摘要:
There are provided a metal material for electronic component which has low insertability/extractability, low whisker formability, and high durability, and a method for manufacturing the metal material. The metal material 10 for electronic components has a base material 11, an A layer 14 constituting a surface layer on the base material 11 and formed of Sn, In or an alloy thereof, and a B layer 13 constituting a middle layer provided between the base material 11 and the A layer 14 and formed of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir or an alloy thereof, wherein the surface layer (A layer) 14 has a thickness of 0.002 to 0.2 μm, and the middle layer (B layer) 13 has a thickness of 0.001 to 0.3 μm.
摘要:
The invention provides Cu—Ni—Si—Co—Cr copper alloys for electronic materials having excellent characteristics such as dramatically improved strength and electrical conductivity. In one aspect, the invention is a Cu—Ni—Si—Co—Cr copper alloy for electronic materials, containing about 0.5-about 2.5% by weight of Ni, about 0.5 -about 2.5% by weight of Co, about 0.30-about 1.2% by weight of Si, and about 0.09 -about 0.5% by weight of Cr, and the balance being Cu and unavoidable impurities, wherein the ratio of the total weight of Ni and Co to the weight of Si in the alloy composition satisfies the formula: about 4≦[Ni+Co]/Si≦about 5, and the ratio of Ni to Co in the alloy composition satisfies the formula: about 0.5≦Ni/Co≦about 2, and wherein Pc is equal to or less than about 15/1000 μm2, or Pc/P is equal to or less than about 0.3 wherein P is the number of inclusions dispersed in the alloy and having the size of 1 μm or more, and Pc is the number of inclusions, among those having the size of 1 μm or more, whose carbon concentration is 10% or more by weight.
摘要:
The invention provides Cu—Ni—Si—Co—Cr copper alloys for electronic materials having excellent characteristics such as dramatically improved strength and electrical conductivity. In one aspect, the invention is a Cu—Ni—Si—Co—Cr copper alloy for electronic materials, containing about 0.5-about 2.5% by weight of Ni, about 0.5-about 2.5% by weight of Co, about 0.30-about 1.2% by weight of Si, and about 0.09-about 0.5% by weight of Cr, and the balance being Cu and unavoidable impurities, wherein the ratio of the total weight of Ni and Co to the weight of Si in the alloy composition satisfies the formula: about 4≦[Ni+Co]/Si≦about 5, and the ratio of Ni to Co in the alloy composition satisfies the formula: about 0.5≦Ni/Co≦about 2, and wherein Pc is equal to or less than about 15/1000 μm2, or Pc/P is equal to or less than about 0.3 wherein P is the number of inclusions dispersed in the alloy and having the size of 1 μm or more, and Pc is the number of inclusions, among those having the size of 1 μm or more, whose carbon concentration is 10% or more by weight.
摘要翻译:本发明提供了具有优异特性的电子材料的Cu-Ni-Si-Co-Cr铜合金,例如显着提高的强度和导电性。 一方面,本发明是用于电子材料的Cu-Ni-Si-Co-Cr铜合金,其包含约0.5-约2.5重量%的Ni,约0.5-约2.5重量%的Co,约0.30-约 1.2重量%的Si和约0.09〜约0.5重量%的Cr,余量为Cu和不可避免的杂质,其中Ni和Co的总重量与合金组合物中的Si的重量比满足 式:约4 <= [Ni + Co] / Si <=约5,合金组成中Ni与Co的比例满足下式:约0.5 <= Ni / Co <= 2,其中Pc相等 或小于约15/1000mum2,或Pc / P等于或小于约0.3,其中P是分散在合金中并且具有1um或更大的尺寸的夹杂物的数量,Pc是夹杂物的数量 ,其中碳浓度为10重量%以上的大小为1μm以上的那些。
摘要:
Copper alloys having excellent strength while suppressing irregularity of wavelengths, etc., of the fluctuations and having excellent bendability are obtained while suppressing growth of crystal grains. The copper-based alloy contains 2.0 to 4.0 mass % of Ti, and the total content of unavoidable impurity elements Pb, Sn, Zn, Mn, Fe, Co, Ni, S, Si, Al, P, As, Se, Te, Sb, Bi, Au, and Ag is not more than 0.1 mass %, and contents of each element thereof is not more than 0.01 mass %, and not less than 80% of quality of a second-phase particles having an area of not less than 0.01 μm2 observed by a cross section speculum contains not less than 3% of the total amount of the above described unavoidable impurity elements in composition.
摘要:
Disclosed herein is a noble metal plated material having good solderability and bonderability and suited for use as parts of electronic and electric equipment as well as a strike plating solution useful in the formation of a primer plating upon production of the plated material. The strike plating solution comprises 5-300 g/l of nickel chloride, 5-300 g/l of cobalt chloride and 30-300 g/l of hydrochloric acid.
摘要:
The invention aims at providing high-strength copper alloy, especially phosphor bronze, with excellent bending workability. The excellently bendable high-strength copper alloy is obtained through grain size control whereby a finally cold rolled copper alloy with a tensile strength and 0.2% yield strength different by not more than 80 MPa is allowed to have characteristics such that its mean grain size (mGS) after annealing at 425° C. for 10,000 seconds is not more than 5 μm and the standard deviation of the mean grain size (σGS) is not more than ⅓×mGS. Improvements in characteristics presumably attributable to the synergistic effect of grain-boundary strengthening and dislocation strengthening are stably achieved by the adjustments of cold rolling and annealing conditions and by the study of the correlation between pertinent characteristic values after the final rolling. The method of processing the alloy comprises cold rolling to a reduction percentage of at least 45%, final annealing to the extent that the mean grain size (mGS) is not more than 3 μm and the standard deviation of the mean grain size (σGS) is not more than 2 μm, and final cold rolling to a reduction percentage of 10-45%.
摘要:
The invention provides Cu—Ni—Si alloys containing Co, and having excellent strength and conductivity. A copper alloy for electronic materials in accordance with the invention contains about 0.5-about 2.5% by weight of Ni, about 0.5-about 2.5% by weight of Co, about 0.30-about 1.2% by weight of Si, and the balance being Cu and unavoidable impurities, wherein the ratio of the total weight of Ni and Co to the weight of Si ([Ni+Co]/Si ratio) satisfies the formula: about 4≦[Ni+Co]/Si≦about 5, and the ratio of Ni to Co (Ni/Co ratio) satisfies the formula: about 0.5≦Ni/Co≦about 2.
摘要:
There are provided a metal material for electronic component which has low insertability/extractability, low whisker formability, and high durability, and a method for manufacturing the metal material. The metal material 10 for electronic components has a base material 11, an A layer 14 constituting a surface layer on the base material 11 and formed of Sn, In or an alloy thereof, and a B layer 13 constituting a middle layer provided between the base material 11 and the A layer 14 and formed of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir or an alloy thereof, wherein the surface layer (A layer) 14 has a thickness of 0.002 to 0.2 μm, and the middle layer (B layer) 13 has a thickness of 0.001 to 0.3 μm.
摘要:
The invention provides Cu—Ni—Si alloys containing Co, and having excellent strength and conductivity. A copper alloy for electronic materials in accordance with the invention contains about 0.5-about 2.5% by weight of Ni, about 0.5-about 2.5% by weight of Co, about 0.30-about 1.2% by weight of Si, and the balance being Cu and unavoidable impurities, wherein the ratio of the total weight of Ni and Co to the weight of Si ([Ni+Co]/Si ratio) satisfies the formula: about 4≦[Ni+Co]/Si≦about 5, and the ratio of Ni to Co (Ni/Co ratio) satisfies the formula: about 0.5≦Ni/Co≦about 2.
摘要:
The present invention provides Corson alloy having remarkably improved properties, in particular, by bringing out the effect of added Cr more efficiently. A copper alloy for electronic materials comprising 2.5-4.5% by mass of Ni; 0.50-1.2% by mass of Si; 0.0030-0.2% by mass of Cr; balance Cu and inevitable impurities, wherein the weight ratio of Ni to Si is in the range of 3 to 7 and the content of carbon is 50 ppm by mass or less is provided.