摘要:
Methods and devices are disclosed for evaluating the imaging performance of a charged-particle-beam (CPB) microlithography system. An embodiment of such a device includes a knife-edged pattern region defining multiple knife-edged apertures that are longitudinally extended. Each aperture includes a respective knife-edge on each of its two respective longitudinal edges. A charged particle beam having a rectangular transverse profile is scanned across the apertures such that the beam reaches a knife-edge on an adjacent aperture before the previous knife-edge exhibits radiation-induced deterioration. Furthermore, each of the knife-edges can be swept multiple times by respective beam scans performed at different locations in the longitudinal direction. Hence, measurements can be performed many times (e.g., hundreds of times) using a single knife-edged pattern region.
摘要:
An optical system for a particle beam device such as an electron microscope, e-beam device or FIB device, including a particle beam column having an optical axis along which a beam of particles is projected and an apertured plate positioned in the column having an aperture which is coaxial with the optical axis, the plate being moveable in a direction which is parallel to the optical axis.
摘要:
A conical shaped baffle aperture reduces beam position drift due to electrostatic charging of insulating contamination layers on beam tube walls of a charged particle beam system. The geometric cone angle, aperture size and apex location of the baffle with respect to the source of contamination and secondary radiation are selected so that the inner walls of the baffle and the beam itself are invisible from the source, and therefore remain free of the insulating contamination layers that would otherwise cause charging drift.
摘要:
A slit assembly for use in a charged particle beam system wherein a charged particle beam is directed along a beam path. The slit assembly may be a mass resolving slit assembly for an ion implanter. The slit assembly includes first and second cylinders spaced apart from each other. Opposing surfaces of the first and second cylinders adjacent to the beam path define a slit for passing the charged particle beam. The first and second cylinders have first and second central axes, respectively. The slit assembly further includes a drive system for rotating the first cylinder about the first central axis and for rotating the second cylinder about the second central axis. The slit assembly provides low contamination and a long operating life. The slit assembly may include a system for adjusting the width of the slit. The slit assembly may further include a cooling system for controlling the temperatures of the first and second cylinders.
摘要:
An electron beam shaping mask for an electron beam with pattern writing capability, includes a substrate with various opening patterns and metallic films, which are respectively formed on top- and bottom-surfaces of the substrate. The metallic films serve as foundation metallic layers. According to the structure, a total thickness of the metallic layer is divided into the two thin metallic films. Since the substrate is protected from both sides by the metallic films, its thickness can be made to be thin. Therefore, a highly accurate patterning can be easily performed, and thermal stresses can be decreased and exfoliations of the metallic films can be avoided.
摘要:
Spurious electrodynamic effects are reduced or eliminated by the use of a mechanically compact, low capacitance, geometrically symmetric, differentially-driven blanker assembly. This eliminates the need for internal cables or SMA-type launchers and has a solid metal electromechanical contact to system ground.
摘要:
Deflection apparatus is shown for high perveance ion beams, operating at 20 Hz fundamental and substantially higher order harmonics, having a magnetic structure formed of laminations with thickness in range between 0.2 and 1 millimeter. Additionally, a compensator is shown with similar laminated structures with resonant excitation circuit, operating at 20 Hz or higher, in phase locked relationship with the frequency of the previously deflected beam. Furthermore, features are shown which have broader applicability to producing strong magnetic field in magnetic gap. Among the numerous important features shown are special laminated magnetic structures, including different sets of crosswise laminations in which the field in one lamination of one set is distributed into multiplicity of laminations of the other set of coil-form structures, field detection means and feedback control system, cooling plate attached in thermal contact with number of lamination layers. Surfaces on the entry and exit sides of the compensator magnetic structure have cooperatively selected shapes to increase the length of path exposed to the force field dependently with deflection angle to compensate for contribution to deflection angle caused by higher order components. The entry and exit surfaces of the magnetic scanner and compensator structures cooperating to produce desired beam profile and desired limit on angular deviation of ions within the beam. Also shown is an accelerator comprising a set of accelerator electrodes having slotted apertures, a suppressor electrode at the exit of the electrostatic accelerator, a post-accelerator analyzer magnet having means for adjusting the angle of incidence by laterally moving the post-accelerator analyzer magnet, and a magnet to eliminate aberration created by the post-accelerator analyzer magnet. In the case of use of a spinning substrate carrier for scanning in one dimension, the excitation wave form of the scanner relates changes in scan velocity in inverse dependence with changes in the radial distance of an implant point from the rotation axis. Also an oxygen implantation method is shown with 50 mA ion beam current, the ion beam energy above 100 KeV, and the angular velocity of a rotating carrier above 50 rpm.
摘要:
A defining aperture for an ion implanter in which wafers are implanted at high tilt angles, which aperture is configured to project a substantially circular beam pattern on the surface of the tilted wafer. One embodiment includes one or more movable aperture plates having elliptical apertures formed therein operating in conjunction with a fixed aperture plate having a circular aperture. Other embodiments include movable elliptical apertures, and a circular aperture rotatable about an axis perpendicular to the tilt axis of the wafer. Where an electron flood ring is used, one or more movable rings having elliptical apertures opening can be used.
摘要:
A spray aperture disk designed for insertion into a column liner of an electron microscope having a substantially circular shape, a plurality of tabs or extensions located on the circumferential periphery of the disk and a small central aperture. The disk is inserted into the tapered end of a column liner and then deformed by a tool which pushes the disk into position within the column liner. The disk may be removed by inserting a rod of appropriate length and width into the column liner and pushing the disks out. The disks are self centering and require no separate carrier. The disks are made from inexpensive materials and are disposable.
摘要:
This ion beam system provides an ion beam pattern which is produced without the need for a mask. A programmable grid is used in combination with an ion beam source, where the apertures of the programmable grid can have electrical potentials associated therewith which either extract ions or impede the movement of ions through the apertures. Depending upon the electrical biasing provided to each of the apertures of the grid, different patterns of ions can be extracted through the grid. By changing the electrical bias at different locations on the programmable grid, these different patterns are produced. The patterns can be used for many applications, including patterned deposition, patterned etching, and patterned treatment of surfaces.