公开(公告)号：US20240410869A1

公开(公告)日：2024-12-12

申请号：US18583115

申请日：2024-02-21

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Ping WANG ,  Masayuki MATSUTAKE ,  Hiroaki YAMAZAKI ,  Yoshihiko KURUI ,  Yosuke AKIMOTO

IPC: G01N33/00 ,  G01N25/18

Abstract: According to one embodiment, a sensor includes a sensor section and a circuit section. The sensor section includes a first element portion including a first resistance element and a first conductive member, and a second element portion including a second resistance element. The circuit section includes a detector and a controller, and is configured to perform a first operation. The controller controls a first power in the first operation based on a second signal corresponding to a second resistance of the second resistance element. In the first operation: the controller supplies the first power to the first conductive member to increase a first temperature of the first element section; and the detector outputs a detected value corresponding to a difference between the second signal and a first signal corresponding to a first resistance of the first resistance element in a first state in which the first temperature is raised.

公开(公告)号：US20240295516A1

公开(公告)日：2024-09-05

申请号：US18354713

申请日：2023-07-19

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yosuke AKIMOTO ,  Akira FUJIMOTO ,  Yoshihiko KURUI ,  Ping WANG ,  Hiroaki YAMAZAKI

IPC: G01N27/12 ,  G01N33/00

CPC classification number: G01N27/12 ,  G01N33/0027

Abstract: According to one embodiment, a sensor includes an element portion including a first base and a first element. The first element includes, a first fixed member fixed to the first base, a first resistance connecting member supported by the first fixed member, a first conductive connecting member supported by the first fixed member, and a first film portion supported by the first resistance connecting member and the first conductive connecting member. A first gap is provided between the first base and the first film portion. The first film portion includes a first resistance layer and a first conductive layer. The first resistance connecting member includes a first resistance wiring electrically connected to the first resistance layer. The first conductive connecting member includes a first conductive wiring electrically connected to the first conductive layer.

公开(公告)号：US20240011961A1

公开(公告)日：2024-01-11

申请号：US18174960

申请日：2023-02-27

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yosuke AKIMOTO ,  Akira FUJIMOTO ,  Hiroaki YAMAZAKI

IPC: G01N33/00

CPC classification number: G01N33/0027 ,  G01N33/0011

Abstract: According to one embodiment, a sensor includes a housing, a sensor portion, and a film member. The housing includes a first housing member including an opening. The first housing member includes a first inner face, and a first side face inside the opening. The sensor portion includes a sensor member including a hole, and a sensor element. A first gap is provided between the sensor element and the sensor member. The film member is porous. The film member includes an inner region and an outer region around the inner region. The outer region faces the first inner face. The sensor member is located between the sensor element and the inner region. The sensor member faces the inner region. At least a part of the inner region overlaps the first side face in a second direction crossing a first direction from the sensor element to the sensor member.

公开(公告)号：US20210318279A1

公开(公告)日：2021-10-14

申请号：US17176878

申请日：2021-02-16

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yosuke AKIMOTO ,  Hiroki KUDO ,  Hiroaki YAMAZAKI ,  Kentaro NAKAJIMA ,  Kohei SUZUKI

IPC: G01N33/00 ,  G08C17/02

Abstract: According to one embodiment, a sensor includes a handhole part, and a sensor module. The handhole part includes an inner wall and a holder. The holder is located at the inner wall. The sensor module is provided in the handhole part. The sensor module includes a held part held by the holder, a housing connected with the held part, a sensor circuit provided in the housing and including a gas sensor element, and a battery configured to supply electrical power to the sensor circuit. A gap is between the inner wall and the housing and between the housing and a first member under the housing.

公开(公告)号：US20170301829A1

公开(公告)日：2017-10-19

申请号：US15640669

申请日：2017-07-03

Applicant: Kabushiki Kaisha Toshiba

Inventor： Hideyuki TOMIZAWA ,  Akihiro KOJIMA ,  Miyoko SHIMADA ,  Yosuke AKIMOTO ,  Hideto FURUYAMA ,  Yoshiaki SUGIZAKI

IPC: H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L33/44 ,  H01L33/50 ,  H01L33/48

Abstract: According to one embodiment, the p-side electrode is provided on the second semiconductor layer. The insulating film is provided on the p-side electrode. The n-side electrode includes a first portion, a second portion, and a third portion. The first portion is provided on a side face of the first semiconductor layer. The second portion is provided in the first n-side region. The third portion overlaps the p-side electrode via the insulating film and connects the first portion and the second portion to each other.

公开(公告)号：US20150034985A1

公开(公告)日：2015-02-05

申请号：US14153160

申请日：2014-01-13

Applicant: Kabushiki Kaisha Toshiba

Inventor： Hideyuki TOMIZAWA ,  Akihiro KOJIMA ,  Miyoko SHIMADA ,  Yosuke AKIMOTO ,  Miyuki SHIMOJUKU ,  Hideto FURUYAMA ,  Yoshiaki SUGIZAKI

IPC: H01L33/60 ,  H01L33/50

CPC classification number: H01L33/60 ,  H01L33/44 ,  H01L33/46 ,  H01L33/486 ,  H01L33/50 ,  H01L2933/0033

Abstract: According to one embodiment, the optical layer has a larger planar size than the semiconductor layer. The optical layer is transmissive to emission light of the light emitting layer. The first insulating film is provided on a side surface of the semiconductor layer continued from the first surface. The metal film includes a first reflective part covering the side surface of the semiconductor layer via the first insulating film. The metal film includes a second reflective part opposed to the optical layer in a region around the side surface of the semiconductor layer and extending from the first reflective part toward a side opposite from the side surface of the semiconductor layer.

Abstract translation: 根据一个实施例，光学层具有比半导体层更大的平面尺寸。 光学层对发光层的发射光是透射的。 第一绝缘膜设置在从第一表面延续的半导体层的侧表面上。 金属膜包括经由第一绝缘膜覆盖半导体层的侧表面的第一反射部分。 金属膜包括在半导体层的侧表面周围的区域中与光学层相对的第二反射部分，并且从第一反射部分朝向与半导体层的侧表面相对的一侧延伸。

公开(公告)号：US20140374789A1

公开(公告)日：2014-12-25

申请号：US14481712

申请日：2014-09-09

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Miyuki IZUKA ,  Susumu OBATA ,  Akiya KIMURA ,  Akihiro KOJIMA ,  Yosuke AKIMOTO ,  Yoshiaka SUGIZAKI

IPC: H01L33/38 ,  H01L33/62

CPC classification number: H01L33/38 ,  H01L33/0079 ,  H01L33/44 ,  H01L33/486 ,  H01L33/50 ,  H01L33/58 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a p-side metal pillar, an n-side metal pillar, and an insulator. The semiconductor layer includes a first surface, a second surface opposite to the first surface, and a light emitting layer. The p-side metal pillar includes a p-side external terminal. The n-side metal pillar includes an n-side external terminal. At least one selected from an area and a planar configuration of the p-side external terminal is different from at least one selected from an area and a planar configuration of the n-side external terminal.

Abstract translation: 根据一个实施例，半导体发光器件包括半导体层，p侧电极，n侧电极，p侧金属柱，n侧金属柱和绝缘体。 半导体层包括第一表面，与第一表面相对的第二表面和发光层。 p侧金属柱包括p侧外部端子。 n侧金属柱包括n侧外部端子。 从p侧外部端子的区域和平面配置中选择的至少一个与从n侧外部端子的区域和平面配置中选择的至少一个不同。

公开(公告)号：US20130313589A1

公开(公告)日：2013-11-28

申请号：US13779690

申请日：2013-02-27

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Hideyuki TOMIZAWA ,  Akihiro KOJIMA ,  Miyoko SHIMADA ,  Yosuke AKIMOTO ,  Yoshiaki SUGIZAKI ,  Hideto FURUYAMA

IPC: H01L33/48

CPC classification number: H01L33/48 ,  H01L33/56 ,  H01L2224/18

Abstract: According to an embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, n-side electrode and a resin layer. The semiconductor layer has a first face and a second face opposite to the first face, and includes a light emitting layer. The p-side electrode is provided on the semiconductor layer on the second face side. The n-side electrode is provided on the semiconductor layer on the second face side. The resin layer is provided on the first face and transmits light emitted from the light emitting layer, the resin layer including a top surface opposite to the first face and four side faces provided along an outer edge of the first face and connected to the top surface, the resin layer including a scattering substance scattering the light emitted from the light emitting layer.

Abstract translation: 根据实施例，半导体发光器件包括半导体层，p侧电极，n侧电极和树脂层。 半导体层具有与第一面相反的第一面和第二面，并且包括发光层。 p侧电极设置在第二面侧的半导体层上。 n侧电极设置在第二面侧的半导体层上。 树脂层设置在第一面上，透射从发光层发射的光，树脂层包括与第一面相对的顶表面和沿着第一面的外边缘设置的四个侧面，并连接到顶表面 所述树脂层包括散射从所述发光层发射的光的散射物质。

公开(公告)号：US20240201114A1

公开(公告)日：2024-06-20

申请号：US18353297

申请日：2023-07-17

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yosuke AKIMOTO ,  Hiroaki YAMAZAKI

IPC: G01N25/18 ,  G01N33/00

CPC classification number: G01N25/18 ,  G01N33/0032 ,  G01N33/0062

Abstract: According to one embodiment, a sensor includes a base including a first region and a second region; and a first sensor section. The first sensor section includes a first support portion fixed to the first region, a first structure, and a first film portion. The first structure is supported by the first support portion. The first structure includes a first resistance member. A first direction from the second region to the first structure crosses a second direction from the first region to the second region. The first film portion is fixed to the first region. A first gap is provided between the second region and the first film portion. A second gap is provided between the first film portion and the first structure.

公开(公告)号：US20240068970A1

公开(公告)日：2024-02-29

申请号：US18173719

申请日：2023-02-23

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yoshihiko KURUI ,  Hiroaki YAMAZAKI ,  Yosuke AKIMOTO ,  Ping WANG ,  Fumitaka ISHIBASHI ,  Yumi HAYASHI

IPC: G01N27/12

CPC classification number: G01N27/12

Abstract: According to one embodiment, a sensor includes a detection device, a switch circuit, and a detection circuit. The detection device includes a first detection section and a second detection section. The first detection section includes a first detection element. The first detection element includes a first conductive member and a first resistance member. The second detection section includes a second detection element. The second detection element includes a second conductive member and a second resistance member. In a first operation, the switch circuit is configured to supply a first current to the first conductive member and not to supply the first current to the second conductive member, and the detection circuit is configured to output a first signal corresponding to a difference between a first electrical resistance of the first resistance member and a second electrical resistance of the second resistance member.