公开(公告)号：US20150376791A1

公开(公告)日：2015-12-31

申请号：US14831900

申请日：2015-08-21

申请人： International Business Machines Corporation

发明人： Oleg Gluschenkov ,  Ahmet S. Ozcan

IPC分类号： C23C16/48 ,  C23C16/52 ,  C23C16/42 ,  H01J37/305 ,  H01J37/30 ,  H01L21/67 ,  C23C16/452 ,  C23C16/458

CPC分类号： H01L21/02057 ,  C23C14/02 ,  C23C16/0236 ,  C23C16/42 ,  C23C16/452 ,  C23C16/45523 ,  C23C16/4582 ,  C23C16/486 ,  C23C16/52 ,  H01J37/30 ,  H01J37/3002 ,  H01J37/305 ,  H01J37/3053 ,  H01J37/32449 ,  H01J2237/0812 ,  H01J2237/30472 ,  H01J2237/31732 ,  H01J2237/3174 ,  H01J2237/334 ,  H01L21/02068 ,  H01L21/28506 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28575 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/67028

摘要： A method of forming a low temperature silicide film on a substrate includes supplying a source gas to a cluster formation chamber to form a gas cluster that is subsequently moved to an ionization-acceleration chamber to form a gas cluster ion beam (GCIB). The GCIB is injected into a processing chamber containing the substrate. A precursor gas is injected through an injection device located on a top portion of the processing chamber to form a silicide film on the substrate by bombarding the substrate with the GCIB in the presence of the precursor gas.

公开(公告)号：US20150325427A1

公开(公告)日：2015-11-12

申请号：US14803336

申请日：2015-07-20

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Yosuke OTA ,  Yoshiro HIROSE

IPC分类号： H01L21/02 ,  C23C16/455 ,  C23C16/30 ,  C23C16/52

CPC分类号： H01L21/02118 ,  C23C16/30 ,  C23C16/308 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/45546 ,  C23C16/45561 ,  C23C16/52 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/0223 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/0228

摘要： Provided are: forming an oxycarbonitride film, an oxycarbide film or an oxide film on a substrate by alternately performing a specific number of times: forming a first layer containing the specific element, nitrogen and carbon, on the substrate, by alternately performing a specific number of times, supplying a first source containing the specific element and a halogen-group to the substrate in a processing chamber, and supplying a second source containing the specific element and an amino-group to the substrate in the processing chamber; and forming a second layer by oxidizing the first layer by supplying an oxygen-containing gas, and an oxygen-containing gas and a hydrogen-containing gas to the substrate in the processing chamber.

摘要翻译： 提供：通过交替执行特定次数在基板上形成碳氮氧化物膜，氧化碳膜或氧化物膜：通过交替地执行特定数量在基板上形成含有特定元素的第一层氮和碳 的时间，在处理室中向基板供给包含特定元素和卤素基团的第一源，并将含有特定元素和氨基的第二源提供给处理室中的基板; 以及通过向所述处理室中的所述衬底供给含氧气体和含氧气体和含氢气体来氧化所述第一层而形成第二层。

公开(公告)号：US09145604B2

公开(公告)日：2015-09-29

申请号：US13628268

申请日：2012-09-27

申请人： TOKYO ELECTRON LIMITED

发明人： Akinobu Kakimoto ,  Atsushi Endo ,  Takahiro Miyahara ,  Shigeru Nakajima ,  Satoshi Takagi ,  Kazumasa Igarashi

IPC分类号： H01L21/336 ,  C23C16/24 ,  C30B25/02 ,  C30B29/06 ,  C23C16/02 ,  C23C16/04 ,  C23C16/455 ,  H01L21/67

CPC分类号： C23C16/24 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/45523 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02167 ,  H01L21/02271 ,  H01L21/02312 ,  H01L21/67109

摘要： A thin film forming method which forms a seed film and an impurity-containing silicon film on a surface of an object to be processed in a processing container configured to be vacuum exhaustible includes: performing a first step which forms the seed film by supplying a seed film raw material gas including at least any one of an aminosilane-based gas and a higher silane into the processing container; and performing a second step which forms the impurity-containing silicon film in an amorphous state by supplying a silane-based gas and an impurity-containing gas into the processing container.

摘要翻译： 在被配置为真空可消耗的处理容器中的待处理物体的表面上形成种子膜和含杂质的硅膜的薄膜形成方法包括：通过提供种子进行形成种子膜的第一步骤 将包含氨基硅烷类气体和高级硅烷中的至少任一种的膜原料气体加入到处理容器内; 以及通过向所述处理容器供给硅烷系气体和含杂质气体，进行非晶态的含杂质的硅膜的第二工序。

公开(公告)号：US09139908B2

公开(公告)日：2015-09-22

申请号：US14104796

申请日：2013-12-12

申请人： The Boeing Company

发明人： Alpana Ranade ,  Marvi A. Matos

IPC分类号： C23C16/50

CPC分类号： C23C16/50 ,  C23C16/453 ,  C23C16/45523

摘要： An article comprising a thickness of a first film from a surface of the article, the first film having a gradient chemical composition within at least a portion of the thickness of the first film in a vertical and/or horizontal direction relative to the surface of the article, and methods and systems for producing same.

摘要翻译： 一种从制品的表面形成第一膜的厚度的物品，所述第一膜在第一膜的至少一部分厚度的垂直和/或水平方向上相对于所述第一膜的表面具有梯度化学组成 文章，生产方法和系统。

公开(公告)号：US09139904B2

公开(公告)日：2015-09-22

申请号：US14107787

申请日：2013-12-16

申请人： TOKYO ELECTRON LIMITED

发明人： Kazuya Yamamoto ,  Yuichi Ito

IPC分类号： C23C16/455 ,  C23C16/40 ,  C23C16/52

CPC分类号： C23C16/402 ,  C23C16/40 ,  C23C16/45523 ,  C23C16/45557 ,  C23C16/52

摘要： A thin film forming method for forming a thin film on a workpiece accommodated within a reaction chamber includes a first operation of supplying a first source gas and a second source gas into the reaction chamber, and a second operation of stopping the supply of the first source gas, supplying the second source gas into the reaction chamber and setting an internal pressure of the reaction chamber higher than an internal pressure of the reaction chamber set in the first operation. The first operation and the second operation are alternately repeated a plurality of times.

摘要翻译： 在容纳在反应室内的工件上形成薄膜的薄膜形成方法包括将第一源气体和第二源气体供应到反应室中的第一操作和停止第一源的供给的第二操作 气体，将第二源气体供应到反应室中，并使反应室的内部压力高于在第一操作中设置的反应室的内部压力。 第一操作和第二操作交替重复多次。

公开(公告)号：US20150259793A1

公开(公告)日：2015-09-17

申请号：US14645258

申请日：2015-03-11

申请人： Veeco ALD Inc.

发明人： Sang In Lee ,  Samuel S. Pak ,  Daniel Ho Lee ,  Hyoseok Daniel Yang

IPC分类号： C23C16/44 ,  H01J37/32 ,  C23C16/455

CPC分类号： C23C16/4405 ,  C23C16/4412 ,  C23C16/45523 ,  C23C16/45538 ,  C23C16/45544 ,  C23C16/45551 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32834 ,  H01J37/32853 ,  H01J37/32862

摘要： Embodiments relate to a deposition device that operates in two modes: a deposition mode, and a cleaning mode. In the deposition mode, modular injectors inject materials onto a substrate to form a layer. In the cleaning mode, the deposition device is cleaned without disassembly by injecting a cleaning gas. The injector module assembly may be cleaned in the cleaning mode by injecting cleaning gas through an exhaust for removing reactant precursor and routing the cleaning gas from the exhaust to another exhaust for removing source precursor. Alternatively, the injector module assembly is cleaned by injecting cleaning gas into a passage between an injector for injecting a source precursor and another injector for injecting a reactant precursor, and routing the cleaning gas to one of the exhausts in the cleaning mode.

摘要翻译： 实施例涉及以两种模式操作的沉积装置：沉积模式和清洁模式。 在沉积模式下，模块化注射器将材料注入到基底上以形成层。 在清洁模式中，通过注入清洁气体而不拆卸清洁沉积装置。 注射器模块组件可以在清洁模式下通过用于除去反应物前体的排气注入清洁气体并将清洁气体从排气引导到用于除去源前体的另一排气来清洁。 或者，通过将清洁气体注入到用于注射源前体的注射器和用于注入反应物前体的另一个注射器之间的通道中，并且以清洁模式将清洁气体路由到排气中的一个通道来清洁喷射器模块组件。

公开(公告)号：US09127360B2

公开(公告)日：2015-09-08

申请号：US12887647

申请日：2010-09-22

申请人： Balasubramanian Ramachandran ,  Errol Antonio C. Sanchez ,  Nyi O. Myo ,  Kevin Joseph Bautista ,  Harpreet Singh Juneja ,  Zuoming Zhu

发明人： Balasubramanian Ramachandran ,  Errol Antonio C. Sanchez ,  Nyi O. Myo ,  Kevin Joseph Bautista ,  Harpreet Singh Juneja ,  Zuoming Zhu

IPC分类号： C30B25/14 ,  C23C16/455 ,  H01L21/02

CPC分类号： C23C16/455 ,  C23C16/45523 ,  C30B25/14 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262

摘要： Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber having a substrate support disposed therein to support a processing surface of a substrate at a desired position within the process chamber; a first inlet port to provide a first process gas over the processing surface of the substrate in a first direction; a second inlet port to provide a second process gas over the processing surface of the substrate in a second direction different from the first direction, wherein an azimuthal angle measured between the first direction and the second direction with respect to a central axis of the substrate support is up to about 145 degrees; and an exhaust port disposed opposite the first inlet port to exhaust the first and second process gases from the process chamber.

摘要翻译： 本文提供了用于处理衬底的方法和设备。 在一些实施例中，用于处理衬底的设备包括处理室，其具有设置在其中的衬底支撑件，以在处理室内的期望位置处支撑衬底的处理表面; 第一入口端口，用于在第一方向上在衬底的处理表面上提供第一工艺气体; 第二入口端口，用于在不同于第一方向的第二方向上在衬底的处理表面上提供第二工艺气体，其中在第一方向和第二方向之间相对于衬底支撑件的中心轴线测量的方位角 高达约145度; 以及与第一入口相对设置的排气口，以从处理室排出第一和第二处理气体。

公开(公告)号：US20150203961A1

公开(公告)日：2015-07-23

申请号：US14601685

申请日：2015-01-21

申请人： APPLIED MATERIALS, INC.

发明人： TAE HONG HA ,  Wei Lei ,  Kie Jin Park

IPC分类号： C23C16/04 ,  C23C16/56 ,  C23C28/02 ,  C23C16/16

CPC分类号： C23C16/045 ,  C23C16/0281 ,  C23C16/16 ,  C23C16/45523 ,  C23C16/56 ,  C23C28/021 ,  C23C28/023

摘要： Methods for forming a liner layer are provided herein. In some embodiments, a method of forming a liner layer on a substrate disposed in a process chamber, the substrate having an opening formed in a first surface of the substrate, the opening having a sidewall and a bottom surface, the method includes exposing the substrate to a cobalt precursor gas and to a ruthenium precursor gas to form a cobalt-ruthenium liner layer on the first surface of the substrate and on the sidewall and bottom surface of the opening.

摘要翻译： 本文提供了形成衬垫层的方法。 在一些实施例中，一种在设置在处理室中的衬底上形成衬层的方法，所述衬底具有形成在衬底的第一表面中的开口，所述开口具有侧壁和底表面，所述方法包括使衬底 涉及一种钴前体气体和一种钌前驱体气体，以在该基底的第一表面和该开口的侧壁和底表面上形成钴 - 钌内衬层。

公开(公告)号：US20150187611A1

公开(公告)日：2015-07-02

申请号：US14228465

申请日：2014-03-28

申请人： Taketoshi SATO

发明人： Taketoshi SATO

IPC分类号： H01L21/67

CPC分类号： H01L21/67017 ,  C23C16/34 ,  C23C16/405 ,  C23C16/4408 ,  C23C16/452 ,  C23C16/45523 ,  C23C16/45561 ,  C23C16/52 ,  H01L21/02274 ,  Y10T137/0318

摘要： A substrate processing system includes a plurality of processing chambers accommodating substrates, a processing gas supply system configured to supply a processing gas sequentially into the plurality of processing chambers, a reactive gas supply system configured to supply an activated reactive gas sequentially into the plurality of processing chambers, a buffer tank installed at the processing gas supply system, and a control unit configured to control the processing gas supply system and the reactive gas supply system such that a time period of supplying the reactive gas into one of the plurality of processing chambers is equal to a sum of a time period of supplying the processing gas into the one of the plurality of processing chambers and a time period of supplying the processing gas into the buffer tank, and the processing gas and the reactive gas are alternately supplied into the plurality of processing chambers.

摘要翻译： 一种基板处理系统，包括：多个处理室容纳基板;处理气体供给系统，被配置为将处理气体顺序地供应到所述多个处理室中;反应气体供应系统，被配置为将激活的反应气体顺序地供应到所述多个处理 设置在处理气体供给系统中的缓冲罐，以及控制单元，其被配置为控制处理气体供应系统和反应气体供应系统，使得将反应气体供应到多个处理室之一中的时间段是 等于将处理气体供应到多个处理室中的一个的时间段的总和和将处理气体供应到缓冲罐中的时间段，并且处理气体和反应气体被交替地供给到多个处理室中 的处理室。

公开(公告)号：US20150184294A1

公开(公告)日：2015-07-02

申请号：US14658295

申请日：2015-03-16

申请人： Tokyo Electron Limited

发明人： Hitoshi KATO ,  Kohichi ORITO ,  Hiroyuki KIKUCHI ,  Muneyuki OTANI ,  Takeshi KUMAGAI ,  Kensaku NARUSHIMA ,  Takashi NISHIMORI

IPC分类号： C23C16/458 ,  C23C16/50 ,  C23C16/34 ,  C23C16/44 ,  C23C16/52 ,  C23C16/455

CPC分类号： C23C16/4584 ,  C23C16/34 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45523 ,  C23C16/45591 ,  C23C16/4585 ,  C23C16/50 ,  C23C16/52 ,  H01L21/28556 ,  H01L21/76843

摘要： A film deposition apparatus rotates a turntable and each gas nozzle relatively to each other at a rotational speed of 100 rpm or higher when depositing a titanium nitride film, to speed up a reaction gas supply cycle or a film deposition cycle of a reaction product. A next film of the reaction product is deposited before the grain size of the reaction product already generated on a substrate surface begins to grow due to crystallization of the already generated reaction product.

摘要翻译： 当沉积氮化钛膜时，成膜装置以100rpm或更高的旋转速度使转台和每个气体喷嘴彼此相对旋转，以加速反应气体供应循环或反应产物的成膜循环。 在已经产生的反应产物的晶粒尺寸由于已经产生的反应产物的结晶开始生长之后，沉积下一个反应产物的膜。