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公开(公告)号：US20160293336A1
公开(公告)日：2016-10-06
申请号：US14848349
申请日：2015-09-09
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Akira FUJIMOTO , Naofumi NAKAMURA , Tamio IKEHASHI
Abstract: According to one embodiment, an electronic device includes an underlying region, a variable capacitor including fixed electrodes and movable electrodes alternately arranged in a direction not perpendicular to a main surface of the underlying region, and a protective film which covers the variable capacitor and includes a conductive portion electrically connected to the fixed electrodes and having a hole.
Abstract translation: 根据一个实施例，一种电子设备包括下面的区域，包括固定电极和可移动电极的可变电容器，所述固定电极和可移动电极在不垂直于下面区域的主表面的方向上交替布置;以及保护膜，其覆盖可变电容器并且包括 电连接到固定电极并具有孔的导电部分。
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公开(公告)号：US20140139714A1
公开(公告)日：2014-05-22
申请号：US13799752
申请日：2013-03-13
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Ikuo FUJIWARA , Hideyuki FUNAKI , Kenji TODORI , Akira FUJIMOTO , Tsutomu NAKANISHI , Kenji NAKAMURA
IPC: H04N5/374
CPC classification number: H01L27/14665 , H01L27/14609 , H01L27/14612 , H01L27/14636 , H01L27/14638
Abstract: A solid state imaging device according to an embodiment includes a photo detector arranged two-dimensionally in a semiconductor substrate, a readout circuit provided in the semiconductor substrate, a first photoelectric conversion layer provided above the photo detector, a plurality of first metal dots provided above the first photoelectric conversion layer, a second photoelectric conversion layer provided above the first metal dots, and a plurality of second metal dots provided above the second photoelectric conversion layer.
Abstract translation: 根据实施例的固态成像装置包括：二维布置在半导体衬底中的光电检测器，设置在半导体衬底中的读出电路，设置在光电检测器上方的第一光电转换层，设置在上述多个第一金属点 第一光电转换层，设置在第一金属点上方的第二光电转换层，以及设置在第二光电转换层上方的多个第二金属点。
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公开(公告)号：US20240295514A1
公开(公告)日：2024-09-05
申请号：US18457555
申请日：2023-08-29
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Yosuke AKIMOTO , Akira FUJIMOTO , Yoshihiko KURUI , Ping WANG , Hiroaki YAMAZAKI
IPC: G01N27/04
CPC classification number: G01N27/04
Abstract: According to one embodiment, a sensor includes an element section including a first base and a first element. The first element includes a first fixed member fixed to the first base, a first connecting member supported by the first fixed member, and a first film portion supported by the first connecting member. A first gap is provided between the first base and the first film portion. The first film portion includes a first resistance layer, a first conductive layer, and a first conductive member provided between the first resistance layer and the first conductive layer. A potential of the first conductive member is fixed. A first electrical resistance of the first resistance layer is configured to change according to a state of a detection target around the first element.
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公开(公告)号：US20240082764A1
公开(公告)日：2024-03-14
申请号：US18175004
申请日：2023-02-27
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Akira FUJIMOTO , Yosuke AKIMOTO , Hiroaki YAMAZAKI
CPC classification number: B01D39/1692 , B01D19/0031 , B01D39/2031 , G01N33/0011 , B01D2239/065
Abstract: According to one embodiment, a filter includes a first layer and a second layer. The first layer includes a first resin provided with a plurality of holes. The first layer includes a first face. At least a part of the plurality of holes reaches the first face. The second layer includes a second resin. The second resin blocks at least a part of the plurality of holes reaching the first face.
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公开(公告)号：US20230349965A1
公开(公告)日：2023-11-02
申请号：US18348884
申请日：2023-07-07
Inventor： Makoto TAKANEZAWA , Takashi HARAKAWA , Akira FUJIMOTO , Satoshi HIROSHIMA
Abstract: A partial discharge measurement system comprising: at least one sensor configured to detect a voltage signal propagating through a conductor connected to a rotating electrical machine in a non-contact manner; a first bandpass filter through which a component of a first frequency included in the voltage signal acquired by the sensor passes; a second bandpass filter through which a component of a second frequency included in the voltage signal acquired by the sensor passes, the second frequency being lower than the first frequency; a phase acquirer configured to acquire a phase waveform of the component of the second frequency having passed through the second bandpass filter; and an output interface configured to output information by which a component of partial discharge of the rotating electrical machine included in the component of the first frequency having passed through the first bandpass filter can be identified based on the phase waveform.
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Patent Agency Ranking
公开(公告)号：US20220221501A1
公开(公告)日：2022-07-14
申请号：US17646066
申请日：2021-12-27
Inventor： Takashi HARAKAWA , Makoto TAKANEZAWA , Akira FUJIMOTO , Satoshi HIROSHIMA , Kazunori SHIODA
Abstract: According to one embodiment, an insulation diagnostic system comprising: a peak-value acquisition circuit configured to acquire at least one peak value of a section corresponding to local discharge of a voltage signal acquired by at least one sensor that detects the voltage signal in a non-contact manner; a function acquisition circuit configured to acquire a calculation function for calculating charge amount related to the discharge based on at least two peak values acquired from the voltage signal that is detected by the sensor by applying a test voltage to a rotating electrical machine while the rotating electrical machine is stopped; and a charge-amount calculation circuit configured to calculate the charge amount related to partial discharge of the rotating electrical machine based on the calculation function and the peak value obtained from the voltage signal that is detected by the sensor during operation of the rotating electrical machine.
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7.发明申请公开(公告)号：US20140349421A1
公开(公告)日：2014-11-27
申请号：US14455540
申请日：2014-08-08
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Akira FUJIMOTO , Ryota KITAGAWA , Kumi MASUNAGA , Kenji NAKAMURA , Tsutomu NAKANISHI , Koji ASAKAWA , Takanobu KAMAKURA , Shinji NUNOTANI
IPC: H01L33/40
CPC classification number: H01L33/405 , H01L33/0079 , H01L33/38 , H01L33/40 , H01L2933/0016
Abstract: According to one embodiment, a semiconductor light emitting device includes a structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes an electrode layer provided on the second semiconductor layer side of the structure. The electrode layer includes a metal portion with a thickness of not less than 10 nanometers and not more than 100 nanometers. A plurality of openings pierces the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers. The device includes an inorganic film providing on the metal portion and inner surfaces of the openings, the inorganic film having transmittivity with respect to light emitted from the light emitting layer.
Abstract translation: 根据一个实施例，半导体发光器件包括包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层的结构。 该器件还包括设置在该结构的第二半导体层侧上的电极层。 电极层包括厚度不小于10纳米且不大于100纳米的金属部分。 多个开口刺穿金属部分，每个开口具有不小于10纳米且不大于5微米的等效圆直径。 所述装置包括在所述金属部分和所述开口的内表面上提供的无机膜，所述无机膜相对于从所述发光层发射的光具有透射率。
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公开(公告)号：US20240295516A1
公开(公告)日：2024-09-05
申请号：US18354713
申请日：2023-07-19
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Yosuke AKIMOTO , Akira FUJIMOTO , Yoshihiko KURUI , Ping WANG , Hiroaki YAMAZAKI
CPC classification number: G01N27/12 , G01N33/0027
Abstract: According to one embodiment, a sensor includes an element portion including a first base and a first element. The first element includes, a first fixed member fixed to the first base, a first resistance connecting member supported by the first fixed member, a first conductive connecting member supported by the first fixed member, and a first film portion supported by the first resistance connecting member and the first conductive connecting member. A first gap is provided between the first base and the first film portion. The first film portion includes a first resistance layer and a first conductive layer. The first resistance connecting member includes a first resistance wiring electrically connected to the first resistance layer. The first conductive connecting member includes a first conductive wiring electrically connected to the first conductive layer.
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公开(公告)号：US20240011961A1
公开(公告)日：2024-01-11
申请号：US18174960
申请日：2023-02-27
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Yosuke AKIMOTO , Akira FUJIMOTO , Hiroaki YAMAZAKI
IPC: G01N33/00
CPC classification number: G01N33/0027 , G01N33/0011
Abstract: According to one embodiment, a sensor includes a housing, a sensor portion, and a film member. The housing includes a first housing member including an opening. The first housing member includes a first inner face, and a first side face inside the opening. The sensor portion includes a sensor member including a hole, and a sensor element. A first gap is provided between the sensor element and the sensor member. The film member is porous. The film member includes an inner region and an outer region around the inner region. The outer region faces the first inner face. The sensor member is located between the sensor element and the inner region. The sensor member faces the inner region. At least a part of the inner region overlaps the first side face in a second direction crossing a first direction from the sensor element to the sensor member.
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公开(公告)号：US20150083205A1
公开(公告)日：2015-03-26
申请号：US14488627
申请日：2014-09-17
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Akira FUJIMOTO , Tsutomu NAKANISHI , Kenji NAKAMURA
IPC: H01L31/0725 , H01L31/0224
CPC classification number: H01L31/0725 , H01L31/022433 , H01L31/0328 , H01L31/035281 , H01L31/078 , Y02E10/50
Abstract: The present disclosure provides a photoelectric conversion element comprising a photoelectric conversion layer laminated a first metal layer, a first semiconductor layer, a second semiconductor layer and a second metal layer. The first or second metal layer contains a porous metal thin film, and the porous metal thin film has plural openings penetrating through the film. Each of the openings has an area of 80 nm2 to 0.8 μm2 inclusive on average, and the porous metal thin film has a thickness of 2 nm to 200 nm inclusive. The second semiconductor layer has a smaller band gap than the first semiconductor layer, has polarity opposite to that of the first semiconductor layer, and is positioned within 5 nm from the porous metal thin film.
Abstract translation: 本公开提供一种光电转换元件，其包括层叠了第一金属层，第一半导体层，第二半导体层和第二金属层的光电转换层。 第一或第二金属层包含多孔金属薄膜，并且多孔金属薄膜具有贯穿膜的多个开口。 每个开口的平均面积为80nm 2〜0.8μm2，多孔金属薄膜的厚度为2nm〜200nm。 第二半导体层具有比第一半导体层更小的带隙，具有与第一半导体层的极性相反的极性，并且位于距离多孔金属薄膜5nm以内。
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