公开(公告)号：US07226514B2

公开(公告)日：2007-06-05

申请号：US10309832

申请日：2002-12-04

Applicant: Anwar Husain ,  Brian J. Brown ,  David G. Andeen ,  Svetlana Sherman ,  John M. White ,  Michael Sugarman ,  Makoto Inagawa ,  Manoocher Birang

Inventor： Anwar Husain ,  Brian J. Brown ,  David G. Andeen ,  Svetlana Sherman ,  John M. White ,  Michael Sugarman ,  Makoto Inagawa ,  Manoocher Birang

IPC: B08B3/02

CPC classification number: H01L21/67028 ,  Y10S134/902

Abstract: An inventive vertical spin-dryer is provided. The inventive spin-dryer may have a shield system positioned to receive fluid displaced from a substrate vertically positioned within the spin-dryer. The shield system may have one or more shields positioned to at least partially reflect fluid therefrom as the fluid impacts the shield. The one or more shields are angled to encourage the flow of fluid therealong, and are preferably hydrophilic to prevent droplets from forming. Preferably the shield system has three shields positioned in a horizontally and vertically staggered manner so that fluid is transferred from a substrate facing surface of a first shield to the top or non-substrate-facing surface of an adjacent shield, etc. A pressure gradient may be applied across the interior of the spin-dryer to create an air flow which encourages fluid to travel along the shield system in a desired direction. A sensor adapted to facilitate desired flywheel position, an openable gripper having a remote actuator, a radiused gripper and a source of inert drying gas are also provided in individual embodiments.

Abstract translation: 提供了一种创造性的垂直旋转干燥器。 本发明的旋转干燥器可以具有屏蔽系统，其被定位成接收从垂直定位在旋转干燥器内的衬底移位的流体。 屏蔽系统可以具有一个或多个屏蔽件，其定位成当流体冲击屏蔽时至少部分地反射流体。 一个或多个屏蔽件成角度以促使其流体流动，并且优选是亲水的以防止液滴形成。 优选地，屏蔽系统具有以水平和垂直交错方式定位的三个屏蔽件，使得流体从第一屏蔽件的面向基板的表面转移到相邻屏蔽件的顶部或非基板面向表面等。压力梯度可以 施加在旋转干燥器的内部以产生鼓风流体沿着屏蔽系统沿所需方向行进的空气流。 在各个实施例中还提供了适于促进期望的飞轮位置的传感器，具有远程致动器的可打开夹具，圆角夹持器和惰性干燥气体源。

公开(公告)号：US20070021037A1

公开(公告)日：2007-01-25

申请号：US11532498

申请日：2006-09-15

Applicant: Manoocher Birang ,  Allan Gleason ,  William Guthrie

Inventor： Manoocher Birang ,  Allan Gleason ,  William Guthrie

IPC: B24B49/00

CPC classification number: B24B37/205 ,  B24B37/013 ,  B24B47/12 ,  B24B49/04 ,  B24B49/12 ,  B24B51/00 ,  B24D18/00 ,  G01B11/06 ,  G01B11/0683

Abstract: The polishing pad for a chemical mechanical polishing apparatus, and a method of making the same. The polishing pad has a covering layer with a polishing surface and a backing layer which is adjacent to the platen. A first opening in the covering layer with a first cross-sectional area and a second opening in the backing layer with a second, different cross-sectional area form an aperture through the polishing pad. A substantially transparent polyurethane plug is positioned in the aperture, and an adhesive material fixes the plug in the aperture.

Abstract translation: 用于化学机械抛光装置的抛光垫及其制造方法。 抛光垫具有与抛光表面相邻的覆盖层和与压板相邻的背衬层。 具有第一横截面积的覆盖层中的第一开口和具有第二不同横截面积的背衬层中的第二开口形成穿过抛光垫的孔。 基本上透明的聚氨酯塞被定位在孔中，并且粘合剂材料将塞子固定在孔中。

公开(公告)号：US20060286904A1

公开(公告)日：2006-12-21

申请号：US11467116

申请日：2006-08-24

Applicant: Boguslaw Swedek ,  Bret Adams ,  Sanjay Rajaram ,  David Chan ,  Manoocher Birang

Inventor： Boguslaw Swedek ,  Bret Adams ,  Sanjay Rajaram ,  David Chan ,  Manoocher Birang

IPC: B24B51/00

CPC classification number: B24B37/013 ,  B24B37/042 ,  B24B49/12 ,  B24B51/00 ,  H01L22/26

Abstract: A computer-implemented method for process control in chemical mechanical polishing in which an initial pre-polishing thickness of a substrate is measured at a metrology station, a parameter of an endpoint algorithm is determined from the initial thickness of the substrate, a substrates is polished at a polishing station, and polishing stops when an endpoint criterion is detected using the endpoint algorithm.

Abstract translation: 一种用于化学机械抛光中的过程控制的计算机实现方法，其中在计量站测量衬底的初始预抛光厚度，从衬底的初始厚度确定端点算法的参数，抛光衬底 在抛光台处，当使用端点算法检测到端点标准时抛光停止。

公开(公告)号：US20060148261A1

公开(公告)日：2006-07-06

申请号：US11370493

申请日：2006-03-06

Applicant: Manoocher Birang ,  Konstantin Smekalin ,  David Chan

Inventor： Manoocher Birang ,  Konstantin Smekalin ,  David Chan

IPC: H01L21/461

CPC classification number: B24B37/013 ,  B24B37/042 ,  B24B49/003 ,  B24B49/12

Abstract: A CMP station can be closed loop controlled by using data obtained by an inline metrology station from a first polished wafer to affect the processing of subsequent polished wafers. The first wafer is polished and measured by the inline metrology station. The metrology station measures at various points the array dielectric thickness, field dielectric thickness, barrier residue thickness and metal residue thickness. The data is then inputted into an algorithm and polishing parameter outputs are calculated. The outputs are sent to the CMP station and used to supplement or replace the previous polishing parameters. Subsequent wafers are polished on the CMP station using the revised polishing parameters.

公开(公告)号：US20050287929A1

公开(公告)日：2005-12-29

申请号：US11217598

申请日：2005-08-31

Applicant: Boguslaw Swedek ,  Manoocher Birang ,  Nils Johansson

Inventor： Boguslaw Swedek ,  Manoocher Birang ,  Nils Johansson

IPC: B24B37/005 ,  B24B37/04 ,  B24B49/02 ,  B24B49/10 ,  B24B49/12 ,  G01B11/06 ,  H01L21/304 ,  B24B49/00

CPC classification number: B24B37/013 ,  B24B49/02 ,  B24B49/10 ,  B24B49/12 ,  G01B7/105 ,  G01B11/0683

Abstract: A chemical mechanical polishing apparatus and method can use an eddy current monitoring system and an optical monitoring system. Signals from the monitoring systems can be combined on an output line and extracted by a computer. A thickness of a polishing pad can be calculated. The eddy current monitoring system and optical monitoring system can measure substantially the same location on the substrate.

Abstract translation: 化学机械抛光装置和方法可以使用涡流监测系统和光学监测系统。 来自监控系统的信号可以组合在输出线上并由计算机提取。 可以计算抛光垫的厚度。 涡流监测系统和光学监测系统可以测量基板上基本相同的位置。

公开(公告)号：US20050101224A1

公开(公告)日：2005-05-12

申请号：US11016410

申请日：2004-12-17

Applicant: Nils Johansson ,  Boguslaw Swedek ,  Manoocher Birang

Inventor： Nils Johansson ,  Boguslaw Swedek ,  Manoocher Birang

IPC: B24B1/00 ,  B24B37/013 ,  B24B49/02 ,  B24B49/04 ,  B24B49/10 ,  B24B49/12 ,  B24B49/00

CPC classification number: B24B37/013 ,  B24B49/02 ,  B24B49/04 ,  B24B49/10 ,  B24B49/12 ,  G01B7/105

Abstract: A chemical mechanical polishing apparatus has a polishing pad, a carrier to hold a substrate against a first side of the polishing surface, and a motor coupled to at least one of the polishing pad and carrier head for generating relative motion therebetween. An eddy current monitoring system is positioned to generate an alternating magnetic field in proximity to the substrate, an optical monitoring system generates a light beam and detects reflections of the light beam from the substrate, and a controller receives signals from the eddy current monitoring system and the optical monitoring system.

公开(公告)号：US06841057B2

公开(公告)日：2005-01-11

申请号：US10098796

申请日：2002-03-13

Applicant: Ralph Wadensweiler ,  Alain Duboust ,  Liang-Yuh Chen ,  Manoocher Birang ,  Ratson Morad ,  Paul D. Butterfield

Inventor： Ralph Wadensweiler ,  Alain Duboust ,  Liang-Yuh Chen ,  Manoocher Birang ,  Ratson Morad ,  Paul D. Butterfield

IPC: B23H5/08 ,  C25F7/00 ,  C25F3/00 ,  C25C7/04 ,  C25D17/00

CPC classification number: B23H5/08 ,  C25F7/00

Abstract: A method and apparatus are provided for polishing a substrate surface. In one aspect, an apparatus for polishing a substrate includes a conductive polishing pad and an electrode having a membrane disposed therebetween. The membrane is orientated relative the conductive pad in a manner that facilitates removal of entrained gas from electrolyte flowing towards the conductive pad. The apparatus may be part of an electro-chemical polishing station that may optionally be part of a system that includes chemical mechanical polishing stations.

Abstract translation: 提供了一种用于抛光衬底表面的方法和装置。 一方面，用于抛光衬底的装置包括导电抛光垫和在其间设置有膜的电极。 膜以相对于导电垫的方向定向，以便于从电解液中流出的夹带气体去除导电垫。 该设备可以是电化学抛光站的一部分，其可以可选地是包括化学机械抛光站的系统的一部分。

公开(公告)号：US06832948B1

公开(公告)日：2004-12-21

申请号：US09454354

申请日：1999-12-03

Applicant: Manoocher Birang ,  Ramin Emami ,  Shijian Li ,  Fred C. Redeker

Inventor： Manoocher Birang ,  Ramin Emami ,  Shijian Li ,  Fred C. Redeker

IPC: B24B100

CPC classification number: B24B53/017 ,  B24B37/042 ,  B24B37/245

Abstract: The CMP removal rate of a fixed abrasive article is increased and wafer-to-wafer uniformity enhanced by thermal preconditioning. Embodiments include preconditioning a fixed abrasive article by heating with hot water to a temperature of about 90° C. to about 100° C. to increase and stabilize the Cu or Cu alloy CMP removal rate.

Abstract translation: 固定磨料制品的CMP去除率增加，并且通过热预处理提高了晶片到晶片的均匀性。 实施例包括通过用热水加热至约90℃至约100℃的温度来预固定固定的磨料制品，以增加和稳定Cu或Cu合金CMP去除速率。

公开(公告)号：US06676717B1

公开(公告)日：2004-01-13

申请号：US09672532

申请日：2000-09-28

Applicant: Manoocher Birang ,  Allan Gleason

Inventor： Manoocher Birang ,  Allan Gleason

IPC: B24B100

CPC classification number: B24B37/205 ,  B24B37/013 ,  B24B47/12 ,  B24B49/04 ,  B24B49/12 ,  B24B51/00 ,  G01B11/0683 ,  Y10T428/15 ,  Y10T428/162 ,  Y10T428/163 ,  Y10T428/17 ,  Y10T428/218 ,  Y10T428/234 ,  Y10T428/24273 ,  Y10T428/24281 ,  Y10T428/24289 ,  Y10T428/24322 ,  Y10T428/24364 ,  Y10T428/24479 ,  Y10T428/249978 ,  Y10T428/31

Abstract: An apparatus and method of chemical mechanical polishing (CMP) of a wafer employing a device for determining, in-situ, during the CMP process, an endpoint where the process is to be terminated. This device includes a laser interferometer capable of generating a laser beam directed towards the wafer and detecting light reflected from the wafer, and a window disposed adjacent to a hole formed through a platen. The window provides a pathway for the laser beam during at least part of the time the wafer overlies the window.

公开(公告)号：US06659849B1

公开(公告)日：2003-12-09

申请号：US09705965

申请日：2000-11-03

Applicant: Shijian Li ,  Jayakumar Gurusamy ,  Manoocher Birang ,  Fred C. Redeker

Inventor： Shijian Li ,  Jayakumar Gurusamy ,  Manoocher Birang ,  Fred C. Redeker

IPC: B24B100

CPC classification number: B24B37/12 ,  B08B1/02 ,  B08B5/026 ,  B08B5/046 ,  B08B6/00 ,  B08B7/0028 ,  B24B21/10 ,  B24B21/14 ,  B24B53/017 ,  B24B53/10 ,  B24B57/02

Abstract: Generally, a method and apparatus for cleaning a backside of a web of polishing material. In one embodiment, the apparatus includes a platen having a support surface adapted to support the backside the web and a web cleaner disposed on the platen and adjacent the backside of the web. A method for cleaning a web of polishing material is also provided. In one embodiment, the method includes the steps of supporting a portion of the web of polishing media on a platen, advancing a portion of the web onto the platen, and cleaning the unrolled portion of the web.

Abstract translation: 通常，用于清洁抛光材料的网的背面的方法和设备。 在一个实施例中，该设备包括具有支撑表面的压板，该支撑表面适于支撑该纸幅的背面，以及布置在该压板上并且邻近该纸幅背面的纸幅清洁剂。 还提供了一种用于清洁抛光材料的网的方法。 在一个实施例中，该方法包括以下步骤：将平板上的抛光介质的一部分支撑在压板上，将幅材的一部分推进到压板上，以及清洁纸幅的展开部分。