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369 条记录 (耗时 0.028 秒)

    MEMS DEVICE AND METHOD OF MANUFACTURING THE SAME
    83.
    发明申请
    MEMS DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    MEMS器件及其制造方法

    公开(公告)号：US20150259196A1

    公开(公告)日：2015-09-17

    申请号：US14476409

    申请日：2014-09-03

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Naofumi NAKAMURA

    IPC分类号： B81B7/00 ,  B81C1/00

    CPC分类号： B81B7/0038 ,  B81B7/0058 ,  B81B2201/0264 ,  B81C1/00285 ,  B81C1/00476 ,  G01L1/148 ,  G01L9/0073

    摘要： According to one embodiment, a MEMS device is disclosed. The device includes a substrate, a MEMS element provided on the substrate, a first film having a plurality of through holes. The first film and the substrate form a cavity containing the MEMS element. The device further includes a second film provided on the first film, a third film provided on the substrate, and including a first region and a second region outside the first region, the first region and the second region being different from each other in height from the substrate. The height from the substrate of the first region of the third film is lower than the height from the substrate of the second region of the third film.

    摘要翻译： 根据一个实施例，公开了一种MEMS器件。 该器件包括衬底，设置在衬底上的MEMS元件，具有多个通孔的第一膜。 第一膜和衬底形成包含MEMS元件的空腔。 所述装置还包括设置在所述第一膜上的第二膜，设置在所述基板上的第三膜，并且在所述第一区域的外侧包括第一区域和第二区域，所述第一区域和所述第二区域的高度彼此不同 底物。 从第三膜的第一区域的基板的高度低于从第三膜的第二区域的基板的高度。

    Voltage Tunability of Thermal Conductivity in Ferroelectric Materials
    84.
    发明申请
    Voltage Tunability of Thermal Conductivity in Ferroelectric Materials 有权
    铁电材料热导率的电压可调性

    公开(公告)号：US20150144588A1

    公开(公告)日：2015-05-28

    申请号：US14546147

    申请日：2014-11-18

    申请人： Patrick E. Hopkins ,  Sandia Corporation

    发明人： Jon Ihlefeld ,  Patrick Edward Hopkins

    IPC分类号： B05D5/00 ,  B05D7/24 ,  B05D3/00 ,  B05D3/14

    CPC分类号： C30B29/32 ,  B24B37/042 ,  B81C1/00476 ,  C09K13/00 ,  C30B29/22 ,  C30B29/24 ,  H01B1/00

    摘要： A method to control thermal energy transport uses mobile coherent interfaces in nanoscale ferroelectric films to scatter phonons. The thermal conductivity can be actively tuned, simply by applying an electrical potential across the ferroelectric material and thereby altering the density of these coherent boundaries to directly impact thermal transport at room temperature and above. The invention eliminates the necessity of using moving components or poor efficiency methods to control heat transfer, enabling a means of thermal energy control at the micro- and nano-scales.

    摘要翻译： 控制热能传输的方法使用纳米尺度铁电薄膜中的移动相干界面散射声子。 可以简单地通过在铁电材料上施加电势从而改变这些相干边界的密度直接影响在室温及以上的热传输，从而可以主动地调节热导率。 本发明消除了使用移动部件或不良效率方法来控制热传递的必要性，使得能够在微尺度和纳米尺度上进行热能控制。

    Micro-device on glass
    86.
    发明授权
    Micro-device on glass 有权
    微型玻璃装置

    公开(公告)号：US08911636B2

    公开(公告)日：2014-12-16

    申请号：US14040698

    申请日：2013-09-29

    申请人： Viswanadam Gautham

    发明人： Viswanadam Gautham

    IPC分类号： C23F1/00 ,  B44C1/22 ,  B81C1/00 ,  H01L21/00

    CPC分类号： B81C1/00341 ,  B81B2201/051 ,  B81B2203/0315 ,  B81B2203/0338 ,  B81C1/00476 ,  B81C2201/0107 ,  B81C2203/036 ,  H01L21/00

    摘要： A method of fabricating a micro-device having micro-features on glass is presented. The method includes the steps of preparing a first glass substrate, fabricating a metallic pattern on the first glass substrate, preparing a second glass substrate and providing one or more apertures on the second glass substrate, heating the first glass substrate and the second glass substrate with a controlled temperature raise, bonding the first glass substrate and the second glass substrate by applying pressure to form a bonded substrate, wherein the metallic pattern is embedded within the bonded substrate, cooling the bonded substrate with a controlled temperature drop and thereafter maintaining the bonded substrate at a temperature suitable for etching, etching the metallic pattern within the bonded substrate, wherein an etchant has access to the metallic pattern via the apertures, forming a void within the bonded substrate, wherein the void comprises micro-features.

    摘要翻译： 提出了一种在玻璃上制造具有微特征的微器件的方法。 该方法包括以下步骤：制备第一玻璃基板，在第一玻璃基板上制造金属图案，制备第二玻璃基板并在第二玻璃基板上提供一个或多个孔，加热第一玻璃基板和第二玻璃基板， 控制温度升高，通过施加压力来接合第一玻璃基板和第二玻璃基板以形成接合基板，其中金属图案嵌入在接合基板内，以受控的温度下降冷却接合基板，然后保持接合基板 在适于蚀刻的温度下蚀刻所述键合衬底内的所述金属图案，其中所述蚀刻剂经由所述孔进入所述金属图案，在所述键合衬底内形成空隙，其中所述空隙包括微特征。

    ELECTRICAL DEVICE INCLUDING A FUNCTIONAL ELEMENT IN A CAVITY
    87.
    发明申请
    ELECTRICAL DEVICE INCLUDING A FUNCTIONAL ELEMENT IN A CAVITY 审中-公开
    电气设备，包括一个功能元素在一个空间

    公开(公告)号：US20140353777A1

    公开(公告)日：2014-12-04

    申请号：US14462262

    申请日：2014-08-18

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Akihiro KOJIMA ,  Yoshiaki SUGIZAKI ,  Yoshiaki SHIMOOKA

    IPC分类号： B81B7/00

    CPC分类号： B81B7/0038 ,  B81B2201/0221 ,  B81B2203/04 ,  B81C1/00476

    摘要： A substrate includes a functional element. An insulating first film forms a cavity which stores the functional element, together with the substrate, and includes a plurality of through-holes. An insulating second film covers the plurality of through-holes, is formed on the first film, and has a gas permeability which is higher than that of the first film. An insulating third film is formed on the second film and has a gas permeability which is lower than the second film. An insulating fourth film is formed on the third film and has an elasticity which is larger than the third film.

    摘要翻译： 衬底包括功能元件。 绝缘的第一膜形成空腔，其与基板一起存储功能元件，并且包括多个通孔。 绝缘的第二膜覆盖多个通孔，形成在第一膜上，并且具有比第一膜高的透气性。 在第二薄膜上形成绝缘的第三薄膜，其透气度低于第二薄膜。 绝缘的第四膜形成在第三膜上，并且具有大于第三膜的弹性。

    Electrical device including a functional element in a cavity
    89.
    发明授权
    Electrical device including a functional element in a cavity 有权
    电气设备包括空腔中的功能元件

    公开(公告)号：US08829359B2

    公开(公告)日：2014-09-09

    申请号：US13647845

    申请日：2012-10-09

    申请人： Akihiro Kojima ,  Yoshiaki Sugizaki ,  Yoshiaki Shimooka

    发明人： Akihiro Kojima ,  Yoshiaki Sugizaki ,  Yoshiaki Shimooka

    IPC分类号： H05K1/16

    CPC分类号： B81B7/0038 ,  B81B2201/0221 ,  B81B2203/04 ,  B81C1/00476

    摘要： A substrate includes a functional element. An insulating first film forms a cavity which stores the functional element, together with the substrate, and includes a plurality of through-holes. An insulating second film covers the plurality of through-holes, is formed on the first film, and has a gas permeability which is higher than that of the first film. An insulating third film is formed on the second film and has a gas permeability which is lower than the second film. An insulating fourth film is formed on the third film and has an elasticity which is larger than the third film.

    摘要翻译： 衬底包括功能元件。 绝缘的第一膜形成空腔，其与基板一起存储功能元件，并且包括多个通孔。 绝缘的第二膜覆盖多个通孔，形成在第一膜上，并且具有比第一膜高的透气性。 在第二薄膜上形成绝缘的第三薄膜，其透气度低于第二薄膜。 绝缘的第四膜形成在第三膜上，并且具有大于第三膜的弹性。

    CAPACITIVE PRESSURE SENSOR AND METHOD
    90.
    发明申请
    CAPACITIVE PRESSURE SENSOR AND METHOD 有权
    电容式压力传感器及方法

    公开(公告)号：US20140231939A1

    公开(公告)日：2014-08-21

    申请号：US14042861

    申请日：2013-10-01

    申请人： Robert Bosch GmbH

    发明人： Ando Feyh ,  Andrew B. Graham

    IPC分类号： B81C1/00 ,  B81B3/00

    CPC分类号： B81C1/00476 ,  B81B3/0021 ,  B81B2201/0264 ,  B81C1/00182 ,  G01L9/0042 ,  G01L9/0073

    摘要： In one embodiment, a method of forming a MEMS device includes providing a silicon wafer with a base layer and an intermediate layer above an upper surface of the base layer. A first electrode is defined in the intermediate layer and an oxide portion is provided above an upper surface of the intermediate layer. A cap layer is provided on an upper surface of the oxide portion and a second electrode is defined in the cap layer. The method further includes etching the oxide portion to form a cavity such that when the second electrode and the cavity are projected onto the intermediate layer, the projected second electrode encompasses the projected cavity.

    摘要翻译： 在一个实施例中，形成MEMS器件的方法包括在基底层的上表面上方提供具有基底层和中间层的硅晶片。 在中间层中限定第一电极，并且在中间层的上表面上方设置氧化物部分。 盖层设置在氧化物部分的上表面上，第二电极限定在盖层中。 该方法还包括蚀刻氧化物部分以形成空腔，使得当第二电极和空腔被投射到中间层上时，突出的第二电极包围投影腔。