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1.发明申请METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM 有权制造半导体器件的方法，基板处理装置和记录介质公开(公告)号：US20150357181A1
公开(公告)日：2015-12-10
申请号：US14728728
申请日：2015-06-02
IPC分类号： H01L21/02 , C23C16/50 , C23C16/455 , C23C16/52 , C23C16/46
CPC分类号： H01L21/0228 , C23C16/30 , C23C16/36 , C23C16/45536 , C23C16/52 , H01J37/32091 , H01J37/3244 , H01J37/32532 , H01L21/02126 , H01L21/0214 , H01L21/02211
摘要： Technique includes forming a film containing first element, second element and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing forming a first solid layer having thickness of more than one atomic layer and equal to or less than several atomic layers and containing chemical bonds of the first element and carbon by supplying a precursor having the chemical bonds to the substrate under a condition where the precursor is pyrolyzed and at least some of the chemical bonds contained in the precursor are maintained without being broken, and forming a second solid layer by plasma-exciting a reactant containing the second element and supplying the plasma-excited reactant to the substrate, or by plasma-exciting an inert gas and supplying the plasma-excited inert gas and a reactant containing the second element which is not plasma-excited to the substrate.
摘要翻译： 技术方案包括通过执行预定次数的循环在基板上形成含有第一元素，第二元素和碳的膜。 该循环包括非同时进行的形成第一固体层，该第一固体层的厚度大于一个原子层并且等于或小于几个原子层，并且通过将具有化学键的前体供给至该基底而含有第一元素和碳的化学键 在前体被热解并且前体中包含的至少一些化学键保持而不被破坏的条件下，并且通过等离子体激发含有第二元素的反应物并将等离子体激发的反应物供应到 衬底，或通过等离子体激发惰性气体并将等离子体激发的惰性气体和含有未被等离子体激发的第二元素的反应物提供给衬底。
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2.发明申请METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM 有权制造半导体器件的方法，基板处理装置和记录介质公开(公告)号：US20150255274A1
公开(公告)日：2015-09-10
申请号：US14634280
申请日：2015-02-27
IPC分类号： H01L21/02 , C23C16/52 , C23C16/455
CPC分类号： H01L21/02167 , C23C16/308 , C23C16/345 , C23C16/36 , C23C16/45531 , C23C16/45542 , C23C16/45544 , C23C16/45553 , C23C16/52 , H01L21/02126 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/0228
摘要： A technique includes forming a film containing a first element, a second element and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: forming a first layer containing the first element and carbon by supplying a precursor gas having a chemical bond of the first element and carbon from a first supply part to the substrate in a process chamber, and forming a second layer by supplying a reaction gas containing the second element from a second supply part to the substrate in the process chamber and supplying a plasma-excited inert gas from a third supply part to the substrate in the process chamber to modify the first layer, the third supply part being different from the second supply part.
摘要翻译： 一种技术包括通过执行预定次数的循环来在基板上形成含有第一元素，第二元素和碳的膜。 该循环包括非同时执行：通过在处理室中向第一供应部分提供具有第一元素和碳的化学键的前体气体至基底而形成含有第一元素和碳的第一层，并形成第二层 将来自第二供给部的含有第二元素的反应气体从处理室中的基板供给到处理室中，并将来自第三供给部的等离子体激发的惰性气体供给到处理室内的基板，以修饰第一层，第三层 供给部与第二供给部不同。
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3.发明申请METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM 有权制造半导体器件的方法，基板处理装置和记录介质公开(公告)号：US20140273507A1
公开(公告)日：2014-09-18
申请号：US14197920
申请日：2014-03-05
发明人： Yoshiro HIROSE , Ryuji YAMAMOTO , Atsushi SANO
CPC分类号： C23C16/36 , C23C16/45525 , H01L21/02167 , H01L21/02211 , H01L21/02274 , H01L21/0228
摘要： A method of manufacturing a semiconductor device is disclosed. The method includes forming a thin film having a borazine ring skeleton and containing a predetermined element, boron, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a precursor gas containing the predetermined element and a halogen element to the substrate; supplying a reaction gas including an organic borazine compound to the substrate; and supplying a carbon-containing gas to the substrate. In addition, the cycle is performed under a condition in which the borazine ring skeleton in the organic borazine compound is maintained.
摘要翻译： 公开了制造半导体器件的方法。 该方法包括通过执行预定次数的循环，在基板上形成具有环硼氮烷骨架并含有预定元素，硼，碳和氮的薄膜。 该循环包括将含有预定元素和卤素元素的前体气体供应至基底; 向所述基板供给包含有机环硼氮烷化合物的反应气体; 并向基板供给含碳气体。 另外，在保持有机环硼氮烷化合物中的环硼氮烷骨架的条件下进行循环。
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4.发明申请公开(公告)号：US20170117133A1
公开(公告)日：2017-04-27
申请号：US15347347
申请日：2016-11-09
IPC分类号： H01L21/02 , C23C16/455 , C23C16/44 , C23C16/40
CPC分类号： H01L21/0228 , C23C16/401 , C23C16/4412 , C23C16/45529 , C23C16/45531 , C23C16/45534 , C23C16/45546 , C23C16/45553 , C23C16/45557 , H01L21/02126 , H01L21/0214 , H01L21/02167 , H01L21/0217 , H01L21/02211 , H01L21/02334
摘要： A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: forming a first layer by supplying a precursor gas including a chemical bond of a first element and carbon and a first catalyst gas to the substrate; exhausting the precursor gas and the first catalyst gas through an exhaust system; forming a second layer by supplying a reaction gas including a second element and a second catalyst gas to the substrate to modify the first layer; and exhausting the reaction gas and the second catalyst gas through the exhaust system. At least in a specific cycle, the respective gases are supplied and confined in the process chamber while closing the exhaust system in at least one of the act of forming the first layer and the act of forming the second layer.
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公开(公告)号：US20160042940A1
公开(公告)日：2016-02-11
申请号：US14886768
申请日：2015-10-19
IPC分类号： H01L21/02 , C23C16/455 , C23C16/52
CPC分类号： H01L21/0228 , C23C16/06 , C23C16/14 , C23C16/45527 , C23C16/45544 , C23C16/45553 , C23C16/52 , C23C16/56 , H01L21/02123 , H01L21/02172 , H01L21/02205 , H01L21/02318 , H01L21/28079 , H01L21/28562 , H01L21/76877 , H01L29/517
摘要： A method of manufacturing a semiconductor device includes: (a) forming a first film containing a metal element on a substrate by performing a cycle a predetermined number of times, the cycle including: (a-1) supplying a first precursor gas being a fluorine-free inorganic gas containing the metal element to the substrate; and (a-2) supplying a first reactant gas having reducibility to the substrate; (b) forming a second film containing the metal element on the first film by performing a cycle a predetermined number of times, the cycle including: (b-1) supplying a second precursor gas containing the metal element and fluorine to the substrate; and (b-2) supplying a second reactant gas having reducibility to the substrate; and (c) forming a film containing the metal element and obtained by the first film and the second film being laminated on the substrate by performing the (a) and (b).
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6.发明申请METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM 有权制造半导体器件的方法，基板处理装置和记录介质公开(公告)号：US20150243499A1
公开(公告)日：2015-08-27
申请号：US14628963
申请日：2015-02-23
IPC分类号： H01L21/02 , C23C16/52 , C23C16/455 , C23C16/44 , C23C16/46
CPC分类号： C23C16/52 , C23C16/36 , C23C16/38 , C23C16/4412 , C23C16/45523 , C23C16/46 , H01L21/02126 , H01L21/02167 , H01L21/02271 , H01L21/0228
摘要： A technique includes forming a film containing a first element, a second element, and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: forming a first solid layer containing the first element and carbon, and having a thickness of more than one atomic layer and equal to or less than several atomic layers, by supplying a precursor gas having a chemical bond of the first element and carbon to the substrate and confining the precursor gas within the process chamber, under a condition in which the precursor gas is autolyzed and at least a part of the chemical bond of the first element and carbon is maintained without being broken; and forming a second solid layer by supplying a reaction gas containing the second element to the substrate to modify the first solid layer.
摘要翻译： 一种技术包括通过执行预定次数的循环来在基板上形成含有第一元素，第二元素和碳的膜。 该循环包括非同时执行：通过供给具有化学键的前体气体，形成含有第一元素和碳的第一固体层，并且具有多于一个原子层并且等于或小于几个原子层的厚度 第一元素和碳到基底并将前体气体限制在处理室内，在前体气体被自动分解并且第一元素和碳的至少一部分化学键保持而不被破坏的条件下; 以及通过将含有所述第二元素的反应气体供给到所述基板而形成第二固体层，以修饰所述第一固体层。
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7.发明申请METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM 审中-公开制造半导体器件的方法，基板处理装置和记录介质公开(公告)号：US20160365246A1
公开(公告)日：2016-12-15
申请号：US15175389
申请日：2016-06-07
发明人： Ryuji YAMAMOTO , Yoshiro HIROSE
IPC分类号： H01L21/02 , C23C16/455
CPC分类号： C23C16/02 , C23C16/24 , C23C16/45542 , C23C16/45546 , C23C16/45557 , H01L21/0245 , H01L21/02488 , H01L21/02532 , H01L21/0262
摘要： A method of manufacturing a semiconductor device includes forming a seed layer containing a predetermined element on a substrate by performing a process a predetermined number of times, and supplying a second precursor containing the predetermined element and not containing the ligand to the substrate to form a film containing the predetermined element on the seed layer. The process includes alternately performing: supplying a first precursor to the substrate to form an adsorption layer of the first precursor, the first precursor containing the predetermined element and a ligand which is coordinated to the predetermined element and which contains at least one of carbon or nitrogen, and supplying a ligand desorption material to the substrate to desorb the ligand from the adsorption layer of the first precursor.
摘要翻译： 制造半导体器件的方法包括：通过进行预定次数的工序，在基片上形成含有规定元素的籽晶层，将含有规定元素的第二前驱物，不含有配体的物质供给到基板上，形成膜 在种子层上含有预定的元素。 该方法包括交替执行：向基材提供第一前体以形成第一前体的吸附层，含有预定元素的第一前体和与预定元素配位并且含有至少一个碳或氮的配体 并将配体解吸材料供给到基板上以从第一前体的吸附层解吸配体。
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8.发明申请METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM 有权制造半导体器件的方法，基板处理装置和记录介质公开(公告)号：US20160225607A1
公开(公告)日：2016-08-04
申请号：US15010682
申请日：2016-01-29
IPC分类号： H01L21/02 , C23C16/455
CPC分类号： H01L21/0228 , C23C16/401 , C23C16/4412 , C23C16/45529 , C23C16/45531 , C23C16/45534 , C23C16/45546 , C23C16/45553 , C23C16/45557 , H01L21/02126 , H01L21/0214 , H01L21/02167 , H01L21/0217 , H01L21/02211 , H01L21/02334
摘要： A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: forming a first layer by supplying a precursor gas including a chemical bond of a first element and carbon and a first catalyst gas to the substrate; exhausting the precursor gas and the first catalyst gas through an exhaust system; forming a second layer by supplying a reaction gas including a second element and a second catalyst gas to the substrate to modify the first layer; and exhausting the reaction gas and the second catalyst gas through the exhaust system. At least in a specific cycle, the respective gases are supplied and confined in the process chamber while closing the exhaust system in at least one of the act of forming the first layer and the act of forming the second layer.
摘要翻译： 制造半导体器件的方法包括通过执行预定次数的周期在衬底上形成膜。 该循环包括非同时执行：通过将包含第一元素和碳和第一催化剂气体的化学键的前体气体供应到基底来形成第一层; 通过排气系统排出前体气体和第一催化剂气体; 通过向所述基板供给包括第二元素和第二催化剂气体的反应气体来形成第二层，以修饰所述第一层; 并通过排气系统排出反应气体和第二催化剂气体。 至少在特定循环中，各个气体在形成第一层的作用和形成第二层的作用中的至少一个中关闭排气系统的同时被供给并限制在处理室中。
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9.发明申请公开(公告)号：US20160153090A1
公开(公告)日：2016-06-02
申请号：US15011033
申请日：2016-01-29
CPC分类号： C23C16/52 , C23C16/36 , C23C16/38 , C23C16/4412 , C23C16/45523 , C23C16/46 , H01L21/02126 , H01L21/02167 , H01L21/02271 , H01L21/0228
摘要： A technique includes forming a film containing a first element, a second element, and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: forming a first solid layer containing the first element and carbon, and having a thickness of more than one atomic layer and equal to or less than several atomic layers, by supplying a precursor gas having a chemical bond of the first element and carbon to the substrate and confining the precursor gas within the process chamber, under a condition in which the precursor gas is autolyzed and at least a part of the chemical bond of the first element and carbon is maintained without being broken; and forming a second solid layer by supplying a reaction gas containing the second element to the substrate to modify the first solid layer.
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10.发明申请METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM 有权制造半导体器件的方法，基板处理装置和记录介质公开(公告)号：US20160064219A1
公开(公告)日：2016-03-03
申请号：US14838793
申请日：2015-08-28
IPC分类号： H01L21/02 , C23C16/455 , C23C16/52 , C23C16/46 , C23C16/458
CPC分类号： H01L21/02334 , C23C16/4405 , H01L21/02126 , H01L21/02167 , H01L21/02178 , H01L21/02183 , H01L21/02186 , H01L21/02194 , H01L21/02208 , H01L21/02211 , H01L21/0228 , H01L21/67
摘要： A technique includes loading a substrate into a process chamber, supporting the substrate by a mounting table having a heater therein in the process chamber, forming a film on the substrate by supplying a processing gas into the process chamber in a state where the mounting table having the substrate supported thereon is disposed in a first position and the heater is turned on, unloading the substrate on which the film is formed, and supplying a reactive gas into the process chamber in a state where the mounting table is disposed in a second position and the heater is turned on. The second position is closer to a ceiling portion in the process chamber than the first position.
摘要翻译： 一种技术包括将基板装载到处理室中，通过在处理室中具有加热器的安装台支撑基板，通过在处理室中将处理气体供给到处理室中，在该基板上形成膜，其中安装台具有 支撑在其上的基板设置在第一位置并且加热器被接通，卸载其上形成有膜的基板，并且在安装台设置在第二位置的状态下将反应性气体供应到处理室中，并且 加热器打开。 第二位置比第一位置更靠近处理室中的顶部。
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