摘要:
A substrate includes a functional element. An insulating first film forms a cavity which stores the functional element, together with the substrate, and includes a plurality of through-holes. An insulating second film covers the plurality of through-holes, is formed on the first film, and has a gas permeability which is higher than that of the first film. An insulating third film is formed on the second film and has a gas permeability which is lower than the second film. An insulating fourth film is formed on the third film and has an elasticity which is larger than the third film.
摘要:
A method of producing a semiconductor device having a plurality of wiring layers forms a first interlayer-insulating film, forms a plurality of grooves for wiring in the first interlayer-insulating film, fills metallic films in the grooves to form wirings, etches the first interlayer-insulating film with the wirings as a mask and removes the interlayer-insulating film between the wirings to provide grooves to be filled, and fills a second interlayer-insulating film made of a material of low dielectric constant in the grooves to be filled.
摘要:
An interconnect method in a semiconductor device may include a step of examining various regions of an inter layer dielectric to identify regions having high densities or concentrations of trench features. A cap insulator layer may be added to the dielectric to assist in outgassing of absorbed impurities from the dielectric, but may be removed from the high density areas to allow the lower density areas to increase outgassing. The lower density areas may then compensate for increased outgassing on the high density areas due to the trench features, and may result in an overall device with a more stable dielectric constant across the device.
摘要:
An interconnect structure and method for manufacturing are described wherein an insulating material adjacent to or at least partially surrounding a conductive interconnect has a coefficient of thermal expansion (CTE) equal to or larger than the CTE of the interconnect. For example, a copper-based damascene interconnect layer may be provided, wherein an inter-layer dielectric (ILD) a least partially surrounds the interconnect layer and a cap insulator is disposed on the interconnect layer. In such an embodiment, the CTE of the ILD and/or the cap insulator would be at least as large as the CTE of the interconnect layer. This may result in no stress or compressive stress being applied by the insulating material to the interconnect layer when the device has cooled, such as to room temperature, after formation of the various layers.
摘要:
This invention includes a signal line 17, through which a signal having a desired frequency f0 passes, formed on a semiconductor substrate 10, and a differential signal line 13 through which a signal in opposite phase to the signal passing through the signal line passes, or which is connected to a ground power supply, the signal line and the differential signal line are formed so as to be substantially in parallel with each other via an insulating layer 15, and an actual wiring length l of the signal line is longer than a wiring length l0 determined by the following equation l 0 = L C + R 2 + 8 π 2 f 0 2 L 2 4 π 2 f 0 2 C 2 R 2 + 4 π 2 f 0 2 L 2 where R represents a resistance component, L represents an inductance component, and C represents a capacitance component, per unit length of the signal line when no differential signal line exists.
摘要:
According to one embodiment, an electrical component comprises a substrate, an element, a first layer, and a second layer. The element is formed on the substrate. The first layer forms a cavity accommodating the element on the substrate and includes through holes. The second layer is formed on the first layer and seals the through holes. The first layer includes the first film formed on the lower side and the second film which is formed on the first film and has a lower coefficient of thermal expansion than the first film.
摘要:
A semiconductor optical wave guide device is described in which a buried oxide layer (BOX) is capable of guiding light. Optical signals may be transmitted from one part of the semiconductor device to another, or with a point external to the semiconductor device, via the wave guide. In one example, an optical wave guide is provided including a core insulating layer encompassed by a clad insulating layer. The semiconductor device may contain an etched hole for guiding light to and from the core insulating layer from a transmitter or to a receiver.
摘要:
A substrate includes a functional element. An insulating first film forms a cavity which stores the functional element, together with the substrate, and includes a plurality of through-holes. An insulating second film covers the plurality of through-holes, is formed on the first film, and has a gas permeability which is higher than that of the first film. An insulating third film is formed on the second film and has a gas permeability which is lower than the second film. An insulating fourth film is formed on the third film and has an elasticity which is larger than the third film.
摘要:
According to an aspect of the present invention, there is provided a method for manufacturing a MEMS package, the method including: forming a MEMS device on a substrate; forming a sacrificing member on the MEMS device; forming a cavity formation film on the sacrificing member; forming a through hole in the cavity formation film at a portion other than above the MEMS device; removing the sacrificing member through the through hole, thereby forming a cavity around the MEMS device; and forming a seal layer on the cavity formation film to block the through hole and to seal the cavity, by performing a film forming process in which a seal layer material is straightly applied in a direction of perpendicular to a surface of the substrate.
摘要:
A method of producing a semiconductor device having a plurality of wiring layers forms a first interlayer-insulating film, forms a plurality of grooves for wiring in the first interlayer-insulating film, fills metallic films in the grooves to form wirings, etches the first interlayer-insulating film with the wirings as a mask and removes the interlayer-insulating film between the wirings to provide grooves to be filled, and fills a second interlayer-insulating film made of a material of low dielectric constant in the grooves to be filled.