公开(公告)号：US20060148261A1

公开(公告)日：2006-07-06

申请号：US11370493

申请日：2006-03-06

Applicant: Manoocher Birang ,  Konstantin Smekalin ,  David Chan

Inventor： Manoocher Birang ,  Konstantin Smekalin ,  David Chan

IPC: H01L21/461

CPC classification number: B24B37/013 ,  B24B37/042 ,  B24B49/003 ,  B24B49/12

Abstract: A CMP station can be closed loop controlled by using data obtained by an inline metrology station from a first polished wafer to affect the processing of subsequent polished wafers. The first wafer is polished and measured by the inline metrology station. The metrology station measures at various points the array dielectric thickness, field dielectric thickness, barrier residue thickness and metal residue thickness. The data is then inputted into an algorithm and polishing parameter outputs are calculated. The outputs are sent to the CMP station and used to supplement or replace the previous polishing parameters. Subsequent wafers are polished on the CMP station using the revised polishing parameters.

公开(公告)号：US20070181149A1

公开(公告)日：2007-08-09

申请号：US11689283

申请日：2007-03-21

Applicant: Alexander Ko ,  Glen Egami ,  Billy Suber ,  Konstantin Smekalin

Inventor： Alexander Ko ,  Glen Egami ,  Billy Suber ,  Konstantin Smekalin

IPC: C23G1/00 ,  B08B7/00 ,  B08B3/00

CPC classification number: H01L21/67051 ,  B08B3/02 ,  B08B3/12 ,  B08B2203/0288 ,  H01L21/02041 ,  Y10S134/902

Abstract: A method and apparatus for cleaning a backside of a substrate is disclosed. The method includes placing the substrate parallel to a platter, wherein the backside of the substrate is facing a top side of the platter in a spaced apart relation, thus defining a gap therebetween. Subsequently, a liquid is flowed through the platter and into continuous contact with the entire backside of the substrate and the top side of the platter.

Abstract translation: 公开了一种用于清洁衬底背面的方法和装置。 该方法包括将基板平行于盘片放置，其中基板的背面以间隔开的关系面对盘片的顶侧，从而在其间形成间隙。 随后，液体流过盘片并与基片的整个背面和拼盘的顶侧持续接触。

公开(公告)号：US20080163891A1

公开(公告)日：2008-07-10

申请号：US11621855

申请日：2007-01-10

Applicant: JIANSHE TANG ,  Wei Lu ,  Bo Xie ,  Elias Martinez ,  Zhiyong Li ,  Kent Child ,  Richard Endo ,  Konstantin Smekalin

Inventor： JIANSHE TANG ,  Wei Lu ,  Bo Xie ,  Elias Martinez ,  Zhiyong Li ,  Kent Child ,  Richard Endo ,  Konstantin Smekalin

IPC: B08B3/00

CPC classification number: H01L21/02065 ,  H01L21/02057 ,  H01L21/67051

Abstract: An apparatus for cleaning a wafer has a first chamber and a component coupled to the first chamber. The first chamber has a first input to form de-ionized water droplets. The component is coupled to the first chamber to further atomize and apply the atomized de-ionized water droplets on the wafer.

Abstract translation: 用于清洁晶片的装置具有第一室和耦合到第一室的部件。 第一室具有形成去离子水滴的第一输入。 该组件耦合到第一室以进一步雾化并将雾化的去离子水滴施加在晶片上。

公开(公告)号：US20070123046A1

公开(公告)日：2007-05-31

申请号：US11590655

申请日：2006-10-30

Applicant: Abraham Ravid ,  Doyle Bennett ,  Konstantin Smekalin

Inventor： Abraham Ravid ,  Doyle Bennett ,  Konstantin Smekalin

IPC: H01L21/66 ,  H01L21/76 ,  H01L21/461

CPC classification number: B24B37/042 ,  B24B49/03 ,  H01L21/76224 ,  H01L21/7684

Abstract: A CMP tool can be closed loop controlled by using data, for a first polished wafer, obtained by an in-line metrology station, an in-situ monitoring system, and/or an inter-platen monitoring system to continually monitor and qualify polishing rates for the processing of subsequent polished wafers.

Abstract translation: CMP工具可以通过使用数据进行闭环控制，对于第一抛光晶片，通过在线计量站，原位监测系统和/或板间监控系统获得，以连续监测和限定抛光速率 用于处理随后抛光的晶片。