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    Polishing Assembly With A Window
    1.
    发明申请
    Polishing Assembly With A Window 有权
    抛光组装与窗口

    公开(公告)号：US20070021037A1

    公开(公告)日：2007-01-25

    申请号：US11532498

    申请日：2006-09-15

    Applicant: Manoocher Birang ,  Allan Gleason ,  William Guthrie

    Inventor： Manoocher Birang ,  Allan Gleason ,  William Guthrie

    IPC: B24B49/00

    CPC classification number: B24B37/205 ,  B24B37/013 ,  B24B47/12 ,  B24B49/04 ,  B24B49/12 ,  B24B51/00 ,  B24D18/00 ,  G01B11/06 ,  G01B11/0683

    Abstract: The polishing pad for a chemical mechanical polishing apparatus, and a method of making the same. The polishing pad has a covering layer with a polishing surface and a backing layer which is adjacent to the platen. A first opening in the covering layer with a first cross-sectional area and a second opening in the backing layer with a second, different cross-sectional area form an aperture through the polishing pad. A substantially transparent polyurethane plug is positioned in the aperture, and an adhesive material fixes the plug in the aperture.

    Abstract translation: 用于化学机械抛光装置的抛光垫及其制造方法。 抛光垫具有与抛光表面相邻的覆盖层和与压板相邻的背衬层。 具有第一横截面积的覆盖层中的第一开口和具有第二不同横截面积的背衬层中的第二开口形成穿过抛光垫的孔。 基本上透明的聚氨酯塞被定位在孔中，并且粘合剂材料将塞子固定在孔中。

    Method of fabricating a window in a polishing pad
    2.
    发明申请
    Method of fabricating a window in a polishing pad 有权
    在抛光垫中制造窗户的方法

    公开(公告)号：US20060014476A1

    公开(公告)日：2006-01-19

    申请号：US11225838

    申请日：2005-09-12

    Applicant: Manoocher Birang ,  Allan Gleason ,  William Guthrie

    Inventor： Manoocher Birang ,  Allan Gleason ,  William Guthrie

    IPC: B24B49/00

    CPC classification number: B24B37/205 ,  B24B37/013 ,  B24B47/12 ,  B24B49/04 ,  B24B49/12 ,  B24B51/00 ,  B24D18/00 ,  G01B11/06 ,  G01B11/0683

    Abstract: The polishing pad for a chemical mechanical polishing apparatus, and a method of making the same. The polishing pad has a covering layer with a polishing surface and a backing layer which is adjacent to the platen. A first opening in the covering layer with a first cross-sectional area and a second opening in the backing layer with a second, different cross-sectional area form an aperture through the polishing pad. A substantially transparent polyurethane plug is positioned in the aperture, and an adhesive material fixes the plug in the aperture.

    Abstract translation: 用于化学机械抛光装置的抛光垫及其制造方法。 抛光垫具有与抛光表面相邻的覆盖层和与压板相邻的背衬层。 具有第一横截面积的覆盖层中的第一开口和具有第二不同横截面积的背衬层中的第二开口形成穿过抛光垫的孔。 基本上透明的聚氨酯塞被定位在孔中，并且粘合剂材料将塞子固定在孔中。

    Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations
    3.
    发明授权
    Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations 有权
    用于化学机械抛光操作的原位终点检测的装置和方法

    公开(公告)号：US07775852B2

    公开(公告)日：2010-08-17

    申请号：US11099789

    申请日：2005-04-05

    Applicant: Manoocher Birang ,  Nils Johansson ,  Allan Gleason

    Inventor： Manoocher Birang ,  Nils Johansson ,  Allan Gleason

    IPC: B24B49/12

    CPC classification number: H01L22/12 ,  B24B37/013 ,  B24B37/205 ,  B24B47/12 ,  B24B49/04 ,  B24B49/12 ,  B24B51/00 ,  G01B11/0683

    Abstract: An apparatus and method of chemical mechanical polishing (CMP) of a wafer employing a device for determining, in-situ, during the CMP process, an endpoint where the process is to be terminated. This device includes a laser interferometer capable of generating a laser beam directed towards the wafer and detecting light reflected from the wafer, and a window disposed adjacent to a hole formed through a platen. The window provides a pathway for the laser beam during at least part of the time the wafer overlies the window.

    Abstract translation: 使用用于在CMP处理期间原地确定终止该过程的端点的装置的晶片的化学机械抛光（CMP）的装置和方法。 该装置包括能够产生朝向晶片的激光束并检测从晶片反射的光的激光干涉仪，以及邻近通过压板形成的孔布置的窗口。 该窗口在晶片覆盖窗口的至少部分时间内为激光束提供通路。

    Method for in-situ endpoint detection for chemical mechanical polishing operations
    7.
    发明授权
    Method for in-situ endpoint detection for chemical mechanical polishing operations 有权
    化学机械抛光操作的原位终点检测方法

    公开(公告)号：US06537133B1

    公开(公告)日：2003-03-25

    申请号：US09672549

    申请日：2000-09-28

    Applicant: Manoocher Birang ,  Nils Johansson ,  Allan Gleason

    Inventor： Manoocher Birang ,  Nils Johansson ,  Allan Gleason

    IPC: B24B4900

    CPC classification number: B24B47/12 ,  B24B37/013 ,  B24B37/205 ,  B24B49/04 ,  B24B49/12 ,  B24B51/00 ,  G01B11/0683

    Abstract: An apparatus and method of chemical mechanical polishing (CMP) of a wafer employing a device for determining, in-situ, during the CMP process, an endpoint where the process is to be terminated. This device includes a laser interferometer capable of generating a laser beam directed towards the wafer and detecting light reflected from the wafer, and a window disposed adjacent to a hole formed through a platen. The window provides a pathway for the laser beam during at least part of the time the wafer overlies the window.

    Abstract translation: 使用用于在CMP处理期间原地确定终止该过程的端点的装置的晶片的化学机械抛光（CMP）的装置和方法。 该装置包括能够产生朝向晶片的激光束并检测从晶片反射的光的激光干涉仪，以及邻近通过压板形成的孔布置的窗口。 该窗口在晶片覆盖窗口的至少部分时间内为激光束提供通路。

    APPARATUS AND METHOD FOR IN-SITU ENDPOINT DETECTION FOR SEMICONDUCTOR PROCESSING OPERATIONS
    8.
    发明申请
    APPARATUS AND METHOD FOR IN-SITU ENDPOINT DETECTION FOR SEMICONDUCTOR PROCESSING OPERATIONS 有权
    用于半导体处理操作的现场端点检测的装置和方法

    公开(公告)号：US20130130413A1

    公开(公告)日：2013-05-23

    申请号：US13745691

    申请日：2013-01-18

    Applicant: Manoocher Birang ,  Nils Johansson ,  Allan Gleason

    Inventor： Manoocher Birang ,  Nils Johansson ,  Allan Gleason

    IPC: H01L21/66

    CPC classification number: H01L22/12 ,  B24B37/013 ,  B24B37/205 ,  B24B47/12 ,  B24B49/04 ,  B24B49/12 ,  B24B51/00 ,  G01B11/0683

    Abstract: An endpoint detection method includes processing an outer surface of a substrate, directing an incident light beam through a window in an opaque metal body onto the surface being processed, receiving at a detector a reflected light beam from the substrate and generating a signal from the detector, and generating a signal based on the reflected light beam received at the detector, and detecting a processing endpoint. The signal is a time-varying cyclic signal that varies as the thickness of the layer varies over time, and detecting the processing endpoint includes detecting that a portion of a cycle of the cyclic signal has passed, the portion being less than a full cycle of the cyclic signal.

    Abstract translation: 端点检测方法包括处理衬底的外表面，将入射光束通过不透明金属体中的窗口引导到被处理的表面上，在检测器处接收来自衬底的反射光束，并从检测器产生信号 并且基于在检测器处接收的反射光产生信号，并且检测处理端点。 该信号是时变循环信号，其随着层的厚度随时间而变化，并且检测处理端点包括检测循环信号的周期的一部分已经过去，该部分小于全周期 循环信号。

    APPARATUS AND METHOD FOR IN-SITU ENDPOINT DETECTION FOR CHEMICAL MECHANICAL POLISHING OPERATIONS
    9.
    发明申请
    APPARATUS AND METHOD FOR IN-SITU ENDPOINT DETECTION FOR CHEMICAL MECHANICAL POLISHING OPERATIONS 失效
    用于化学机械抛光操作的现场端点检测的装置和方法

    公开(公告)号：US20100297917A1

    公开(公告)日：2010-11-25

    申请号：US12850569

    申请日：2010-08-04

    Applicant: Manoocher Birang ,  Nils Johansson ,  Allan Gleason

    Inventor： Manoocher Birang ,  Nils Johansson ,  Allan Gleason

    IPC: B24B49/04 ,  B24B49/12

    CPC classification number: H01L22/12 ,  B24B37/013 ,  B24B37/205 ,  B24B47/12 ,  B24B49/04 ,  B24B49/12 ,  B24B51/00 ,  G01B11/0683

    Abstract: An apparatus for chemical mechanical polishing (CMP) of a wafer has a rotatable platen to hold a polishing pad, a polishing head for holding the wafer against the polishing pad, an optical monitoring system and a position sensor. The platen has a hole therein, the optical monitoring system includes a light source to direct a light beam through the aperture toward the wafer from a side of the wafer contacting the polishing pad and a detector to receive reflections of the light beam from the wafer, and the position sensor senses when the hole is adjacent the wafer such that the light beam generated by the light source can pass through the hole and impinge on the wafer.

    Abstract translation: 晶片的化学机械抛光（CMP）的装置具有可旋转的压板以保持抛光垫，用于将晶片保持在抛光垫上的抛光头，光学监视系统和位置传感器。 压板在其中具有孔，光学监测系统包括光源，用于将光束通过孔径朝向晶片从晶片接触抛光垫的侧面和检测器接收来自晶片的光束的反射， 并且位置传感器感测孔何时邻近晶片，使得由光源产生的光束可以穿过孔并撞击晶片。

    Polishing pad with window and method of fabricating a window in a polishing pad
    10.
    发明授权
    Polishing pad with window and method of fabricating a window in a polishing pad 有权
    具有窗口的抛光垫和在抛光垫中制造窗口的方法

    公开(公告)号：US07118450B2

    公开(公告)日：2006-10-10

    申请号：US11225838

    申请日：2005-09-12

    Applicant: Manoocher Birang ,  Allan Gleason ,  William L. Guthrie

    Inventor： Manoocher Birang ,  Allan Gleason ,  William L. Guthrie

    IPC: B24B49/00 ,  B24B51/00

    CPC classification number: B24B37/205 ,  B24B37/013 ,  B24B47/12 ,  B24B49/04 ,  B24B49/12 ,  B24B51/00 ,  B24D18/00 ,  G01B11/06 ,  G01B11/0683

    Abstract: The polishing pad for a chemical mechanical polishing apparatus, and a method of making the same. The polishing pad has a covering layer with a polishing surface and a backing layer which is adjacent to the platen. A first opening in the covering layer with a first cross-sectional area and a second opening in the backing layer with a second, different cross-sectional area form an aperture through the polishing pad. A substantially transparent polyurethane plug is positioned in the aperture, and an adhesive material fixes the plug in the aperture.

    Abstract translation: 用于化学机械抛光装置的抛光垫及其制造方法。 抛光垫具有与抛光表面相邻的覆盖层和与压板相邻的背衬层。 具有第一横截面积的覆盖层中的第一开口和具有第二不同横截面积的背衬层中的第二开口形成穿过抛光垫的孔。 基本上透明的聚氨酯塞被定位在孔中，并且粘合剂材料将塞子固定在孔中。

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