公开(公告)号：US10056492B2

公开(公告)日：2018-08-21

申请号：US15597297

申请日：2017-05-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Masami Jintyou ,  Daisuke Kurosaki

IPC: H01L29/786 ,  H01L29/26 ,  H01L29/66

CPC classification number: H01L29/78606 ,  H01L29/26 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869

Abstract: A semiconductor device including a transistor is provided. The transistor includes a gate electrode, a first insulating film over the gate electrode, a second insulating film over the first insulating film, an oxide semiconductor film over the second insulating film, a source electrode and a drain electrode electrically connected to the oxide semiconductor film, a third insulating film over the source electrode, and a fourth insulating film over the drain electrode. A fifth insulating film including oxygen is provided over the transistor. The third insulating film includes a first portion, the fourth insulating film includes a second portion, and the fifth insulating film includes a third portion. The amount of oxygen molecules released from each of the first portion and the second portion is smaller than the amount of oxygen molecules released from the third portion when the amounts are measured by thermal desorption spectroscopy.

公开(公告)号：US09972718B2

公开(公告)日：2018-05-15

申请号：US15389846

申请日：2016-12-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Yukinori Shima ,  Hajime Tokunaga ,  Toshinari Sasaki ,  Keisuke Murayama ,  Daisuke Matsubayashi

IPC: H01L21/00 ,  H01L27/146 ,  H01L29/786 ,  H01L21/02 ,  H01L29/51 ,  H01L29/66 ,  H01L27/12 ,  H01L27/32

CPC classification number: H01L29/78606 ,  H01L21/02109 ,  H01L21/02263 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/51 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device includes a transistor including a gate electrode over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, and an oxide insulating film covering the transistor. The multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the oxide insulating film contains more oxygen than that in the stoichiometric composition, and in the transistor, by a bias-temperature stress test, threshold voltage does not change or the amount of the change in a positive direction or a negative direction is less than or equal to 1.0 V, preferably less than or equal to 0.5 V.

公开(公告)号：US09923097B2

公开(公告)日：2018-03-20

申请号：US14558857

申请日：2014-12-03

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima

IPC: H01L29/78 ,  H01L29/786 ,  H01L29/04 ,  H01L29/423 ,  H01L29/49

CPC classification number: H01L29/78606 ,  H01L29/045 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693

Abstract: A semiconductor device includes an oxide semiconductor film, a gate electrode overlapping the oxide semiconductor film with a gate insulating film therebetween, a nitride insulating film in contact with the oxide semiconductor film, and a conductive film in contact with the oxide semiconductor film. The oxide semiconductor film includes a first region in contact with the gate insulating film and a second region in contact with the conductive film. The second region contains an impurity element. The impurity element concentration of the second region is different from that of the first region.

公开(公告)号：US09905696B2

公开(公告)日：2018-02-27

申请号：US15450391

申请日：2017-03-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Toshinari Sasaki ,  Katsuaki Tochibayashi ,  Shunpei Yamazaki

IPC: H01L29/10 ,  H01L29/12 ,  H01L29/786 ,  H01L27/12 ,  H01L27/32 ,  H01L27/146 ,  G02F1/1368 ,  H01L27/15 ,  G02F1/1362

CPC classification number: H01L29/78606 ,  G02F1/13306 ,  G02F1/133345 ,  G02F1/1339 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2201/121 ,  G06F3/0412 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/14612 ,  H01L27/14616 ,  H01L27/15 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/66742 ,  H01L29/7869

Abstract: A change in electrical characteristics of a semiconductor device including an interlayer insulating film over a transistor including an oxide semiconductor as a semiconductor film is suppressed. The structure includes a first insulating film which includes a void portion in a step region formed by a source electrode and a drain electrode over the semiconductor film and contains silicon oxide as a component, and a second insulating film containing silicon nitride, which is provided in contact with the first insulating film to cover the void portion in the first insulating film. The structure can prevent the void portion generated in the first insulating film from expanding outward.

公开(公告)号：US09847358B2

公开(公告)日：2017-12-19

申请号：US15346173

申请日：2016-11-08

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima ,  Daisuke Kurosaki ,  Masataka Nakada ,  Shunpei Yamazaki

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1251 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/124 ,  H01L29/78603 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device including an oxide semiconductor in which on-state current is high is provided. The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. Furthermore, the first transistor and the second transistor are transistors having a top-gate structure. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. The first transistor provided in the driver circuit portion includes two gate electrodes between which the oxide semiconductor film is provided.

公开(公告)号：US09825181B2

公开(公告)日：2017-11-21

申请号：US15374356

申请日：2016-12-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi Tsubuku ,  Kazuya Sugimoto ,  Tsutomu Murakawa ,  Motoki Nakashima ,  Shinpei Matsuda ,  Noritaka Ishihara ,  Daisuke Kurosaki ,  Toshimitsu Obonai ,  Hiroshi Kanemura ,  Junichi Koezuka

IPC: H01L29/22 ,  H01L29/786 ,  H01L29/24 ,  H01L29/423 ,  H03K17/687 ,  H01L27/105 ,  G09G3/20

CPC classification number: H01L29/7869 ,  G09G3/2092 ,  H01L27/1052 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/78696 ,  H03K17/687

Abstract: A transistor in which a change in characteristics is small is provided. A circuit, a semiconductor device, a display device, or an electronic device in which a change in characteristics of the transistor is small is provided. The transistor includes an oxide semiconductor; a channel region is formed in the oxide semiconductor; the channel region contains indium, an element M, and zinc; the element M is one or more selected from aluminum, gallium, yttrium, tin, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium; a gate insulator contains silicon and oxygen whose atomic number is 1.5 times or more as large as the atomic number of silicon; the carrier density of the channel region is higher than or equal to 1×109 cm−3 and lower than or equal to 5×1016 cm−3; and the energy gap of the channel region is higher than or equal to 2.7 eV and lower than or equal to 3.1 eV.

公开(公告)号：US09818880B2

公开(公告)日：2017-11-14

申请号：US15012403

申请日：2016-02-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki Miyake ,  Junichi Koezuka ,  Kenichi Okazaki ,  Daisuke Kurosaki ,  Yukinori Shima ,  Satoru Saito

IPC: H01L29/10 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/124 ,  H01L29/78696

Abstract: To reduce parasitic capacitance in a semiconductor device having a transistor including an oxide semiconductor. The transistor includes a first gate electrode, a first gate insulating film over the first gate electrode, an oxide semiconductor film over the first gate insulating film, and source and drain electrodes electrically connected to the oxide semiconductor film. The oxide semiconductor film includes a first oxide semiconductor film on the first gate electrode side and a second oxide semiconductor film over the first oxide semiconductor film. The atomic proportion of In is larger than the atomic proportion of M (M is Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf) in the first oxide semiconductor film, and the atomic proportion of In in the second oxide semiconductor film is smaller than that in the first oxide semiconductor film.

公开(公告)号：US09786690B2

公开(公告)日：2017-10-10

申请号：US15385157

申请日：2016-12-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki Miyake ,  Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima ,  Shunpei Yamazaki

IPC: H01L27/15 ,  H01L27/12 ,  H01L27/32

CPC classification number: H01L27/1225 ,  H01L27/1237 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/7869

Abstract: A light-emitting device capable of suppressing variation in luminance among pixels is provided. A light-emitting device includes a pixel and first and second circuits. The first circuit has a function of generating a signal including a value of current extracted from the pixel. The second circuit has a function of correcting an image signal by the signal. The pixel includes at least a light-emitting element and first and second transistors. The first transistor has a function of controlling supply of the current to the light-emitting element by the image signal. The second transistor has a function of controlling extraction of the current from the pixel. A semiconductor film of each of the first and second transistors includes a first semiconductor region overlapping with a gate, a second semiconductor region in contact with a source or a drain, and a third semiconductor region between the first and second semiconductor regions.

公开(公告)号：US09780219B2

公开(公告)日：2017-10-03

申请号：US15351775

申请日：2016-11-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Toshinari Sasaki ,  Katsuaki Tochibayashi ,  Shunpei Yamazaki

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L27/146 ,  G02F1/133 ,  G02F1/1333 ,  G02F1/1339 ,  G02F1/1343 ,  G02F1/1368 ,  G06F3/041 ,  H01L27/32

CPC classification number: H01L29/78606 ,  G02F1/13306 ,  G02F1/133345 ,  G02F1/1339 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2201/121 ,  G06F3/0412 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/14612 ,  H01L27/14616 ,  H01L27/15 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/66742 ,  H01L29/7869

Abstract: A change in electrical characteristics of a semiconductor device including an interlayer insulating film over a transistor including an oxide semiconductor as a semiconductor film is suppressed. The structure includes a first insulating film which includes a void portion in a step region formed by a source electrode and a drain electrode over the semiconductor film and contains silicon oxide as a component, and a second insulating film containing silicon nitride, which is provided in contact with the first insulating film to cover the void portion in the first insulating film. The structure can prevent the void portion generated in the first insulating film from expanding outward.

公开(公告)号：US09722095B2

公开(公告)日：2017-08-01

申请号：US15434153

申请日：2017-02-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima ,  Takashi Hamochi ,  Yasutaka Nakazawa ,  Shunpei Yamazaki

IPC: H01L29/10 ,  H01L29/12 ,  H01L29/786 ,  H01L29/24 ,  H01L27/12 ,  H01L27/32

CPC classification number: H01L29/78696 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/7869 ,  H01L2029/7863

Abstract: A novel semiconductor device including an oxide semiconductor is provided. In particular, a planar semiconductor device including an oxide semiconductor is provided. A semiconductor device including an oxide semiconductor and having large on-state current is provided. The semiconductor device includes an oxide insulating film, an oxide semiconductor film over the oxide insulating film, a source electrode and a drain electrode in contact with the oxide semiconductor film, a gate insulating film between the source electrode and the drain electrode, and a gate electrode overlapping the oxide semiconductor film with the gate insulating film. The oxide semiconductor film includes a first region overlapped with the gate electrode and a second region not overlapped with the gate electrode, the source electrode, and the drain electrode. The first region and the second region have different impurity element concentrations. The gate electrode, the source electrode, and the drain electrode contain the same metal element.