-
公开(公告)号：US12078902B2
公开(公告)日：2024-09-03
申请号：US18216660
申请日：2023-06-30
IPC分类号： G02F1/136 , G02F1/1343 , G02F1/1362 , G02F1/1368 , H01L27/12 , H01L29/786 , G02F1/1333 , G02F1/1345
CPC分类号： G02F1/1368 , G02F1/13439 , G02F1/136277 , G02F1/136286 , H01L27/1225 , H01L27/1251 , H01L29/78648 , G02F1/13338 , G02F1/133388 , G02F1/13454 , G02F1/136295 , G02F1/13685
摘要： A liquid crystal display device with a high aperture ratio is provided. A liquid crystal display device with low power consumption is provided.
The display device includes a display portion and a driver circuit portion. The display portion includes a liquid crystal element, a first transistor, a scan line, and a signal line. The driver circuit portion includes a second transistor. The liquid crystal element includes a pixel electrode, a liquid crystal layer, and a common electrode. Each of the scan line and the signal line is electrically connected to the first transistor. The scan line and the signal line each include a metal layer. The structure of the first transistor is different from that of the second transistor. The first transistor is electrically connected to the pixel electrode. The first transistor includes a first region connected to the pixel electrode. The pixel electrode, the common electrode, and the first region have a function of transmitting visible light. Visible light passes through the first region and the liquid crystal element and is emitted to the outside of the display device.-
公开(公告)号：US12057459B2
公开(公告)日：2024-08-06
申请号：US17830546
申请日：2022-06-02
发明人： Junichi Koezuka , Masami Jintyou , Yukinori Shima , Daisuke Kurosaki , Masataka Nakada , Shunpei Yamazaki
IPC分类号： H01L27/12 , H01L29/786
CPC分类号： H01L27/1251 , H01L27/1225 , H01L27/1237 , H01L27/124 , H01L29/78603 , H01L29/78645 , H01L29/78648 , H01L29/7869 , H01L29/78696
摘要： A semiconductor device including an oxide semiconductor in which on-state current is high is provided. The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. Furthermore, the first transistor and the second transistor are transistors having a top-gate structure. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. The first transistor provided in the driver circuit portion includes two gate electrodes between which the oxide semiconductor film is provided.
-
公开(公告)号：US11552111B2
公开(公告)日：2023-01-10
申请号：US17043232
申请日：2019-04-08
IPC分类号： H01L27/00 , H01L29/00 , H01L27/12 , H01L21/426
摘要： A semiconductor device having favorable and stable electrical characteristics is provided. The semiconductor device includes a first and a second transistor over an insulating surface. The first and the second transistors each include a first insulating layer, a semiconductor layer over the first insulating layer, a second insulating layer over the semiconductor layer, and a first conductive layer overlapping with the semiconductor layer with the second insulating layer interposed therebetween. The first insulating layer includes a convex first region that overlaps with the semiconductor layer and a second region that does not and is thinner than the first region. The first conductive layer includes a part over the second region where a lower surface of the first conductive layer is positioned below a lower surface of the semiconductor layer. The second transistor further includes a third conductive layer overlapping with the semiconductor layer with the first insulating layer interposed therebetween.
-
公开(公告)号：US11489076B2
公开(公告)日：2022-11-01
申请号：US16918472
申请日：2020-07-01
发明人： Shunpei Yamazaki , Junichi Koezuka , Kenichi Okazaki , Yukinori Shima , Shinpei Matsuda , Haruyuki Baba , Ryunosuke Honda
IPC分类号： H01L29/786 , H01L29/778 , H01L27/12 , H01L29/66 , H01L29/24
摘要： To improve field-effect mobility and reliability in a transistor including an oxide semiconductor film. A semiconductor device includes a transistor including an oxide semiconductor film. The transistor includes a region where the maximum value of field-effect mobility of the transistor at a gate voltage of higher than 0 V and lower than or equal to 10 V is larger than or equal to 40 and smaller than 150; a region where the threshold voltage is higher than or equal to minus 1 V and lower than or equal to 1 V; and a region where the S value is smaller than 0.3 V/decade.
-
公开(公告)号：US11424334B2
公开(公告)日：2022-08-23
申请号：US16758091
申请日：2018-10-23
IPC分类号： H01L27/00 , H01L29/00 , G02F1/1368 , H01L29/423 , H01L27/12 , H01L29/51
摘要： A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided.
The semiconductor device includes a first insulating layer, a second insulating layer, a third insulating layer, a fourth insulating layer, a semiconductor layer, and a first conductive layer. The second insulating layer is positioned over the first insulating layer and the island-shaped semiconductor layer is positioned over the second insulating layer. The second insulating layer has an island shape having an end portion outside a region overlapping with the semiconductor layer. The fourth insulating layer covers the second insulating layer, the semiconductor layer, the third insulating layer, and the first conductive layer, is in contact with part of a top surface of the semiconductor layer, and is in contact with the first insulating layer outside the end portion of the second insulating layer. The semiconductor layer contains a metal oxide, the second insulating layer and the third insulating layer contain an oxide, the first insulating layer contains a metal oxide or a nitride, and the fourth insulating layer contains a metal nitride.-
公开(公告)号：US11380802B2
公开(公告)日：2022-07-05
申请号：US17160435
申请日：2021-01-28
IPC分类号： H01L27/15 , H01L29/786 , H01L29/423 , H01L27/12 , H01L29/66
摘要： To reduce defects in an oxide semiconductor film in a semiconductor device. To improve electrical characteristics of and reliability in the semiconductor device including an oxide semiconductor film. A method for manufacturing a semiconductor device includes the steps of forming a gate electrode and a gate insulating film over a substrate, forming an oxide semiconductor film over the gate insulating film, forming a pair of electrodes over the oxide semiconductor film, forming a first oxide insulating film over the oxide semiconductor film and the pair of electrodes by a plasma CVD method in which a film formation temperature is 280° C. or higher and 400° C. or lower, forming a second oxide insulating film over the first oxide insulating film, and performing heat treatment at a temperature of 150° C. to 400° C. inclusive, preferably 300° C. to 400° C. inclusive, further preferably 320° C. to 370° C. inclusive.
-
公开(公告)号：US11374117B2
公开(公告)日：2022-06-28
申请号：US16971061
申请日：2019-02-22
发明人： Kenichi Okazaki , Yukinori Shima
IPC分类号： H01L29/786 , H01L29/66 , G02F1/1368 , H01L21/426 , H01L21/4763 , H01L27/12 , H01L21/02 , H01L21/385
摘要： A semiconductor device having favorable electrical characteristics is provided. The semiconductor device is manufactured by a first step of forming a semiconductor layer containing a metal oxide, a second step of forming a first insulating layer, a third step of forming a first conductive film over the first insulating layer, a fourth step of etching part of the first conductive film to form a first conductive layer, thereby forming a first region over the semiconductor layer that overlaps with the first conductive layer and a second region over the semiconductor layer that does not overlap with the first conductive layer, and a fifth step of performing first treatment on the conductive layer. The first treatment is plasma treatment in an atmosphere including a mixed gas of a first gas containing an oxygen element but not containing a hydrogen element, and a second gas containing a hydrogen element but not containing an oxygen element.
-
公开(公告)号：US11063125B2
公开(公告)日：2021-07-13
申请号：US16739647
申请日：2020-01-10
发明人： Yasuharu Hosaka , Toshimitsu Obonai , Yukinori Shima , Masami Jintyou , Daisuke Kurosaki , Takashi Hamochi , Junichi Koezuka , Kenichi Okazaki , Shunpei Yamazaki
IPC分类号： H01L29/24 , H01L29/786 , C04B35/622 , C04B35/453 , H01L27/12 , H01L29/778 , C23C14/58 , C23C14/08 , C04B35/01 , C03C17/245
摘要： A metal oxide film includes indium, M, (M is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.
-
公开(公告)号：US10957801B2
公开(公告)日：2021-03-23
申请号：US16481512
申请日：2018-01-26
摘要： A semiconductor device which has favorable electrical characteristics is provided. A method for manufacturing a semiconductor device with high productivity is provided. A method for manufacturing a semiconductor device with a high yield is provided.
A method for manufacturing a semiconductor device includes a first step of forming a first insulating layer containing silicon and nitrogen, a second step of adding oxygen in a vicinity of a surface of the first insulating layer, a third step of forming a semiconductor layer containing a metal oxide over and in contact with the first insulating layer, a fourth step of forming a second insulating layer containing oxygen over and in contact with the semiconductor layer, a fifth step of performing plasma treatment in an atmosphere containing oxygen at a first temperature, a sixth step of performing plasma treatment in an atmosphere containing oxygen at a second temperature lower than the first temperature, and a seventh step of forming a third insulating layer containing silicon and nitrogen over the second insulating layer.-
公开(公告)号：US10749015B2
公开(公告)日：2020-08-18
申请号：US16429176
申请日：2019-06-03
发明人： Junichi Koezuka , Yukinori Shima , Hajime Tokunaga , Toshinari Sasaki , Keisuke Murayama , Daisuke Matsubayashi
IPC分类号： H01L29/66 , H01L21/02 , H01L29/51 , H01L29/786 , H01L27/12
摘要： To reduce defects in an oxide semiconductor film in a semiconductor device. To improve the electrical characteristics and the reliability of a semiconductor device including an oxide semiconductor film. In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.
-
-
-
-
-
-
-
-
-
搜索结果
167 条记录 (耗时 0.039 秒)
