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    Data processing for monitoring chemical mechanical polishing
    3.
    发明申请
    Data processing for monitoring chemical mechanical polishing 有权

    公开(公告)号：US20060009131A1

    公开(公告)日：2006-01-12

    申请号：US11222561

    申请日：2005-09-08

    Applicant: Boguslaw Swedek ,  Nils Johansson ,  Manoocher Birang

    Inventor： Boguslaw Swedek ,  Nils Johansson ,  Manoocher Birang

    IPC: B24B49/00

    CPC classification number: B24B37/013 ,  B24B49/10

    Abstract: Methods and apparatus to implement techniques for monitoring polishing a substrate. Two or more data points are acquired, where each data point has a value affected by features inside a sensing region of a sensor and corresponds to a relative position of the substrate and the sensor as the sensing region traverses through the substrate. A set of reference points is used to modify the acquired data points. The modification compensates for distortions in the acquired data points caused by the sensing region traversing through the substrate. Based on the modified data points, a local property of the substrate is evaluated to monitor polishing.

    System and method for in-line metal profile measurement
    4.
    发明申请
    System and method for in-line metal profile measurement 有权
    在线金属型材测量的系统和方法

    公开(公告)号：US20050048874A1

    公开(公告)日：2005-03-03

    申请号：US10966948

    申请日：2004-10-15

    Applicant: Boguslaw Swedek ,  Nils Johansson ,  Andreas Wiswesser ,  Manoocher Birang

    Inventor： Boguslaw Swedek ,  Nils Johansson ,  Andreas Wiswesser ,  Manoocher Birang

    IPC: B24B37/005 ,  B24B37/34 ,  B24B49/10 ,  B24B49/00

    CPC classification number: B24B37/345 ,  B24B37/005 ,  B24B49/105 ,  G01B7/105 ,  H01L21/67219 ,  H01L22/12

    Abstract: A system includes a measuring station for positioning an eddy current probe proximate to a substrate in a substrate holder. The probe can produce a time-varying magnetic field, in order to induce eddy currents in one or more conductive regions of a substrate either prior to or subsequent to polishing. The eddy current signals are detected, and may be used to update one or more polishing parameters for a chemical mechanical polishing system. The substrate holder may be located in a number places; for example, in a substrate transfer system, a factory interface module, a cleaner, or in a portion of the chemical mechanical polishing system away from the polishing stations. Additional probes may be used.

    Abstract translation: 一种系统包括用于将涡流探针靠近衬底保持器中的衬底定位的测量站。 探针可以产生时变磁场，以便在抛光之前或之后在衬底的一个或多个导电区域中引起涡流。 检测涡流信号，并可用于更新化学机械抛光系统的一个或多个抛光参数。 衬底保持器可以位于多个位置; 例如，在基板传送系统，工厂接口模块，清洁器或化学机械抛光系统的远离抛光站的一部分中。 可以使用附加的探针。

    System and method for in-line metal profile measurement
    6.
    发明申请
    System and method for in-line metal profile measurement 审中-公开
    在线金属型材测量的系统和方法

    公开(公告)号：US20060246822A1

    公开(公告)日：2006-11-02

    申请号：US11479299

    申请日：2006-06-29

    Applicant: Boguslaw Swedek ,  Nils Johansson ,  Andreas Wiswesser ,  Manoocher Birang

    Inventor： Boguslaw Swedek ,  Nils Johansson ,  Andreas Wiswesser ,  Manoocher Birang

    IPC: B24B51/00 ,  B24B7/30 ,  B24B29/00

    CPC classification number: B24B37/345 ,  B24B37/005 ,  B24B49/105 ,  G01B7/105 ,  H01L21/67219 ,  H01L22/12

    Abstract: A system includes a measuring station for positioning an eddy current probe proximate to a substrate in a substrate holder. The probe can produce a time-varying magnetic field, in order to induce eddy currents in one or more conductive regions of a substrate either prior to or subsequent to polishing. The eddy current signals are detected, and may be used to update one or more polishing parameters for a chemical mechanical polishing system. The substrate holder may be located in a number places; for example, in a substrate transfer system, a factory interface module, a cleaner, or in a portion of the chemical mechanical polishing system away from the polishing stations. Additional probes may be used.

    Abstract translation: 一种系统包括用于将涡流探针靠近衬底保持器中的衬底定位的测量站。 探针可以产生时变磁场，以便在抛光之前或之后在衬底的一个或多个导电区域中引起涡流。 检测涡流信号，并可用于更新化学机械抛光系统的一个或多个抛光参数。 衬底保持器可以位于多个位置; 例如，在基板传送系统，工厂接口模块，清洁器或化学机械抛光系统的远离抛光站的一部分中。 可以使用附加的探针。

    MONITORING A METAL LAYER DURING CHEMICAL MECHANICAL POLISHING
    8.
    发明申请
    MONITORING A METAL LAYER DURING CHEMICAL MECHANICAL POLISHING 审中-公开
    在化学机械抛光期间监测金属层

    公开(公告)号：US20070212987A1

    公开(公告)日：2007-09-13

    申请号：US11749843

    申请日：2007-05-17

    Applicant: Hiroji Hanawa ,  Nils Johansson ,  Boguslaw Swedek ,  Manoocher Birang

    Inventor： Hiroji Hanawa ,  Nils Johansson ,  Boguslaw Swedek ,  Manoocher Birang

    IPC: B24B17/10

    CPC classification number: B24B37/013 ,  B24B37/205 ,  B24B49/02 ,  B24B49/105 ,  B24B49/12 ,  G01B7/105

    Abstract: A sensor for monitoring a conductive film in a substrate during chemical mechanical polishing generates an alternating magnetic field that impinges a substrate and induces eddy currents. The sensor can have a core, a first coil wound around a first portion of the core and a second coil wound around a second portion of the core. The sensor can be positioned on a side of the polishing surface opposite the substrate. The sensor can detect a phase difference between a drive signal and a measured signal.

    Abstract translation: 用于在化学机械抛光期间监测衬底中的导电膜的传感器产生撞击衬底并引起涡流的交变磁场。 传感器可以具有芯，围绕芯的第一部分缠绕的第一线圈和缠绕在芯的第二部分上的第二线圈。 传感器可以位于与衬底相对的抛光表面的一侧。 传感器可以检测到驱动信号和测量信号之间的相位差。

    Monitoring a metal layer during chemical mechanical polishing
    9.
    发明授权
    Monitoring a metal layer during chemical mechanical polishing 有权
    在化学机械抛光期间监测金属层

    公开(公告)号：US07229340B2

    公开(公告)日：2007-06-12

    申请号：US11355418

    申请日：2006-02-15

    Applicant: Hiroji Hanawa ,  Nils Johansson ,  Boguslaw Swedek ,  Manoocher Birang

    Inventor： Hiroji Hanawa ,  Nils Johansson ,  Boguslaw Swedek ,  Manoocher Birang

    IPC: B24B49/00 ,  B24B1/00

    CPC classification number: B24B37/013 ,  B24B37/205 ,  B24B49/02 ,  B24B49/105 ,  B24B49/12 ,  G01B7/105

    Abstract: A sensor for monitoring a conductive film in a substrate during chemical mechanical polishing generates an alternating magnetic field that impinges a substrate and induces eddy currents. The sensor can have a core, a first coil wound around a first portion of the core and a second coil wound around a second portion of the core. The sensor can be positioned on a side of the polishing surface opposite the substrate. The sensor can detect a phase difference between a drive signal and a measured signal.

    Abstract translation: 用于在化学机械抛光期间监测衬底中的导电膜的传感器产生撞击衬底并引起涡流的交变磁场。 传感器可以具有芯，围绕芯的第一部分缠绕的第一线圈和缠绕在芯的第二部分上的第二线圈。 传感器可以位于与衬底相对的抛光表面的一侧。 传感器可以检测到驱动信号和测量信号之间的相位差。

    Monitoring a metal layer during chemical mechanical polishing
    10.
    发明申请
    Monitoring a metal layer during chemical mechanical polishing 有权
    在化学机械抛光期间监测金属层

    公开(公告)号：US20060154570A1

    公开(公告)日：2006-07-13

    申请号：US11355418

    申请日：2006-02-15

    Applicant: Hiroji Hanawa ,  Nils Johansson ,  Boguslaw Swedek ,  Manoocher Birang

    Inventor： Hiroji Hanawa ,  Nils Johansson ,  Boguslaw Swedek ,  Manoocher Birang

    IPC: B24B49/00

    CPC classification number: B24B37/013 ,  B24B37/205 ,  B24B49/02 ,  B24B49/105 ,  B24B49/12 ,  G01B7/105

    Abstract: A sensor for monitoring a conductive film in a substrate during chemical mechanical polishing generates an alternating magnetic field that impinges a substrate and induces eddy currents. The sensor can have a core, a first coil wound around a first portion of the core and a second coil wound around a second portion of the core. The sensor can be positioned on a side of the polishing surface opposite the substrate. The sensor can detect a phase difference between a drive signal and a measured signal.

    Abstract translation: 用于在化学机械抛光期间监测衬底中的导电膜的传感器产生撞击衬底并引起涡流的交变磁场。 传感器可以具有芯，围绕芯的第一部分缠绕的第一线圈和缠绕在芯的第二部分上的第二线圈。 传感器可以位于与衬底相对的抛光表面的一侧。 传感器可以检测到驱动信号和测量信号之间的相位差。

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