公开(公告)号：US20090006560A1

公开(公告)日：2009-01-01

申请号：US11769243

申请日：2007-06-27

Applicant: Kulvir S. Bhogal ,  John J. Duigenan ,  Kwang S. Kang ,  Paul D. Lewis ,  Ravi Ravisankar ,  John J. Wang

Inventor： Kulvir S. Bhogal ,  John J. Duigenan ,  Kwang S. Kang ,  Paul D. Lewis ,  Ravi Ravisankar ,  John J. Wang

IPC: G06F15/16

CPC classification number: G06Q10/107

Abstract: Methods, systems, and products are disclosed for terminating an application message subscription that include: receiving, by messaging middleware of a subscribing client device, application messages having one or more message topics on one or more message streams from one or more message transmitting devices; receiving, by the messaging middleware from a stream administration server, a subscription termination message specifying a particular message topic for application messages that the subscription client device is no longer authorized to receive; and ceasing, by the messaging middleware, to provide the received application messages having the particular message topic to an application on the subscribing client device, including providing the received application messages having other message topics to the application.

Abstract translation: 公开了用于终止应用消息订阅的方法，系统和产品，其包括：通过订阅客户端设备的消息中间件从一个或多个消息发送设备接收在一个或多个消息流上具有一个或多个消息主题的应用消息; 通过消息中间件从流管理服务器接收订阅终止消息，其指定订阅客户端设备不再被授权接收的应用消息的特定消息主题; 并且通过消息传递中间件停止将具有特定消息主题的接收到的应用消息提供给订阅客户端设备上的应用，包括向应用提供具有其他消息主题的接收到的应用消息。

公开(公告)号：US07137085B1

公开(公告)日：2006-11-14

申请号：US10858739

申请日：2004-06-01

Applicant: John J. Wang ,  Siu May Ho ,  Jeffrey P. Erhardt ,  Srikanth Sundararajan ,  David C. Newbury ,  Shivananda S. Shetty ,  Paul J. Steffan ,  Franklyn Shihyu Wu

Inventor： John J. Wang ,  Siu May Ho ,  Jeffrey P. Erhardt ,  Srikanth Sundararajan ,  David C. Newbury ,  Shivananda S. Shetty ,  Paul J. Steffan ,  Franklyn Shihyu Wu

IPC: G06F17/50

CPC classification number: G01R31/318314 ,  G01R31/31718 ,  G01R31/318511

Abstract: A system and method for wafer level global bitmap characterization include determining chip level defect data bitmaps from a semiconductor wafer, and consolidating the chip level defect data bitmaps into a global wafer level bitmap that characterizes substantially the entire wafer failure configuration. The global wafer level bitmap is then analyzed and compared with other global wafer level bitmaps to develop correlations thereamong and develop global wafer level bitmap definitions for conducting at least one of wafer-to-wafer, boat-to-boat, and lot-to-lot process analysis based upon the global wafer level bitmap definitions.

Abstract translation: 用于晶片级全局位图表征的系统和方法包括从半导体晶片确定芯片级缺陷数据位图，以及将芯片级缺陷数据位图合并到表征基本上整个晶片故障配置的全局晶片级位图中。 然后分析全球晶圆级位图并与其他全球晶圆级位图进行比较，以开发相关性，并开发全球晶圆级位图定义，用于进行晶圆到晶片，船对船和批次位图中的至少一个， 基于全球晶圆级位图定义的批量处理分析。

公开(公告)号：US5972749A

公开(公告)日：1999-10-26

申请号：US2783

申请日：1998-01-05

Applicant: John J. Wang ,  Yuesong He ,  Kent Kuohua Chang

Inventor： John J. Wang ,  Yuesong He ,  Kent Kuohua Chang

IPC: H01L21/02 ,  H01L21/314 ,  H01L21/8239 ,  H01L21/8238 ,  H01L21/8247

CPC classification number: H01L28/40 ,  H01L27/1052 ,  H01L21/3143 ,  Y10S438/97

Abstract: A method and apparatus for an integrated circuit on a semiconductor substrate having good metal contact points. A first polysilicon layer is formed onto the substrate, and is etched to provide contact regions to the substrate. An ONO layer is formed onto the first polysilicon layer. A second polysilicon layer is formed onto the ONO layer, and a metal silicide layer is formed onto the second polysilicon layer. The second polysilicon layer and the metal silicide layer are etched at particular locations in order to form contact regions to the first polysilicon layer and to the substrate. A selective layer is formed onto the second polysilicon layer, the selective layer being etch selective with respect to the first polysilicon layer. An interlayer dielectric is formed onto the selective layer. A first etching is performed to provide a contact path through the interlayer dielectric, and then a second etching is performed to provide a contact path through the selective layer. Based on these two contact paths, a contact point can be provided externally to the first polysilicon layer.

Abstract translation: 一种具有良好金属接触点的半导体衬底上集成电路的方法和装置。 第一多晶硅层形成在衬底上，并被蚀刻以提供与衬底的接触区域。 在第一多晶硅层上形成ONO层。 在ONO层上形成第二多晶硅层，在第二多晶硅层上形成金属硅化物层。 在特定位置蚀刻第二多晶硅层和金属硅化物层，以便形成与第一多晶硅层和衬底的接触区域。 选择层形成在第二多晶硅层上，选择层相对于第一多晶硅层具有蚀刻选择性。 在选择层上形成层间电介质。 执行第一蚀刻以提供通过层间电介质的接触路径，然后执行第二蚀刻以提供穿过选择层的接触路径。 基于这两个接触路径，可以在第一多晶硅层的外部设置接触点。

公开(公告)号：US20080141274A1

公开(公告)日：2008-06-12

申请号：US11609604

申请日：2006-12-12

Applicant: Kulvir S. Bhogal ,  Kenneth W. Borgendale ,  Paul D. Lewis ,  Ramanujam Ravisankar ,  John J. Wang

Inventor： Kulvir S. Bhogal ,  Kenneth W. Borgendale ,  Paul D. Lewis ,  Ramanujam Ravisankar ,  John J. Wang

IPC: G06F3/00

CPC classification number: G06F9/546 ,  G06F9/541 ,  G06F2209/547 ,  H04L67/02

Abstract: Methods, systems, and products for subscribing for application messages in a multicast messaging environment as disclosed that include: requesting, by a message receiving device, a stream administration server to initialize a message subscription for application messages from a message sending device; receiving, in the message receiving device from the stream administration server, a data communications endpoint of a multicast message stream from the message sending device; beginning to listen, by the message receiving device, for the application messages at the data communications endpoint; and notifying, by the message receiving device after beginning to listen for the application messages, the message sending device to publish the application messages at the data communications endpoint.

Abstract translation: 用于在多播消息传送环境中订阅应用消息的方法，系统和产品，其包括：由消息接收设备请求流管理服务器以从消息发送设备初始化应用消息的消息订阅; 在来自流管理服务器的消息接收设备中从消息发送设备接收多播消息流的数据通信端点; 开始通过消息接收装置监听数据通信端点处的应用消息; 并且在开始收听应用消息之后通过消息接收设备通知消息发送设备在数据通信端点发布应用消息。

公开(公告)号：US08850451B2

公开(公告)日：2014-09-30

申请号：US11609604

申请日：2006-12-12

Applicant: Kulvir S. Bhogal ,  Kenneth W. Borgendale ,  Paul D. Lewis ,  Ramanujam Ravisankar ,  John J. Wang

Inventor： Kulvir S. Bhogal ,  Kenneth W. Borgendale ,  Paul D. Lewis ,  Ramanujam Ravisankar ,  John J. Wang

IPC: G06F3/00 ,  G06F15/16 ,  H04L29/08 ,  G06F9/54

CPC classification number: G06F9/546 ,  G06F9/541 ,  G06F2209/547 ,  H04L67/02

Abstract: Methods, systems, and products for subscribing for application messages in a multicast messaging environment as disclosed that include: requesting, by a message receiving device, a stream administration server to initialize a message subscription for application messages from a message sending device; receiving, in the message receiving device from the stream administration server, a data communications endpoint of a multicast message stream from the message sending device; beginning to listen, by the message receiving device, for the application messages at the data communications endpoint; and notifying, by the message receiving device after beginning to listen for the application messages, the message sending device to publish the application messages at the data communications endpoint.

Abstract translation: 用于在多播消息传送环境中订阅应用消息的方法，系统和产品，其包括：由消息接收设备请求流管理服务器以从消息发送设备初始化应用消息的消息订阅; 在来自流管理服务器的消息接收设备中从消息发送设备接收多播消息流的数据通信端点; 开始通过消息接收装置监听数据通信端点处的应用消息; 并且在开始收听应用消息之后通过消息接收设备通知消息发送设备在数据通信端点发布应用消息。

公开(公告)号：US20090006559A1

公开(公告)日：2009-01-01

申请号：US11769240

申请日：2007-06-27

Applicant: Kulvir S. Bhogal ,  John J. Duigenan ,  Kwang S. Kang ,  Paul D. Lewis ,  Ravi Ravisankar ,  John J. Wang

Inventor： Kulvir S. Bhogal ,  John J. Duigenan ,  Kwang S. Kang ,  Paul D. Lewis ,  Ravi Ravisankar ,  John J. Wang

IPC: G06F15/16

CPC classification number: G06Q10/107 ,  H04L12/1818

Abstract: Methods, systems, and products are disclosed for application message subscription tracking in a high speed, low latency data communications environment that includes: receiving, by a stream administration server from a subscribing client device, a subscription initiation request, the subscription initiation request specifying a message topic, the message topic specifying application messages for transmission to the subscribing client device from a message transmitting device; brokering, by the stream administration server, establishment of a message stream that provides the application messages for the specified message topic from the message transmitting device to the subscribing client device; and updating, by the stream administration server, a client subscription repository for monitoring application message subscriptions in dependence upon the subscription initiation request.

Abstract translation: 公开了用于在高速，低延迟数据通信环境中的应用消息订阅跟踪的方法，系统和产品，其包括：来自订阅客户端设备的流管理服务器接收订阅发起请求，所述订阅启动请求指定 消息主题，消息主题，指定从消息发送设备发送到订阅客户端设备的应用消息; 通过流管理服务器代理建立从消息发送设备向订阅客户端设备提供用于指定消息主题的应用消息的消息流; 以及由流管理服务器更新根据订阅启动请求来监视应用消息订阅的客户端订阅存储库。

公开(公告)号：US07101722B1

公开(公告)日：2006-09-05

申请号：US10839444

申请日：2004-05-04

Applicant: John J. Wang ,  Jeffrey P. Erhardt ,  Wiley Eugene Hill

Inventor： John J. Wang ,  Jeffrey P. Erhardt ,  Wiley Eugene Hill

IPC: H01L21/00

CPC classification number: G01R31/307 ,  G01R31/2831 ,  G11C16/04 ,  G11C29/006 ,  G11C29/50 ,  G11C29/56 ,  G11C29/56008 ,  G11C2029/0403 ,  G11C2029/4002 ,  G11C2029/5004 ,  G11C2029/5602

Abstract: A method for determination of tunnel oxide weakness is provided. A tunnel oxide layer is formed on a semiconductor wafer. At least one poly gate is formed on the tunnel oxide layer in a flash memory region of the semiconductor wafer. At least one poly island, which is substantially larger than the poly gate, is formed on the tunnel oxide layer in a voltage contrast cell region of the semiconductor wafer. The poly island and the tunnel oxide layer therebeneath form a voltage contrast tunnel oxide cell. A voltage contrast measurement is performed on the voltage contrast tunnel oxide cell. The voltage contrast measurement is then compared with prior such voltage contrast measurements on other such voltage contrast tunnel oxide cells. The tunnel oxide weakness of the tunnel oxide layer is then determined from the voltage contrast measurement comparisons.

Abstract translation: 提供了一种确定隧道氧化物弱化的方法。 在半导体晶片上形成隧道氧化物层。 在半导体晶片的闪存区域中的隧道氧化物层上形成至少一个多晶硅栅极。 在半导体晶片的电压对比单元区域中的隧道氧化物层上形成至少一个大于多晶硅栅极的多晶硅岛。 其上的多岛和隧道氧化物层形成电压对比隧道氧化物电池。 对电压对比度隧道氧化物电池进行电压对比度测量。 然后将电压对比度测量与其他这样的电压对比隧道氧化物电池的先前的这种电压对比度测量进行比较。 然后从电压对比度测量比较确定隧道氧化物层的隧道氧化物弱点。

公开(公告)号：US06331954B1

公开(公告)日：2001-12-18

申请号：US09894777

申请日：2001-06-28

Applicant: John J. Wang ,  Jiang Li ,  Yider Wu

Inventor： John J. Wang ,  Jiang Li ,  Yider Wu

IPC: G11C1634

CPC classification number: G11C29/50 ,  G11C16/04 ,  G11C29/24 ,  G11C2029/5002 ,  G11C2029/5006

Abstract: For electrically determining the level of misalignment of floating gate structures closest to a gate stack bending point in an array of flash memory cells, a plurality of test flash memory cells are formed with each test flash memory cell having a respective floating gate structure designed to be disposed a respective displacement distance from a respective gate stack bending point. An erase operation is performed for each of the test flash memory cells by biasing the test flash memory cells with voltages from a plurality of voltage sources. Each of the test flash memory cells are then biased with test voltages from the plurality of voltage sources. A respective current meter then measures a respective amount of current flowing through each of the test flash memory cells when biased with the test voltages. The level of misalignment is determined depending on which of the test flash memory cells conducts a current level that is greater than a threshold current level when biased with the test voltages. The level of misalignment is approximately equal to a highest one of the respective displacement distance corresponding to one of the test flash memory cells that conducts a current level that is greater than the threshold current level.

Abstract translation: 为了电气地确定最靠近闪速存储器单元阵列中的栅堆叠弯曲点的浮栅结构的未对准电平，形成多个测试闪存单元，每个测试闪速存储单元具有相应的浮栅结构，其设计为 从相应的栅堆叠弯曲点设置相应的位移距离。 通过利用来自多个电压源的电压偏置测试闪存单元，对每个测试闪存单元执行擦除操作。 然后每个测试闪存单元被来自多个电压源的测试电压偏置。 然后，相应的电流表随着测试电压的偏差测量流过每个测试闪存单元的相应电流量。 根据测试闪速存储器单元中的哪一个导通当被测试电压偏置时大于阈值电流电平的电流电平来确定未对准电平。 未对准的电平近似等于对应于传导大于阈值电流电平的电流电平的测试闪存单元之一的相应位移距离中的最高一个。

公开(公告)号：US06177316B1

公开(公告)日：2001-01-23

申请号：US09412278

申请日：1999-10-05

Applicant: Yue-Song He ,  Kent K. Chang ,  John J. Wang

Inventor： Yue-Song He ,  Kent K. Chang ,  John J. Wang

IPC: H01L21336

CPC classification number: H01L21/28273

Abstract: An improved method for fabricating a NAND-type memory cell structure. The present invention forgoes providing a contact mask implantation process prior to deposition of a metal barrier layer, which is a typical order of processing the NAND-type memory cell. Instead, in the present invention, the metal barrier layer is deposited on a core area of the NAND-type memory cell prior to contact mask implantation. Thereafter, the contact mask implantation process is performed on the structure in a conventional manner.

Abstract translation: 一种用于制造NAND型存储单元结构的改进方法。 本发明放弃在沉积金属阻挡层之前提供接触掩模注入工艺，这是处理NAND型存储单元的典型顺序。 相反，在本发明中，在接触掩模植入之前，将金属阻挡层沉积在NAND型存储单元的核心区域上。 此后，以常规方式对结构进行接触掩模注入工艺。

公开(公告)号：US6066873A

公开(公告)日：2000-05-23

申请号：US271330

申请日：1999-03-18

Applicant: John J. Wang ,  Yuesong He ,  Kent Kuohua Chang

Inventor： John J. Wang ,  Yuesong He ,  Kent Kuohua Chang

IPC: H01L21/02 ,  H01L21/314 ,  H01L21/8239 ,  H01L39/78

CPC classification number: H01L28/40 ,  H01L27/1052 ,  H01L21/3143 ,  Y10S438/97

Abstract: A method and apparatus for an integrated circuit on a semiconductor substrate having good metal contact points. A first polysilicon layer is formed onto the substrate, and is etched to provide contact regions to the substrate. An ONO layer is formed onto the first polysilicon layer. A second polysilicon layer is formed onto the ONO layer, and a metal silicide layer is formed onto the second polysilicon layer. The second polysilicon layer and the metal silicide layer are etched at particular locations in order to form contact regions to the first polysilicon layer and to the substrate. A selective layer is formed onto the second polysilicon layer, the selective layer being etch selective with respect to the first polysilicon layer. An interlayer dielectric is formed onto the selective layer. A first etching is performed to provide a contact path through the interlayer dielectric, and then a second etching is performed to provide a contact path through the selective layer. Based on these two contact paths, a contact point can be provided externally to the first polysilicon layer.

Abstract translation: 一种具有良好金属接触点的半导体衬底上集成电路的方法和装置。 第一多晶硅层形成在衬底上，并被蚀刻以提供与衬底的接触区域。 在第一多晶硅层上形成ONO层。 在ONO层上形成第二多晶硅层，在第二多晶硅层上形成金属硅化物层。 在特定位置蚀刻第二多晶硅层和金属硅化物层，以便形成与第一多晶硅层和衬底的接触区域。 选择层形成在第二多晶硅层上，选择层相对于第一多晶硅层具有蚀刻选择性。 在选择层上形成层间电介质。 执行第一蚀刻以提供通过层间电介质的接触路径，然后执行第二蚀刻以提供穿过选择层的接触路径。 基于这两个接触路径，可以在第一多晶硅层的外部设置接触点。