公开(公告)号：US20180061691A1

公开(公告)日：2018-03-01

申请号：US15688751

申请日：2017-08-28

Applicant: KLA-Tencor Corporation

Inventor： Prateek Jain ,  Daniel Wack ,  Kevin A. Peterlinz ,  Andrei V. Shchegrov ,  Shankar Krishnan

IPC: H01L21/67 ,  H01L21/66

CPC classification number: H01L21/67253 ,  H01L22/10 ,  H01L22/12

Abstract: Methods and systems for performing in-situ, selective spectral reflectometry (SSR) measurements of semiconductor structures disposed on a wafer are presented herein. Illumination light reflected from a wafer surface is spatially imaged. Signals from selected regions of the image are collected and spectrally analyzed, while other portions of the image are discarded. In some embodiments, a SSR includes a dynamic mirror array (DMA) disposed in the optical path at or near a field plane conjugate to the surface of the semiconductor wafer under measurement. The DMA selectively blocks the undesired portion of wafer image. In other embodiments, a SSR includes a hyperspectral imaging system including a plurality of spectrometers each configured to collect light from a spatially distinct area of a field image conjugate to the wafer surface. Selected spectral signals associated with desired regions of the wafer image are selected for analysis.

公开(公告)号：US10690602B2

公开(公告)日：2020-06-23

申请号：US15896978

申请日：2018-02-14

Applicant: KLA-Tencor Corporation

Inventor： Noam Sapiens ,  Shankar Krishnan ,  David Y. Wang ,  Alexander Buettner ,  Kerstin Purrucker ,  Kevin A. Peterlinz

IPC: G01N21/95 ,  G01B11/06 ,  G01J3/42 ,  G01N21/956 ,  H01L21/66 ,  G01J3/02 ,  G01J3/36 ,  G01J3/10 ,  G01J3/28 ,  G01N21/84 ,  G01N21/21

Abstract: Methods and systems for performing spectroscopic measurements of semiconductor structures including ultraviolet, visible, and infrared wavelengths greater than two micrometers are presented herein. A spectroscopic measurement system includes a combined illumination source including a first illumination source that generates ultraviolet, visible, and near infrared wavelengths (wavelengths less than two micrometers) and a second illumination source that generates mid infrared and long infrared wavelengths (wavelengths of two micrometers and greater). Furthermore, the spectroscopic measurement system includes one or more measurement channels spanning the range of illumination wavelengths employed to perform measurements of semiconductor structures. In some embodiments, the one or more measurement channels simultaneously measure the sample throughout the wavelength range. In some other embodiments, the one or more measurement channels sequentially measure the sample throughout the wavelength range.

公开(公告)号：US10648796B2

公开(公告)日：2020-05-12

申请号：US15885504

申请日：2018-01-31

Applicant: KLA-Tencor Corporation

Inventor： Noam Sapiens ,  Kevin A. Peterlinz ,  Alexander Buettner ,  Kerstin Purrucker ,  Andrei V. Shchegrov

IPC: G01B11/24 ,  G03F7/20 ,  G01N21/21 ,  G01N21/956

Abstract: Methods and systems are presented to reduce the illumination spot size projected onto a measurement target and associated spillover onto area surrounding a measurement target. In one aspect, a spatial light modulator (SLM) is located in the illumination path between the illumination light source and the measurement sample. The SLM is configured to modulate amplitude, phase, or both, across the path of the illumination light to reduce wavefront errors. In some embodiments, the desired state of the SLM is based on wavefront measurements performed in an optical path of the metrology system. In another aspect, an illumination aperture having an image plane tilted at an oblique angle with respect to a beam of illumination light is employed to overcome defocusing effects in metrology systems that employ oblique illumination of the measurement sample. In some embodiments, the illumination aperture, objective lens, and specimen are aligned to satisfy the Scheimpflug condition.

公开(公告)号：US20180180406A1

公开(公告)日：2018-06-28

申请号：US15885504

申请日：2018-01-31

Applicant: KLA-Tencor Corporation

Inventor： Noam Sapiens ,  Kevin A. Peterlinz ,  Alexander Buettner ,  Kerstin Purrucker ,  Andrei V. Shchegrov

IPC: G01B11/24 ,  G03F7/20 ,  G01N21/956 ,  G01N21/21

CPC classification number: G01B11/24 ,  G01B2210/56 ,  G01N21/956 ,  G01N2021/213 ,  G03F7/70625

Abstract: Methods and systems are presented to reduce the illumination spot size projected onto a measurement target and associated spillover onto area surrounding a measurement target. In one aspect, a spatial light modulator (SLM) is located in the illumination path between the illumination light source and the measurement sample. The SLM is configured to modulate amplitude, phase, or both, across the path of the illumination light to reduce wavefront errors. In some embodiments, the desired state of the SLM is based on wavefront measurements performed in an optical path of the metrology system. In another aspect, an illumination aperture having an image plane tilted at an oblique angle with respect to a beam of illumination light is employed to overcome defocusing effects in metrology systems that employ oblique illumination of the measurement sample. In some embodiments, the illumination aperture, objective lens, and specimen are aligned to satisfy the Scheimpflug condition.

公开(公告)号：US10438825B2

公开(公告)日：2019-10-08

申请号：US15688751

申请日：2017-08-28

Applicant: KLA-Tencor Corporation

Inventor： Prateek Jain ,  Daniel Wack ,  Kevin A. Peterlinz ,  Andrei V. Shchegrov ,  Shankar Krishnan

IPC: H01L21/67 ,  H01L21/66

Abstract: Methods and systems for performing in-situ, selective spectral reflectometry (SSR) measurements of semiconductor structures disposed on a wafer are presented herein. Illumination light reflected from a wafer surface is spatially imaged. Signals from selected regions of the image are collected and spectrally analyzed, while other portions of the image are discarded. In some embodiments, a SSR includes a dynamic mirror array (DMA) disposed in the optical path at or near a field plane conjugate to the surface of the semiconductor wafer under measurement. The DMA selectively blocks the undesired portion of wafer image. In other embodiments, a SSR includes a hyperspectral imaging system including a plurality of spectrometers each configured to collect light from a spatially distinct area of a field image conjugate to the wafer surface. Selected spectral signals associated with desired regions of the wafer image are selected for analysis.

公开(公告)号：US10072921B2

公开(公告)日：2018-09-11

申请号：US14960121

申请日：2015-12-04

Applicant: KLA-Tencor Corporation

Inventor： Jiyou Fu ,  Noam Sapiens ,  Kevin A. Peterlinz ,  Stilian Ivanov Pandev

IPC: G01B11/24 ,  G01B11/00 ,  G03F7/00 ,  G01N21/956 ,  G01N21/21

CPC classification number: G01B11/002 ,  G01B11/24 ,  G01B2210/56 ,  G01N21/956 ,  G01N2021/213 ,  G03F7/00

Abstract: A spectroscopic beam profile metrology system simultaneously detects measurement signals over a large wavelength range and a large range of angles of incidence (AOI). In one aspect, a multiple wavelength illumination beam is reshaped to a narrow line shaped beam of light before projection onto a specimen by a high numerical aperture objective. After interaction with the specimen, the collected light is passes through a wavelength dispersive element that projects the range of AOIs along one direction and wavelength components along another direction of a two-dimensional detector. Thus, the measurement signals detected at each pixel of the detector each represent a scatterometry signal for a particular AOI and a particular wavelength. In another aspect, a hyperspectral detector is employed to simultaneously detect measurement signals over a large wavelength range, range of AOIs, and range of azimuth angles.

公开(公告)号：US20160161245A1

公开(公告)日：2016-06-09

申请号：US14960121

申请日：2015-12-04

Applicant: KLA-Tencor Corporation

Inventor： Jiyou Fu ,  Noam Sapiens ,  Kevin A. Peterlinz ,  Stilian Ivanov Pandev

IPC: G01B11/00 ,  G03F7/00

CPC classification number: G01B11/002 ,  G01B11/24 ,  G01B2210/56 ,  G01N21/956 ,  G01N2021/213 ,  G03F7/00

Abstract: A spectroscopic beam profile metrology system simultaneously detects measurement signals over a large wavelength range and a large range of angles of incidence (AOI). In one aspect, a multiple wavelength illumination beam is reshaped to a narrow line shaped beam of light before projection onto a specimen by a high numerical aperture objective. After interaction with the specimen, the collected light is passes through a wavelength dispersive element that projects the range of AOIs along one direction and wavelength components along another direction of a two-dimensional detector. Thus, the measurement signals detected at each pixel of the detector each represent a scatterometry signal for a particular AOI and a particular wavelength. In another aspect, a hyperspectral detector is employed to simultaneously detect measurement signals over a large wavelength range, range of AOIs, and range of azimuth angles.

Abstract translation: 分光光束分布测量系统同时检测大波长范围和大范围入射角（AOI）的测量信号。 在一个方面，多波长照明光束在通过高数值孔径物镜投影到样本上之前重新成形为窄线形的光束。 在与样品相互作用后，所收集的光通过沿着一个方向投影AOI范围的波长色散元件，并沿着二维检测器的另一方向波长成分。 因此，在检测器的每个像素处检测的测量信号各自表示用于特定AOI和特定波长的散射测量信号。 另一方面，采用高光谱检测器来同时检测大波长范围，AOI范围和方位角范围内的测量信号。

公开(公告)号：US10234271B2

公开(公告)日：2019-03-19

申请号：US16100843

申请日：2018-08-10

Applicant: KLA-Tencor Corporation

Inventor： Jiyou Fu ,  Noam Sapiens ,  Kevin A. Peterlinz ,  Stilian Ivanov Pandev

IPC: G01B11/00 ,  G01B11/24 ,  G03F7/00 ,  G01N21/21 ,  G01N21/956

Abstract: A spectroscopic beam profile metrology system simultaneously detects measurement signals over a large wavelength range and a large range of angles of incidence (AOI). In one aspect, a multiple wavelength illumination beam is reshaped to a narrow line shaped beam of light before projection onto a specimen by a high numerical aperture objective. After interaction with the specimen, the collected light is passes through a wavelength dispersive element that projects the range of AOIs along one direction and wavelength components along another direction of a two-dimensional detector. Thus, the measurement signals detected at each pixel of the detector each represent a scatterometry signal for a particular AOI and a particular wavelength. In another aspect, a hyperspectral detector is employed to simultaneously detect measurement signals over a large wavelength range, range of AOIs, and range of azimuth angles.

公开(公告)号：US20180238814A1

公开(公告)日：2018-08-23

申请号：US15896978

申请日：2018-02-14

Applicant: KLA-Tencor Corporation

Inventor： Noam Sapiens ,  Shankar Krishnan ,  David Y. Wang ,  Alexander Buettner ,  Kerstin Purrucker ,  Kevin A. Peterlinz

IPC: G01N21/95 ,  G01B11/06 ,  G01J3/42 ,  G01N21/21 ,  G01N21/956 ,  H01L21/66

Abstract: Methods and systems for performing spectroscopic measurements of semiconductor structures including ultraviolet, visible, and infrared wavelengths greater than two micrometers are presented herein. A spectroscopic measurement system includes a combined illumination source including a first illumination source that generates ultraviolet, visible, and near infrared wavelengths (wavelengths less than two micrometers) and a second illumination source that generates mid infrared and long infrared wavelengths (wavelengths of two micrometers and greater). Furthermore, the spectroscopic measurement system includes one or more measurement channels spanning the range of illumination wavelengths employed to perform measurements of semiconductor structures. In some embodiments, the one or more measurement channels simultaneously measure the sample throughout the wavelength range. In some other embodiments, the one or more measurement channels sequentially measure the sample throughout the wavelength range.

公开(公告)号：US09535018B2

公开(公告)日：2017-01-03

申请号：US14074689

申请日：2013-11-07

Applicant: KLA-Tencor Corporation

Inventor： Kevin A. Peterlinz ,  Andrei V. Shchegrov ,  Michael S. Bakeman ,  Thaddeus Gerard Dziura

IPC: G01N23/203 ,  G01B15/00 ,  G01N23/22 ,  H01L21/66

CPC classification number: G01N23/203 ,  G01B15/00 ,  G01B2210/56 ,  G01N23/2206 ,  H01L22/12 ,  H01L22/20

Abstract: Structural parameters of a specimen are determined by fitting models of the response of the specimen to measurements collected by different measurement techniques in a combined analysis. X-ray measurement data of a specimen is analyzed to determine at least one specimen parameter value that is treated as a constant in a combined analysis of both optical measurements and x-ray measurements of the specimen. For example, a particular structural property or a particular material property, such as an elemental composition of the specimen, is determined based on x-ray measurement data. The parameter(s) determined from the x-ray measurement data are treated as constants in a subsequent, combined analysis of both optical measurements and x-ray measurements of the specimen. In a further aspect, the structure of the response models is altered based on the quality of the fit between the models and the corresponding measurement data.

Abstract translation: 样本的结构参数是通过将样本的响应拟合到通过不同测量技术在综合分析中收集的测量结果来确定的。 分析样本的X射线测量数据，以确定在样本的光学测量和x射线测量的组合分析中被视为常数的至少一个样本参数值。 例如，基于x射线测量数据确定特定结构性质或特定材料性质，例如样品的元素组成。 从x射线测量数据确定的参数在随后的样本的光学测量和x射线测量的组合分析中被视为常数。 在另一方面，响应模型的结构基于模型与相应测量数据之间的拟合质量而改变。