor package including a circuit board, a semiconductor chip which is disposed on an upper surface of the circuit board, via-pads which are arrayed on the upper surface of the circuit board around the semiconductor chip, and an encapsulation layer which encapsulates the upper surface of the circuit board and has via-holes through which the via-pads are exposed; and an upper semiconductor package which is stacked on the encapsulation layer, is electrically connected to the lower semiconductor package, and comprises internal connection terminals which are formed on a lower surface of the upper semiconductor package.
Abstract:
A semiconductor package may include a substrate having first and second surfaces, the second surface including a recessed portion, a first semiconductor chip mounted on the first surface, a first ball land outside the recessed portion, a connection pad inside the recessed portion, a second chip in the recessed portion, the second semiconductor chip including a through via electrically connected to the connection pad, and a second ball land electrically connected to the through via. A semiconductor package may include a substrate having first and second surfaces, the second surface including a recessed portion, a first semiconductor chip mounted on the first surface, a first ball land outside the recessed portion, a connection pad inside the recessed portion, a second semiconductor chip in the recessed portion, the second chip including a through via electrically connected to the connection pad, and a second ball land electrically connected to the through via.