Method and apparatus for measuring jitter
    3.
    发明授权
    Method and apparatus for measuring jitter 有权
    用于测量抖动的方法和装置

    公开(公告)号:US07236555B2

    公开(公告)日:2007-06-26

    申请号:US10826198

    申请日:2004-04-15

    申请人: Symon Brewer

    发明人: Symon Brewer

    CPC分类号: H04L1/205

    摘要: In a method for measuring jitter, a signal under test is inputted to generate signal transition locations. A signal transition location is latched using a sampling clock signal, and the signal transition location is converted to a delay value. The delay value is converted to an edge position output, and a value of the edge position output is detected.

    摘要翻译: 在测量抖动的方法中,输入被测信号以产生信号转换位置。 使用采样时钟信号锁存信号转换位置,并将信号转换位置转换为延迟值。 将延迟值转换为边缘位置输出,并检测边缘位置输出的值。

    Integrated circuit system for controlling amplifier gain
    6.
    发明授权
    Integrated circuit system for controlling amplifier gain 有权
    用于控制放大器增益的集成电路系统

    公开(公告)号:US07750736B2

    公开(公告)日:2010-07-06

    申请号:US12109754

    申请日:2008-04-25

    申请人: Philip W. Yee

    发明人: Philip W. Yee

    IPC分类号: H03F3/45

    摘要: An integrated circuit system comprising: forming a differential amplifier including: forming a first transistor, coupling a second transistor to the first transistor in a high gain configuration, and coupling a third transistor, having a low gain configuration, in parallel with the second transistor; and adjusting a gain of the differential amplifier by adjusting a ratio of the size of the second transistor to the size of the first transistor.

    摘要翻译: 一种集成电路系统,包括:形成差分放大器,包括:形成第一晶体管,以高增益配置将第二晶体管耦合到第一晶体管,以及耦合具有低增益配置的第三晶体管,与第二晶体管并联; 以及通过调节所述第二晶体管的尺寸与所述第一晶体管的尺寸的比率来调整所述差分放大器的增益。

    In-line voltage contrast determination of tunnel oxide weakness in integrated circuit technology development
    9.
    发明授权
    In-line voltage contrast determination of tunnel oxide weakness in integrated circuit technology development 失效
    集成电路技术开发中隧道氧化物薄弱的在线电压对比度测定

    公开(公告)号:US07101722B1

    公开(公告)日:2006-09-05

    申请号:US10839444

    申请日:2004-05-04

    IPC分类号: H01L21/00

    摘要: A method for determination of tunnel oxide weakness is provided. A tunnel oxide layer is formed on a semiconductor wafer. At least one poly gate is formed on the tunnel oxide layer in a flash memory region of the semiconductor wafer. At least one poly island, which is substantially larger than the poly gate, is formed on the tunnel oxide layer in a voltage contrast cell region of the semiconductor wafer. The poly island and the tunnel oxide layer therebeneath form a voltage contrast tunnel oxide cell. A voltage contrast measurement is performed on the voltage contrast tunnel oxide cell. The voltage contrast measurement is then compared with prior such voltage contrast measurements on other such voltage contrast tunnel oxide cells. The tunnel oxide weakness of the tunnel oxide layer is then determined from the voltage contrast measurement comparisons.

    摘要翻译: 提供了一种确定隧道氧化物弱化的方法。 在半导体晶片上形成隧道氧化物层。 在半导体晶片的闪存区域中的隧道氧化物层上形成至少一个多晶硅栅极。 在半导体晶片的电压对比单元区域中的隧道氧化物层上形成至少一个大于多晶硅栅极的多晶硅岛。 其上的多岛和隧道氧化物层形成电压对比隧道氧化物电池。 对电压对比度隧道氧化物电池进行电压对比度测量。 然后将电压对比度测量与其他这样的电压对比隧道氧化物电池的先前的这种电压对比度测量进行比较。 然后从电压对比度测量比较确定隧道氧化物层的隧道氧化物弱点。