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公开(公告)号：US10380728B2
公开(公告)日：2019-08-13
申请号：US15230339
申请日：2016-08-05
Applicant: KLA-Tencor Corporation
Inventor： Stilian Ivanov Pandev
Abstract: Methods and systems for combining information present in measured images of semiconductor wafers with additional measurements of particular structures within the measured images are presented herein. In one aspect, an image-based signal response metrology (SRM) model is trained based on measured images and corresponding reference measurements of particular structures within each image. The trained, image-based SRM model is then used to calculate values of one or more parameters of interest directly from measured image data collected from other wafers. In another aspect, a measurement signal synthesis model is trained based on measured images and corresponding measurement signals generated by measurements of particular structures within each image by a non-imaging measurement technique. Images collected from other wafers are transformed into synthetic measurement signals associated with the non-imaging measurement technique and a model-based measurement is employed to estimate values of parameters of interest based on the synthetic signals.
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公开(公告)号：US10352876B2
公开(公告)日：2019-07-16
申请号：US14704840
申请日：2015-05-05
Applicant: KLA—Tencor Corporation
Inventor： Andrei V. Shchegrov , Stilian Ivanov Pandev , Jonathan M. Madsen , Alexander Kuznetsov , Walter Dean Mieher
Abstract: Methods and systems for creating a measurement model based only on measured training data are presented. The trained measurement model is then used to calculate overlay values directly from measured scatterometry data. The measurement models receive scatterometry signals directly as input and provide overlay values as output. In some embodiments, overlay error is determined from measurements of design rule structures. In some other embodiments, overlay error is determined from measurements of specialized target structures. In a further aspect, the measurement model is trained and employed to measure additional parameters of interest, in addition to overlay, based on the same or different metrology targets. In some embodiments, measurement data from multiple targets, measurement data collected by multiple metrologies, or both, is used for model building, training, and measurement. In some embodiments, an optimization algorithm automates the measurement model building and training process.
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公开(公告)号：US10152654B2
公开(公告)日：2018-12-11
申请号：US14624485
申请日：2015-02-17
Applicant: KLA-Tencor Corporation
Inventor： Stilian Ivanov Pandev
Abstract: Methods and systems for creating an image-based measurement model based only on measured, image-based training data are presented. The trained, image-based measurement model is then used to calculate values of one or more parameters of interest directly from measured image data collected from other wafers. The image-based measurement models receive image data directly as input and provide values of parameters of interest as output. In some embodiments, the image-based measurement model enables the direct measurement of overlay error. In some embodiments, overlay error is determined from images of on-device structures. In some other embodiments, overlay error is determined from images of specialized target structures. In some embodiments, image data from multiple targets, image data collected by multiple metrologies, or both, is used for model building, training, and measurement. In some embodiments, an optimization algorithm automates the image-based measurement model building and training process.
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公开(公告)号：US20180347961A1
公开(公告)日：2018-12-06
申请号：US16100843
申请日：2018-08-10
Applicant: KLA-Tencor Corporation
Inventor： Jiyou Fu , Noam Sapiens , Kevin A. Peterlinz , Stilian Ivanov Pandev
IPC: G01B11/00 , G03F7/00 , G01B11/24 , G01N21/21 , G01N21/956
CPC classification number: G01B11/002 , G01B11/24 , G01B2210/56 , G01N21/956 , G01N2021/213 , G03F7/00
Abstract: A spectroscopic beam profile metrology system simultaneously detects measurement signals over a large wavelength range and a large range of angles of incidence (AOI). In one aspect, a multiple wavelength illumination beam is reshaped to a narrow line shaped beam of light before projection onto a specimen by a high numerical aperture objective. After interaction with the specimen, the collected light is passes through a wavelength dispersive element that projects the range of AOIs along one direction and wavelength components along another direction of a two-dimensional detector. Thus, the measurement signals detected at each pixel of the detector each represent a scatterometry signal for a particular AOI and a particular wavelength. In another aspect, a hyperspectral detector is employed to simultaneously detect measurement signals over a large wavelength range, range of AOIs, and range of azimuth angles.
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公开(公告)号：US10101676B2
公开(公告)日：2018-10-16
申请号：US15271179
申请日：2016-09-20
Applicant: KLA-Tencor Corporation
Inventor： Jiyou Fu , Noam Sapiens , Kevin A. Peterlinz , Stilian Ivanov Pandev
Abstract: A spectroscopic beam profile metrology system simultaneously detects measurement signals over a large wavelength range and a large range of angles of incidence (AOI). In one aspect, a multiple wavelength illumination beam is reshaped to a narrow line shaped beam of light that is projected onto an overlay metrology target such that the direction of the line shaped beam is aligned with the direction of extent of a grating structure of the overlay metrology target. Collected light is dispersed across a detector according to AOI in one direction and according to wavelength in another direction. The measured signal at each detector pixel is associated with a particular AOI and wavelength. The collected light includes first order diffracted light, zero order diffracted light, or a combination thereof. In some embodiments, first order diffracted light and zero order diffracted light are detected over separate areas of the detector.
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Patent Agency Ranking
公开(公告)号：US20180108578A1
公开(公告)日：2018-04-19
申请号：US15782542
申请日：2017-10-12
Applicant: KLA-Tencor Corporation
Inventor： Stilian Ivanov Pandev , Dzmitry Sanko , Andrei V. Shchegrov
CPC classification number: H01L22/12 , G01B11/0625 , G01B11/24 , G01B2210/56 , G01N21/255 , G01N21/9503 , G01N2021/213 , G03F7/705 , G03F7/70625 , H01L22/26
Abstract: Methods and systems for estimating values of parameters of interest based on repeated measurements of a wafer during a process interval are presented herein. In one aspect, one or more optical metrology subsystems are integrated with a process tool, such as an etch tool or a deposition tool. Values of one or more parameters of interest measured while the wafer is being processed are used to control the process itself. The measurements are performed quickly and with sufficient accuracy to enable yield improvement of a semiconductor fabrication process flow. In one aspect, values of one or more parameters of interest are estimated based on spectral measurements of wafers under process using a trained signal response metrology (SRM) measurement model. In another aspect, a trained signal decontamination model is employed to generate decontaminated optical spectra from measured optical spectra while the wafer is being processed.
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公开(公告)号：US20180051984A1
公开(公告)日：2018-02-22
申请号：US15784153
申请日：2017-10-15
Applicant: KLA-Tencor Corporation
Inventor： Andrei V. Shchegrov , Shankar Krishnan , Kevin Peterlinz , Thaddeus Gerard Dziura , Noam Sapiens , Stilian Ivanov Pandev
CPC classification number: G01B11/272 , G01B2210/56 , G03F7/0002 , G03F7/70141 , G03F7/70625 , H01L22/12 , H01L22/30
Abstract: Methods and systems for evaluating the performance of multiple patterning processes are presented. Patterned structures are measured and one or more parameter values characterizing geometric errors induced by the multiple patterning process are determined. In some examples, a single patterned target and a multiple patterned target are measured, the collected data fit to a combined measurement model, and the value of a structural parameter indicative of a geometric error induced by the multiple patterning process is determined based on the fit. In some other examples, light having a diffraction order different from zero is collected and analyzed to determine the value of a structural parameter that is indicative of a geometric error induced by a multiple patterning process. In some embodiments, a single diffraction order different from zero is collected. In some examples, a metrology target is designed to enhance light diffracted at an order different from zero.
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公开(公告)号：US20170356853A1
公开(公告)日：2017-12-14
申请号：US15671661
申请日：2017-08-08
Applicant: KLA-Tencor Corporation
Inventor： Noam Sapiens , Andrei V. Shchegrov , Stilian Ivanov Pandev
IPC: G01N21/93 , G01N21/956 , G01N21/95 , G01N21/47
CPC classification number: G01N21/93 , G01B2210/56 , G01N21/4788 , G01N21/9501 , G01N21/95607 , G01N2201/06113 , G01N2201/062 , G01N2201/10 , G01N2201/1296
Abstract: In one embodiment, apparatus and methods for determining a parameter of a target are disclosed. A target having an imaging structure and a scatterometry structure is provided. An image of the imaging structure is obtained with an imaging channel of a metrology tool. A scatterometry signal is also obtained from the scatterometry structure with a scatterometry channel of the metrology tool. At least one parameter, such as overlay error, of the target is determined based on both the image and the scatterometry signal.
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公开(公告)号：US20170082932A1
公开(公告)日：2017-03-23
申请号：US15271179
申请日：2016-09-20
Applicant: KLA-Tencor Corporation
Inventor： Jiyou Fu , Noam Sapiens , Kevin A. Peterlinz , Stilian Ivanov Pandev
IPC: G03F9/00
CPC classification number: G03F9/7065 , G03F7/70633 , G03F9/7046
Abstract: A spectroscopic beam profile metrology system simultaneously detects measurement signals over a large wavelength range and a large range of angles of incidence (AOI). In one aspect, a multiple wavelength illumination beam is reshaped to a narrow line shaped beam of light that is projected onto an overlay metrology target such that the direction of the line shaped beam is aligned with the direction of extent of a grating structure of the overlay metrology target. Collected light is dispersed across a detector according to AOI in one direction and according to wavelength in another direction. The measured signal at each detector pixel is associated with a particular AOI and wavelength. The collected light includes first order diffracted light, zero order diffracted light, or a combination thereof. In some embodiments, first order diffracted light and zero order diffracted light are detected over separate areas of the detector.
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70.发明申请SYSTEM, METHOD AND COMPUTER PROGRAM PRODUCT FOR COMBINING RAW DATA FROM MULTIPLE METROLOGY TOOLS 审中-公开用于从多个计量工具组合原始数据的系统，方法和计算机程序产品公开(公告)号：US20160141193A1
公开(公告)日：2016-05-19
申请号：US14942738
申请日：2015-11-16
Applicant: KLA-Tencor Corporation
Inventor： Stilian Ivanov Pandev , Thaddeus Gerard Dziura , Andrei V. Shchegrov
CPC classification number: G06N99/005
Abstract: A system, method and computer program product are provided for combining raw data from multiple metrology tools. Reference values are obtained for at least one parameter of a training component. Signals are collected for the at least one parameter of the training component, utilizing a first metrology tool and a different second metrology tool. Further, at least a portion the signals are transformed into a set of signals, and for each of the at least one parameter of the training component, a corresponding relationship between the set of signals and the reference values is determined and a corresponding training model is created therefrom. Signals from a target component are collected utilizing at least the first metrology tool and the second metrology tool, and each created training model is applied to the signals collected from the target component to measure parametric values for the target component.
Abstract translation: 提供了一种用于组合来自多个计量工具的原始数据的系统，方法和计算机程序产品。 针对训练部件的至少一个参数获得参考值。 利用第一计量工具和不同的第二计量工具，为训练组件的至少一个参数收集信号。 此外，信号的至少一部分被变换成一组信号，并且对于训练分量的至少一个参数中的每一个，确定信号组和参考值之间的对应关系，并且相应的训练模型是 由此创建。 使用至少第一计量工具和第二计量工具收集来自目标组件的信号，并且将每个创建的训练模型应用于从目标分量收集的信号以测量目标分量的参数值。
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