摘要:
A method for detecting and compensating for positional displacements of a photolithographic mask unit, includes providing mask production data for the writing of the mask unit with an electron beam. A structure density of the mask unit is input and an electron beam deflection is brought about on the mask unit in dependence on the determined structure density of the mask unit. The mask production data are corrected through the use of the determined electron beam deflection, in order to obtain corrected mask production data, and the corrected mask production data are output. A lithography apparatus for mask units with correction of positional displacements of the mask unit, is also provided.
摘要:
This invention relates to a multi-layer lithographically fabricated device used to produce improved thin-film recording heads. It further relates to a focused particle beam system for milling a recording head pole-tip assembly without irradiating a sensitive structure, e.g. a read head, of the recording head. The invention precisely forms a pole-tip assembly by milling a second structural element without irradiating a first structural element. The invention avoids irradiating the first structural element by placing a first marker element, which can be imaged and/or damaged, in the same layer of a multi-layer lithographically fabricated device as the first structural element. The marker element has a fixed spatial relationship to the first structural element. Thus, by imaging the first marker element and the second structural element, and knowing the separation between the first structural element and the first marker element, a focused particle beam system can determine the relative location of the first and second structural elements. Consequently, the focused particle beam system can determine, without irradiating the sensitive first structural element, which portions of the second structural element require milling. In this manner, the focused particle beam system mills the second structural element to produce a desired pole-tip configuration. By producing a desired pole-tip configuration, these methods and apparatus produce an improved recording head capable of higher storage density than prior art techniques.
摘要:
A gradient charged particle beam apparatus capable of moving highly accurately to a specific position by eliminating influences of warp inside a wafer surface is provided. A portion 46 having a mark 47 for aligning visual field alignment positioned in advance to the same horizontal and the same height as a stage plane as a reference point is arranged on a wafer holder. A height of an observation point on a sample is adjusted to the height of the mark 47 and the visual field of a gradient column is brought into conformity with the visual field of a vertical column by use of a known offset between the gradient column and the vertical column at that time.
摘要:
A photomask repair method including scanning an electron beam across a main surface of the photomask, thereby producing a pattern image of the photomask, identifying the position of a defective portion from the pattern image thus produced, and applying an electron beam to a region to be etched including a defective portion under an atmosphere of a gas capable of performing a chemical etching of a film material forming the photomask pattern, thereby removing a defect. In this method, the electron beam to be applied to the region to be etched is a shaped beam. The electron beam is set such that the side of the electron beam is applied in parallel to a borderline between a non-defective pattern and the defect.
摘要:
An optical alignment system for use in a semiconductor processing system is provided. The optical alignment system includes a wafer chuck that has an alignment feature integrated into the top surface of the wafer chuck. In addition, a beam-forming system, which is capable of emitting an optical signal onto the alignment feature, is disposed above the wafer chuck. Also, a detector is included that can detect an amplitude of the optical signal emitted onto the alignment feature. In one aspect, the alignment feature can be a reflective alignment feature that reflects a portion of the optical signal back to the beam detector. In additional aspect, the alignment feature can be a transmittance alignment feature capable of allowing a portion of the optical signal to pass through the wafer chuck to the detector. In this aspect, the detector can be disposed below the wafer chuck.
摘要:
A focused particle beam system, according to one embodiment of the invention, precisely shapes a pole-tip assembly formed by a multi-layer device having a first layer with a first structural element, a second layer with a second structural element, and a shielding layer with a shielding element, the shielding element being located between the first layer and the second layer. The system images a selected portion of the multi-layer device to locate the shielding element and thereby avoids irradiating the first structural element. Based on the location of the shielding element, the system images and mills the second structural element without irradiating the first structural element. In this manner, the focused particle beam system mills the second structural element to produce a desired pole-Up configuration. By producing a desired pole-tip configuration, these methods and apparatus produce a recording transducer capable of high storage density.
摘要:
Charged-particle-beam (CPB) mapping projection-optical systems and adjustment methods for such systems are disclosed that can be performed quickly and accurately. In a typical system, an irradiation beam is emitted from a source, passes through an irradiation optical system, and enters a Wien filter (“E×B”). Upon passing through the E×B, the irradiation beam passes through an objective optical system and is incident on an object surface. Such impingement generates an observation beam that returns through the objective optical system and the E×B in a different direction to a detector via an imaging optical system. An adjustment-beam source emits an adjustment beam used for adjusting and aligning the position of, e.g., the object surface and/or the Wien's condition of the E×B. The adjustment beam can be off-axis relative to the objective-optical system. For such adjusting and aligning, fiducial marks (situated, e.g., in the plane of the object surface) can be used that are optimized for the CPB optical system and the off-axis optical system. Desirably, the image formed on the detector when electrical voltage and current are not applied to the E×B is in the same position as the image formed on the detector when electrical voltage and current are applied to the E×B. Also provided are “evaluation charts” for use in such alignments that do not require adjustment of the optical axis of the irradiation optical system, and from which the kinetic-energy distribution of the emitted adjustment beam is stable.