公开(公告)号：US10937624B2

公开(公告)日：2021-03-02

申请号：US16197249

申请日：2018-11-20

Applicant: APPLIED Materials, Inc.

Inventor： Alexandre Likhanskii ,  Frank Sinclair ,  Shengwu Chang

IPC: H01J37/147 ,  H01J37/08 ,  H01J37/12 ,  H01J37/317

Abstract: An apparatus is provided. The apparatus may include a main chamber, an entrance tunnel, the entrance tunnel having an entrance axis extending into the main chamber; an exit tunnel, connected to the main chamber and defining an exit axis, wherein the entrance tunnel and the exit tunnel define a beam bend of less than 25 degrees therebetween, and an electrode assembly, disposed in the main chamber, and defining a beam path between the entrance tunnel and the exit tunnel. The electrode assembly may include an upper electrode, disposed on a first side of the beam path, and a plurality of lower electrodes, disposed on a second side of the beam path, the plurality of lower electrodes comprising at least three electrodes.

公开(公告)号：US10811214B2

公开(公告)日：2020-10-20

申请号：US16415255

申请日：2019-05-17

Applicant: APPLIED Materials, Inc.

Inventor： Julian G. Blake ,  Frank Sinclair

IPC: H01J37/09 ,  H01J37/317

Abstract: An ion implanter. The ion implanter may include a beamline, the beamline defining an inner wall, surrounding a cavity, the cavity arranged to conduct an ion beam. The ion implanter may also include a low emission insert, disposed on the inner wall, and further comprising a 12C layer, the 12C layer having an outer surface, facing the cavity.

公开(公告)号：US10748738B1

公开(公告)日：2020-08-18

申请号：US16355997

申请日：2019-03-18

Applicant: APPLIED Materials, Inc.

Inventor： Bon-Woong Koo ,  Svetlana Radovanov ,  Frank Sinclair ,  You Chia Li ,  Peter Ewing ,  Ajdin Sarajlic ,  Christopher A. Rowland ,  Nunzio Carbone

IPC: H01J37/08 ,  H01J37/317

Abstract: Provided herein are approaches for increasing efficiency of ion sources. In some embodiments, an apparatus, such as an ion source, may include a chamber housing having a first end wall and a second end wall, and an extraction plate coupled to at least one of the first end wall and the second end wall. The extraction plate may include an extraction aperture. The apparatus may further include a tubular cathode extending between the first end wall and the second end wall.

公开(公告)号：US20200161078A1

公开(公告)日：2020-05-21

申请号：US16197249

申请日：2018-11-20

Applicant: APPLIED Materials, Inc.

Inventor： Alexandre Likhanskii ,  Frank Sinclair ,  Shengwu Chang

IPC: H01J37/08 ,  H01J37/12 ,  H01J37/317 ,  H01J37/147

Abstract: An apparatus is provided. The apparatus may include a main chamber, an entrance tunnel, the entrance tunnel having an entrance axis extending into the main chamber; an exit tunnel, connected to the main chamber and defining an exit axis, wherein the entrance tunnel and the exit tunnel define a beam bend of less than 25 degrees therebetween, and an electrode assembly, disposed in the main chamber, and defining a beam path between the entrance tunnel and the exit tunnel. The electrode assembly may include an upper electrode, disposed on a first side of the beam path, and a plurality of lower electrodes, disposed on a second side of the beam path, the plurality of lower electrodes comprising at least three electrodes.

公开(公告)号：US12278124B2

公开(公告)日：2025-04-15

申请号：US17513241

申请日：2021-10-28

Applicant: Applied Materials, Inc.

Inventor： D. Jeffrey Lischer ,  Bon-Woong Koo ,  Dawei Sun ,  Chi-Yang Cheng ,  Paul Joseph Murphy ,  Frank Sinclair ,  Gregory Edward Stratoti ,  Tseh-Jen Hsieh ,  Wayne Chen ,  Guy Oteri

IPC: H01L21/67 ,  G05D22/02

Abstract: A load lock in which the pumping speed is controlled so as to minimize the possibility of condensation is disclosed. The load lock is in communication with a vacuum pump and a valve. A controller is used to control the valve such that the supersaturation ratio within the load lock does not exceed a predetermined threshold, which is less than or equal to the critical value at which vapor condenses. In certain embodiments, a computer model is used to generate a profile, which may be a pumping speed profile or a pressure profile, and the valve is controlled according to the profile. In another embodiment, the load lock comprises a temperature sensor and a pressure sensor. The controller may calculate the supersaturation ratio based on these parameters and control the valve accordingly.

公开(公告)号：US20250095952A1

公开(公告)日：2025-03-20

申请号：US18794728

申请日：2024-08-05

Applicant: Applied Materials, Inc.

Inventor： Ori Noked ,  Daniel A. Hall ,  Frank Sinclair ,  Timothy Thomas ,  Samuel Charles Howells ,  Douglas E. Holmgren

IPC: H01J37/20 ,  H01J37/22 ,  H01J37/244 ,  H01J37/30 ,  H01J37/317

Abstract: An ion implanter, including an ion source generating an ion beam, a set of beamline components directing the ion beam to a substrate along a beam axis, normal to a reference plane, a process chamber housing the substrate to receive the ion beam, and a conoscopy system. The conoscopy system may include: an illumination source directing light to a substrate position, a first polarizer assembly, comprising a first polarizer element and first pair of lenses, disposed on opposite sides of the first polarizer element, and arranged to focus the light at the substrate position; a second polarizer assembly, disposed to receive the light after passing through the substrate position, including a second polarizer element and a second pair of lenses disposed on opposite sides of the second polarizer element, and arranged to focus the light at a sensor, disposed in a detector plane of a detector.

公开(公告)号：US20240339287A1

公开(公告)日：2024-10-10

申请号：US18131271

申请日：2023-04-05

Applicant: Applied Materials, Inc.

Inventor： Alexandre Likhanskii ,  Nirbhav Singh Chopra ,  Peter F. Kurunczi ,  Anthony Renau ,  Joseph C. Olson ,  Frank Sinclair

IPC: H01J37/05 ,  H01J37/147 ,  H01J37/317

CPC classification number: H01J37/05 ,  H01J37/1472 ,  H01J37/3171 ,  H01J37/12 ,  H01J2237/053 ,  H01J2237/057 ,  H01J2237/1207 ,  H01J2237/2505

Abstract: An apparatus may include an electrodynamic mass analysis (EDMA) assembly disposed downstream from the convergent ion beam assembly. The EDMA assembly may include a first stage, comprising a first upper electrode, disposed above a beam axis, and a first lower electrode, disposed below the beam axis, opposite the first upper electrode. The EDMA assembly may also include a second stage, disposed downstream of the first stage and comprising a second upper electrode, disposed above the beam axis, and a second lower electrode, disposed below the beam axis. The EDMA assembly may further include a deflection assembly, disposed between the first stage and the second stage, the deflection assembly comprising a blocker, disposed along the beam axis, an upper deflection electrode, disposed on a first side of the blocker, and a lower deflection electrode, disposed on a second side of the blocker.

公开(公告)号：US12106925B2

公开(公告)日：2024-10-01

申请号：US17560632

申请日：2021-12-23

Applicant: Applied Materials, Inc.

Inventor： Frank Sinclair ,  Klaus Becker ,  Joseph C. Olson ,  Tseh-Jen Hsieh ,  Morgan Patrick Dehnel ,  Anand Mathai George

IPC: H01J27/18 ,  H01J27/02

CPC classification number: H01J27/028 ,  H01J27/18

Abstract: An apparatus may include a cyclotron to receive an ion beam as an incident ion beam at an initial energy, and output the ion beam as an accelerated ion beam at an accelerated ion energy. The apparatus may further include an RF source to output an RF power signal to the cyclotron chamber, the RF power source comprising a variable power amplifier, and a movable stripper, translatable to intercept the ion beam within the cyclotron at a continuum of different positions.

公开(公告)号：US20240266233A1

公开(公告)日：2024-08-08

申请号：US18431884

申请日：2024-02-02

Applicant: Applied Materials, Inc.

Inventor： Wonjae Lee ,  Pradeep Kumar Subrahmanyan ,  D. Jeffrey Lischer ,  Frank Sinclair

IPC: H01L21/66 ,  C23C14/48 ,  C23C14/54 ,  H01L21/02

CPC classification number: H01L22/20 ,  C23C14/48 ,  C23C14/54 ,  H01L21/02321 ,  H01L21/02351 ,  H01L21/0217

Abstract: Disclosed systems and techniques are directed to correcting an out-of-plane (OPD) deformation of a substrate by causing a stress-compensation layer (SCL) to be deposited on the substrate, obtaining, using optical inspection data, a profile of the OPD of the substrate. The techniques further include obtaining a dataset with a representation of an influence function for the substrate, the influence function characterizing a deformation response of the substrate caused by a point-like mechanical influence. The techniques further include performing a regression computation to determine, based at least on the profile of the OPD of the substrate and the influence function, a distribution of a stress-mitigation irradiation of the SCL that mitigate the OPD of the substrate. The techniques further include performing, using the determined distribution of the stress-mitigation irradiation, a stress-mitigation irradiation of the SCL.

公开(公告)号：US20240266230A1

公开(公告)日：2024-08-08

申请号：US18431834

申请日：2024-02-02

Applicant: Applied Materials, Inc.

Inventor： Wonjae Lee ,  Pradeep Kumar Subrahmanyan ,  D. Jeffrey Lischer ,  Frank Sinclair

IPC: H01L21/66 ,  G01B11/16 ,  H01L21/3115 ,  H01L21/67

CPC classification number: H01L22/12 ,  G01B11/16 ,  H01L21/31155 ,  H01L21/67288

Abstract: Disclosed systems and techniques are directed to correct an out-of-plane deformation (OPD) of a substrate (e.g., wafer) by identifying, using optical inspection data, a profile of the OPD of the substrate and performing a polynomial decomposition of the profile to determine polynomial coefficients characterizing elemental deformation shapes of the substrate. The techniques further include identifying, based on the polynomial coefficients, characteristics of a stress-compensation layer (SCL) for the substrate and causing the SCL to be deposited on the substrate. The techniques further include performing statistical simulations to identify settings for a non-uniform stress-mitigation irradiation of the SCL, by sampling from one or more statistical distributions associated with previously performed stress-mitigation irradiations, and performing the non-uniform stress-mitigation irradiation of the SCL using the identified settings.