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    SEMICONDUCTOR DEVICE
    83.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20170018479A1

    公开(公告)日：2017-01-19

    申请号：US15168242

    申请日：2016-05-30

    申请人： Samsung Electronics Co., Ltd.

    发明人： Hyun-Chul SAGONG ,  Sang-Woo PAE ,  Seung-Jin CHOO

    IPC分类号： H01L23/367 ,  H01L29/423 ,  H01L29/06 ,  H01L27/092 ,  H01L23/373

    CPC分类号： H01L23/367 ,  B82Y10/00 ,  H01L23/3731 ,  H01L23/3738 ,  H01L27/0211 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66469 ,  H01L29/66772 ,  H01L29/775 ,  H01L29/78603 ,  H01L29/78654 ,  H01L29/78684 ,  H01L29/78696

    摘要： A semiconductor device includes a substrate, a thermal conduction layer on the substrate, a first wire pattern on the thermal conduction layer, a first semiconductor pattern a second semiconductor pattern, and a gate electrode between the first semiconductor pattern and the second semiconductor pattern. The gate electrode surrounds a periphery of the first wire pattern. A concentration of impurity of the thermal conduction layer is different from that of the substrate. The first wire pattern includes a first end and a second end. The concentration of impurity contained in the first wire pattern is higher than that contained in the thermal conduction layer and that contained in the substrate. The first semiconductor pattern is in contact with the first end of the first wire pattern and the thermal conduction layer. The second semiconductor pattern is in contact with the second end of the first wire pattern.

    摘要翻译： 半导体器件包括衬底，衬底上的导热层，导热层上的第一布线图案，第一半导体图案，第二半导体图案以及第一半导体图案和第二半导体图案之间的栅电极。 栅电极围绕第一线图案的周边。 导热层的杂质浓度与基板的杂质浓度不同。 第一线图案包括第一端和第二端。 包含在第一线图案中的杂质的浓度高于在导热层中包含的和包含在基底中的杂质的浓度。 第一半导体图案与第一布线图案的第一端和导热层接触。 第二半导体图案与第一线图案的第二端接触。

    Method and system for magnetic semiconductor solid state cooling
    90.
    发明授权
    Method and system for magnetic semiconductor solid state cooling 有权
    磁性半导体固态冷却方法与系统

    公开(公告)号：US09400127B2

    公开(公告)日：2016-07-26

    申请号：US14404740

    申请日：2013-05-30

    申请人： The Royal Institution for the Advancement of Learning/McGill University

    发明人： Guillaume Gervais ,  Thomas Szkopek ,  Jonathan Guillemette

    IPC分类号： F25B21/00 ,  H01L23/38 ,  H01L35/28 ,  H01L23/373 ,  H01L23/34

    CPC分类号： F25B21/00 ,  F25B2321/002 ,  H01L23/34 ,  H01L23/3738 ,  H01L23/38 ,  H01L35/28 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Cryogenic electronics based upon semiconductive devices, superconductive devices, or a combination of the two present opportunities for a wide variety of novel, fast, and low power devices. However, such cryogenic electronics require cooling which is typically achieved through fluid refrigerants such as liquid nitrogen or liquid helium. Solid state refrigeration based upon adiabatic demagnetization in paramagnetic salts offers one alternative but requires that the solid state cooler and cryogenic electronic circuits be different physical elements. The inventors present solid state cooling for semiconductor materials including but not limited to silicon. Beneficially active electronic devices can be integrated monolithically with solid state semiconductor coolers exhibiting magnetic cooling within the whole substrate or predetermined regions of the substrate. Alternatively, active devices may be formed with semiconductor layers integral to them that exhibit magnetic cooling.

    摘要翻译： 基于半导体器件，超导器件的低温电子器件，或为各种新颖，快速和低功耗器件的两种现有机会的组合。 然而，这种低温电子器件需要通常通过诸如液氮或液氦的流体制冷剂来实现的冷却。 基于顺磁盐绝热消磁的固态制冷提供了一种选择，但要求固态冷却器和低温电子电路是不同的物理元件。 本发明人为包括但不限于硅的半导体材料提供固态冷却。 有益的有源电子器件可以与在整个衬底或衬底的预定区域内呈现磁性冷却的固态半导体冷却器整体集成。 或者，有源器件可以形成有与它们成一体的具有磁冷却的半导体层。