发明申请
US20150187611A1 SUBSTRATE PROCESSING SYSTEM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM
审中-公开
基板处理系统，制造半导体器件的方法和非可编程计算机可读记录介质
- 专利标题： SUBSTRATE PROCESSING SYSTEM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM
- 专利标题（中）： 基板处理系统，制造半导体器件的方法和非可编程计算机可读记录介质
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申请号： US14228465申请日： 2014-03-28
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公开(公告)号： US20150187611A1公开(公告)日： 2015-07-02
- 发明人: Taketoshi SATO
- 申请人： Taketoshi SATO
- 申请人地址： JP Tokyo
- 专利权人： HITACHI KOKUSAI ELECTRIC INC.
- 当前专利权人： HITACHI KOKUSAI ELECTRIC INC.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2013-271924 20131227; JP2014-040430 20140303
- 主分类号： H01L21/67
- IPC分类号： H01L21/67
摘要：
A substrate processing system includes a plurality of processing chambers accommodating substrates, a processing gas supply system configured to supply a processing gas sequentially into the plurality of processing chambers, a reactive gas supply system configured to supply an activated reactive gas sequentially into the plurality of processing chambers, a buffer tank installed at the processing gas supply system, and a control unit configured to control the processing gas supply system and the reactive gas supply system such that a time period of supplying the reactive gas into one of the plurality of processing chambers is equal to a sum of a time period of supplying the processing gas into the one of the plurality of processing chambers and a time period of supplying the processing gas into the buffer tank, and the processing gas and the reactive gas are alternately supplied into the plurality of processing chambers.
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