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    Nonmagnetic material particle dispersed ferromagnetic material sputtering target
    1.
    发明授权
    Nonmagnetic material particle dispersed ferromagnetic material sputtering target 有权
    非磁性材料颗粒分散铁磁材料溅射靶

    公开(公告)号：US09034153B2

    公开(公告)日：2015-05-19

    申请号：US12160042

    申请日：2006-12-26

    申请人： Kazuyuki Satoh

    发明人： Kazuyuki Satoh

    IPC分类号： C23C14/34 ,  G11B5/851 ,  H01F41/18

    CPC分类号： G11B5/851 ,  C23C14/3414 ,  H01F41/183

    摘要： Provided is a nonmagnetic material particle dispersed ferromagnetic material sputtering target comprising a material including nonmagnetic material particles dispersed in a ferromagnetic material. The nonmagnetic material particle dispersed ferromagnetic material sputtering target is characterized in that all particles of the nonmagnetic material with a structure observed on the material in its polished face have a shape and size that are smaller than all imaginary circles having a radius of 2 μm formed around an arbitrary point within the nonmagnetic material particles, or that have at least two contact points or intersection points between the imaginary circles and the interface of the ferromagnetic material and the nonmagnetic material. The nonmagnetic material particle dispersed ferromagnetic material sputtering target is advantageous in that, in the formation of a film by sputtering, the influence of heating or the like on a substrate can be reduced, high-speed deposition by DC sputtering is possible, the film thickness can be regulated to be thin, the generation of particles (dust) or nodules can be reduced during sputtering, the variation in quality can be reduced to improve the mass productivity, fine crystal grains and high density can be realized, and the nonmagnetic material particle dispersed ferromagnetic material sputtering target is particularly best suited for use as a magnetic recording layer.

    摘要翻译： 提供了一种分散铁磁材料溅射靶的非磁性材料颗粒，其包括分散在铁磁材料中的包含非磁性材料颗粒的材料。 散射铁磁材料溅射靶的非磁性材料颗粒的特征在于，在其抛光面的材料上观察到的具有结构的非磁性材料的所有颗粒的形状和尺寸都小于形成在周围的半径为2μm的全部假想圆 在非磁性材料颗粒内的任意点，或者在假想圆与铁磁材料和非磁性材料的界面之间具有至少两个接触点或交点。 分散铁磁材料溅射靶的非磁性材料颗粒的优点在于，通过溅射形成膜，可以降低加热等对基板的影响，可以通过DC溅射进行高速沉积，膜厚度 可以调节为薄，在溅射期间可以减少颗粒（灰尘）或结节的产生，可以降低质量的变化，从而提高质量生产率，可以实现细晶粒和高密度，并且非磁性材料颗粒 分散的铁磁材料溅射靶特别适合用作磁记录层。

    Method of producing mixed powder comprising noble metal powder and oxide powder, and mixed powder comprising noble metal powder and oxide powder
    5.
    发明授权
    Method of producing mixed powder comprising noble metal powder and oxide powder, and mixed powder comprising noble metal powder and oxide powder 有权
    包含贵金属粉末和氧化物粉末的混合粉末的制造方法以及包含贵金属粉末和氧化物粉末的混合粉末

    公开(公告)号：US08758476B2

    公开(公告)日：2014-06-24

    申请号：US12993133

    申请日：2009-08-18

    申请人： Atsutoshi Arakawa ,  Kazuyuki Satoh ,  Atsushi Sato

    发明人： Atsutoshi Arakawa ,  Kazuyuki Satoh ,  Atsushi Sato

    IPC分类号： B22F9/30 ,  C22B11/00 ,  C22B11/02 ,  C22C1/10 ,  C22C5/04

    CPC分类号： B22F9/30 ,  C22B11/00 ,  C22C1/10 ,  C22C5/04 ,  C22C32/0021

    摘要： Provided are a method of producing mixed powder comprising noble metal powder and oxide powder, wherein powder of ammonium chloride salt of noble metal and oxide powder are mixed, the mixed powder is subsequently roasted, and ammonium chloride is desorbed by the roasting process in order to obtain mixed powder comprising noble metal powder and oxide powder, and mixed powder comprising noble metal powder and oxide powder, wherein chlorine is less than 1000 ppm, nitrogen is less than 1000 ppm, 90% or more of the grain size of the noble metal powder is 20 μm or less, and 90% or more of the grain size of the oxide powder is 12 μm or less. Redundant processes in the production of noble metal powder are eliminated, and processes are omitted so that the inclusion of chlorine contained in the royal water and nitrogen responsible for hydrazine reduction reaction is eliminated as much as possible. Consequently, the present invention aims to omit the drying process at a high temperature and thereby prevent grain growth and aggregation, and further eliminate the pulverization and classification processes in order to considerably reduce the production cost.

    摘要翻译： 提供一种制备包含贵金属粉末和氧化物粉末的混合粉末的方法，其中混合贵金属和氧化物粉末的氯化铵盐的粉末，随后将该混合粉末进行焙烧，并通过焙烧过程解吸氯化铵，以便 获得包含贵金属粉末和氧化物粉末的混合粉末，以及含有贵金属粉末和氧化物粉末的混合粉末，其中氯小于1000ppm，氮小于1000ppm，贵金属粉末的粒径为90％以上 为20μm以下，氧化物粉末的粒径的90％以上为12μm以下。 消除贵金属粉末生产中的冗余工艺，省略工艺，尽可能地除去包含在负责肼还原反应的皇家水和氮中的氯。 因此，本发明的目的是在高温下省略干燥过程，从而防止晶粒生长和聚集，并且进一步消除粉碎和分级过程，以显着降低生产成本。

    Method of Storing Lanthanum Oxide Target, and Vacuum-Sealed Lanthanum Oxide Target
    6.
    发明申请
    Method of Storing Lanthanum Oxide Target, and Vacuum-Sealed Lanthanum Oxide Target 有权
    储存氧化镧靶和真空密封氧化镧靶的方法

    公开(公告)号：US20120045380A1

    公开(公告)日：2012-02-23

    申请号：US13319190

    申请日：2010-10-05

    申请人： Kazuyuki Satoh ,  Yoshimasa Koido

    发明人： Kazuyuki Satoh ,  Yoshimasa Koido

    IPC分类号： C01F17/00 ,  C23C14/08 ,  B65B31/02 ,  C23C14/34

    CPC分类号： C23C14/3407 ,  C04B35/50 ,  C23C14/3414

    摘要： A method of storing a sputtering target made of lanthanum oxide, wherein a lanthanum oxide target to which a lanthanum fluoride film was formed and lanthanum oxide powder are charged in a vacuum pack with an oxygen transmission rate of 0.1 cm3/m2 per 24 h at 1 atm or less and a moisture vapor transmission rate of 0.1 g/m2 per 24 h or less, and, after charging the target and the powder, the vacuum pack is subject to vacuum suction and sealing for storage. This invention aims to provide technology for enabling the long-term storage of a sputtering target in a usable state by devising the method of storing a target made of an oxide of lanthanum as a rare earth metal, and thereby inhibiting the pulverization phenomenon of the target caused by the hydration (hydroxylation) of such target due to residual air or the inclusion of air, and the pulverization phenomenon caused by the formation of carbonate.

    摘要翻译： 一种存储由氧化镧制成的溅射靶的方法，其中将形成有氟化镧薄膜的氧化镧靶标和氧化镧粉末在氧气透过率为0.1cm 3 / m 2/24小时的真空包装中装入1 atm以下，每24小时以上的湿气透过率为0.1g / m 2，并且在对靶和粉末进行充电之后，将真空包装真空抽吸并密封保存。 本发明的目的在于提供一种用于通过设计存储由稀土金属的镧氧化物制成的靶的方法，从而能够使溅射靶长期储存在可使用状态的技术，从而抑制靶的粉碎现象 由于残留空气或包含空气的这种目标物的水合（羟基化）引起的，以及由碳酸盐形成引起的粉碎现象。

    Method for Storing Target Comprising Rare Earth Metal or Oxide Thereof
    7.
    发明申请
    Method for Storing Target Comprising Rare Earth Metal or Oxide Thereof 审中-公开
    存储包含稀土金属或氧化物的靶材的方法

    公开(公告)号：US20110162322A1

    公开(公告)日：2011-07-07

    申请号：US13119377

    申请日：2009-10-23

    申请人： Kazuyuki Satoh ,  Yoshimasa Koido

    发明人： Kazuyuki Satoh ,  Yoshimasa Koido

    IPC分类号： B65B31/02

    CPC分类号： C23C14/3407 ,  C23F15/00

    摘要： Provided is a method for storing a target comprising a rare earth metal or oxide thereof, wherein oxide of the same rare earth metal as the material of the rare earth metal or its oxide target to be stored is introduced as a desiccant into a container or a film-type seal for storing the target, and the target is stored by sealing the storage container or the film-type seal. This invention aims to provide technology for enabling the long-term storage of a target by devising the method for storing a target comprising a rare earth metal or oxide thereof, and thereby inhibiting the pulverization of the target caused by the oxidation and hydroxylation of such target due to the ingress of air.

    摘要翻译： 提供了一种存储包含稀土金属或其氧化物的靶的方法，其中将与要存储的稀土金属或其氧化物靶材相同的稀土金属的氧化物作为干燥剂引入容器或 用于储存目标的薄膜式密封件，并且通过密封储存容器或薄膜型密封件来储存目标物。 本发明的目的在于提供一种用于通过设计包含稀土金属或其氧化物的靶的方法来实现目标的长期储存的技术，从而抑制由该靶的氧化和羟基化引起的靶的粉碎 由于空气进入。

    HIGH-PURITY LANTHANUM, METHOD FOR PRODUCING SAME, SPUTTERING TARGET COMPRISING HIGH-PURITY LANTHANUM, AND METAL GATE FILM COMPRISING HIGH-PURITY LANTHANUM AS MAIN COMPONENT
    9.
    发明申请
    HIGH-PURITY LANTHANUM, METHOD FOR PRODUCING SAME, SPUTTERING TARGET COMPRISING HIGH-PURITY LANTHANUM, AND METAL GATE FILM COMPRISING HIGH-PURITY LANTHANUM AS MAIN COMPONENT 审中-公开
    高纯度土耳其，其生产方法，包含高纯度土耳其的溅射目标和包含高纯度LANHANUM作为主要成分的金属盖膜

    公开(公告)号：US20140199203A1

    公开(公告)日：2014-07-17

    申请号：US14238209

    申请日：2012-09-04

    申请人： Masahiro Takahata ,  Kazuyuki Satoh ,  Takeshi Gohara ,  Satoyasu Narita

    发明人： Masahiro Takahata ,  Kazuyuki Satoh ,  Takeshi Gohara ,  Satoyasu Narita

    IPC分类号： C22C28/00 ,  C23C14/34 ,  C22B59/00

    CPC分类号： C23C14/3407 ,  C22B9/228 ,  C22B59/00 ,  C22C28/00 ,  C23C14/165 ,  C23C14/3414 ,  C25C3/34 ,  C25C7/005

    摘要： A high-purity lanthanum, characterized by having a purity of 5N or more excluding rare earth elements and gas components, and α-ray count number of 0.001 cph/cm2 or less. A method for producing the high-purity lanthanum characterized by obtaining lanthanum crystal by subjecting a crude lanthanum metal raw material having a purity of 4N or less excluding the gas component to molten salt electrolysis at a bath temperature of 450 to 700° C., subjecting the lanthanum crystal to de-salting treatment, and removing volatile substances by performing electron beam melting, wherein the high-purity lanthanum has a purity of 5N or more excluding rare earth elements and gas components, and α-ray count number of 0.001 cph/cm2 or less. The object of the present invention is providing a technique capable of efficiently and stably providing a high-purity lanthanum with low α-ray, a sputtering target made from the high-purity lanthanum, and a metal gate thin film having the high-purity lanthanum as the main component.

    摘要翻译： 除了稀土元素和气体成分以外，其纯度为5N以上的高纯度镧，α射线计数为0.001cph / cm 2以下。 一种高纯度镧的制造方法，其特征在于，在450〜700℃的浴温下，将纯度为4N以下的粗品镧金属原料除去气体成分进行熔融盐电解，得到镧结晶， 镧晶体进行脱盐处理，通过进行电子束熔融除去挥发性物质，其中除了稀土元素和气体成分之外，高纯度镧的纯度为5N以上，α射线计数为0.001cph / cm2以下。 本发明的目的是提供一种能够高效稳定地提供具有低α射线的高纯度镧，由高纯度镧制成的溅射靶和具有高纯度镧的金属栅极薄膜 作为主要组成部分。

    Method for Producing High-Purity Lanthanum, High-Purity Lanthanum, Sputtering Target Formed from High-Purity Lanthanum, and Metal Gate Film Having Highy-Purity Lanthanum as Main Component
    10.
    发明申请
    Method for Producing High-Purity Lanthanum, High-Purity Lanthanum, Sputtering Target Formed from High-Purity Lanthanum, and Metal Gate Film Having Highy-Purity Lanthanum as Main Component 有权
    高纯度镧，高纯镧，高纯镧形成的溅射靶和高纯镧作为主要成分的金属栅薄膜的制备方法

    公开(公告)号：US20130313659A1

    公开(公告)日：2013-11-28

    申请号：US13980072

    申请日：2012-01-17

    申请人： Masahiro Takahata ,  Kazuyuki Satoh ,  Satoyasu Narita ,  Takeshi Gohara

    发明人： Masahiro Takahata ,  Kazuyuki Satoh ,  Satoyasu Narita ,  Takeshi Gohara

    IPC分类号： H01L29/51 ,  C25C3/34

    CPC分类号： C25C3/34 ,  C22B9/22 ,  C22B59/00 ,  C22C28/00 ,  C23C14/3414 ,  H01L21/28079 ,  H01L29/517

    摘要： The present invention addresses the problem of providing a technique capable of efficiently and stably providing a method for producing high-purity lanthanum, the method characterized in that: a crude lanthanum oxide starting material having a purity of 2N-5N, excluding gas components, is used; the material is subjected to molten salt electrolysis at a bath temperature of 450-700° C. to produce lanthanum crystals; the lanthanum crystals are subsequently desalted: and electron beam melting is then performed to remove volatile substances. The present invention also addresses the problem of providing a technique capable of efficiently and stably providing high-purity lanthanum, high-purity lanthanum itself, a sputtering target formed from high-purity material lanthanum; and a thin film for metal gates that has high purity lanthanum as the main component.

    摘要翻译： 本发明解决提供能够高效稳定地提供高纯度镧的方法的技术的问题，其特征在于：除气体组分外，纯度为2N-5N的粗镧氧化物原料是 用过的; 在450-700℃的浴温下对该材料进行熔盐电解以产生镧晶; 随后将镧晶体脱盐：然后进行电子束熔化以除去挥发性物质。 本发明还涉及提供能够高效稳定地提供高纯度镧，高纯度镧本身，由高纯度材料镧形成的溅射靶的技术的问题， 以高纯度镧为主要成分的金属浇口薄膜。