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    FET SENSOR USING ANTIOXIDANT
    2.
    发明公开
    FET SENSOR USING ANTIOXIDANT 审中-公开

    公开(公告)号：US20230304964A1

    公开(公告)日：2023-09-28

    申请号：US17930415

    申请日：2022-09-07

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Yoshiaki SUGIZAKI ,  Hiroko MIKI

    IPC: G01N27/414

    CPC classification number: G01N27/4146 ,  G01N27/4145 ,  H01L29/1606

    Abstract: According to one embodiment, an FET sensor includes a sensitive film including a carbon allotrope, a liquid film disposed so as to cover the sensitive film, a source electrode and a drain electrode electrically connected to the sensitive film, and a gate electrode configured to apply an electric field to the sensitive film, wherein the liquid film comprises an antioxidant.

    CHEMICAL SENSOR, DETECTION METHOD, REAGENT AND KIT
    3.
    发明公开
    CHEMICAL SENSOR, DETECTION METHOD, REAGENT AND KIT 审中-公开

    公开(公告)号：US20230273165A1

    公开(公告)日：2023-08-31

    申请号：US18301613

    申请日：2023-04-17

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Yoshiaki SUGIZAKI

    IPC: G01N33/00 ,  G01N1/44 ,  C12Q1/00 ,  G01N27/49

    CPC classification number: G01N33/0013 ,  G01N1/44 ,  C12Q1/005 ,  G01N27/49 ,  G01N2001/2833

    Abstract: According to one embodiment, a chemical sensor includes a sensor element. The sensor element includes a sensitive film and a treatment material. Physical properties of the sensitive film vary as bonding of a target substance to the sensitive film. The sensor element is configured to detect the variation in the physical properties. The treatment material is configured to carry out a treatment onto the target substance before the target substance bonds to the sensitive film. The treatment enhances the variation in the physical properties as compared to a case without the treatment.

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
    6.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号：US20150034985A1

    公开(公告)日：2015-02-05

    申请号：US14153160

    申请日：2014-01-13

    Applicant: Kabushiki Kaisha Toshiba

    Inventor： Hideyuki TOMIZAWA ,  Akihiro KOJIMA ,  Miyoko SHIMADA ,  Yosuke AKIMOTO ,  Miyuki SHIMOJUKU ,  Hideto FURUYAMA ,  Yoshiaki SUGIZAKI

    IPC: H01L33/60 ,  H01L33/50

    CPC classification number: H01L33/60 ,  H01L33/44 ,  H01L33/46 ,  H01L33/486 ,  H01L33/50 ,  H01L2933/0033

    Abstract: According to one embodiment, the optical layer has a larger planar size than the semiconductor layer. The optical layer is transmissive to emission light of the light emitting layer. The first insulating film is provided on a side surface of the semiconductor layer continued from the first surface. The metal film includes a first reflective part covering the side surface of the semiconductor layer via the first insulating film. The metal film includes a second reflective part opposed to the optical layer in a region around the side surface of the semiconductor layer and extending from the first reflective part toward a side opposite from the side surface of the semiconductor layer.

    Abstract translation: 根据一个实施例，光学层具有比半导体层更大的平面尺寸。 光学层对发光层的发射光是透射的。 第一绝缘膜设置在从第一表面延续的半导体层的侧表面上。 金属膜包括经由第一绝缘膜覆盖半导体层的侧表面的第一反射部分。 金属膜包括在半导体层的侧表面周围的区域中与光学层相对的第二反射部分，并且从第一反射部分朝向与半导体层的侧表面相对的一侧延伸。

    ELECTRICAL DEVICE INCLUDING A FUNCTIONAL ELEMENT IN A CAVITY
    7.
    发明申请
    ELECTRICAL DEVICE INCLUDING A FUNCTIONAL ELEMENT IN A CAVITY 审中-公开
    电气设备，包括一个功能元素在一个空间

    公开(公告)号：US20140353777A1

    公开(公告)日：2014-12-04

    申请号：US14462262

    申请日：2014-08-18

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Akihiro KOJIMA ,  Yoshiaki SUGIZAKI ,  Yoshiaki SHIMOOKA

    IPC: B81B7/00

    CPC classification number: B81B7/0038 ,  B81B2201/0221 ,  B81B2203/04 ,  B81C1/00476

    Abstract: A substrate includes a functional element. An insulating first film forms a cavity which stores the functional element, together with the substrate, and includes a plurality of through-holes. An insulating second film covers the plurality of through-holes, is formed on the first film, and has a gas permeability which is higher than that of the first film. An insulating third film is formed on the second film and has a gas permeability which is lower than the second film. An insulating fourth film is formed on the third film and has an elasticity which is larger than the third film.

    Abstract translation: 衬底包括功能元件。 绝缘的第一膜形成空腔，其与基板一起存储功能元件，并且包括多个通孔。 绝缘的第二膜覆盖多个通孔，形成在第一膜上，并且具有比第一膜高的透气性。 在第二薄膜上形成绝缘的第三薄膜，其透气度低于第二薄膜。 绝缘的第四膜形成在第三膜上，并且具有大于第三膜的弹性。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT SOURCE UNIT
    8.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT SOURCE UNIT 有权
    半导体发光器件和光源单元

    公开(公告)号：US20130313589A1

    公开(公告)日：2013-11-28

    申请号：US13779690

    申请日：2013-02-27

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Hideyuki TOMIZAWA ,  Akihiro KOJIMA ,  Miyoko SHIMADA ,  Yosuke AKIMOTO ,  Yoshiaki SUGIZAKI ,  Hideto FURUYAMA

    IPC: H01L33/48

    CPC classification number: H01L33/48 ,  H01L33/56 ,  H01L2224/18

    Abstract: According to an embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, n-side electrode and a resin layer. The semiconductor layer has a first face and a second face opposite to the first face, and includes a light emitting layer. The p-side electrode is provided on the semiconductor layer on the second face side. The n-side electrode is provided on the semiconductor layer on the second face side. The resin layer is provided on the first face and transmits light emitted from the light emitting layer, the resin layer including a top surface opposite to the first face and four side faces provided along an outer edge of the first face and connected to the top surface, the resin layer including a scattering substance scattering the light emitted from the light emitting layer.

    Abstract translation: 根据实施例，半导体发光器件包括半导体层，p侧电极，n侧电极和树脂层。 半导体层具有与第一面相反的第一面和第二面，并且包括发光层。 p侧电极设置在第二面侧的半导体层上。 n侧电极设置在第二面侧的半导体层上。 树脂层设置在第一面上，透射从发光层发射的光，树脂层包括与第一面相对的顶表面和沿着第一面的外边缘设置的四个侧面，并连接到顶表面 所述树脂层包括散射从所述发光层发射的光的散射物质。

    SENSOR MODULE SYSTEM
    9.
    发明公开
    SENSOR MODULE SYSTEM 审中-公开

    公开(公告)号：US20240201124A1

    公开(公告)日：2024-06-20

    申请号：US18458335

    申请日：2023-08-30

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Miyu NAGAI ,  Yoshiaki SUGIZAKI ,  Hideyuki TOMIZAWA

    IPC: G01N27/414

    CPC classification number: G01N27/4145

    Abstract: According to one embodiment, a sensor module system includes a first sensor module including a probe molecule that responds to light irradiation with charge, and a second sensor module including no probe molecule. A first flow path is connected to one end side of the first sensor module, and a second flow path is connected to the other end side. A third flow path branching from the first flow path is connected to one end side of the second sensor module, and a fourth flow path joining the first flow path is connected to the other end side. A valve capable of opening and closing the third flow path is connected to a junction of the first flow path and the third flow path.

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