摘要:
A method of manufacture of an integrated circuit packaging system includes: providing a first substrate; mounting a component over the first substrate; mounting a stack substrate over the component, the stack substrate having an inner pad and an outer pad connected to the first substrate; mounting a first exposed interconnect on the outer pad; forming a first encapsulation over the stack substrate, the first exposed interconnect partially exposed and the inner pad partially exposed in a recess of the first encapsulation; and mounting a second exposed interconnect on the inner pad.
摘要:
A method of manufacture of an integrated circuit packaging system includes providing an integrated circuit having an active side and a non-active side; forming a channel through the integrated circuit; forming an indent, having a flange and an indent side, from a peripheral region of the non-active side; and forming a conformal interconnect, having an offset segment, a sloped segment, and a flange segment, under the indent.
摘要:
In a method for measuring jitter, a signal under test is inputted to generate signal transition locations. A signal transition location is latched using a sampling clock signal, and the signal transition location is converted to a delay value. The delay value is converted to an edge position output, and a value of the edge position output is detected.
摘要:
The present invention provides an integrated circuit package system with die on base package comprising forming a base package comprising, forming a substrate, mounting a first integrated circuit on the substrate, encapsulating the integrated circuit and the substrate with a molding compound, and testing the base package, attaching a bare die to the base package, connecting electrically the bare die to the substrate and encapsulating the bare die and the base package.
摘要:
An integrated circuit package system includes: forming a die-attach paddle, an outer interconnect, and an inner interconnect toward the die-attach paddle beyond the outer interconnect; mounting an integrated circuit device over the die-attach paddle; connecting the integrated circuit device to the inner interconnect and the outer interconnect; encapsulating the integrated circuit device over the die-attach paddle; attaching an external interconnect under the outer interconnect; and attaching a circuit device under the die-attach paddle and extended laterally beyond opposite sides of the die-attach paddle.
摘要:
An integrated circuit system comprising: forming a differential amplifier including: forming a first transistor, coupling a second transistor to the first transistor in a high gain configuration, and coupling a third transistor, having a low gain configuration, in parallel with the second transistor; and adjusting a gain of the differential amplifier by adjusting a ratio of the size of the second transistor to the size of the first transistor.
摘要:
A bump chip carrier semiconductor package system is provided including providing a lead frame, forming circuit sockets in the lead frame, mounting a semiconductor die on the lead frame, wherein the semiconductor die have electrical interconnects that connects to the circuit sockets, and encapsulating a molding compound to cover the semiconductor die and the electrical interconnects.
摘要:
A ball grid array package system comprising: forming a package base including: fabricating a heat spreader having an access port, attaching an integrated circuit die to the heat spreader, mounting a substrate around the integrated circuit die, and coupling an electrical interconnect between the integrated circuit die and the substrate; and coupling a second integrated circuit package to the substrate through the access port.
摘要:
A method for determination of tunnel oxide weakness is provided. A tunnel oxide layer is formed on a semiconductor wafer. At least one poly gate is formed on the tunnel oxide layer in a flash memory region of the semiconductor wafer. At least one poly island, which is substantially larger than the poly gate, is formed on the tunnel oxide layer in a voltage contrast cell region of the semiconductor wafer. The poly island and the tunnel oxide layer therebeneath form a voltage contrast tunnel oxide cell. A voltage contrast measurement is performed on the voltage contrast tunnel oxide cell. The voltage contrast measurement is then compared with prior such voltage contrast measurements on other such voltage contrast tunnel oxide cells. The tunnel oxide weakness of the tunnel oxide layer is then determined from the voltage contrast measurement comparisons.
摘要:
A processing system is provided for processing signals in a processor system including first and second conjoined-cores, and sharing a single floating point unit or a single memory interconnection network port by the first and second conjoined-cores.