公开(公告)号：US20100202297A1

公开(公告)日：2010-08-12

申请号：US12763351

申请日：2010-04-20

Applicant: Jun Liu ,  Yanjun Liu

Inventor： Jun Liu ,  Yanjun Liu

IPC: H04L12/26

CPC classification number: H04L45/50 ,  H04L43/0811 ,  H04L43/10 ,  H04L45/02 ,  H04L45/22 ,  H04L45/28

Abstract: A method, device, and system for traffic switching in Multi-Protocol Label Switching Traffic Engineering (MPLS TE) are disclosed. The method includes: transmitting traffic over a standby Label Switching Path (LSP) after detecting fault of an active LSP; detecting that the forwarding entry on the active LSP is delivered completely after the fault of the active LSP is rectified; and switching the traffic to the active LSP, and transmitting the traffic over the active LSP. The present invention ensures that the forwarding entry on the active LSP is delivered completely, and prevents packet loss and traffic loss in the case of switching the traffic back from the standby LSP to the active LSP, thus improving the user experience and enhancing the network availability and stability.

Abstract translation: 公开了一种多协议标签交换流量工程（MPLS TE）中流量交换的方法，设备和系统。 该方法包括：在检测到活跃LSP的故障后，通过备用标签交换路径（LSP）发送流量; 检测到活动LSP故障修复后，主动LSP上的转发表项完全发送; 并将流量切换到活动LSP，并通过主动LSP传输流量。 本发明确保了主动LSP上的转发表项完全传递，在备用LSP切换到主动LSP的情况下，防止报文丢失和流量丢失，提高用户体验，提高网络可用性 和稳定性。

公开(公告)号：US07773492B2

公开(公告)日：2010-08-10

申请号：US11405637

申请日：2006-04-18

Applicant: Jun Liu ,  Mike Violette ,  Gurtej Sandhu

Inventor： Jun Liu ,  Mike Violette ,  Gurtej Sandhu

IPC: G11B9/00

CPC classification number: G11B9/04

Abstract: A data storage device and methods for storing and reading data are provided. The data storage device includes a data storage medium and second device. The data storage medium has an insulating layer, a first electrode layer over the insulating layer and at least one layer of resistance variable material over the first electrode layer. The second device includes a substrate and at least one conductive point configured to electrically contact the data storage medium.

Abstract translation: 提供了一种用于存储和读取数据的数据存储装置和方法。 数据存储装置包括数据存储介质和第二装置。 数据存储介质具有绝缘层，绝缘层上的第一电极层和第一电极层上的至少一层电阻可变材料。 第二装置包括基板和被配置为电接触数据存储介质的至少一个导电点。

公开(公告)号：US20100177561A1

公开(公告)日：2010-07-15

申请号：US12352364

申请日：2009-01-12

Applicant: Jun Liu ,  Gurtej Sandhu

Inventor： Jun Liu ,  Gurtej Sandhu

IPC: G11C11/14 ,  G11C7/00 ,  H01L29/82

CPC classification number: H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/329 ,  H01F41/306 ,  H01F41/307 ,  H01L27/228 ,  Y10S977/70

Abstract: A magnetic cell structure including a nonmagnetic filament contact, and methods of fabricating the structure are provided. The magnetic cell structure includes a free layer, a pinned layer, an insulative layer between the free and pinned layers, and a nonmagnetic filament contact in the insulative layer which electrically connects the free and pinned layers. The nonmagnetic filament contact is formed from a nonmagnetic source layer, also between the free and pinned layers. The filament contact directs a programming current through the magnetic cell structure such that the cross sectional area of the programming current in the free layer is less than the cross section of the structure. The decrease in the cross sectional area of the programming current in the free layer enables a lower programming current to reach a critical switching current density in the free layer and switch the magnetization of the free layer, programming the magnetic cell.

Abstract translation: 提供包括非磁性细丝接触的磁性单元结构以及制造该结构的方法。 磁性单元结构包括自由层，钉扎层，自由层和被钉扎层之间的绝缘层，以及绝缘层中的非磁性细丝接触，其电连接自由层和被钉扎层。 非磁性细丝接触由非磁性源层形成，也在自由层和被钉扎层之间。 灯丝接触引导编程电流通过磁性电池结构，使得自由层中编程电流的横截面面积小于结构的横截面。 自由层中编程电流的横截面积的减小使编程电流能够达到自由层中的关键开关电流密度并切换自由层的磁化，对磁性单元进行编程。

公开(公告)号：US20100110783A1

公开(公告)日：2010-05-06

申请号：US12265340

申请日：2008-11-05

Applicant: Jun Liu ,  Gurtej Sandhu

Inventor： Jun Liu ,  Gurtej Sandhu

IPC: G11C11/02 ,  H01L29/82 ,  G11C11/416

CPC classification number: H01F10/329 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/1284 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3268

Abstract: A magnetic memory cell including a soft magnetic layer and a coupling layer, and methods of operating the memory cell are provided. The memory cell includes a stack with a free ferromagnetic layer and a pinned ferromagnetic layer, and a soft magnetic layer and a coupling layer may also be formed as layers in the stack. The coupling layer may cause antiferromagnetic coupling to induce the free ferromagnetic layer to be magnetized in a direction antiparallel to the magnetization of the soft magnetic layer, or the coupling layer may cause ferromagnetic coupling to induce the free ferromagnetic layer to be magnetized in a direction parallel to the magnetization of the soft magnetic layer. The coupling layer, through a coupling effect, reduces the critical switching current of the memory cell.

Abstract translation: 提供了包括软磁性层和耦合层的磁存储单元，以及操作存储单元的方法。 存储单元包括具有自由铁磁层和钉扎铁磁层的堆叠，并且软磁层和耦合层也可以形成为堆叠中的层。 耦合层可以引起反铁磁耦合以使自由铁磁层在与软磁层的磁化方向反平行的方向上被磁化，或者耦合层可以引起铁磁性耦合，以使得自由铁磁层在平行方向上被磁化 到软磁层的磁化。 耦合层通过耦合效应降低了存储单元的关键开关电流。

公开(公告)号：US20100106462A1

公开(公告)日：2010-04-29

申请号：US12259448

申请日：2008-10-28

Applicant: Jun Liu

Inventor： Jun Liu

IPC: G06F15/00 ,  G06F17/18 ,  G01M15/14

CPC classification number: G01M15/14

Abstract: Systems and methods for diagnosing gas turbine engine faults are provided. In this regard, a representative method includes: dynamically assessing detected symptoms based, at least in part, on failure rates of components of the gas turbine engine as functions of usage of the components such that suspected faults are identified.

Abstract translation: 提供了用于诊断燃气轮机发动机故障的系统和方法。 在这方面，代表性的方法包括：至少部分地基于燃气涡轮发动机的部件的故障率作为功能使用组件的动态评估检测到的症状，从而识别怀疑的故障。

公开(公告)号：US07695994B2

公开(公告)日：2010-04-13

申请号：US11739172

申请日：2007-04-24

Applicant: Jun Liu ,  Keith Hampton

Inventor： Jun Liu ,  Keith Hampton

IPC: H01L21/00

CPC classification number: H01L45/124 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1666

Abstract: A method of forming a layer of material on a sidewall of a via with good thickness control. The method involves forming a layer of material with a conventional deposition process. The material formed on a field region surrounding the via is removed with a sputter etch process. Another layer of material is deposited thereon, wherein the sputter etch-deposition cycle is repeated as necessary to achieve a desired sidewall thickness. With this method, the thickness of the material deposited on the sidewall is linearly dependent on the number of process cycles, thus providing good thickness control. The method may be used to form a resistance variable material, e.g., a phase-change material, on a via sidewall for use in a memory element.

Abstract translation: 在具有良好厚度控制的通路的侧壁上形成材料层的方法。 该方法包括用常规沉积工艺形成一层材料。 通过溅射蚀刻工艺去除在通孔周围的场区域上形成的材料。 在其上沉积另一层材料，其中根据需要重复溅射蚀刻沉积循环以实现期望的侧壁厚度。 使用这种方法，沉积在侧壁上的材料的厚度在线性上取决于工艺循环的数量，从而提供良好的厚度控制。 该方法可以用于在用于存储元件的通孔侧壁上形成电阻变化材料，例如相变材料。

公开(公告)号：US20100065806A1

公开(公告)日：2010-03-18

申请号：US12626126

申请日：2009-11-25

Applicant: Jun Liu

Inventor： Jun Liu

IPC: H01L45/00

CPC classification number: H01L27/2463 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/124 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1691

Abstract: A programmable resistance memory element and method of forming the same. The memory element includes a first electrode, a dielectric layer over the first electrode and a second electrode over the dielectric layer. The dielectric layer and the second electrode each have sidewalls. A layer of programmable resistance material, e.g., a phase change material, is in contact with the first electrode and at least a portion of the sidewalls of the dielectric layer and the second electrode. Memory devices including memory elements and systems incorporating such memory devices are also disclosed.

Abstract translation: 一种可编程电阻存储元件及其形成方法。 存储元件包括第一电极，位于第一电极上的电介质层和位于电介质层上的第二电极。 电介质层和第二电极各自具有侧壁。 一层可编程电阻材料（例如相变材料）与第一电极和电介质层和第二电极的侧壁的至少一部分接触。 还公开了包括存储器元件和并入这种存储器件的系统的存储器件。

公开(公告)号：US07666413B2

公开(公告)日：2010-02-23

申请号：US11068553

申请日：2005-02-28

Applicant: Jun Liu ,  Steven J. Shire

Inventor： Jun Liu ,  Steven J. Shire

IPC: A61K39/395 ,  C07K16/00

CPC classification number: A61K39/39591 ,  A61K9/0019 ,  A61K47/02 ,  A61K47/12 ,  A61K47/183 ,  Y10S435/80

Abstract: The present application concerns concentrated protein formulations with reduced viscosity, which are particularly suitable for subcutaneous administration. The application further concerns a method for reducing the viscosity of concentrated protein formulations.

Abstract translation: 本申请涉及具有降低粘度的浓缩蛋白质制剂，其特别适用于皮下给药。 该应用还涉及降低浓缩蛋白质制剂的粘度的方法。

公开(公告)号：US07606055B2

公开(公告)日：2009-10-20

申请号：US11419133

申请日：2006-05-18

Applicant: Jun Liu

Inventor： Jun Liu

IPC: G11C5/02

CPC classification number: G11C13/0004 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  G11C13/0002 ,  G11C13/003 ,  G11C17/16 ,  G11C2213/74 ,  G11C2213/79 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144

Abstract: An improved memory array architecture and cell design is disclosed in which the cell employs two access transistors. In one embodiment, the two access transistors in each cell are coupled at one of their channel terminals to a memory element, which in turn is connected to a bit line. The other of the channel terminals are effectively tied together via reference lines. The word lines (i.e., gates) of the two access transistors are also tied together. The result in a preferred embodiment is a cell having two access transistors wired and accessed in parallel. With such a configuration, the widths of the access transistors can be made one-half the width of more-traditional one-access-transistor designs, saving layout space in that (first) dimension. Moreover, because the word lines of adjacent cells will be deselected, the improved design does not require cell-to-cell isolation (e.g., trench isolation) in the other (second) dimension. The result, when applied to a phase change memory, comprises about a 37% reduction in layout area from previous cell designs.

Abstract translation: 公开了改进的存储器阵列结构和单元设计，其中单元采用两个存取晶体管。 在一个实施例中，每个单元中的两个存取晶体管在其一个通道端子处耦合到存储元件，存储元件又连接到位线。 另一个通道终端通过参考线实际连接在一起。 两个存取晶体管的字线（即，门）也被连接在一起。 优选实施例的结果是具有并联连接和访问的两个存取晶体管的单元。 通过这样的配置，可以使存取晶体管的宽度成为传统的一次存取晶体管设计的宽度的一半，从而节省了（第一）尺寸的布局空间。 此外，由于相邻单元的字线将被取消选择，所以改进的设计不需要另一（第二）尺寸的单元间隔离（例如沟槽隔离）。 结果，当应用于相变存储器时，包括比以前的单元设计大约减少37％的布局面积。

公开(公告)号：US20090251952A1

公开(公告)日：2009-10-08

申请号：US12099575

申请日：2008-04-08

Applicant: Yantao Ma ,  Jun Liu

Inventor： Yantao Ma ,  Jun Liu

IPC: G11C11/00 ,  G11C7/00

CPC classification number: G11C13/0007 ,  G11C11/5678 ,  G11C11/5685 ,  G11C13/0004 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0054 ,  G11C2013/0078 ,  G11C2211/5632 ,  G11C2211/5634 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/72 ,  G11C2213/79

Abstract: The present disclosure includes methods, devices, modules, and systems for sensing memory cells using a state machine. One method embodiment includes generating a first sensing reference according to a first output of a state machine. The method includes bifurcating a range of possible programmed levels to which a memory cell can be programmed with the first sensing reference. The method also includes generating a second sensing reference according to a second output of the state machine. The method further includes determining a programmed level of the memory cell with the second generated sensing reference.

Abstract translation: 本公开包括用于使用状态机来感测存储器单元的方法，设备，模块和系统。 一种方法实施例包括根据状态机的第一输出产生第一感测参考。 该方法包括将存储器单元可以用第一感测参考编程的可能编程电平的范围分叉。 该方法还包括根据状态机的第二输出产生第二检测参考。 该方法还包括利用第二生成的感测参考来确定存储器单元的编程电平。