公开(公告)号：US07547899B2

公开(公告)日：2009-06-16

申请号：US11445677

申请日：2006-06-02

Applicant: John W. Vanderpot ,  Yongzhang Huang

Inventor： John W. Vanderpot ,  Yongzhang Huang

IPC: G21K5/10 ,  H01J37/08

CPC classification number: H01J37/244 ,  H01J37/045 ,  H01J37/09 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/026 ,  H01J2237/028 ,  H01J2237/30433 ,  H01J2237/31705

Abstract: A system, method, and apparatus for mitigating contamination during ion implantation are provided. An ion source, end station, and mass analyzer positioned between the ion source and the end station are provided, wherein an ion beam is formed from the ion source and travels through the mass analyzer to the end station. An ion beam dump assembly comprising a particle collector, particle attractor, and shield are associated with the mass analyzer, wherein an electrical potential of the particle attractor is operable to attract and constrain contamination particles within the particle collector, and wherein the shield is operable to shield the electrical potential of the particle attractor from an electrical potential of an ion beam within the mass analyzer.

Abstract translation: 提供了一种用于减少离子注入期间污染的系统，方法和装置。 提供了位于离子源和终端之间的离子源，端站和质量分析器，其中离子束由离子源形成并通过质量分析器传送到终端站。 包括粒子收集器，颗粒吸引子和屏蔽的离子束转储组件与质量分析器相关联，其中，所述粒子吸引子的电位可操作以吸引和约束所述颗粒收集器内的污染颗粒，并且其中所述屏蔽件可操作为 屏蔽质子分析仪内离子束电位的吸引子的电位。

公开(公告)号：US07544958B2

公开(公告)日：2009-06-09

申请号：US11728020

申请日：2007-03-23

Applicant: Russell John Low

Inventor： Russell John Low

IPC: H01J37/317

CPC classification number: H01J37/05 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/057 ,  H01J2237/31705

Abstract: A method includes generating an ion beam having ions at a first charge state, accelerating the ions at the first charge state to a final energy, altering the first charge state to a second charge state for some of said ions, the second charge state less than the first charge state, providing an ion beam having ions at the second charge state and parasitic beamlets having ions at a charge state different than the second charge state, directing the ion beam having ions at the second charge state towards a wafer, and directing the parasitic beamlets away from the wafer. An ion implanter having a charge exchange apparatus is also provided.

Abstract translation: 一种方法包括产生具有处于第一充电状态的离子的离子束，将处于第一充电状态的离子加速到最终能量，将一些所述离子的第一充电状态改变为第二充电状态，第二充电状态小于 第一充电状态，提供具有处于第二充电状态的离子的离子束和具有不同于第二充电状态的充电状态的离子的寄生子束，将具有处于第二充电状态的离子的离子束引向晶片，并引导 寄生的子束远离晶片。 还提供了具有电荷交换装置的离子注入机。

公开(公告)号：US07528391B2

公开(公告)日：2009-05-05

申请号：US11615386

申请日：2006-12-22

Applicant: Russell J. Low

Inventor： Russell J. Low

IPC: G21K1/08

CPC classification number: H01J37/3171 ,  H01J37/09 ,  H01J2237/022 ,  H01J2237/024 ,  H01J2237/057 ,  H01J2237/31705 ,  H01J2237/31711

Abstract: Techniques for reducing contamination during ion implantation is disclosed. In one particular exemplary embodiment, the techniques may be realized by an apparatus for reducing contamination during ion implantation. The apparatus may comprise a platen to hold a workpiece for ion implantation by an ion beam. The apparatus may also comprise a mask, located in front of the platen, to block the ion beam and at least a portion of contamination ions from reaching a first portion of the workpiece during ion implantation of a second portion of the workpiece. The apparatus may further comprise a control mechanism, coupled to the platen, to reposition the workpiece to expose the first portion of the workpiece for ion implantation.

Abstract translation: 公开了用于减少离子注入期间污染的技术。 在一个特定的示例性实施例中，可以通过用于减少离子注入期间的污染的装置来实现这些技术。 该装置可以包括用于通过离子束保持用于离子注入的工件的压板。 该设备还可以包括位于压板前面的掩模，以在工件的第二部分的离子注入期间阻挡离子束并且至少一部分污染物离子到达工件的第一部分。 该装置还可以包括耦合到压板的控制机构，以重新定位工件以暴露工件的第一部分用于离子注入。

公开(公告)号：US07482598B2

公开(公告)日：2009-01-27

申请号：US11567485

申请日：2006-12-06

Applicant: Russell J. Low ,  Jonathan Gerald England ,  Stephen E. Krause ,  Eric D. Hermanson

Inventor： Russell J. Low ,  Jonathan Gerald England ,  Stephen E. Krause ,  Eric D. Hermanson

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/09 ,  H01J37/15 ,  H01J37/18 ,  H01J37/302 ,  H01J37/3023 ,  H01J2237/0455 ,  H01J2237/0458 ,  H01J2237/1503 ,  H01J2237/182 ,  H01J2237/188 ,  H01J2237/30488 ,  H01J2237/31705 ,  H01L21/266

Abstract: Techniques for preventing parasitic beamlets from affecting ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for preventing parasitic beamlets from affecting ion implantation. The apparatus may comprise a controller that is configured to scan a spot beam back and forth, thereby forming an ion beam spanning a predetermined width. The apparatus may also comprise an aperture mechanism that, if kept stationary, allows the spot beam to pass through. The apparatus may further comprise a synchronization mechanism, coupled to the controller and the aperture mechanism, that is configured to cause the aperture mechanism to move in synchronization with the scanned spot beam, allowing the scanned spot beam to pass through but blocking one or more parasitic beamlets associated with the spot beam.

Abstract translation: 公开了用于防止寄生子束影响离子注入的技术。 在一个特定的示例性实施例中，技术可以被实现为用于防止寄生子束影响离子注入的装置。 该装置可以包括配置成来回扫描点波束的控制器，从而形成横跨预定宽度的离子束。 该装置还可以包括孔机构，如果保持静止，则允许点束通过。 该装置还可以包括耦合到控制器和孔机构的同步机构，其被配置为使得孔径机构与扫描的点光束同步地移动，允许扫描的光束穿过但阻挡一个或多个寄生 与点光束相关的子束。

公开(公告)号：US07429743B2

公开(公告)日：2008-09-30

申请号：US11202111

申请日：2005-08-12

Applicant: Mitsuaki Kabasawa ,  Mitsukuni Tsukihara

Inventor： Mitsuaki Kabasawa ,  Mitsukuni Tsukihara

IPC: H01L49/00

CPC classification number: H01J37/3171 ,  H01J27/024 ,  H01J37/023 ,  H01J37/05 ,  H01J37/1474 ,  H01J37/1478 ,  H01J37/15 ,  H01J37/3007 ,  H01J2237/0041 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/0458 ,  H01J2237/047 ,  H01J2237/0492 ,  H01J2237/061 ,  H01J2237/0835 ,  H01J2237/1536 ,  H01J2237/24405 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/30477 ,  H01J2237/31705

Abstract: The present invention is a method to enhance accuracy of irradiation with beam for an irradiation system with a beam. The irradiation system comprises a beam generation source, a mass analysis device, a beam transformer, a scanner which swings the beam reciprocally with high speed, a beam parallelizing device, an acceleration/deceleration device, an energy filtering device, and beam monitors. The beam transformer comprises a vertically focusing synchronized quadrupole electromagnet syQD and a horizontally focusing synchronized quadrupole electromagnet syQF. Consequently, it is possible to correct at least one of a deviation in beam divergence angle and a deviation in beam size within a range between a center trajectory and an outer trajectory after swinging of the beam by the scanner.

Abstract translation: 本发明是提高具有光束的照射系统的光束照射精度的方法。 照射系统包括光束产生源，质量分析装置，光束变换器，高速摆动光束的扫描器，光束并行化装置，加速/减速装置，能量过滤装置和光束监视器。 光束变换器包括垂直聚焦同步四极电磁体syQD和水平聚焦同步四极电磁体syQF。 因此，可以通过扫描仪摆动光束之后，在中心轨迹和外部轨迹之间的范围内校正光束发散角的偏差和光束尺寸的偏差中的至少一个。

公开(公告)号：US07417241B2

公开(公告)日：2008-08-26

申请号：US11319207

申请日：2005-12-28

Applicant: Junichi Koezuka ,  Hiroto Shinoda

Inventor： Junichi Koezuka ,  Hiroto Shinoda

IPC: G21K5/10 ,  G21G5/00 ,  A61N5/00

CPC classification number: H01J37/08 ,  C23C8/36 ,  H01J37/3171 ,  H01J2237/31705 ,  H01L21/265 ,  H01L27/1214 ,  H01L27/127

Abstract: An object of the present invention is to provide an ion implantation method for shortening a down time of an ion implantation apparatus after exposure of a chamber and for improving throughput and a method for manufacturing a semiconductor device. Specifically, the object of the invention is to provide an ion implantation method that can improve throughput during an ion implantation step of B and a method for manufacturing a semiconductor device. The ion implantation method comprises the steps of: introducing an impurity imparting p-type conductivity and H2O in an ion source; ionizing the impurity imparting p-type conductivity; and implanting into a semiconductor film.

Abstract translation: 本发明的目的是提供一种离子注入方法，用于缩短室内暴露后的离子注入装置的停机时间并提高生产量，以及制造半导体装置的方法。 具体地说，本发明的目的在于提供一种能够提高B的离子注入工序时的生产率的离子注入方法以及半导体装置的制造方法。 离子注入方法包括以下步骤：在离子源中引入赋予p型导电性的杂质和H 2 O 2; 电离杂质赋予p型导电性; 并植入半导体膜。

公开(公告)号：US07397049B2

公开(公告)日：2008-07-08

申请号：US11386596

申请日：2006-03-22

Applicant: Raymond Callahan ,  David Olson ,  Wilhelm P. Platow ,  Stanislav S. Todorov

Inventor： Raymond Callahan ,  David Olson ,  Wilhelm P. Platow ,  Stanislav S. Todorov

IPC: G01N23/00 ,  G21K5/10

CPC classification number: H01J37/3171 ,  H01J2237/1501 ,  H01J2237/24405 ,  H01J2237/24507 ,  H01J2237/24542 ,  H01J2237/2487 ,  H01J2237/30472 ,  H01J2237/30477 ,  H01J2237/31705

Abstract: A system, method and program product for determining parallelism of an ion beam using a refraction method, are disclosed. One embodiment includes determining a first test position of the ion beam while not exposing the ion beam to an acceleration/deceleration electrical field, determining a second test position of the ion beam while exposing the ion beam to an acceleration/deceleration electrical field, and determining the parallelism of the ion beam based on the first test position and the second test position. The acceleration/deceleration electrical field acts to refract the ion beam between the two positions when the beam is not parallel, hence magnifying any non-parallelism. The amount of refraction, or lateral shift, can be used to determine the amount of non-parallelism of the ion beam. An ion implanter system and adjustments of the ion implanter system based on the parallelism determination are also disclosed.

Abstract translation: 公开了一种使用折射方法确定离子束的平行度的系统，方法和程序产品。 一个实施例包括确定离子束的第一测试位置，同时不将离子束暴露于加速/减速电场，确定离子束的第二测试位置，同时将离子束暴露于加速/减速电场，以及确定 基于第一测试位置和第二测试位置的离子束的平行度。 当光束不平行时，加速/减速电场用于折射两个位置之间的离子束，从而放大任何非平行度。 折射量或横向偏移可用于确定离子束的非平行度。 还公开了一种离子注入机系统和基于并行度测定的离子注入机系统的调整。

公开(公告)号：US20080087846A1

公开(公告)日：2008-04-17

申请号：US11548295

申请日：2006-10-11

Applicant: W. Davis Lee ,  Neil K. Colvin

Inventor： W. Davis Lee ,  Neil K. Colvin

IPC: H01J37/08

CPC classification number: H01J37/3171 ,  H01J37/244 ,  H01J2237/24405 ,  H01J2237/24507 ,  H01J2237/24535 ,  H01J2237/31703 ,  H01J2237/31705

Abstract: A Faraday cup structure for use with a processing tool. The cup structure has a conductive strike plate coupled to a circuit for monitoring ions striking the strike plate to obtain an indication of the ion beam current. The electrically conductive strike plate is fronted by a mask for dividing an ion beam intercepting cross section into regions or segments. The mask including walls extending to the strike plate for impeding ions reaching the sensor and particles dislodged from the sensor from entering into the evacuated region of the processing tool.

Abstract translation: 法拉第杯结构，用于加工工具。 杯结构具有连接到电路的导电冲击板，用于监测撞击撞击板的离子以获得离子束电流的指示。 导电冲击板由用于将离子束截断截面分成区域或区段的掩模前面。 掩模包括延伸到冲击板的壁，用于阻止到达传感器的离子和从传感器移出的颗粒进入加工工具的抽空区域。

公开(公告)号：US20070278417A1

公开(公告)日：2007-12-06

申请号：US11778272

申请日：2007-07-16

Applicant: Thomas Horsky ,  John Williams

Inventor： Thomas Horsky ,  John Williams

IPC: H01J27/00

CPC classification number: H01J27/205 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/049 ,  H01J2237/063 ,  H01J2237/082 ,  H01J2237/31701 ,  H01J2237/31703 ,  H01J2237/31705

Abstract: Various aspects of the invention provide improved approaches and methods for efficiently: Vaporizing decaborane and other heat-sensitive materials via a novel vaporizer and vapor delivery system; Delivering a controlled, low-pressure drop flow of vapors, e.g. decaborane, into the ion source; Ionizing the decaborane into a large fraction of B10Hx+; Preventing thermal dissociation of decaborane; Limiting charge-exchange and low energy electron-induced fragmentation of B10Hx+; Operating the ion source without an arc plasma, which can improve the emittance properties and the purity of the beam; Operating the ion source without use of a strong applied magnetic field, which can improve the emittance properties of the beam; Using a novel approach to produce electron impact ionizations without the use of an arc discharge, by incorporation of an externally generated, broad directional electron beam which is aligned to pass through the ionization chamber to a thermally isolated beam dump; Providing production-worthy dosage rates of boron dopant at the wafer; Providing a hardware design that enables use also with other dopants, especially using novel hydride, dimer-containing, and indium- or antimony-containing temperature-sensitive starting materials, to further enhance the economics of use and production worthiness of the novel source design and in many cases, reducing the presence of contaminants; Matching the ion optics requirements of the installed base of ion implanters in the field; Eliminating the ion source as a source of transition metals contamination, by using an external and preferably remote cathode and providing an ionization chamber and extraction aperture fabricated of non-contaminating material, e.g. graphite, silicon carbide or aluminum; Enabling retrofit of the new ion source into the ion source design space of existing Bernas source-based ion implanters and the like or otherwise enabling compatibility with other ion source designs; Using a control system in retrofit installations that enables retention of the installed operator interface and control techniques with which operators are already familiar; Enabling convenient handling and replenishment of the solid within the vaporizer without substantial down-time of the implanter; Providing internal adjustment and control techniques that enable, with a single design, matching the dimensions and intensity of the zone in which ionization occurs to the beam line of the implanter and the requirement of the process at hand; Providing novel approaches, starting materials and conditions of operation that enable the making of future generations of semiconductor devices and especially CMOS source/drains and extensions, and doping of silicon gates.

公开(公告)号：US20070262262A1

公开(公告)日：2007-11-15

申请号：US11647924

申请日：2006-12-29

Applicant: Thomas Horsky ,  John Williams

Inventor： Thomas Horsky ,  John Williams

IPC: H01J3/14

CPC classification number: H01J37/3171 ,  C23C14/48 ,  H01J27/205 ,  H01J37/08 ,  H01J2237/047 ,  H01J2237/049 ,  H01J2237/063 ,  H01J2237/0812 ,  H01J2237/0815 ,  H01J2237/082 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/31701 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/823814

Abstract: Various aspects of the invention provide improved approaches and methods for efficiently: Vaporizing decaborane and other heat-sensitive materials via a novel vaporizer and vapor delivery system; Delivering a controlled, low-pressure drop flow of vapors, e.g. decaborane, into the ion source; Ionizing the decaborane into a large faction of B10Hx+; Preventing thermal dissociation of decaborane; Limiting charge-exchange and low energy electron-induced fragmentation of B10Hx+; Operating the ion source without an arc plasma, which can improve the emittance properties and the purity of the beam; Operating the ion source without use of a strong applied magnetic field, which can improve the emittance properties of the beam; Using a novel approach to produce electron impact ionizations without the use of an arc discharge, by incorporation of an externally generated, broad directional electron beam which is aligned to pass through the ionization chamber to a thermally isolated beam dump; Providing production-worthy dosage rates of boron dopant at the wafer; Providing a hardware design that enables use also with other dopants, especially using novel hydride, dimer-containing, and indium- or antimony-containing temperature-sensitive starting materials, to further enhance the economics of use and production worthiness of the novel source design and in many cases, reducing the presence of contaminants; Matching the ion optics requirements of the installed base of ion implanters in the field; Eliminating the ion source as a source of transition metals contamination, by using an external and preferably remote cathode and providing an ionization chamber and extraction aperture fabricated of non-contaminating material, e.g. graphite, silicon carbide or aluminum; Enabling retrofit of the new ion source into the ion source design space of existing Bernas source-based ion implanters and the like or otherwise enabling compatibility with other ion source designs; Using a control system in retrofit installations that enables retention of the installed operator interface and control techniques with which operators are already familiar; Enabling convenient handling and replenishment of the solid within the vaporizer without substantial down-time of the implanter; Providing internal adjustment and control techniques that enable, with a single design, matching the dimensions and intensity of the zone in which ionization occurs to the beam line of the implanter and the requirement of the process at hand; Providing novel approaches, starting materials and conditions of operation that enable the making of future generations of semiconductor devices and especially CMOS source/drains and extensions, and doping of silicon gates.