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    Bonded die assembly containing a manganese-containing oxide bonding layer and methods for making the same
    82.
    发明授权
    Bonded die assembly containing a manganese-containing oxide bonding layer and methods for making the same 有权

    公开(公告)号：US11362079B2

    公开(公告)日：2022-06-14

    申请号：US16440183

    申请日：2019-06-13

    申请人： SANDISK TECHNOLOGIES LLC

    发明人： Chen Wu ,  Peter Rabkin ,  Masaaki Higashitani

    IPC分类号： H01L25/18 ,  H01L23/48 ,  H01L23/00 ,  H01L25/00 ,  H01L23/528 ,  H01L21/762 ,  H01L21/304 ,  H01L21/306 ,  H01L21/768 ,  H01L27/11551

    摘要： A method of forming a bonded assembly includes providing a first semiconductor die containing a first substrate, first semiconductor devices, first dielectric material layers overlying the first semiconductor devices, and first metal interconnect structures, providing a second semiconductor die containing a second substrate, second semiconductor devices, second dielectric material layers overlying the second semiconductor devices, and second metal interconnect structures, depositing a manganese layer on a top surface of the first dielectric material layers, disposing the second semiconductor die on the manganese layer such that a surface of the second dielectric material layers contacts the manganese layer, and performing a bonding anneal to bond the first semiconductor die to the second semiconductor die and to convert the manganese layer into a manganese-containing oxide layer, such that the manganese-containing oxide layer is bonded to the first dielectric material layers and the second dielectric material layers.

    BOOSTING READ SCHEME WITH BACK-GATE BIAS
    85.
    发明申请
    BOOSTING READ SCHEME WITH BACK-GATE BIAS 有权

    公开(公告)号：US20210174881A1

    公开(公告)日：2021-06-10

    申请号：US17173023

    申请日：2021-02-10

    申请人： SANDISK TECHNOLOGIES LLC

    发明人： Kiyohiko Sakakibara ,  Ippei Yasuda ,  Ken Oowada ,  Masaaki Higashitani

    IPC分类号： G11C16/26 ,  G11C16/04 ,  G11C16/08 ,  G11C16/24 ,  G11C11/56 ,  G11C16/34

    摘要： Methods for reducing read disturb using NAND strings with poly-silicon channels and p-type doped source lines are described. During a boosted read operation for a selected memory cell transistor in a NAND string, a back-gate bias or bit line voltage may be applied to a bit line connected to the NAND string and a source line voltage greater than the bit line voltage may be applied to a source line connected to the NAND string; with these bias conditions, electrons may be injected from the bit line and annihilated in the source line during the read operation. To avoid leakage currents through NAND strings in non-selected memory blocks, the threshold voltages of source-side select gate transistors of the NAND strings may be set to a negative threshold voltage that has an absolute voltage value greater than the source line voltage applied during the read operation.

    HOT-COLD VTH MISMATCH USING VREAD MODULATION
    88.
    发明申请
    HOT-COLD VTH MISMATCH USING VREAD MODULATION 审中-公开

    公开(公告)号：US20200321061A1

    公开(公告)日：2020-10-08

    申请号：US16909830

    申请日：2020-06-23

    申请人： SANDISK TECHNOLOGIES LLC

    发明人： Dae Wung Kang ,  Peter Rabkin ,  Masaaki Higashitani

    IPC分类号： G11C16/26 ,  G11C7/04 ,  G11C16/04 ,  G11C11/4074 ,  G11C11/56

    摘要： Methods and systems for improving the reliability of data stored within a semiconductor memory over a wide range of operating temperatures are described. The amount of shifting in the threshold voltages of memory cell transistors over temperature may depend on the location of the memory cell transistors within a NAND string. To compensate for these variations, the threshold voltages of memory cell transistors in the middle of the NAND string or associated with a range of word lines between the ends of the NAND string may be adjusted by increasing the word line voltages biasing memory cell transistors on the drain-side of the selected word line when the read temperature is greater than a first threshold temperature and/or decreasing the word line voltages biasing memory cell transistors on the source-side of the selected word line when the read temperature is less than a second threshold temperature.