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公开(公告)号：US20170198397A1
公开(公告)日：2017-07-13
申请号：US15472450
申请日：2017-03-29
发明人： Yasuaki KOMAE , Takashi NOGAMI , Kenji SHIRAKO
IPC分类号： C23C16/52 , H01L21/677 , H01L21/673 , H01L21/67 , H01L21/687
CPC分类号： C23C16/52 , C23C16/4409 , C23C16/4584 , H01L21/67126 , H01L21/67178 , H01L21/67303 , H01L21/67757 , H01L21/68707
摘要： A technique for improving stability and safety at the time of boat transfer is provided. A reaction tube configured to process a substrate, a seal cap, provided on an upper surface thereof with a substrate retainer for retaining the substrate, configured to close a furnace opening of the reaction tube, one of a first elevator and a second elevator configured to elevate the seal cap; and another of a first elevator and a second elevator configured to assist the one of the first elevator and the second elevator in elevating the seal cap.
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公开(公告)号：US20170195556A1
公开(公告)日：2017-07-06
申请号：US15314663
申请日：2015-05-29
发明人： Hirofumi EMI , Tomohiro AIKAWA , Masaru FUJII , Naoki SAOTOME , Kei TAKAHASHI , Shigeyuki MURATA , Atsushi HONDA
IPC分类号： H04N5/232 , H04N17/00 , H04N19/154 , H04N21/234 , G08B25/00 , H04N21/44 , H04N21/218 , H04N7/18 , H04N5/225
CPC分类号： H04N5/23222 , G06T2207/20172 , G08B13/19604 , G08B13/1961 , G08B25/00 , G08B29/00 , H04N5/225 , H04N5/2256 , H04N7/18 , H04N7/181 , H04N17/002 , H04N19/154 , H04N21/218 , H04N21/21805 , H04N21/23418 , H04N21/44008
摘要： In a monitoring system, each individual camera device divides image data acquired by an image sensor unit into a plurality of areas, and detects video-image abnormality from an average luminance signal value in each area or from a change thereof. The camera device that has detected video abnormality transmits video-image abnormality detection information to a server. In the plurality of areas, it is possible to use different detection algorithms such as a first algorithm in which it is determined that an abnormality has occurred when there is no change in the average luminance value, a second algorithm in which it is determined that an abnormality has occurred when there is a change in the average luminance value, and a third algorithm for observing a change in the video captured while a change is made to an aperture, exposure time, or the like.
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公开(公告)号：US09695509B2
公开(公告)日：2017-07-04
申请号：US14041447
申请日：2013-09-30
发明人： Makoto Hirano , Akinari Hayashi
IPC分类号： H01L21/677 , C23C16/44 , H01L21/67 , H01L21/673
CPC分类号： C23C16/4408 , H01L21/67017 , H01L21/67393 , H01L21/67757 , H01L21/67769 , H01L21/67772 , Y10T137/8593
摘要： A substrate processing apparatus includes a processing vessel configured to process a substrate; a first purging part configured to perform a first purge to supply inert gas at a first flow rate into a substrate container accommodating the substrate; and a second purging part configured to perform a second purge to supply inert gas at a second flow rate into the substrate container, the second flow rate being lower than the first flow rate.
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84.发明申请公开(公告)号：US20170186604A1
公开(公告)日：2017-06-29
申请号：US15386994
申请日：2016-12-21
发明人： Yugo ORIHASHI , Atsushi MORIYA
IPC分类号： H01L21/02 , C23C16/455 , C23C16/52
CPC分类号： H01L21/02211 , C23C16/0272 , C23C16/455 , C23C16/45523 , C23C16/45557 , C23C16/52 , H01L21/02164 , H01L21/0217 , H01L21/02271 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/0262 , H01L21/02639 , H01L21/67
摘要： A method of manufacturing a semiconductor device includes forming a seed layer on a substrate by alternately performing supplying a halogen-based first process gas to the substrate and supplying a non-halogen-based second process gas to the substrate, and forming a film on the seed layer by supplying a third process gas to the substrate. A pressure of a space where the substrate exists in the act of supplying the first process gas is set higher than a pressure of the space where the substrate exists in the act of supplying the second process gas.
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公开(公告)号：US20170183775A1
公开(公告)日：2017-06-29
申请号：US15388815
申请日：2016-12-22
发明人： Tetsuo YAMAMOTO
IPC分类号： C23C16/46 , H01L21/67 , C23C16/455 , C23C16/458 , C23C16/52
CPC分类号： C23C16/4412 , C23C16/345 , C23C16/45557 , C23C16/45565 , C23C16/4557 , C23C16/45572 , C23C16/463 , C23C16/52 , H01L21/67109 , H01L21/67167 , H01L21/6719 , H01L21/67259 , H01L21/67742 , H01L21/67748
摘要： The present disclosure provides a substrate processing apparatus capable of preventing a heating process from having adverse effects on an operation of supplying gas, even though a shower head is used to supply gas onto a substrate. The substrate processing apparatus includes: a process module having a process chamber where a substrate is processed; a substrate loading/unloading port; a cooling mechanism; a substrate support; a heating unit; a shower head including a dispersion plate made of a material having a first thermal expansion rate; a dispersion plate supporting unit made of a material having a second thermal expansion rate different from the first thermal expansion rate; a first position regulating part configured to regulate positions of the dispersion plate and the dispersion plate supporting unit; and a second position regulating part configured to regulate the positions of the dispersion plate and the dispersion plate supporting unit.
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86.发明授权公开(公告)号：US09691606B2
公开(公告)日：2017-06-27
申请号：US14794519
申请日：2015-07-08
IPC分类号： H01L21/00 , H01L21/02 , C23C16/30 , C23C16/455 , C23C16/458
CPC分类号： H01L21/0228 , C23C16/30 , C23C16/45531 , C23C16/45546 , C23C16/45578 , C23C16/4584 , H01L21/02126 , H01L21/0214 , H01L21/02167 , H01L21/0217 , H01L21/02211
摘要： There is provided a method of manufacturing a semiconductor device, including pre-treating a surface of an insulating film formed on a substrate by supplying a precursor containing a first element and a halogen element to the substrate; and forming a film containing the first element and a second element on the pre-treated surface of the insulating film by performing a cycle a predetermined number of times, the cycle including supplying the precursor to the substrate; and supplying a reactant containing the second element to the substrate, wherein the act of supplying the precursor and the act of supplying the reactant are performed non-simultaneously.
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公开(公告)号：US20170163379A1
公开(公告)日：2017-06-08
申请号：US15434237
申请日：2017-02-16
发明人： Kei ITO
CPC分类号： H04L1/0041 , H03M13/27 , H03M13/2792 , H03M13/3723 , H03M13/4138 , H03M13/45 , H03M13/612 , H03M13/6508 , H04L1/0047 , H04L1/005 , H04L1/0071 , H04L25/03891 , H04L27/0008 , H04L27/18 , H04L27/22 , H04L27/34 , H04L27/38
摘要： SISO decoding of a reception signal having a scrambled symbol arrangement is realized using a process having reduced complexity. Coordinates are generated for a reference point obtained by scrambling and mapping a symbol number not a symbol reference point position. This reference point simulates transmission-side scrambling and is generated for each symbol number by a first mapping unit. Because the binary expression of a corresponding original signal number is retained, a bit likelihood calculation unit can easily calculate a bit likelihood based on the distance between the reference point and a reception signal. The calculated bit likelihood is then deinterleaved and subjected to SISO error-correcting decoding. The thus obtained bit likelihood is then reinterleaved and used to calculate a symbol probability. Soft symbols are generated through the multiplication of all the calculated symbol probabilities by corresponding reference points output by a second mapping unit similar to the first mapping unit.
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公开(公告)号：US09666430B2
公开(公告)日：2017-05-30
申请号：US14597372
申请日：2015-01-15
发明人： Yasunobu Koshi , Keigo Nishida , Kiyohiko Maeda
CPC分类号： H01L21/02592 , C23C16/0236 , C23C16/24 , C23C16/45523 , C23C16/45544 , C23C16/52 , H01L21/0245 , H01L21/02532 , H01L21/0262
摘要： A film is formed on a substrate by performing a cycle at least twice, the cycle including a nucleus formation process for forming nuclei on the substrate and a nucleus growth suppression process for suppressing growth of the nuclei. A time required for the nucleus growth suppression process is less than or equal to a time required for the nucleus formation process. Alternatively, the nucleus formation process is further performed after the cycle is repeatedly performed a plurality of times.
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89.发明申请公开(公告)号：US20170117133A1
公开(公告)日：2017-04-27
申请号：US15347347
申请日：2016-11-09
IPC分类号： H01L21/02 , C23C16/455 , C23C16/44 , C23C16/40
CPC分类号： H01L21/0228 , C23C16/401 , C23C16/4412 , C23C16/45529 , C23C16/45531 , C23C16/45534 , C23C16/45546 , C23C16/45553 , C23C16/45557 , H01L21/02126 , H01L21/0214 , H01L21/02167 , H01L21/0217 , H01L21/02211 , H01L21/02334
摘要： A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: forming a first layer by supplying a precursor gas including a chemical bond of a first element and carbon and a first catalyst gas to the substrate; exhausting the precursor gas and the first catalyst gas through an exhaust system; forming a second layer by supplying a reaction gas including a second element and a second catalyst gas to the substrate to modify the first layer; and exhausting the reaction gas and the second catalyst gas through the exhaust system. At least in a specific cycle, the respective gases are supplied and confined in the process chamber while closing the exhaust system in at least one of the act of forming the first layer and the act of forming the second layer.
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90.发明申请公开(公告)号：US20170107620A1
公开(公告)日：2017-04-20
申请号：US15272798
申请日：2016-09-22
发明人： Shinobu SUGIURA , Yosuke KUWATA , Tomoyasu MIYASHITA , Atsushi UMEKAWA , Kazuhiro KIMURA , Akihiko HIRATSUKA , Kaoru KATAOKA , Ryosuke ARAI
IPC分类号： C23C16/46 , C23C16/455 , C23C16/52
CPC分类号： C23C16/4401 , C23C16/45525 , H01L21/67017 , H01L21/67109 , H01L21/67248
摘要： A heating part of covering and heating a gas pipe includes: a thermal insulation portion disposed outside a heat generation body; an enclosure configured to enclose the thermal insulation portion and the heat generation body; a fastening part installed outside the enclose and configured to fasten one end portion and the other end portion of the enclosure in a state in which the one end portion and the other end portion of the enclosure adjoin each other; and a temperature sensing part disposed at the side of the gas pipe with respect to the enclosure at a position facing a surface of the gas pipe and formed in a plate shape with a major surface thereof oriented toward the gas pipe.
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