公开(公告)号：US20150237737A1

公开(公告)日：2015-08-20

申请号：US14342288

申请日：2013-11-11

申请人： JX Nippon Mining & Metals Corporation

发明人： Hideta Arai ,  Atsushi Miki ,  Kohsuke Arai ,  Kaichiro Nakamuro

IPC分类号： H05K3/02 ,  H05K1/02 ,  H05K3/36 ,  H05K1/14 ,  H05K1/03 ,  H05K1/09

CPC分类号： H05K3/022 ,  C25D1/04 ,  C25D7/0614 ,  H05K1/028 ,  H05K1/0346 ,  H05K1/09 ,  H05K1/14 ,  H05K3/361 ,  H05K3/384 ,  H05K2201/0154 ,  H05K2201/0317 ,  H05K2201/0355 ,  H05K2201/05 ,  H05K2201/058 ,  Y10T29/49126 ,  Y10T428/12431 ,  Y10T428/24917 ,  Y10T428/31681

摘要： A surface treated copper foil which is well bonded to a resin and achieves excellent visibility when observed through the resin, and a laminate using the same are provided. The surface treated copper foil to be laminated on a polyimide having the following ΔB (PI) of 50 or more and 65 or less before being laminated to the copper foil so as to form a copper clad laminate comprising a surface having a color difference ΔE*ab of 50 or more based on JIS Z 8730 through the polyimide and a difference between the top average Bt and the bottom average Bb in a brightness curve extending from an edge of the copper foil to a portion without the copper foil ΔB (ΔB=Bt−Bb) of 40 or more, wherein the brightness curve is obtained from an observation spot versus brightness graph of measurement results of the brightness of the photographed image of the copper foil through the polyimide laminated from the surface treated surface side with a CCD camera for the respective observation spots along the perpendicular direction of the extending direction of the observed copper foil.

摘要翻译： 一种表面处理的铜箔，其良好地结合到树脂上，并且当通过树脂观察时可以获得良好的可见性，并且提供使用其的层压体。 在层压到铜箔上之前，将层压在具有50以上且65以下的Dgr。B（PI）的聚酰亚胺的表面处理铜箔上形成覆铜层压板，其包含具有色差的表面 ＆Dgr; E * ab为50以上，基于JIS Z 8730通过聚酰亚胺，并且从铜箔边缘延伸到不具有铜箔的部分的亮度曲线中的顶部平均Bt和底部平均Bb之间的差异Dgr ; B（＆Dgr; B = Bt-Bb）为40以上，其中，从通过从表面层压的聚酰亚胺的铜箔的拍摄图像的亮度的测量结果的观察点与亮度曲线获得亮度曲线 用CCD照相机，沿着观察到的铜箔的延伸方向的垂直方向对各观察点进行处理。

公开(公告)号：US09099229B2

公开(公告)日：2015-08-04

申请号：US14008254

申请日：2012-03-27

申请人： Toshio Kurosawa

发明人： Toshio Kurosawa

IPC分类号： H01C1/012 ,  H01C7/00 ,  C23C14/02 ,  C23C14/16 ,  B32B15/01 ,  C22C19/05 ,  H05K1/16 ,  C22C1/02 ,  H05K1/09 ,  H05K3/02

CPC分类号： H01C7/00 ,  B32B15/01 ,  C22C1/02 ,  C22C19/058 ,  C23C14/022 ,  C23C14/165 ,  H05K1/09 ,  H05K1/167 ,  H05K3/022 ,  H05K2201/0355

摘要： The present invention provides a metal foil provided with an electrical resistance layer, in which peeling between the metal foil and the electrical resistance layer disposed on the metal foil can be prevented and variation in the resistivity of the resistance layer can be reduced, and a method of manufacturing the same. The present invention includes a metal foil with an electrical resistance layer including a metal foil having a surface of a ten-point mean roughness Rz, which is measured by an optical method according to 1 μm or less and the surface being treated by irradiation with ion beams at an ion beam intensity of 0.70-2.10 sec·W/cm2 and an electrical resistance layer disposed on the surface of the metal foil.

摘要翻译： 本发明提供了一种设置有电阻层的金属箔，其中可以防止金属箔和设置在金属箔上的电阻层之间的剥离，并且可以减小电阻层的电阻率的变化，以及方法 的制造相同。 本发明包括具有电阻层的金属箔，该电阻层包括具有十点平均粗糙度Rz的表面的金属箔，其通过根据1μm以下的光学方法测量，并且通过照射离子进行处理的表面 离子束强度为0.70-2.10秒·W / cm2的光束和设置在金属箔表面上的电阻层。

公开(公告)号：US09062371B2

公开(公告)日：2015-06-23

申请号：US13510065

申请日：2010-10-04

申请人： Yoshimasa Koido

发明人： Yoshimasa Koido

IPC分类号： C23C14/34 ,  B32B15/01 ,  C21D9/00 ,  C22C9/00 ,  C22C19/03 ,  C22C23/00 ,  C22F1/02 ,  C22F1/08 ,  H01J37/34

CPC分类号： C23C14/3407 ,  B32B15/01 ,  C21D9/0068 ,  C22C9/00 ,  C22C19/03 ,  C22C23/00 ,  C22F1/02 ,  C22F1/08 ,  C23C14/3414 ,  H01J37/3414 ,  H01J37/3435 ,  H01J37/3491

摘要： A sputtering target-backing plate assembly obtained by bonding a target material of Mg to a backing plate of Cu—Cr alloy, wherein the target material and the backing plate are bonded via a layer of Ni or an alloy comprising Ni as a main component at the interface therebetween. An object of the present invention is to provide a sputtering target-backing plate assembly that is used when magnesium (Mg) is the sputtering target material, and to resolve problems inherent in magnesium (Mg) and problems related to the selection of a backing plate to be compatible with magnesium by improving the bonding strength between the target and the backing plate in order to improve the sputtering efficiency.

摘要翻译： 通过将Mg的靶材与Cu-Cr合金的背板接合而获得的溅射靶 - 背板组件，其中，目标材料和背板通过Ni或包含Ni作为主要成分的合金层接合 它们之间的界面。 本发明的目的是提供一种当镁（Mg）是溅射靶材料时使用并且解决镁（Mg）中固有的问题以及与背板选择有关的问题时使用的溅射靶 - 背板组件 通过提高靶和背板之间的结合强度来与镁相容，以提高溅射效率。

公开(公告)号：US09034153B2

公开(公告)日：2015-05-19

申请号：US12160042

申请日：2006-12-26

申请人： Kazuyuki Satoh

发明人： Kazuyuki Satoh

IPC分类号： C23C14/34 ,  G11B5/851 ,  H01F41/18

CPC分类号： G11B5/851 ,  C23C14/3414 ,  H01F41/183

摘要： Provided is a nonmagnetic material particle dispersed ferromagnetic material sputtering target comprising a material including nonmagnetic material particles dispersed in a ferromagnetic material. The nonmagnetic material particle dispersed ferromagnetic material sputtering target is characterized in that all particles of the nonmagnetic material with a structure observed on the material in its polished face have a shape and size that are smaller than all imaginary circles having a radius of 2 μm formed around an arbitrary point within the nonmagnetic material particles, or that have at least two contact points or intersection points between the imaginary circles and the interface of the ferromagnetic material and the nonmagnetic material. The nonmagnetic material particle dispersed ferromagnetic material sputtering target is advantageous in that, in the formation of a film by sputtering, the influence of heating or the like on a substrate can be reduced, high-speed deposition by DC sputtering is possible, the film thickness can be regulated to be thin, the generation of particles (dust) or nodules can be reduced during sputtering, the variation in quality can be reduced to improve the mass productivity, fine crystal grains and high density can be realized, and the nonmagnetic material particle dispersed ferromagnetic material sputtering target is particularly best suited for use as a magnetic recording layer.

摘要翻译： 提供了一种分散铁磁材料溅射靶的非磁性材料颗粒，其包括分散在铁磁材料中的包含非磁性材料颗粒的材料。 散射铁磁材料溅射靶的非磁性材料颗粒的特征在于，在其抛光面的材料上观察到的具有结构的非磁性材料的所有颗粒的形状和尺寸都小于形成在周围的半径为2μm的全部假想圆 在非磁性材料颗粒内的任意点，或者在假想圆与铁磁材料和非磁性材料的界面之间具有至少两个接触点或交点。 分散铁磁材料溅射靶的非磁性材料颗粒的优点在于，通过溅射形成膜，可以降低加热等对基板的影响，可以通过DC溅射进行高速沉积，膜厚度 可以调节为薄，在溅射期间可以减少颗粒（灰尘）或结节的产生，可以降低质量的变化，从而提高质量生产率，可以实现细晶粒和高密度，并且非磁性材料颗粒 分散的铁磁材料溅射靶特别适合用作磁记录层。

公开(公告)号：US08980414B2

公开(公告)日：2015-03-17

申请号：US13823349

申请日：2012-08-30

申请人： Tomota Nagaura ,  Kazuhiko Sakaguchi

发明人： Tomota Nagaura ,  Kazuhiko Sakaguchi

IPC分类号： B32B15/00 ,  B32B15/20 ,  H05K1/09 ,  B32B15/01 ,  C25D1/04 ,  C25D3/04 ,  C25D3/12 ,  C25D3/38 ,  C25D3/58 ,  C25D5/14 ,  C25D7/06 ,  C25D9/08 ,  C23C28/02

CPC分类号： H05K1/09 ,  B32B15/01 ,  C23C18/165 ,  C23C18/31 ,  C23C28/023 ,  C25D1/04 ,  C25D3/04 ,  C25D3/12 ,  C25D3/14 ,  C25D3/16 ,  C25D3/38 ,  C25D3/562 ,  C25D3/565 ,  C25D3/58 ,  C25D5/14 ,  C25D7/0614 ,  C25D9/08 ,  C25D11/38 ,  H05K3/025 ,  H05K2201/0317 ,  H05K2201/032 ,  H05K2201/0338 ,  H05K2201/0355 ,  H05K2203/0307 ,  Y10T428/12438 ,  Y10T428/12493 ,  Y10T428/12514 ,  Y10T428/12611 ,  Y10T428/12667 ,  Y10T428/12861 ,  Y10T428/12882 ,  Y10T428/1291 ,  Y10T428/12931 ,  Y10T428/12944 ,  Y10T428/12958 ,  Y10T428/24917

摘要： The present invention provides a carrier-attached copper foil, wherein an ultrathin copper foil is not peeled from the carrier prior to the lamination to an insulating substrate, but can be peeled from the carrier after the lamination to the insulating substrate. A carrier-attached copper foil comprising a copper foil carrier, an intermediate layer laminated on the copper foil carrier, and an ultrathin copper layer laminated on the intermediate layer, wherein the intermediate foil is configured with a Ni layer in contact with an interface of the copper foil carrier and a Cr layer in contact with an interface of the ultrathin copper layer, said Ni layer containing 1,000-40,000 μg/dm2 of Ni and said Cr layer containing 10-100 μg/dm2 of Cr is provided.

摘要翻译： 本发明提供一种载体附着铜箔，其中在层压到绝缘基板之前，超薄铜箔不从载体剥离，而是可以在与绝缘基板层合之后从载体上剥离。 一种载体附着铜箔，包括铜箔载体，层压在所述铜箔载体上的中间层和层压在所述中间层上的超薄铜层，其中所述中间箔配置有与所述中间层的界面接触的Ni层 铜箔载体和与超薄铜层的界面接触的Cr层，所述Ni层含有1000-40,000μg/ dm 2的Ni，所述Cr层含有10-100μg/ dm 2的Cr。

公开(公告)号：US08936706B2

公开(公告)日：2015-01-20

申请号：US12935014

申请日：2009-03-27

申请人： Kei Koide

发明人： Kei Koide

IPC分类号： C23C14/34 ,  C23C14/06

CPC分类号： C23C14/3414 ,  C23C14/0688

摘要： Provided is a sputtering target with low generation of particles having a target surface in which intermetallic compounds, oxides, carbides, carbonitrides and other substances without ductility exist in a highly ductile matrix phase at a volume ratio of 1 to 50%, wherein a center-line average surface roughness Ra is 0.1 μm or less, a ten-point average roughness Rz is 0.4 μm or less, a distance between local peaks (roughness motif) AR is 120 μm or less, and an average length of waviness motif AW is 1500 μm or more. Provided are a sputtering target wherein the generation of nodules and particles upon sputtering can be prevented or inhibited by improving the target surface, which contains large amounts of substances without ductility; and a surface processing method thereof.

摘要翻译： 本发明提供一种溅射靶，其具有目标表面，其中金属间化合物，氧化物，碳化物，碳氮化物和其它没有延展性的物质以1〜50％的体积比存在于高延展性基体相中， 线平均表面粗糙度Ra为0.1μm以下，十点平均粗糙度Rz为0.4μm以下，局部峰（粗糙图案）AR之间的距离为120μm以下，波纹图案AW的平均长度为1500 μm以上。 提供一种溅射靶，其中通过改善包含大量没有延展性的物质的目标表面，可以防止或抑制溅射时产生结节和颗粒; 及其表面处理方法。

公开(公告)号：US08882975B2

公开(公告)日：2014-11-11

申请号：US12444859

申请日：2007-10-05

申请人： Masataka Yahagi ,  Hideyuki Takahashi ,  Hirohisa Ajima

发明人： Masataka Yahagi ,  Hideyuki Takahashi ,  Hirohisa Ajima

IPC分类号： C23C14/00 ,  C25B9/00 ,  C25B11/00 ,  C25B13/00 ,  B22F1/00 ,  B22F3/00 ,  C22C1/00 ,  C22C1/04 ,  C22C12/00 ,  C22C28/00 ,  C22C1/05 ,  C23C14/34 ,  C23C14/06 ,  G11B7/26

CPC分类号： C23C14/3414 ,  B22F2998/10 ,  C22C1/05 ,  C22C12/00 ,  C22C28/00 ,  C23C14/0623 ,  G11B7/266 ,  B22F9/082 ,  B22F3/14

摘要： Provided is an Sb—Te base alloy sinter sputtering target having Sb and Te as its primary component and comprising a structure in which Sb—Te base alloy particles are surrounded by fine carbon or boron particles; wherein, if the mean diameter of the Sb—Te base alloy particles is X and the particle size of carbon or boron is Y, Y/X is within the range of 1/10 to 1/10000. The present invention seeks to improve the Sb—Te base alloy sputtering target structure, inhibit the generation of cracks in the sintered target, and prevent the generation of arcing during the sputtering process.

摘要翻译： 提供具有Sb和Te作为其主要成分的Sb-Te基合金烧结溅射靶，并且包括其中Sb-Te基合金颗粒被细碳或硼颗粒包围的结构; 其中，如果Sb-Te基合金粒子的平均直径为X，碳或硼的粒径为Y，则Y / X为1/10〜1/10000的范围。 本发明寻求改进Sb-Te基合金溅射靶结构，抑制烧结靶产生裂纹，并防止在溅射过程中产生电弧。

公开(公告)号：US20140329107A1

公开(公告)日：2014-11-06

申请号：US14346025

申请日：2012-09-10

申请人： Yoshitaka Shibuya ,  Kazuhiko Fukamachi ,  Atsushi Kodama

发明人： Yoshitaka Shibuya ,  Kazuhiko Fukamachi ,  Atsushi Kodama

IPC分类号： H01B1/02 ,  B32B15/01

CPC分类号： H01B1/02 ,  B32B15/01 ,  B32B15/018 ,  C22C5/06 ,  C22C5/08 ,  C22C5/10 ,  C22C9/00 ,  C22C9/02 ,  C22C9/04 ,  C22C13/00 ,  C22C13/02 ,  C22C19/03 ,  C22C19/07 ,  C22C22/00 ,  C22C27/06 ,  C22C38/00 ,  C23C18/1651 ,  C23C18/1692 ,  C25D3/12 ,  C25D3/20 ,  C25D3/30 ,  C25D3/38 ,  C25D3/46 ,  C25D3/50 ,  C25D3/567 ,  C25D3/62 ,  C25D3/64 ,  C25D5/10 ,  C25D5/12 ,  C25D5/505 ,  H01R13/03 ,  H05K1/117 ,  H05K1/118 ,  H05K3/244 ,  H05K2201/0341 ,  Y10T428/12681 ,  Y10T428/12708 ,  Y10T428/12715 ,  Y10T428/12722

摘要： There are provided a metal material for electronic component which has low insertability/extractability, low whisker formability, and high durability, and a method for manufacturing the metal material. The metal material 10 for electronic components has a base material 11, an A layer 14 constituting a surface layer on the base material 11 and formed of Sn, In or an alloy thereof, and a B layer 13 constituting a middle layer provided between the base material 11 and the A layer 14 and formed of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir or an alloy thereof, wherein the surface layer (A layer) 14 has a thickness of 0.002 to 0.2 μm, and the middle layer (B layer) 13 has a thickness of 0.001 to 0.3 μm.

摘要翻译： 提供了具有低插入性/提取性，低晶须成形性和高耐久性的电子部件用金属材料以及金属材料的制造方法。 用于电子部件的金属材料10具有基材11，构成基材11的表层的A层14，其由Sn，In或其合金形成，B层13构成中间层， 材料11和A层14，由Ag，Au，Pt，Pd，Ru，Rh，Os，Ir或其合金形成，其中表面层（A层）14的厚度为0.002〜0.2μm， 中间层（B层）13的厚度为0.001〜0.3μm。

公开(公告)号：US20140318973A1

公开(公告)日：2014-10-30

申请号：US14009056

申请日：2012-03-28

申请人： Michiya Kohiki

发明人： Michiya Kohiki

IPC分类号： H01M4/66

CPC分类号： H01M4/661 ,  C25D1/04 ,  C25D5/48 ,  C25D7/06 ,  C25D11/38

摘要： The present invention provides an electrolytic copper foil that has a high normal tensile strength, a low decrease in tensile strength after a thermal history, and a low concentration of impurities in the copper foil and a method for producing the copper foil. Specifically, the electrolytic copper foil in which a sulfur concentration of the copper foil is not less than 10 ppm by mass but no more than 50 ppm by mass, wherein when lattices with a spacing of 10 nm in a STEM image observed with a scanning transmission electron microscope at a magnification of 1 million times are formed and intersections of each lattice are used as a measurement point for determining a sulfur concentration, there is a measurement point at which the sulfur concentration is higher as compared to the sulfur concentration of the copper foil.

摘要翻译： 本发明提供一种电解铜箔，其具有高的正常拉伸强度，热历史后的拉伸强度的低降低和铜箔中的杂质浓度低，以及铜箔的制造方法。 具体而言，铜箔的硫浓度为10质量ppm以上且50质量ppm以下的电解铜箔，其中，在扫描透射中观察到STEM图像中间隔为10nm的晶格 形成1万倍的倍率的电子显微镜，使用各格子的交点作为测定硫浓度的测定点，与铜箔的硫浓度相比，存在硫浓度高的测定点 。

公开(公告)号：US20140246399A1

公开(公告)日：2014-09-04

申请号：US14355348

申请日：2012-10-26

申请人： JX Nippon Mining & Metals Corporation

发明人： Yoshihiro Chiba

IPC分类号： C01B31/04 ,  B32B38/10 ,  B21B3/00 ,  C25F3/22

CPC分类号： B32B38/10 ,  B21B1/227 ,  B21B1/40 ,  B21B3/00 ,  B21B27/005 ,  B21B2003/005 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/186 ,  C22C9/00 ,  C22F1/00 ,  C22F1/08 ,  C23C16/0254 ,  C23C16/26 ,  C25F3/22 ,  Y10T428/12431

摘要： A copper foil for producing graphene having a ratio (Ra1/Ra2) between an arithmetic mean roughness Ra1 in a rolling direction and an arithmetic mean roughness Ra2 in a direction transverse to rolling direction of 0.7

摘要翻译： 用于制造石墨烯的铜箔，其在轧制方向上的算术平均粗糙度Ra1与横向轧制方向的方向上的算术平均粗糙度Ra2之比（Ra1 / Ra2）为0.7 <=（Ra1 / Ra2）<= 1.3。