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    Methods and apparatus for polishing control
    1.
    发明申请
    Methods and apparatus for polishing control 有权

    公开(公告)号：US20060148261A1

    公开(公告)日：2006-07-06

    申请号：US11370493

    申请日：2006-03-06

    Applicant: Manoocher Birang ,  Konstantin Smekalin ,  David Chan

    Inventor： Manoocher Birang ,  Konstantin Smekalin ,  David Chan

    IPC: H01L21/461

    CPC classification number: B24B37/013 ,  B24B37/042 ,  B24B49/003 ,  B24B49/12

    Abstract: A CMP station can be closed loop controlled by using data obtained by an inline metrology station from a first polished wafer to affect the processing of subsequent polished wafers. The first wafer is polished and measured by the inline metrology station. The metrology station measures at various points the array dielectric thickness, field dielectric thickness, barrier residue thickness and metal residue thickness. The data is then inputted into an algorithm and polishing parameter outputs are calculated. The outputs are sent to the CMP station and used to supplement or replace the previous polishing parameters. Subsequent wafers are polished on the CMP station using the revised polishing parameters.

    Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations
    5.
    发明授权
    Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations 有权
    用于化学机械抛光操作的原位终点检测的装置和方法

    公开(公告)号：US07775852B2

    公开(公告)日：2010-08-17

    申请号：US11099789

    申请日：2005-04-05

    Applicant: Manoocher Birang ,  Nils Johansson ,  Allan Gleason

    Inventor： Manoocher Birang ,  Nils Johansson ,  Allan Gleason

    IPC: B24B49/12

    CPC classification number: H01L22/12 ,  B24B37/013 ,  B24B37/205 ,  B24B47/12 ,  B24B49/04 ,  B24B49/12 ,  B24B51/00 ,  G01B11/0683

    Abstract: An apparatus and method of chemical mechanical polishing (CMP) of a wafer employing a device for determining, in-situ, during the CMP process, an endpoint where the process is to be terminated. This device includes a laser interferometer capable of generating a laser beam directed towards the wafer and detecting light reflected from the wafer, and a window disposed adjacent to a hole formed through a platen. The window provides a pathway for the laser beam during at least part of the time the wafer overlies the window.

    Abstract translation: 使用用于在CMP处理期间原地确定终止该过程的端点的装置的晶片的化学机械抛光（CMP）的装置和方法。 该装置包括能够产生朝向晶片的激光束并检测从晶片反射的光的激光干涉仪，以及邻近通过压板形成的孔布置的窗口。 该窗口在晶片覆盖窗口的至少部分时间内为激光束提供通路。

    Substrate polishing metrology using interference signals
    6.
    发明授权
    Substrate polishing metrology using interference signals 失效
    使用干涉信号的基板抛光计量

    公开(公告)号：US07731566B2

    公开(公告)日：2010-06-08

    申请号：US11838808

    申请日：2007-08-14

    Applicant: Manoocher Birang ,  Grigory Pyatigorsky

    Inventor： Manoocher Birang ,  Grigory Pyatigorsky

    IPC: B24B49/00

    CPC classification number: B24B37/205 ,  B24B37/013 ,  B24B47/12 ,  B24B49/04 ,  B24B49/12 ,  B24B51/00 ,  G01B11/06 ,  G01B11/0683

    Abstract: A method of polishing a substrate includes holding the substrate on a polishing pad with a polishing head, wherein the polishing pad is supported by a platen, creating relative motion between the substrate and the polishing pad to polish a side of the substrate, generating a light beam and directing the light beam towards the substrate to cause the light beam to impinge on the side of the substrate being polished. Light reflected from the substrate is at a detector to generate an interference signal. A measure of uniformity is computed from the interference signal.

    Abstract translation: 抛光衬底的方法包括：将抛光垫保持在具有抛光头的抛光垫上，其中抛光垫由压板支撑，在衬底和抛光垫之间产生相对运动以抛光衬底的侧面，产生光 光束并将光束引向基板，以使光束撞击正在抛光的基板的侧面。 从基板反射的光在检测器处产生干涉信号。 从干扰信号计算均匀度的度量。

    CARBON NANOTUBE-BASED LOAD CELLS
    8.
    发明申请
    CARBON NANOTUBE-BASED LOAD CELLS 有权
    基于碳纳米管的负载细胞

    公开(公告)号：US20100050779A1

    公开(公告)日：2010-03-04

    申请号：US12201242

    申请日：2008-08-29

    Applicant: Victor L. Pushparaj ,  Omkaram Nalamasu ,  Manoocher Birang

    Inventor： Victor L. Pushparaj ,  Omkaram Nalamasu ,  Manoocher Birang

    IPC: G01B7/16 ,  H01L49/00 ,  H01L21/66

    CPC classification number: G01L1/20 ,  G01L1/18 ,  G01L5/0076 ,  Y10S977/953 ,  Y10S977/956

    Abstract: A robust, stand-alone load cell comprises a block of aligned carbon nanotubes with parallel electrodes on opposing sides of the block and an electrical circuit connected between the electrodes for measuring the electrical resistance of the block. The nanotubes are preferably aligned perpendicular to the electrodes. Carbon nanotube-based load cells may be incorporated into a wafer asssembly for characterizing semiconductor processing equipment. Such a wafer assembly includes two parallel wafers with a plurality of carbon nanotube load cells positioned between and attached to both wafers. The load cells are independently electrically connected to a device which monitors and records the resistivity of the load cell. According to further aspects of the invention, each of the load cell's parallel electrodes may be comprised of many small electrodes, where each small electrode on one side of the block has a corresponding small electrode on the opposing side of the block; corresponding pairs of small electrodes are connected in series to form a chain; an electrical circuit, connected to both ends of the chain of opposing pairs of electrodes, is used to measure the electrical resistance of the chain.

    Abstract translation: 坚固的独立测力传感器包括在块的相对侧上具有平行电极的对准碳纳米管块和连接在电极之间的用于测量块的电阻的电路。 纳米管优选垂直于电极取向。 可以将碳纳米管基称重传感器结合到用于表征半导体处理设备的晶片组件中。 这种晶片组件包括两个平行的晶片，其中多个碳纳米管负载单元位于两个晶片之间并附着在两个晶片上。 称重传感器独立地电连接到监测和记录称重传感器的电阻率的装置。 根据本发明的另外的方面，每个负载传感器的平行电极可以由许多小电极组成，其中块的一侧上的每个小电极在块的相对侧具有相应的小电极; 相应的一对小电极串联连接形成链条; 连接到相对电极对的链的两端的电路用于测量链的电阻。

    Data processing for monitoring chemical mechanical polishing
    9.
    发明授权
    Data processing for monitoring chemical mechanical polishing 有权
    数据处理用于监测化学机械抛光

    公开(公告)号：US07500901B2

    公开(公告)日：2009-03-10

    申请号：US11222561

    申请日：2005-09-08

    Applicant: Boguslaw A. Swedek ,  Nils Johansson ,  Manoocher Birang

    Inventor： Boguslaw A. Swedek ,  Nils Johansson ,  Manoocher Birang

    IPC: B24B49/00 ,  B24B51/00

    CPC classification number: B24B37/013 ,  B24B49/10

    Abstract: Methods and apparatus to implement techniques for monitoring polishing a substrate. Two or more data points are acquired, where each data point has a value affected by features inside a sensing region of a sensor and corresponds to a relative position of the substrate and the sensor as the sensing region traverses through the substrate. A set of reference points is used to modify the acquired data points. The modification compensates for distortions in the acquired data points caused by the sensing region traversing through the substrate. Based on the modified data points, a local property of the substrate is evaluated to monitor polishing.

    Abstract translation: 实施用于监测抛光衬底的技术的方法和装置。 获取两个或多个数据点，其中每个数据点具有受传感器感测区域内的特征影响的值，并且对应于感测区域穿过衬底的衬底和传感器的相对位置。 一组参考点用于修改采集的数据点。 该修改补偿由穿过衬底的感测区域引起的所获取的数据点中的失真。 基于修改的数据点，评估基板的局部特性以监测抛光。

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